JP5461094B2 - 光電変換装置、及び当該光電変換装置を具備する電子機器 - Google Patents
光電変換装置、及び当該光電変換装置を具備する電子機器 Download PDFInfo
- Publication number
- JP5461094B2 JP5461094B2 JP2009174907A JP2009174907A JP5461094B2 JP 5461094 B2 JP5461094 B2 JP 5461094B2 JP 2009174907 A JP2009174907 A JP 2009174907A JP 2009174907 A JP2009174907 A JP 2009174907A JP 5461094 B2 JP5461094 B2 JP 5461094B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- photoelectric conversion
- signal
- comparator
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 85
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 123
- 229910052581 Si3N4 Inorganic materials 0.000 description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 18
- 238000010586 diagram Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- 239000011347 resin Substances 0.000 description 14
- 229920005989 resin Polymers 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000010410 layer Substances 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000003071 parasitic effect Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 238000001678 elastic recoil detection analysis Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- -1 etc.) Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000005007 epoxy-phenolic resin Substances 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000005499 laser crystallization Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K4/00—Generating pulses having essentially a finite slope or stepped portions
- H03K4/06—Generating pulses having essentially a finite slope or stepped portions having triangular shape
Landscapes
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009174907A JP5461094B2 (ja) | 2008-08-08 | 2009-07-28 | 光電変換装置、及び当該光電変換装置を具備する電子機器 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008204965 | 2008-08-08 | ||
| JP2008204965 | 2008-08-08 | ||
| JP2009174907A JP5461094B2 (ja) | 2008-08-08 | 2009-07-28 | 光電変換装置、及び当該光電変換装置を具備する電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010062537A JP2010062537A (ja) | 2010-03-18 |
| JP2010062537A5 JP2010062537A5 (enExample) | 2012-07-05 |
| JP5461094B2 true JP5461094B2 (ja) | 2014-04-02 |
Family
ID=41653440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009174907A Expired - Fee Related JP5461094B2 (ja) | 2008-08-08 | 2009-07-28 | 光電変換装置、及び当該光電変換装置を具備する電子機器 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US8153954B2 (enExample) |
| JP (1) | JP5461094B2 (enExample) |
| WO (1) | WO2010016449A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2011086829A1 (en) * | 2010-01-15 | 2011-07-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP5186546B2 (ja) * | 2010-11-12 | 2013-04-17 | アンリツ株式会社 | 光電変換回路 |
| US11005455B2 (en) | 2019-04-04 | 2021-05-11 | Silanna Asia Pte Ltd | Generating voltage pulse with controllable width |
Family Cites Families (50)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPS6031249B2 (ja) * | 1977-07-29 | 1985-07-20 | 株式会社日立製作所 | 測光増幅回路 |
| JPS5652730A (en) * | 1979-10-05 | 1981-05-12 | Olympus Optical Co Ltd | Camera |
| JPS5754823A (en) * | 1980-09-20 | 1982-04-01 | Ricoh Elemex Corp | Analogue-digital conversion circuit for illumination photometer |
| JPS5817786A (ja) * | 1981-07-23 | 1983-02-02 | Canon Inc | 撮像装置 |
| JPS5895423A (ja) * | 1981-12-02 | 1983-06-07 | Toshiba Corp | アナログ−ディジタル変換回路 |
| US5268309A (en) * | 1984-09-01 | 1993-12-07 | Canon Kabushiki Kaisha | Method for manufacturing a photosensor |
| US4673807A (en) * | 1984-10-12 | 1987-06-16 | Dai Nippon Insatso Kabushiki Kaisha | Automatic range control method for an optical density/dot percentage measuring device |
| US4739459A (en) * | 1984-10-12 | 1988-04-19 | Dai Nippon Insatsu Kabushiki Kaisha | Automatic range control method for an optical density/dot percentage measuring device |
| JPS60223226A (ja) * | 1985-03-18 | 1985-11-07 | Hitachi Ltd | カメラ |
| JPS61228319A (ja) * | 1985-04-03 | 1986-10-11 | Canon Inc | 光電流増幅回路 |
| JPS634225A (ja) * | 1986-06-24 | 1988-01-09 | Asahi Optical Co Ltd | 電子シャッターカメラの測光アンプ |
| JPS63144331A (ja) | 1986-12-09 | 1988-06-16 | Minolta Camera Co Ltd | スチルカメラシステム |
| JPS6415973U (enExample) * | 1987-07-11 | 1989-01-26 | ||
| JP2560747B2 (ja) * | 1987-09-22 | 1996-12-04 | ミノルタ株式会社 | 光電変換装置 |
| US5373152A (en) * | 1992-01-31 | 1994-12-13 | Nec Corporation | Resonance-type optical receiver circuit having a maximum amplifier input controlled by using an amplifier feedback and its method of receiving |
| US5214274A (en) | 1992-07-24 | 1993-05-25 | President And Fellows Of Harvard College | Image sensor array with threshold voltage detectors and charged storage capacitors |
| JPH0695218A (ja) * | 1992-09-11 | 1994-04-08 | Nikon Corp | 電子閃光装置の調光制御回路 |
| JPH06313840A (ja) | 1993-04-30 | 1994-11-08 | Fuji Film Micro Device Kk | 測光装置と測光方法 |
| EP0793380A2 (en) | 1996-02-29 | 1997-09-03 | Kabushiki Kaisha Toshiba | A noise cancelling circuit for pixel signals and an image pickup device using the noise cancelling circuit |
| JPH10200342A (ja) * | 1997-01-07 | 1998-07-31 | Nec Corp | バイアス電圧供給回路 |
| US20010048140A1 (en) | 1997-04-10 | 2001-12-06 | Inao Toyoda | Photo sensing integrated circuit device and related circuit adjustment |
| JP3855351B2 (ja) * | 1997-04-10 | 2006-12-06 | 株式会社デンソー | 光センサ |
| JP3503410B2 (ja) * | 1997-04-10 | 2004-03-08 | 株式会社デンソー | 光センサの調整方法および光センサの調整装置 |
| JP2970844B2 (ja) * | 1997-06-04 | 1999-11-02 | 日本電気株式会社 | 光受信器及びそれを用いた光ネットワークシステム |
| US6734907B1 (en) * | 1998-04-30 | 2004-05-11 | Minolta Co., Ltd. | Solid-state image pickup device with integration and amplification |
| JPH11340745A (ja) * | 1998-05-28 | 1999-12-10 | Nec Corp | トランスインピーダンス型増幅回路 |
| US6300615B1 (en) * | 1998-08-31 | 2001-10-09 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
| JP3581031B2 (ja) * | 1998-11-27 | 2004-10-27 | オリンパス株式会社 | 光検出装置 |
| JP3582441B2 (ja) * | 2000-01-17 | 2004-10-27 | 株式会社村田製作所 | 光変調器および光変調方法 |
| CA2311434C (en) * | 2000-06-13 | 2004-10-19 | Ibm Canada Limited-Ibm Canada Limitee | Differential photoelectric receiver circuit |
| JP2002286504A (ja) | 2001-03-27 | 2002-10-03 | Citizen Watch Co Ltd | 光センサ回路およびこれを用いた光学式変位測長器 |
| JP2002311138A (ja) * | 2001-04-06 | 2002-10-23 | Mitsubishi Electric Corp | 車両用測距装置 |
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| JP2005072924A (ja) * | 2003-08-25 | 2005-03-17 | Nec Kansai Ltd | 光電流・電圧変換回路 |
| JP4138708B2 (ja) | 2004-07-12 | 2008-08-27 | 浜松ホトニクス株式会社 | 光検出装置 |
| JP4192880B2 (ja) | 2004-10-12 | 2008-12-10 | セイコーエプソン株式会社 | 電気光学装置および電子機器 |
| JP4599985B2 (ja) * | 2004-10-21 | 2010-12-15 | セイコーエプソン株式会社 | 光検出回路、電気光学装置、および電子機器 |
| JP2006133135A (ja) * | 2004-11-08 | 2006-05-25 | Rohm Co Ltd | 電流検出回路およびそれを用いた信号検出装置 |
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| US8514165B2 (en) | 2006-12-28 | 2013-08-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| WO2008123119A1 (en) * | 2007-03-26 | 2008-10-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and electronic device provided with the photoelectric conversion device |
| JP2008263546A (ja) * | 2007-04-13 | 2008-10-30 | Konica Minolta Holdings Inc | 固体撮像装置、固体撮像装置の駆動方法、及びこれを用いた撮像システム |
| JP2009250842A (ja) * | 2008-04-08 | 2009-10-29 | Sharp Corp | 光量デジタル変換回路、ic、および電子機器 |
| US8124922B2 (en) | 2008-05-21 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device including photoelectric conversion element and amplifier circuit having a thin film transistor |
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-
2009
- 2009-07-28 WO PCT/JP2009/063717 patent/WO2010016449A1/en not_active Ceased
- 2009-07-28 JP JP2009174907A patent/JP5461094B2/ja not_active Expired - Fee Related
- 2009-07-30 US US12/512,280 patent/US8153954B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2010062537A (ja) | 2010-03-18 |
| US20100035661A1 (en) | 2010-02-11 |
| US8153954B2 (en) | 2012-04-10 |
| WO2010016449A1 (en) | 2010-02-11 |
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