CN109545906A - 一种mwt+perc太阳能电池的生产方法 - Google Patents

一种mwt+perc太阳能电池的生产方法 Download PDF

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CN109545906A
CN109545906A CN201811580560.3A CN201811580560A CN109545906A CN 109545906 A CN109545906 A CN 109545906A CN 201811580560 A CN201811580560 A CN 201811580560A CN 109545906 A CN109545906 A CN 109545906A
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film
mwt
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沙炜惠
职森森
吴仕梁
路忠林
张凤鸣
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Jiangsu Sunport Power Corp Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

本发明公开了一种MWT+PERC太阳能电池的生产方法,刻蚀工艺中在扩散后的电池片上保留PN结,然后退火;打孔工艺中,制作圆锥形孔洞,电池片正面孔洞直径小于背面孔洞直径;背钝化工艺时,在孔洞内部生成Al2O3膜;镀膜工艺时,孔洞背面和正面的SiNx膜都从表面向孔洞中部生长,最终在孔洞中相交汇,镀膜工艺后,孔洞内部形成SiNx膜,在结合之前的PN结和Al2O3膜,改善漏电情况;在堵孔过程中,选择合适的堵孔浆料,控制浆料对PN结、Al2O3膜和SiNx膜的侵蚀,进一步改善漏电情况,在接12V反向电流下,漏电流为2A及2A以下。同时保证浆料不会剥离、脱落的情况分发生。

Description

一种MWT+PERC太阳能电池的生产方法
技术领域
本发明涉及一种MWT+PERC太阳能电池的生产方法,属于太阳能电池组件生产加工技术领域。
背景技术
MWT技术和PREC技术都可以提高太阳能电池的效率,运用两者技术,单晶太阳能电池最高达到22.0%以上,黑硅多晶太阳能电池最高达到21%以上。其前景美好,但由于MWT技术的原因(孔洞要绝缘),其漏电是一道急需解决的难题。
从理论上MWT+PERC的电池的孔洞中无需PN结。因为应用PERC技术,可在正反面形成有绝缘相关的SiNx膜。实际生产中,背面孔洞可以不保留PN结,因为背面光滑且SiNx膜足够厚。但孔洞内部形成的膜很薄,且孔洞内并非光滑,有裂缝和凸起;加剧了漏电情况。因此孔洞内需要PN结。
现有技术中,MWT+PERC太阳能电池生产工艺中的掩膜工艺,保证孔洞内部和背面孔洞周围的PN结,减少漏电的发生。但增加掩膜工艺,提高了成本。若无掩膜保护,在刻蚀时,孔洞内部PN结会被侵蚀,会增加漏电的产生几率。
发明内容
发明目的:针对现有技术中存在的问题与不足,本发明提出一种MWT+PERC太阳能电池的生产方法,在改善漏电性能的前提下,降低生产成本。
技术方案:一种MWT+PERC太阳能电池的生产方法,刻蚀工艺中在扩散后的电池片上保留PN结,然后退火;打孔工艺中,制作圆锥形孔洞,电池片正面孔洞直径小于背面孔洞直径;背钝化工艺时,在孔洞内部生成Al2O3膜;镀膜工艺时,孔洞背面和正面的SiNx膜都从表面向孔洞中部生长,最终在孔洞中相交汇,镀膜工艺后,孔洞内部形成SiNx膜,在结合之前的PN结和Al2O3膜,改善漏电情况;在堵孔过程中,选择谷阳03号堵孔浆料,控制浆料对PN结、Al2O3膜和SiNx膜的侵蚀,进一步改善漏电情况,在接12V反向电流下,漏电流为2A及2A以下。同时保证浆料不会剥离、脱落的情况分发生。
所述刻蚀工艺中在扩散后的电池片上保留部分PN结。
对于meye设备,所述背钝化工艺时,在Al2O3膜厚在开口处为18nm,往孔洞中逐渐变薄。
对于ALD设备,所述背钝化工艺时,在Al2O3膜厚在开口处为2-3nm,往孔洞中逐渐变薄。
镀膜工艺时,在孔洞内部形成SiNx膜,且SiNx膜覆盖孔洞内部;孔洞背面开口处的膜厚为130±10nm,正面面开口处的膜厚为80±5nm,往孔洞内部逐渐减少,直至相交汇。
有益效果:与现有技术相比,本发明所提供的MWT+PERC太阳能电池的生产方法,可以保证电池效率和改善漏电情况的前提下,减少工序,降低成本,保持竞争力。
附图说明
图1是本发明实施例的孔洞及周围结构示意图;
图2是本发明实施例的孔洞内部示意图。
具体实施方式
下面结合具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
以158.75*158.75mm尺寸的黑硅多晶为例,刻蚀工艺中在扩散后的电池片上保留部分PN结,然后退火;打孔工艺中,制作圆锥形孔洞,电池片正面孔洞直径小于背面孔洞直径,如图1所示;背钝化工艺时,在孔洞内部生成Al2O3膜;镀膜工艺时,孔洞背面和正面的SiNx膜都从表面向孔洞中部生长,最终在孔洞中相交汇,镀膜工艺后,孔洞内部形成SiNx膜,在结合之前的PN结和Al2O3膜,改善漏电情况;
如图2所示,孔洞内部有由刻蚀后残留的PN结、Al2O3膜和正背面的SiNx膜一起形成的保护层,防止堵孔浆料接触P-Si基区,造成漏电。正背面的SiNx膜在孔洞中交汇,则效果最理想。
在堵孔过程中,选择谷阳03号堵孔浆料,控制浆料对PN结、Al2O3膜和SiNx膜的侵蚀,进一步改善漏电情况,在接12V反向电流下,漏电流为1A及1A以下。同时保证浆料不会剥离、脱落的情况分发生。
背钝化工艺时,在Al2O3膜厚在开口处为18nm(meye设备)和2-3nm(ALD设备),往孔洞中逐渐变薄。
镀膜工艺时,在孔洞内部形成SiNx膜,且SiNx膜覆盖孔洞内部;孔洞背面开口处的膜厚为130±10nm,正面面开口处的膜厚为80±5nm,往孔洞内部逐渐减少,直至相交汇。

Claims (5)

1.一种MWT+PERC太阳能电池的生产方法,其特征在于:刻蚀工艺中在扩散后的电池片上保留PN结,然后退火;打孔工艺中,制作圆锥形孔洞,电池片正面孔洞直径小于背面孔洞直径;背钝化工艺时,在孔洞内部生成Al2O3膜;镀膜工艺时,孔洞背面和正面的SiNx膜都从表面向孔洞中部生长,最终在孔洞中相交汇,镀膜工艺后,孔洞内部形成SiNx膜;在堵孔过程中,选择谷阳03号堵孔浆料。
2.如权利要求1所述的MWT+PERC太阳能电池的生产方法,其特征在于:所述刻蚀工艺中在扩散后的电池片上保留部分PN结。
3.如权利要求1所述的MWT+PERC太阳能电池的生产方法,其特征在于:对于meye设备,所述背钝化工艺时,在Al2O3膜厚在开口处为18nm,往孔洞中逐渐变薄。
4.如权利要求1所述的MWT+PERC太阳能电池的生产方法,其特征在于:对于ALD设备,所述背钝化工艺时,在Al2O3膜厚在开口处为2-3nm,往孔洞中逐渐变薄。
5.如权利要求1所述的MWT+PERC太阳能电池的生产方法,其特征在于:镀膜工艺时,在孔洞内部形成SiNx膜,且SiNx膜覆盖孔洞内部;孔洞背面开口处的膜厚为130±10nm,正面面开口处的膜厚为80±5nm,往孔洞内部逐渐减少,直至相交汇。
CN201811580560.3A 2018-12-24 2018-12-24 一种mwt+perc太阳能电池的生产方法 Pending CN109545906A (zh)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101889349A (zh) * 2007-12-03 2010-11-17 Imec公司 包括金属覆盖穿通以及改进的钝化的光生伏打电池
CN103258915A (zh) * 2013-05-31 2013-08-21 英利集团有限公司 Mwt太阳能电池片及其制作方法
CN103620800A (zh) * 2011-04-19 2014-03-05 弗劳恩霍弗实用研究促进协会 用于制造太阳能电池的方法
CN108198905A (zh) * 2017-12-28 2018-06-22 南京日托光伏科技股份有限公司 一种选择发射极的mwt太阳能电池的制备方法
CN108198906A (zh) * 2017-12-29 2018-06-22 南京日托光伏科技股份有限公司 一种高效mwt太阳能电池的制备方法
CN108198903A (zh) * 2017-12-28 2018-06-22 南京日托光伏科技股份有限公司 一种背面镀膜处理的mwt太阳能电池的制备方法
CN108346716A (zh) * 2018-03-29 2018-07-31 江苏微导纳米装备科技有限公司 一种晶硅太阳能电池的制造工艺

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101889349A (zh) * 2007-12-03 2010-11-17 Imec公司 包括金属覆盖穿通以及改进的钝化的光生伏打电池
CN103620800A (zh) * 2011-04-19 2014-03-05 弗劳恩霍弗实用研究促进协会 用于制造太阳能电池的方法
CN103258915A (zh) * 2013-05-31 2013-08-21 英利集团有限公司 Mwt太阳能电池片及其制作方法
CN108198905A (zh) * 2017-12-28 2018-06-22 南京日托光伏科技股份有限公司 一种选择发射极的mwt太阳能电池的制备方法
CN108198903A (zh) * 2017-12-28 2018-06-22 南京日托光伏科技股份有限公司 一种背面镀膜处理的mwt太阳能电池的制备方法
CN108198906A (zh) * 2017-12-29 2018-06-22 南京日托光伏科技股份有限公司 一种高效mwt太阳能电池的制备方法
CN108346716A (zh) * 2018-03-29 2018-07-31 江苏微导纳米装备科技有限公司 一种晶硅太阳能电池的制造工艺

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