JP5433462B2 - 半導体装置の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 79
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 239000013081 microcrystal Substances 0.000 claims description 79
- 238000000034 method Methods 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 43
- 238000000137 annealing Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 33
- 239000010408 film Substances 0.000 description 235
- 229910021417 amorphous silicon Inorganic materials 0.000 description 103
- 238000012986 modification Methods 0.000 description 53
- 230000004048 modification Effects 0.000 description 53
- 239000010703 silicon Substances 0.000 description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 41
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 33
- 239000013078 crystal Substances 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052814 silicon oxide Inorganic materials 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 230000001678 irradiating effect Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000470 constituent Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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Description
図1〜図4を用いて、本発明の第1の実施形態に係る半導体装置の製造方法を概略的に説明する。図1〜図4は、薄膜トランジスタ(TFT)の多結晶チャネルSiの形成方法について模式的に示した断面図である。
上述した第1の実施形態では、アモルファスシリコン膜中に微結晶を形成し、該微結晶にマイクロ波を照射することで平面構造に多結晶シリコン膜を形成する方法を説明した。第1の実施形態の変形例1では、第1の実施形態の多結晶シリコン膜の形成方法を用いて、ホール構造内に良質な多結晶を形成する方法を説明する。
第1の実施形態の変形例2では、3次元積層技術BiCS(Bit Cost Scalable)を用いた3次元構造を有する不揮発性半導体記憶装置に良質な多結晶チャネルシリコン膜を形成する方法を説明する。
上述した第1の実施形態では、アモルファスシリコン膜中に微結晶を形成し、該微結晶にマイクロ波を照射することで多結晶シリコン膜を形成する方法を説明した。第2の実施形態では、微結晶Geを形成し、微結晶Ge上にアモルファスシリコン膜を形成し、該微結晶にマイクロ波を照射することで多結晶シリコン膜を形成する方法を説明する。
上述した第2の実施形態では、微結晶Geを形成し、微結晶Ge上にアモルファスシリコン膜を形成し、該微結晶にマイクロ波を照射することで平面構造に多結晶シリコン膜を形成する方法を説明した。第2の実施形態の変形例1では、第2の実施形態の多結晶シリコン膜の形成方法を用いて、ホール構造内に良質な多結晶を形成する方法を説明する。
第2の実施形態の変形例2では、3次元積層技術BiCSを用いた3次元構造を有する不揮発性半導体記憶装置に良質な多結晶チャネルシリコン膜を形成する方法を説明する。
11…アモルファスシリコン膜
11a…微結晶
11b…多結晶チャネルシリコン膜
11c…ソース・ドレイン拡散層
12…ゲート絶縁膜
13…ゲート電極
20…電極
21…積層構造
22…絶縁膜
23…アモルファスシリコン膜
23a…微結晶
23b…多結晶チャネルシリコン膜
24…N膜
30…半導体基板
31…層間絶縁膜
32…制御ゲート電極
33…ブロック絶縁膜
34…電荷蓄積絶縁膜
35…トンネル絶縁膜
36…アモルファスシリコン膜
36a…微結晶
36b…多結晶チャネルシリコン膜
40…基板
41a…微結晶
41…アモルファスシリコン膜
41b…多結晶チャネルシリコン膜
42…ゲート絶縁膜
43…ゲート電極
43c…ソース・ドレイン拡散層
50…電極
51…積層構造
52…絶縁膜
53…アモルファスシリコン膜
53a…微結晶
53b…多結晶チャネルシリコン膜
54…N膜
60…半導体基板
61…層間絶縁膜
62…制御ゲート電極
63…ブロック絶縁膜
64…電荷蓄積絶縁膜
65…トンネル絶縁膜
66a…微結晶
66…アモルファスシリコン膜
66b…多結晶チャネルシリコン膜
Claims (6)
- 基板上にアモルファス半導体膜を堆積し、
前記アモルファス半導体膜に対して第1のアニールを行うことで前記アモルファス半導体膜内に微結晶を形成し、
前記微結晶を含むアモルファス半導体膜に対してマイクロ波を照射して第2のアニールを前記基板の温度が200〜600℃となるよう行うことで、前記微結晶を核として前記微結晶を含むアモルファス半導体膜を結晶化することを特徴とする半導体装置の製造方法。 - 前記第2のアニールは、前記第1のアニールの温度以下であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記第1のアニールは、0.1ms〜2sのアニールであることを特徴とする請求項1または2のいずれか一項に記載の半導体装置の製造方法。
- 前記微結晶を含むアモルファス半導体膜は、Si及びGeを含むことを特徴とする請求項1乃至3のいずれか一項に記載の半導体装置の製造方法。
- 前記微結晶はGeを含むことを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置の製造方法。
- 前記Geを含む微結晶はCVDを用いて106〜1011個/cm2の密度となるように形成されることを特徴とする請求項5に記載の半導体装置の製造方法。
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JP2012033750A (ja) * | 2010-07-30 | 2012-02-16 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2012182312A (ja) | 2011-03-01 | 2012-09-20 | Toshiba Corp | 半導体装置の製造方法 |
JP5615207B2 (ja) | 2011-03-03 | 2014-10-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP2012234864A (ja) | 2011-04-28 | 2012-11-29 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2013058592A (ja) | 2011-09-08 | 2013-03-28 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP5717598B2 (ja) * | 2011-09-27 | 2015-05-13 | 株式会社東芝 | 半導体製造装置および半導体製造方法 |
JP6163442B2 (ja) * | 2014-03-05 | 2017-07-12 | 株式会社東芝 | 半導体製造装置及び半導体装置の製造方法 |
US9859298B1 (en) | 2016-06-23 | 2018-01-02 | Sandisk Technologies Llc | Amorphous silicon layer in memory device which reduces neighboring word line interference |
KR102629466B1 (ko) * | 2016-09-21 | 2024-01-26 | 에스케이하이닉스 주식회사 | 반도체 장치의 제조 방법 |
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JPS6143417A (ja) * | 1984-08-08 | 1986-03-03 | Hitachi Ltd | 加熱処理方法とそれを用いた加熱装置 |
JP2510157B2 (ja) * | 1986-03-31 | 1996-06-26 | キヤノン株式会社 | 半導体の改質処理方法 |
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