JP5441414B2 - トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置 - Google Patents

トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置 Download PDF

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JP5441414B2
JP5441414B2 JP2008545675A JP2008545675A JP5441414B2 JP 5441414 B2 JP5441414 B2 JP 5441414B2 JP 2008545675 A JP2008545675 A JP 2008545675A JP 2008545675 A JP2008545675 A JP 2008545675A JP 5441414 B2 JP5441414 B2 JP 5441414B2
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quantum
inorganic
quantum dot
barrier
tunnel barrier
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JP2009520357A5 (enExample
JP2009520357A (ja
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フォレスト，スティーブン，アール．
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Princeton University
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Princeton University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP2008545675A 2005-12-16 2006-12-07 トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置 Expired - Fee Related JP5441414B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/304,713 2005-12-16
US11/304,713 US20070137693A1 (en) 2005-12-16 2005-12-16 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix
PCT/US2006/046910 WO2007120229A2 (en) 2005-12-16 2006-12-07 Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in inorganic matrix

Publications (3)

Publication Number Publication Date
JP2009520357A JP2009520357A (ja) 2009-05-21
JP2009520357A5 JP2009520357A5 (enExample) 2011-04-14
JP5441414B2 true JP5441414B2 (ja) 2014-03-12

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JP2008545675A Expired - Fee Related JP5441414B2 (ja) 2005-12-16 2006-12-07 トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置

Country Status (8)

Country Link
US (1) US20070137693A1 (enExample)
EP (1) EP1974393A2 (enExample)
JP (1) JP5441414B2 (enExample)
KR (1) KR101335193B1 (enExample)
CN (1) CN101375407B (enExample)
AR (1) AR057251A1 (enExample)
TW (1) TW200742097A (enExample)
WO (1) WO2007120229A2 (enExample)

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WO2008099473A1 (ja) * 2007-02-14 2008-08-21 Toyo Tire & Rubber Co., Ltd. タイヤ構成部材の孔あけ装置
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DE102007043215A1 (de) * 2007-09-11 2009-03-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Anordnung mit optisch aktiver Glaskeramik
CN102308393A (zh) * 2007-12-13 2012-01-04 泰克尼昂研究开发基金有限公司 包含第ⅳ-ⅵ族半导体核-壳纳米晶的光伏电池
ITRM20070652A1 (it) * 2007-12-17 2009-06-18 Genefinity S R L Metodo per la realizzazione di un materiale fotovoltaico
US9295519B2 (en) 2008-03-11 2016-03-29 Shaser, Inc Selectively operating light-based dermatologic treatment devices in strobe or pulse modes
WO2009142677A2 (en) * 2008-03-24 2009-11-26 The Board Of Trustees Of The Leland Stanford Junior University Quantum dot solar cell with quantum dot bandgap gradients
SE533090C2 (sv) * 2008-07-09 2010-06-22 Qunano Ab Nanostrukturerad ljusdiod
JP4459286B2 (ja) * 2008-08-08 2010-04-28 防衛省技術研究本部長 赤外線検知器
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
JP2010067801A (ja) * 2008-09-11 2010-03-25 Seiko Epson Corp 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP4673398B2 (ja) * 2008-10-22 2011-04-20 防衛省技術研究本部長 量子ドット型赤外線検知素子
JP5423952B2 (ja) * 2009-03-04 2014-02-19 セイコーエプソン株式会社 光電変換装置および電子機器
JP5229122B2 (ja) * 2009-06-11 2013-07-03 トヨタ自動車株式会社 光電変換素子
US20120222737A1 (en) * 2009-07-03 2012-09-06 Toyota Jidosha Kabushiki Kaisha Hot carrier energy conversion structure and method of fabricating the same
CN102473746B (zh) 2009-07-23 2015-10-21 丰田自动车株式会社 光电转换元件
KR20110023164A (ko) * 2009-08-28 2011-03-08 삼성전자주식회사 광전자 소자
JP2011100915A (ja) * 2009-11-09 2011-05-19 Toyota Motor Corp 光電変換素子
JP2011176225A (ja) * 2010-02-25 2011-09-08 Seiko Epson Corp 光学変換装置及び同装置を含む電子機器
KR101605765B1 (ko) * 2010-10-07 2016-03-24 구엘라 테크놀로지 가부시키가이샤 이차 전지
WO2012046326A1 (ja) * 2010-10-07 2012-04-12 グエラテクノロジー株式会社 太陽電池
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5555602B2 (ja) * 2010-10-25 2014-07-23 シャープ株式会社 太陽電池
ES2369300B2 (es) * 2011-06-21 2012-09-13 Universidad Politécnica de Madrid Célula solar de banda intermedia con puntos cuánticos no tensionados.
US20130092221A1 (en) * 2011-10-14 2013-04-18 Universidad Politecnica De Madrid Intermediate band solar cell having solution-processed colloidal quantum dots and metal nanoparticles
EP2787546B1 (en) * 2011-10-30 2018-05-02 Kabushiki Kaisha Nihon Micronics Repeatedly chargeable and dischargeable quantum battery
JP5999887B2 (ja) * 2011-11-29 2016-09-28 シャープ株式会社 多接合型太陽電池
JP6115938B2 (ja) * 2012-02-28 2017-04-19 国立大学法人電気通信大学 量子ドットの形成方法および太陽電池
CN102593206A (zh) * 2012-03-05 2012-07-18 天津理工大学 一种耗尽型体异质结量子点太阳能电池及其制备方法
US20150263203A1 (en) * 2012-10-26 2015-09-17 Research Triangle Institute Intermediate band semiconductors, heterojunctions, and optoelectronic devices utilizing solution processed quantum dots, and related methods
KR102012228B1 (ko) * 2012-12-27 2019-08-21 에스케이이노베이션 주식회사 양자점 기반 태양전지 및 이의 제조방법
JP6206834B2 (ja) * 2013-01-22 2017-10-04 国立研究開発法人情報通信研究機構 量子ドット型高速フォトダイオード
JP5880629B2 (ja) * 2014-06-24 2016-03-09 セイコーエプソン株式会社 光電変換装置、電子機器、光電変換装置の製造方法および電子機器の製造方法
JP2015005766A (ja) * 2014-08-20 2015-01-08 セイコーエプソン株式会社 光学変換装置及び同装置を含む電子機器
US20180254363A1 (en) * 2015-08-31 2018-09-06 The Board Of Regents Of The University Of Oklahoma Semiconductor devices having matrix-embedded nano-structured materials
KR102446410B1 (ko) * 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
JP6123925B2 (ja) * 2016-02-03 2017-05-10 セイコーエプソン株式会社 光電変換装置
JP6965764B2 (ja) * 2018-01-18 2021-11-10 富士通株式会社 光検出器及びその製造方法、撮像装置

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Also Published As

Publication number Publication date
KR101335193B1 (ko) 2013-11-29
CN101375407A (zh) 2009-02-25
CN101375407B (zh) 2010-08-25
WO2007120229A3 (en) 2008-03-13
US20070137693A1 (en) 2007-06-21
KR20080085166A (ko) 2008-09-23
AR057251A1 (es) 2007-11-21
JP2009520357A (ja) 2009-05-21
EP1974393A2 (en) 2008-10-01
TW200742097A (en) 2007-11-01
WO2007120229A2 (en) 2007-10-25

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