ES2365679T5 - Células fotovoltaicas que tienen envoltura metálica pasante y pasivación mejorada - Google Patents
Células fotovoltaicas que tienen envoltura metálica pasante y pasivación mejorada Download PDFInfo
- Publication number
- ES2365679T5 ES2365679T5 ES08856838.1T ES08856838T ES2365679T5 ES 2365679 T5 ES2365679 T5 ES 2365679T5 ES 08856838 T ES08856838 T ES 08856838T ES 2365679 T5 ES2365679 T5 ES 2365679T5
- Authority
- ES
- Spain
- Prior art keywords
- layer
- dielectric
- oxide
- semiconductor layer
- passivation
- Prior art date
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- 238000002161 passivation Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 238000009792 diffusion process Methods 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 25
- 239000010703 silicon Substances 0.000 claims description 25
- 229910004205 SiNX Inorganic materials 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 229910052593 corundum Inorganic materials 0.000 claims description 5
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 5
- 229910002056 binary alloy Inorganic materials 0.000 claims description 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 38
- 238000005215 recombination Methods 0.000 abstract description 6
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- 239000010410 layer Substances 0.000 description 179
- 238000000151 deposition Methods 0.000 description 36
- 238000000034 method Methods 0.000 description 33
- 230000008021 deposition Effects 0.000 description 28
- 239000000463 material Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 25
- 238000010411 cooking Methods 0.000 description 23
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- 230000015572 biosynthetic process Effects 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 15
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 238000011282 treatment Methods 0.000 description 9
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- 238000001465 metallisation Methods 0.000 description 7
- 238000007639 printing Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 239000011521 glass Substances 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
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- 239000001257 hydrogen Substances 0.000 description 4
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- 238000000608 laser ablation Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
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- 238000006731 degradation reaction Methods 0.000 description 3
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- 238000001704 evaporation Methods 0.000 description 3
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- 238000011049 filling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
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- 230000035515 penetration Effects 0.000 description 2
- 231100000572 poisoning Toxicity 0.000 description 2
- 230000000607 poisoning effect Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 101100055113 Caenorhabditis elegans aho-3 gene Proteins 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
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- 230000003292 diminished effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 235000010746 mayonnaise Nutrition 0.000 description 1
- 239000008268 mayonnaise Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
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- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
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- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-OUBTZVSYSA-N silicon-29 atom Chemical compound [29Si] XUIMIQQOPSSXEZ-OUBTZVSYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
- H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP07122152 | 2007-12-03 | ||
| EP07122152A EP2068369A1 (en) | 2007-12-03 | 2007-12-03 | Photovoltaic cells having metal wrap through and improved passivation |
| US99229807P | 2007-12-04 | 2007-12-04 | |
| US992298P | 2007-12-04 | ||
| PCT/EP2008/066662 WO2009071561A2 (en) | 2007-12-03 | 2008-12-02 | Photovoltaic cells having metal wrap through and improved passivation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ES2365679T3 ES2365679T3 (es) | 2011-10-10 |
| ES2365679T5 true ES2365679T5 (es) | 2017-02-24 |
Family
ID=39683568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES08856838.1T Active ES2365679T5 (es) | 2007-12-03 | 2008-12-02 | Células fotovoltaicas que tienen envoltura metálica pasante y pasivación mejorada |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9246044B2 (enExample) |
| EP (2) | EP2068369A1 (enExample) |
| JP (1) | JP5416711B2 (enExample) |
| CN (1) | CN101889349A (enExample) |
| AT (1) | ATE511215T1 (enExample) |
| ES (1) | ES2365679T5 (enExample) |
| WO (1) | WO2009071561A2 (enExample) |
Families Citing this family (88)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8481357B2 (en) | 2008-03-08 | 2013-07-09 | Crystal Solar Incorporated | Thin film solar cell with ceramic handling layer |
| KR101573934B1 (ko) * | 2009-03-02 | 2015-12-11 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| KR101627217B1 (ko) * | 2009-03-25 | 2016-06-03 | 엘지전자 주식회사 | 태양전지 및 그 제조방법 |
| KR100984700B1 (ko) | 2009-06-04 | 2010-10-01 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| KR100990110B1 (ko) * | 2009-08-18 | 2010-10-29 | 엘지전자 주식회사 | 태양 전지 |
| DE102009029373A1 (de) * | 2009-09-11 | 2011-04-07 | Carl Zeiss Smt Gmbh | Beschichtungsverfahren für die Mikrolithographie |
| DE102009029374A1 (de) * | 2009-09-11 | 2011-04-07 | Carl Zeiss Smt Gmbh | Beschichtungsverfahren für die Mikrolithographie |
| US20110083735A1 (en) * | 2009-10-13 | 2011-04-14 | Ips Ltd. | Solar cell and method of fabricating the same |
| CN102576764A (zh) * | 2009-10-15 | 2012-07-11 | Lg伊诺特有限公司 | 太阳能电池设备及其制造方法 |
| KR101146734B1 (ko) * | 2009-10-26 | 2012-05-17 | 엘지전자 주식회사 | 태양 전지 셀 및 이를 구비한 태양 전지 모듈 |
| US8115097B2 (en) * | 2009-11-19 | 2012-02-14 | International Business Machines Corporation | Grid-line-free contact for a photovoltaic cell |
| CN102640231A (zh) * | 2009-11-25 | 2012-08-15 | E·I·内穆尔杜邦公司 | 用于形成钝化发射极的银背面电极以及形成背面接触硅太阳能电池的方法 |
| DE102010025983A1 (de) * | 2010-03-03 | 2011-09-08 | Centrotherm Photovoltaics Ag | Solarzelle mit dielektrischer Rückseitenverspiegelung und Verfahren zu deren Herstellung |
| DE102010028187A1 (de) * | 2010-04-26 | 2011-10-27 | Robert Bosch Gmbh | Verfahren zur Herstellung einer Metal-Wrap-Through-Solarzelle sowie eine nach diesem Verfahren hergestellte Metal-Wrap-Through-Solarzelle |
| KR101125435B1 (ko) | 2010-05-07 | 2012-03-27 | 현대중공업 주식회사 | Ｍｗｔ형 태양전지 |
| NL2004698C2 (en) * | 2010-05-11 | 2011-11-15 | Stichting Energie | Solar cell and method of manufacturing such a solar cell. |
| KR101823709B1 (ko) * | 2010-05-11 | 2018-02-01 | 쉬티흐틴크 에네르지온데르조크 센트룸 네델란드 | 태양전지 및 그 태양전지의 제조방법 |
| WO2011145731A1 (ja) * | 2010-05-20 | 2011-11-24 | 京セラ株式会社 | 太陽電池素子およびその製造方法ならびに太陽電池モジュール |
| DE102010026960A1 (de) * | 2010-07-12 | 2012-01-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle und Verfahren zur Herstellung einer photovoltaischen Solarzelle |
| US8883552B2 (en) | 2010-08-11 | 2014-11-11 | Crystal Solar Inc. | MWT architecture for thin SI solar cells |
| NL2005261C2 (en) * | 2010-08-24 | 2012-02-27 | Solland Solar Cells B V | Back contacted photovoltaic cell with an improved shunt resistance. |
| EP2423981B1 (en) * | 2010-08-27 | 2018-11-28 | LG Electronics Inc. | Method of manufacturing solar cell electrodes by paste firing |
| JP5496354B2 (ja) * | 2010-10-05 | 2014-05-21 | 三菱電機株式会社 | 光起電力装置およびその製造方法 |
| WO2012051626A2 (en) * | 2010-10-15 | 2012-04-19 | Nanosolar, Inc. | Solar cell architecture having a plurality of vias with shaped foil via interior |
| DE112010005950T5 (de) * | 2010-10-20 | 2013-08-14 | Mitsubishi Electric Corporation | Photovoltaikvorrichtung und Herstellungsverfahren für diese |
| DE102010060303A1 (de) | 2010-11-02 | 2012-05-03 | Solarworld Innovations Gmbh | Verfahren zum Herstellen einer Solarzelle |
| CN102468365B (zh) * | 2010-11-18 | 2014-07-16 | 台湾茂矽电子股份有限公司 | 双面太阳能电池的制造方法 |
| IT1403828B1 (it) | 2010-12-02 | 2013-10-31 | Applied Materials Italia Srl | Procedimento per la stampa di un substrato |
| KR101699310B1 (ko) * | 2010-12-17 | 2017-02-13 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
| DE102011010077A1 (de) * | 2011-02-01 | 2012-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photovoltaische Solarzelle sowie Verfahren zu deren Herstellung |
| NL2006160C2 (en) * | 2011-02-08 | 2012-08-09 | Tsc Solar B V | A method of manufacturing a solar cell and a solar cell. |
| US20130061918A1 (en) * | 2011-03-03 | 2013-03-14 | E. I. Dupont De Nemours And Company | Process for the formation of a silver back electrode of a passivated emitter and rear contact silicon solar cell |
| WO2012129184A1 (en) | 2011-03-18 | 2012-09-27 | Crystal Solar, Inc. | Insitu epitaxial deposition of front and back junctions in single crystal silicon solar cells |
| CN103430319B (zh) * | 2011-03-31 | 2016-01-20 | 京瓷株式会社 | 太阳能电池元件及太阳能电池模块 |
| CN102157576A (zh) * | 2011-03-31 | 2011-08-17 | 镇江大全太阳能有限公司 | 高效晶体硅太阳能电池结构及其制造方法 |
| CN202196801U (zh) * | 2011-05-27 | 2012-04-18 | 苏州阿特斯阳光电力科技有限公司 | 光电转换装置 |
| US9153713B2 (en) | 2011-04-02 | 2015-10-06 | Csi Cells Co., Ltd | Solar cell modules and methods of manufacturing the same |
| CN102800742B (zh) * | 2011-05-27 | 2016-04-13 | 苏州阿特斯阳光电力科技有限公司 | 背接触晶体硅太阳能电池片制造方法 |
| CN202196784U (zh) * | 2011-05-27 | 2012-04-18 | 苏州阿特斯阳光电力科技有限公司 | 光电转换装置 |
| KR101563412B1 (ko) * | 2011-04-04 | 2015-10-26 | 미쓰비시덴키 가부시키가이샤 | 태양전지 및 그 제조 방법, 태양전지 모듈 |
| DE112012001787A5 (de) | 2011-04-19 | 2014-01-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung einer Solarzelle |
| CN102201460A (zh) * | 2011-05-09 | 2011-09-28 | 马鞍山优异光伏有限公司 | 一种新型的晶体硅太阳能电池及其制备方法 |
| KR101218411B1 (ko) * | 2011-05-25 | 2013-01-21 | 현대중공업 주식회사 | 태양전지 및 그 제조 방법 |
| US9281435B2 (en) | 2011-05-27 | 2016-03-08 | Csi Cells Co., Ltd | Light to current converter devices and methods of manufacturing the same |
| DE102012102745A1 (de) * | 2011-07-29 | 2013-01-31 | Schott Solar Ag | Verfahren zur Herstellung einer Solarzelle sowie Solarzelle |
| US20130192671A1 (en) * | 2011-08-11 | 2013-08-01 | E I Du Pont De Nemours And Company | Conductive metal paste and use thereof |
| DE102011053238A1 (de) | 2011-09-02 | 2013-03-07 | Schott Solar Ag | Verfahren zum Verbinden von Solarzellen sowie Solarzellenmodul |
| US10038109B2 (en) | 2011-09-09 | 2018-07-31 | Heraeus Precious Metals North America Conshohocken Llc | Silver solar cell contacts |
| CN102386249B (zh) * | 2011-10-31 | 2013-08-14 | 北京吉阳技术股份有限公司 | 一种下一代结构高效率晶体硅电池及制作方法 |
| FR2983346B1 (fr) * | 2011-11-25 | 2016-12-09 | Soitec Silicon On Insulator | Procede de prevention d'une panne electrique dans un empilement de couches semi-conductrices, cellule photovoltaïque a concentration a substrat mince, et assemblage de cellule solaire |
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| US20110005582A1 (en) | 2011-01-13 |
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| CN101889349A (zh) | 2010-11-17 |
| WO2009071561A3 (en) | 2009-12-10 |
| EP2215663A2 (en) | 2010-08-11 |
| ATE511215T1 (de) | 2011-06-15 |
| EP2215663B1 (en) | 2011-05-25 |
| WO2009071561A2 (en) | 2009-06-11 |
| JP2011505704A (ja) | 2011-02-24 |
| EP2215663B2 (en) | 2016-08-17 |
| JP5416711B2 (ja) | 2014-02-12 |
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