JP5436906B2 - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
- B23K26/359—Working by laser beam, e.g. welding, cutting or boring for surface treatment by providing a line or line pattern, e.g. a dotted break initiation line
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
Description
はじめに、図1を参照しながら、後述する本発明の各実施形態に係る半導体装置の製造方法の対象となる半導体装置10の構成について説明する。
本発明の第一実施形態に係る半導体装置の製造方法では、先ず、図2の上図に示されるように、半導体装置10を個片化する前の状態であるウェハ部材22をガラス基板14が下になるようにしてダイシングテープ30に貼り付ける。そして、この状態で、絶縁膜18、ウェハ12、及び、接着層16を貫通してガラス基板14の厚さ方向の一部まで延びる切り込み32をダイシングブレード24によって形成する(ダイシング工程)。
本発明の第二実施形態に係る半導体装置の製造方法では、先ず、図3の上図に示されるように、ウェハ部材22を外部接続端子20が下になるようにしてダイシングテープ40に貼り付ける。そして、この状態で、ガラス基板14の接着層16と反対側の表層部(厚さ方向の一部)に、ダイシングブレード24によって破断起点部としての切り込み42を形成する(破断起点部形成工程)。
本発明の第三実施形態に係る半導体装置の製造方法では、先ず、図4の上図に示されるように、ウェハ部材22をガラス基板14が下になるようにしてダイシングテープ60に貼り付ける。そして、この状態で、絶縁膜18、ウェハ12、及び、接着層16を貫通してガラス基板14の厚さ方向の一部まで延びる切り込み62をダイシングブレード24によって形成する(ダイシング工程)。
12 ウェハ
14 ガラス基板
16 接着層
18 絶縁膜
20 外部接続端子
24 ダイシングブレード
32,52,62 切り込み
42,72 切り込み(破断起点部)
Claims (2)
- 接着層によって互いに厚さ方向に貼り合わされたウェハ及びガラス基板を有するウェハ部材について、前記ガラス基板の前記接着層と反対側の表層部に破断起点部を形成する破断起点部形成工程と、
前記ウェハ部材の平面視において前記破断起点部と重複するように、前記ウェハ及び前記接着層を貫通して前記ガラス基板の前記破断起点部よりも前記接着層側の部分まで延びる切り込みをダイシングブレードによって形成するダイシング工程と、
前記ガラス基板の前記接着層と反対側の前記破断起点部の下に支持台を置き、前記支持台を挟んだ両側に前記ウェハ側から機械的応力を作用させて、前記破断起点部及び前記切り込みを起点として破断されるように前記ウェハ部材を複数の半導体装置に個片化させる個片化工程と、
を備えた半導体装置の製造方法。 - 接着層によって互いに厚さ方向に貼り合わされたウェハ及びガラス基板を有するウェハ部材について、前記ウェハ及び前記接着層を貫通して前記ガラス基板の厚さ方向の一部まで延びる切り込みをダイシングブレードによって形成するダイシング工程と、
前記ウェハ部材の平面視において前記切り込みと重複するように、前記ガラス基板の前記切り込みよりも前記接着層と反対側の表層部に破断起点部を形成する破断起点部形成工程と、
前記ウェハ側の前記切り込みの下に支持台を置き、前記支持台を挟んだ両側に前記ガラス基板側から機械的応力を作用させて、前記切り込み及び前記破断起点部を起点として破断されるように前記ウェハ部材を複数の半導体装置に個片化させる個片化工程と、
を備えた半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009077566A JP5436906B2 (ja) | 2009-03-26 | 2009-03-26 | 半導体装置の製造方法 |
US12/725,719 US8329561B2 (en) | 2009-03-26 | 2010-03-17 | Method of producing semiconductor device |
Applications Claiming Priority (1)
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JP2009077566A JP5436906B2 (ja) | 2009-03-26 | 2009-03-26 | 半導体装置の製造方法 |
Publications (2)
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JP2010232378A JP2010232378A (ja) | 2010-10-14 |
JP5436906B2 true JP5436906B2 (ja) | 2014-03-05 |
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JP2009077566A Active JP5436906B2 (ja) | 2009-03-26 | 2009-03-26 | 半導体装置の製造方法 |
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JP (1) | JP5436906B2 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011119535A (ja) * | 2009-12-04 | 2011-06-16 | Renesas Electronics Corp | 半導体製造装置及び半導体装置の製造方法 |
US20130140338A1 (en) | 2011-12-05 | 2013-06-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Splitting apparatus of liquid crystal display (lcd) and splitting method thereof |
TWI523208B (zh) * | 2013-01-10 | 2016-02-21 | 精材科技股份有限公司 | 影像感測晶片封裝體及其製作方法 |
JP6140030B2 (ja) * | 2013-08-21 | 2017-05-31 | 三星ダイヤモンド工業株式会社 | イメージセンサ用ウエハ積層体の分断方法 |
JP6005708B2 (ja) * | 2014-10-23 | 2016-10-12 | 三星ダイヤモンド工業株式会社 | イメージセンサ用ウエハ積層体の分断方法及び分断装置 |
JP6561565B2 (ja) * | 2015-04-30 | 2019-08-21 | 三星ダイヤモンド工業株式会社 | 貼り合わせ基板の分割方法及び分割装置 |
JP6561566B2 (ja) * | 2015-04-30 | 2019-08-21 | 三星ダイヤモンド工業株式会社 | 貼り合わせ基板の分割方法及び分割装置 |
JP6507866B2 (ja) * | 2015-06-09 | 2019-05-08 | 三星ダイヤモンド工業株式会社 | 半田ボール付き半導体チップの製造装置及び作製方法 |
CN111226313A (zh) | 2020-01-07 | 2020-06-02 | 长江存储科技有限责任公司 | 用于多晶圆堆叠和切割的方法 |
Family Cites Families (18)
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JPS56116639A (en) * | 1980-02-19 | 1981-09-12 | Nec Corp | Manufacturing of semiconductor chip |
JPS5718370A (en) * | 1980-07-09 | 1982-01-30 | Hitachi Ltd | Cutting method for semiconductor pressure sensor |
JPH0611071B2 (ja) * | 1983-09-07 | 1994-02-09 | 三洋電機株式会社 | 化合物半導体基板の分割方法 |
JPH04199848A (ja) * | 1990-11-29 | 1992-07-21 | Nec Corp | チップ分離方法 |
JP3530202B2 (ja) * | 1991-11-20 | 2004-05-24 | 株式会社デンソー | 集積化圧力センサの製造方法 |
JPH0864556A (ja) * | 1994-08-19 | 1996-03-08 | Nec Corp | ガラス基板の分離方法 |
JP2001135598A (ja) * | 1999-08-26 | 2001-05-18 | Seiko Epson Corp | ウエハのダイシング方法、半導体装置及びその製造方法、回路基板並びに電子機器 |
JP2002270543A (ja) * | 2001-03-14 | 2002-09-20 | Sony Corp | 基板の分割方法 |
JP3935189B2 (ja) | 2002-03-12 | 2007-06-20 | 浜松ホトニクス株式会社 | レーザ加工方法 |
US6794273B2 (en) * | 2002-05-24 | 2004-09-21 | Fujitsu Limited | Semiconductor device and manufacturing method thereof |
JP4938998B2 (ja) * | 2004-06-07 | 2012-05-23 | 富士通株式会社 | 基板及び積層体の切断方法、並びに積層体の製造方法 |
JP2006086509A (ja) * | 2004-08-17 | 2006-03-30 | Denso Corp | 半導体基板の分断方法 |
JP4485314B2 (ja) * | 2004-10-01 | 2010-06-23 | セイコープレシジョン株式会社 | 半導体素子の製造方法 |
JP4473715B2 (ja) * | 2004-11-29 | 2010-06-02 | 富士通株式会社 | 積層体切断方法及び積層体 |
JP2006258546A (ja) * | 2005-03-16 | 2006-09-28 | Denso Corp | 半導体センサの製造方法 |
TWI263284B (en) * | 2005-05-03 | 2006-10-01 | Advanced Semiconductor Eng | Method of fabricating wafer level package |
JP2009158700A (ja) * | 2007-12-26 | 2009-07-16 | Fujifilm Corp | 接合部材の切断方法 |
US20100015782A1 (en) * | 2008-07-18 | 2010-01-21 | Chen-Hua Yu | Wafer Dicing Methods |
-
2009
- 2009-03-26 JP JP2009077566A patent/JP5436906B2/ja active Active
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- 2010-03-17 US US12/725,719 patent/US8329561B2/en active Active
Also Published As
Publication number | Publication date |
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JP2010232378A (ja) | 2010-10-14 |
US8329561B2 (en) | 2012-12-11 |
US20100248450A1 (en) | 2010-09-30 |
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