JP5416711B2 - メタルラップスルーと改良されたパッシベーションを有する光電池 - Google Patents

メタルラップスルーと改良されたパッシベーションを有する光電池 Download PDF

Info

Publication number
JP5416711B2
JP5416711B2 JP2010536432A JP2010536432A JP5416711B2 JP 5416711 B2 JP5416711 B2 JP 5416711B2 JP 2010536432 A JP2010536432 A JP 2010536432A JP 2010536432 A JP2010536432 A JP 2010536432A JP 5416711 B2 JP5416711 B2 JP 5416711B2
Authority
JP
Japan
Prior art keywords
layer
semiconductor layer
oxide
dielectric
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2010536432A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011505704A5 (enExample
JP2011505704A (ja
Inventor
フレデリク・ドロス
クリストフ・アルベ
ヨゼフ・スルフシク
ギイ・ボカルヌ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=39683568&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JP5416711(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC
Publication of JP2011505704A publication Critical patent/JP2011505704A/ja
Publication of JP2011505704A5 publication Critical patent/JP2011505704A5/ja
Application granted granted Critical
Publication of JP5416711B2 publication Critical patent/JP5416711B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
JP2010536432A 2007-12-03 2008-12-02 メタルラップスルーと改良されたパッシベーションを有する光電池 Expired - Fee Related JP5416711B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP07122152A EP2068369A1 (en) 2007-12-03 2007-12-03 Photovoltaic cells having metal wrap through and improved passivation
EP07122152.7 2007-12-03
US99229807P 2007-12-04 2007-12-04
US60/992,298 2007-12-04
PCT/EP2008/066662 WO2009071561A2 (en) 2007-12-03 2008-12-02 Photovoltaic cells having metal wrap through and improved passivation

Publications (3)

Publication Number Publication Date
JP2011505704A JP2011505704A (ja) 2011-02-24
JP2011505704A5 JP2011505704A5 (enExample) 2011-07-28
JP5416711B2 true JP5416711B2 (ja) 2014-02-12

Family

ID=39683568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010536432A Expired - Fee Related JP5416711B2 (ja) 2007-12-03 2008-12-02 メタルラップスルーと改良されたパッシベーションを有する光電池

Country Status (7)

Country Link
US (1) US9246044B2 (enExample)
EP (2) EP2068369A1 (enExample)
JP (1) JP5416711B2 (enExample)
CN (1) CN101889349A (enExample)
AT (1) ATE511215T1 (enExample)
ES (1) ES2365679T5 (enExample)
WO (1) WO2009071561A2 (enExample)

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8481357B2 (en) 2008-03-08 2013-07-09 Crystal Solar Incorporated Thin film solar cell with ceramic handling layer
KR101573934B1 (ko) * 2009-03-02 2015-12-11 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR101627217B1 (ko) * 2009-03-25 2016-06-03 엘지전자 주식회사 태양전지 및 그 제조방법
KR100984700B1 (ko) 2009-06-04 2010-10-01 엘지전자 주식회사 태양 전지 및 그 제조 방법
KR100990110B1 (ko) * 2009-08-18 2010-10-29 엘지전자 주식회사 태양 전지
DE102009029373A1 (de) * 2009-09-11 2011-04-07 Carl Zeiss Smt Gmbh Beschichtungsverfahren für die Mikrolithographie
DE102009029374A1 (de) * 2009-09-11 2011-04-07 Carl Zeiss Smt Gmbh Beschichtungsverfahren für die Mikrolithographie
US20110083735A1 (en) * 2009-10-13 2011-04-14 Ips Ltd. Solar cell and method of fabricating the same
CN102576764A (zh) * 2009-10-15 2012-07-11 Lg伊诺特有限公司 太阳能电池设备及其制造方法
KR101146734B1 (ko) * 2009-10-26 2012-05-17 엘지전자 주식회사 태양 전지 셀 및 이를 구비한 태양 전지 모듈
US8115097B2 (en) * 2009-11-19 2012-02-14 International Business Machines Corporation Grid-line-free contact for a photovoltaic cell
CN102640231A (zh) * 2009-11-25 2012-08-15 E·I·内穆尔杜邦公司 用于形成钝化发射极的银背面电极以及形成背面接触硅太阳能电池的方法
DE102010025983A1 (de) * 2010-03-03 2011-09-08 Centrotherm Photovoltaics Ag Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung
DE102010028187A1 (de) * 2010-04-26 2011-10-27 Robert Bosch Gmbh Verfahren zur Herstellung einer Metal-Wrap-Through-Solarzelle sowie eine nach diesem Verfahren hergestellte Metal-Wrap-Through-Solarzelle
KR101125435B1 (ko) 2010-05-07 2012-03-27 현대중공업 주식회사 Ｍｗｔ형 태양전지
NL2004698C2 (en) * 2010-05-11 2011-11-15 Stichting Energie Solar cell and method of manufacturing such a solar cell.
KR101823709B1 (ko) * 2010-05-11 2018-02-01 쉬티흐틴크 에네르지온데르조크 센트룸 네델란드 태양전지 및 그 태양전지의 제조방법
WO2011145731A1 (ja) * 2010-05-20 2011-11-24 京セラ株式会社 太陽電池素子およびその製造方法ならびに太陽電池モジュール
DE102010026960A1 (de) * 2010-07-12 2012-01-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle und Verfahren zur Herstellung einer photovoltaischen Solarzelle
US8883552B2 (en) 2010-08-11 2014-11-11 Crystal Solar Inc. MWT architecture for thin SI solar cells
NL2005261C2 (en) * 2010-08-24 2012-02-27 Solland Solar Cells B V Back contacted photovoltaic cell with an improved shunt resistance.
EP2423981B1 (en) * 2010-08-27 2018-11-28 LG Electronics Inc. Method of manufacturing solar cell electrodes by paste firing
JP5496354B2 (ja) * 2010-10-05 2014-05-21 三菱電機株式会社 光起電力装置およびその製造方法
WO2012051626A2 (en) * 2010-10-15 2012-04-19 Nanosolar, Inc. Solar cell architecture having a plurality of vias with shaped foil via interior
DE112010005950T5 (de) * 2010-10-20 2013-08-14 Mitsubishi Electric Corporation Photovoltaikvorrichtung und Herstellungsverfahren für diese
DE102010060303A1 (de) 2010-11-02 2012-05-03 Solarworld Innovations Gmbh Verfahren zum Herstellen einer Solarzelle
CN102468365B (zh) * 2010-11-18 2014-07-16 台湾茂矽电子股份有限公司 双面太阳能电池的制造方法
IT1403828B1 (it) 2010-12-02 2013-10-31 Applied Materials Italia Srl Procedimento per la stampa di un substrato
KR101699310B1 (ko) * 2010-12-17 2017-02-13 엘지전자 주식회사 태양 전지 및 그 제조 방법
DE102011010077A1 (de) * 2011-02-01 2012-08-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Photovoltaische Solarzelle sowie Verfahren zu deren Herstellung
NL2006160C2 (en) * 2011-02-08 2012-08-09 Tsc Solar B V A method of manufacturing a solar cell and a solar cell.
US20130061918A1 (en) * 2011-03-03 2013-03-14 E. I. Dupont De Nemours And Company Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell
WO2012129184A1 (en) 2011-03-18 2012-09-27 Crystal Solar, Inc. Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells
CN103430319B (zh) * 2011-03-31 2016-01-20 京瓷株式会社 太阳能电池元件及太阳能电池模块
CN102157576A (zh) * 2011-03-31 2011-08-17 镇江大全太阳能有限公司 高效晶体硅太阳能电池结构及其制造方法
CN202196801U (zh) * 2011-05-27 2012-04-18 苏州阿特斯阳光电力科技有限公司 光电转换装置
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
CN102800742B (zh) * 2011-05-27 2016-04-13 苏州阿特斯阳光电力科技有限公司 背接触晶体硅太阳能电池片制造方法
CN202196784U (zh) * 2011-05-27 2012-04-18 苏州阿特斯阳光电力科技有限公司 光电转换装置
KR101563412B1 (ko) * 2011-04-04 2015-10-26 미쓰비시덴키 가부시키가이샤 태양전지 및 그 제조 방법, 태양전지 모듈
DE112012001787A5 (de) 2011-04-19 2014-01-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Solarzelle
CN102201460A (zh) * 2011-05-09 2011-09-28 马鞍山优异光伏有限公司 一种新型的晶体硅太阳能电池及其制备方法
KR101218411B1 (ko) * 2011-05-25 2013-01-21 현대중공업 주식회사 태양전지 및 그 제조 방법
US9281435B2 (en) 2011-05-27 2016-03-08 Csi Cells Co., Ltd Light to current converter devices and methods of manufacturing the same
DE102012102745A1 (de) * 2011-07-29 2013-01-31 Schott Solar Ag Verfahren zur Herstellung einer Solarzelle sowie Solarzelle
US20130192671A1 (en) * 2011-08-11 2013-08-01 E I Du Pont De Nemours And Company Conductive metal paste and use thereof
DE102011053238A1 (de) 2011-09-02 2013-03-07 Schott Solar Ag Verfahren zum Verbinden von Solarzellen sowie Solarzellenmodul
US10038109B2 (en) 2011-09-09 2018-07-31 Heraeus Precious Metals North America Conshohocken Llc Silver solar cell contacts
CN102386249B (zh) * 2011-10-31 2013-08-14 北京吉阳技术股份有限公司 一种下一代结构高效率晶体硅电池及制作方法
FR2983346B1 (fr) * 2011-11-25 2016-12-09 Soitec Silicon On Insulator Procede de prevention d'une panne electrique dans un empilement de couches semi-conductrices, cellule photovoltaïque a concentration a substrat mince, et assemblage de cellule solaire
WO2013095010A1 (en) * 2011-12-23 2013-06-27 Hanwha Chemical Corporation Manufacturing method of back contact solar cell
KR101341831B1 (ko) 2011-12-23 2013-12-17 한화케미칼 주식회사 후면 전극 태양전지의 제조방법
AU2012362505B2 (en) * 2011-12-26 2015-08-20 Solexel, Inc. Systems and methods for enhanced light trapping in solar cells
TW201340347A (zh) * 2012-03-22 2013-10-01 Motech Ind Inc 太陽能電池
US9190294B2 (en) * 2012-08-23 2015-11-17 Michael Xiaoxuan Yang Methods and apparatus for separating a substrate
JP5896378B2 (ja) * 2012-08-30 2016-03-30 日立造船株式会社 Ｃｎｔ太陽電池
GB2508792A (en) 2012-09-11 2014-06-18 Rec Modules Pte Ltd Back contact solar cell cell interconnection arrangements
US10304977B1 (en) * 2012-09-26 2019-05-28 National Technology & Engineering Solutions Of Sandia, Llc High performance ultra-thin solar cell structures
US8772949B2 (en) 2012-11-07 2014-07-08 International Business Machines Corporation Enhanced capture pads for through semiconductor vias
JP2016058408A (ja) * 2013-01-31 2016-04-21 パナソニック株式会社 光起電力装置
TW201505199A (zh) * 2013-05-08 2015-02-01 Cima Nanotech Israel Ltd 製造具有背側鈍化層之光伏打電池的方法
WO2015042524A1 (en) 2013-09-23 2015-03-26 Siva Power, Inc. Thin-film photovoltaic devices with discontinuous passivation layers
DE102013111680A1 (de) * 2013-10-23 2015-04-23 Solarworld Innovations Gmbh Solarzelle und Verfahren zum Herstellen einer Solarzelle
RU2559048C1 (ru) * 2014-01-15 2015-08-10 Открытое акционерное общество "Научно-производственное предприятие "Пульсар" Гибридный фотопреобразователь
CN103904142A (zh) * 2014-03-25 2014-07-02 中国科学院半导体研究所 具备背电极局域随机点接触太阳电池及制备方法
US9716192B2 (en) * 2014-03-28 2017-07-25 International Business Machines Corporation Method for fabricating a photovoltaic device by uniform plating on emitter-lined through-wafer vias and interconnects
CN106104812A (zh) * 2014-05-14 2016-11-09 应用材料意大利有限公司 太阳能电池装置及制造太阳能电池装置的方法
CN104009102A (zh) * 2014-06-16 2014-08-27 中电投西安太阳能电力有限公司 背钝化层结构、背钝化p型太阳能电池及其制备方法
JP6219913B2 (ja) 2014-11-28 2017-10-25 エルジー エレクトロニクス インコーポレイティド 太陽電池及びその製造方法
CN105304730A (zh) * 2015-09-23 2016-02-03 浙江正泰太阳能科技有限公司 一种具有背钝化膜的mwt电池及其制备方法
TWM539701U (zh) * 2016-08-24 2017-04-11 新日光能源科技股份有限公司 太陽能電池
US11437533B2 (en) * 2016-09-14 2022-09-06 The Boeing Company Solar cells for a solar cell array
CN110050352B (zh) * 2016-11-07 2022-04-29 信越化学工业株式会社 高效率太阳能电池的制造方法
DE102018001057B4 (de) * 2018-02-07 2025-12-04 Ce Cell Engineering Gmbh Verfahren zur Verbesserung des ohmschen Kontaktverhaltens zwischen einem Kontaktgitter und einer Emitterschicht einer Siliziumsolarzelle
US11538956B2 (en) * 2018-04-27 2022-12-27 Illinois Tool Works Inc. Methods and apparatus to control zone temperatures of a solar cell production system
CN108682699B (zh) * 2018-05-22 2021-06-08 江苏日托光伏科技股份有限公司 一种低成本的mwt太阳能电池正电极的制备方法
JP2020088081A (ja) * 2018-11-21 2020-06-04 セイコーエプソン株式会社 光電変換装置、光電変換モジュール、電子機器及び光電変換装置の製造方法
CN109473493A (zh) * 2018-12-20 2019-03-15 江苏日托光伏科技股份有限公司 一种mwt异质结硅太阳电池及其制备方法
CN109545906A (zh) * 2018-12-24 2019-03-29 江苏日托光伏科技股份有限公司 一种mwt+perc太阳能电池的生产方法
CN109980025A (zh) * 2018-12-29 2019-07-05 江苏日托光伏科技股份有限公司 金属穿孔卷绕硅太阳能电池电极制备方法
US12191407B2 (en) * 2019-04-23 2025-01-07 Kaneka Corporation Crystal silicon solar cell module and cell aggregate for crystal silicon solar cell module
DE102019006093A1 (de) * 2019-08-29 2021-03-04 Azur Space Solar Power Gmbh Schutzverfahren für Durchgangsöffnungen einer Halbleiterscheibe
DE102019006097A1 (de) * 2019-08-29 2021-03-04 Azur Space Solar Power Gmbh Passivierungsverfahren für ein Durchgangsloch einer Halbleiterscheibe
WO2021200837A1 (ja) * 2020-03-30 2021-10-07 株式会社カネカ セル集合体、セル集合体の製造方法、太陽電池セル、及び、太陽電池セルの製造方法
CN115803893A (zh) * 2020-07-22 2023-03-14 维耶尔公司 微光电装置
EP4053920A1 (de) * 2021-03-02 2022-09-07 AZUR SPACE Solar Power GmbH Solarzellenkontaktanordnung
CN113327997B (zh) * 2021-07-15 2025-10-03 浙江爱旭太阳能科技有限公司 一种背接触太阳能电池串及制备方法、组件及系统
CN115602754B (zh) * 2022-09-07 2025-11-04 英利能源发展有限公司 一种无遮光钝化接触mwt电池的制备方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3903427A (en) * 1973-12-28 1975-09-02 Hughes Aircraft Co Solar cell connections
JPS61292379A (ja) * 1985-06-19 1986-12-23 Sharp Corp ラツパラウンドコンタクトセル
JPS6482570A (en) * 1987-09-24 1989-03-28 Mitsubishi Electric Corp Manufacture of photoelectric conversion device
WO1989005521A1 (en) * 1987-12-03 1989-06-15 Spectrolab, Inc. Solar cell panel
US5425816A (en) * 1991-08-19 1995-06-20 Spectrolab, Inc. Electrical feedthrough structure and fabrication method
DE19650111B4 (de) * 1996-12-03 2004-07-01 Siemens Solar Gmbh Solarzelle mit geringer Abschattung und Verfahren zur Herstellung
EP0881694A1 (en) 1997-05-30 1998-12-02 Interuniversitair Micro-Elektronica Centrum Vzw Solar cell and process of manufacturing the same
US6716737B2 (en) * 2002-07-29 2004-04-06 Hewlett-Packard Development Company, L.P. Method of forming a through-substrate interconnect
US7170001B2 (en) * 2003-06-26 2007-01-30 Advent Solar, Inc. Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias
US20050172996A1 (en) * 2004-02-05 2005-08-11 Advent Solar, Inc. Contact fabrication of emitter wrap-through back contact silicon solar cells
US20060060238A1 (en) * 2004-02-05 2006-03-23 Advent Solar, Inc. Process and fabrication methods for emitter wrap through back contact solar cells
JP2006073617A (ja) * 2004-08-31 2006-03-16 Sharp Corp 太陽電池およびその製造方法
JP2006156646A (ja) * 2004-11-29 2006-06-15 Sharp Corp 太陽電池の製造方法
US20070186971A1 (en) * 2005-01-20 2007-08-16 Nanosolar, Inc. High-efficiency solar cell with insulated vias
EP1763086A1 (en) 2005-09-09 2007-03-14 Interuniversitair Micro-Elektronica Centrum Photovoltaic cell with thick silicon oxide and silicon nitride passivation and fabrication method
JP2007311425A (ja) * 2006-05-16 2007-11-29 Nippon Telegr & Teleph Corp <Ntt> 太陽電池の製造方法および太陽電池

Also Published As

Publication number Publication date
US9246044B2 (en) 2016-01-26
US20110005582A1 (en) 2011-01-13
EP2068369A1 (en) 2009-06-10
ES2365679T3 (es) 2011-10-10
CN101889349A (zh) 2010-11-17
WO2009071561A3 (en) 2009-12-10
EP2215663A2 (en) 2010-08-11
ATE511215T1 (de) 2011-06-15
ES2365679T5 (es) 2017-02-24
EP2215663B1 (en) 2011-05-25
WO2009071561A2 (en) 2009-06-11
JP2011505704A (ja) 2011-02-24
EP2215663B2 (en) 2016-08-17

Similar Documents

Publication Publication Date Title
JP5416711B2 (ja) メタルラップスルーと改良されたパッシベーションを有する光電池
EP3685445B1 (en) Interdigitated back-contacted solar cell with p-type conductivity
US20110253211A1 (en) Solar cell and method for manufacturing same
AU2006224719B2 (en) Photovoltaic cell with thick silicon oxide and silicon nitride passivation fabrication
CA2181281C (en) Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
KR102221380B1 (ko) 넓은 밴드갭 반도체 재료를 갖는 이미터 영역을 구비한 태양 전지
JP5172480B2 (ja) 光電変換装置およびその製造方法
KR101823709B1 (ko) 태양전지 및 그 태양전지의 제조방법
US9087940B2 (en) Photovoltaic solar cell and method for producing a photovoltaic solar cell
CN108649079A (zh) 具有钝化接触结构的指状交叉背接触太阳电池及其制备方法
KR20100136462A (ko) 단결정 ｎ 실리콘 태양 전지를 제조하는 방법 및 상기 방법으로 제조된 태양 전지
CN101124681A (zh) 发射极环绕型背触点硅太阳能电池的触点制备
CN1241298A (zh) 具有选择性扩散区的半导体器件
WO2013148047A1 (en) Doped ai paste for local alloyed junction formation with low contact resistance
CN108666377A (zh) 一种p型背接触太阳电池及其制备方法
US20100319766A1 (en) Solar cell and method for manufacturing the same
JPWO2010001473A1 (ja) 光起電力装置およびその製造方法
JP2014146766A (ja) 太陽電池の製造方法及び太陽電池
JPWO2017146214A1 (ja) 太陽電池素子
EP3493272B1 (en) Solar cell element and method for manufacturing solar cell element
CN108987503A (zh) 一种具有隔离区域的指状交叉背接触太阳电池及其制备方法
WO2014137284A1 (en) Method of fabricating a solar cell
KR20130113002A (ko) 식각 용액 보호층을 이용한 선택적 에미터층을 형성하는 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110610

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110610

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20121120

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130219

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130909

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20130909

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20131011

TRDD Decision of grant or rejection written
A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131115

R150 Certificate of patent or registration of utility model

Ref document number: 5416711

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees