CN101889349A - 包括金属覆盖穿通以及改进的钝化的光生伏打电池 - Google Patents

包括金属覆盖穿通以及改进的钝化的光生伏打电池 Download PDF

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Publication number
CN101889349A
CN101889349A CN2008801192393A CN200880119239A CN101889349A CN 101889349 A CN101889349 A CN 101889349A CN 2008801192393 A CN2008801192393 A CN 2008801192393A CN 200880119239 A CN200880119239 A CN 200880119239A CN 101889349 A CN101889349 A CN 101889349A
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layer
oxide
dielectric layer
semiconductor layer
contact
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CN2008801192393A
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English (en)
Chinese (zh)
Inventor
F·德罗斯
C·阿尔贝
J·什勒夫奇克
G·博卡恩
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Imec Corp
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Photovoltech
Imec Corp
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Application filed by Photovoltech, Imec Corp filed Critical Photovoltech
Publication of CN101889349A publication Critical patent/CN101889349A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN2008801192393A 2007-12-03 2008-12-02 包括金属覆盖穿通以及改进的钝化的光生伏打电池 Pending CN101889349A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP07122152A EP2068369A1 (en) 2007-12-03 2007-12-03 Photovoltaic cells having metal wrap through and improved passivation
EP07122152.7 2007-12-03
US99229807P 2007-12-04 2007-12-04
US60/992,298 2007-12-04
PCT/EP2008/066662 WO2009071561A2 (en) 2007-12-03 2008-12-02 Photovoltaic cells having metal wrap through and improved passivation

Publications (1)

Publication Number Publication Date
CN101889349A true CN101889349A (zh) 2010-11-17

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CN2008801192393A Pending CN101889349A (zh) 2007-12-03 2008-12-02 包括金属覆盖穿通以及改进的钝化的光生伏打电池

Country Status (7)

Country Link
US (1) US9246044B2 (enExample)
EP (2) EP2068369A1 (enExample)
JP (1) JP5416711B2 (enExample)
CN (1) CN101889349A (enExample)
AT (1) ATE511215T1 (enExample)
ES (1) ES2365679T5 (enExample)
WO (1) WO2009071561A2 (enExample)

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CN102386249A (zh) * 2011-10-31 2012-03-21 北京中联科伟达技术股份有限公司 一种下一代结构高效率晶体硅电池及制作方法
CN102800742A (zh) * 2011-05-27 2012-11-28 苏州阿特斯阳光电力科技有限公司 背接触晶体硅太阳能电池片制造方法
WO2012162906A1 (zh) * 2011-05-27 2012-12-06 苏州阿特斯阳光电力科技有限公司 光电转换装置
WO2012162904A1 (zh) * 2011-05-27 2012-12-06 苏州阿特斯阳光电力科技有限公司 光电转换装置
CN103430319A (zh) * 2011-03-31 2013-12-04 京瓷株式会社 太阳能电池元件及太阳能电池模块
CN103460402A (zh) * 2011-04-04 2013-12-18 三菱电机株式会社 太阳能电池及其制造方法、太阳能电池模块
CN103503080A (zh) * 2011-03-03 2014-01-08 E.I.内穆尔杜邦公司 用于形成钝化发射极的银背面电极和背面接触硅太阳能电池的方法
CN103904142A (zh) * 2014-03-25 2014-07-02 中国科学院半导体研究所 具备背电极局域随机点接触太阳电池及制备方法
CN104009102A (zh) * 2014-06-16 2014-08-27 中电投西安太阳能电力有限公司 背钝化层结构、背钝化p型太阳能电池及其制备方法
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CN109473493A (zh) * 2018-12-20 2019-03-15 江苏日托光伏科技股份有限公司 一种mwt异质结硅太阳电池及其制备方法
CN109545906A (zh) * 2018-12-24 2019-03-29 江苏日托光伏科技股份有限公司 一种mwt+perc太阳能电池的生产方法
CN111742417A (zh) * 2018-02-07 2020-10-02 贺利氏德国有限两合公司 改善硅太阳能电池的接触格与发射极层之间的欧姆接触特性的方法
CN112447882A (zh) * 2019-08-29 2021-03-05 阿聚尔斯佩西太阳能有限责任公司 用于半导体晶片的通孔的钝化方法
CN112447881A (zh) * 2019-08-29 2021-03-05 阿聚尔斯佩西太阳能有限责任公司 用于半导体晶片的贯通开口的保护方法
CN115084283A (zh) * 2021-03-02 2022-09-20 阿聚尔斯佩西太阳能有限责任公司 太阳能电池接触装置
CN115398652A (zh) * 2020-03-30 2022-11-25 株式会社钟化 电池单元集合体、电池单元集合体的制造方法、太阳电池单元、及太阳电池单元的制造方法

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