CN109473493A - 一种mwt异质结硅太阳电池及其制备方法 - Google Patents
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Abstract
本发明公开一种MWT异质结硅太阳电池及其制备方法,MWT异质结硅太阳电池片上打有贯穿TCO透明导电膜,P型非晶硅膜层,本征非晶硅钝化层或者氧化硅钝化层,N型硅基片,本征非晶硅钝化层或者氧化硅钝化层,N型非晶硅膜层,以及TCO透明导电膜的孔洞,孔洞两端分别对应正面金属电极和孔洞金属电极,正面金属电极和孔洞金属电极连通;制备方法在常规异质结电池工艺基础上,增加一道激光打孔和绝缘层覆盖保护两道工序即可实现这种MWT异质结硅太阳电池的生产制造。
Description
技术领域
本发明涉及一种适合规模化量产的MWT异质结硅太阳电池和工艺方法,应用于太阳电池的生产制造。
背景技术
MWT(金属穿透缠绕)技术是一种背接触式太阳电池技术,其通过孔洞金属电极传输的方式将常规电池正面电极移到背面,有效降低了银栅线遮挡而引起的功率损失,提高了入射太阳光的利用率和电池的光电转化效率,基本结构如图1所示。其工艺步骤典型如下:激光打孔、清洗制绒、双面扩散制备pn结、去磷硅玻璃、制备减反射膜、丝网印刷电极、烘干烧结、测试分选。但这种结构和工艺方式只适用于常规P型硅电池,对于N型异质结电池,孔洞截面结构复杂,同时存在P型(正极)和N型(负极)区域,直接的孔洞金属化一定会导致正负电极短路,故需要设计开发一种避免正负极短路,并且简单适合和低成本化的MWT异质结电池结构和工艺,使其适用于规模化生产需要。
发明内容
发明目的:针对现有技术中存在的问题与不足,本发明提供一种增加设备少、工艺简单的MWT异质结硅太阳电池及其制备方法,合低成本、大产能的规模化生产的需求。
技术方案:一种MWT异质结硅太阳电池,包括N型硅基片,N型硅基片正反两面均设有一层本征非晶硅钝化层或者氧化硅钝化层;所述N型硅基片正面的本征非晶硅钝化层或者氧化硅钝化层上设有P型非晶硅膜层,P型非晶硅膜层上设有TCO透明导电膜;所述N型硅基片反面的本征非晶硅钝化层或者氧化硅钝化层上设有N型非晶硅膜层,N型非晶硅膜层上设有TCO透明导电膜;所述MWT异质结硅太阳电池片正面设有正面金属电极,背面设有背面金属电极;
MWT异质结硅太阳电池片上打有贯穿TCO透明导电膜,P型非晶硅膜层,本征非晶硅钝化层或者氧化硅钝化层,N型硅基片,本征非晶硅钝化层或者氧化硅钝化层,N型非晶硅膜层,以及TCO透明导电膜的孔洞,孔洞两端分别对应正面金属电极和孔洞金属电极,正面金属电极和孔洞金属电极连通;
从MWT异质结硅太阳电池片背面的孔洞边缘到孔洞内壁上印刷有绝缘浆料形成的平滑的绝缘膜层,所述孔洞边缘印刷的绝缘膜层外径大于孔洞金属电极点的外径,用于防止孔洞与背面的TCO透明导电膜形成连续通道。
所述绝缘膜层的厚度为1~100um,并且平滑致密,用于防止孔洞与背面的TCO透明导电膜形成连续通道,起到孔洞金属电极和TCO透明导电膜、孔洞内部结构绝缘隔离的作用。
所述孔洞的横截面为圆形、方形或者三角形,直径尺寸为0.05~1mm。
所述本征非晶硅钝化层的厚度为5~50nm,氧化硅钝化层的厚度为1~50nm。
所述P型非晶硅膜层和N型非晶硅膜层的厚度均为5~50nm。
一种MWT异质结硅太阳电池的制备方法,在常规异质结电池工艺基础上,增加一道激光打孔和绝缘层覆盖保护两道工序即可实现这种MWT异质结硅太阳电池的生产制造。具体包括如下步骤:
(1)使用激光器在N型硅基片上打若干个与正面金属电极数量和位置一致的孔洞;
(2)对打孔后的N型硅基片进行前清洗与制绒,去除硅片表面和孔洞内的损伤层,降低光生载流子的复合速率,同时在N型硅基片表面制成绒面降低反射率;
(3)在清洗与制绒后的N型硅基片的正反两面分别沉积一层本征非晶硅钝化膜层或者分别制备一层薄的氧化硅钝化层;一般采用PECVD(等离子增强化学气相沉积)的方法沉积本征非晶硅钝化膜层,本征非晶硅钝化膜层厚度为5~50nm;采用热氧化或者湿化学氧化的方法在N型硅基片上制备氧化硅钝化层,氧化硅钝化层厚度为1~50nm;
(4)接着,采用PECVD的方式在正面的本征非晶硅钝化层或者氧化硅钝化层上沉积p型非晶硅层,在背面本征非晶硅钝化层或者氧化硅钝化层上沉积n型非晶硅层,p型非晶硅层和n型非晶硅层的厚度均为5~50nm;
(5)在p型非晶硅层和n型非晶硅层上分别沉积TCO透明导电膜层,一般采用PVD(物理气相沉积)或者溅射等方式;
(6)从电池片背面孔洞附近印刷绝缘浆料,孔洞附近印刷的绝缘浆料的外径大于孔洞金属电极点的外径,绝缘浆料从孔洞附近沿着孔洞内壁流动,且覆盖孔洞内壁,一般选用环氧树脂胶体系(由环氧树脂胶和固化剂等组成)或者聚醯亚胺浆料体系(由聚醯亚胺粒子和有机溶剂等组成)等,优选的是丝网印刷或者钢网印刷等方式,印刷后可在正面增加一个抽吸工艺,让孔洞内的绝缘浆料均匀分布在侧壁,同时带走过多的中心区域浆料防止堵孔;
(7)在绝缘浆料印刷和烘干后,再采用丝网印刷或者电镀的方法制备正面和背面金属电极以及孔洞金属电极;
(8)烘干或者退火以形成良好的欧姆接触,再进行分析测试完成电池片的制备。
需要说明的是:在步骤(6)的绝缘浆料的选择上面,考虑到后续烘干和退火工艺(一般在200℃左右),该浆料烘干固化后的厚度一般在1~100um,并且平滑致密,不允许有空洞与底部TCO膜形成连续通道,在后续金属电极制备后起到金属电极和TCO膜、孔洞内部结构绝缘隔离的作用。
有益效果:与现有技术相比,本发明提供了一种适合于规模化量产的MWT异质结电池结构及制作工艺,方法简单实用,设备投入和生产成本较低,适合规模化的生产需要。
附图说明
图1是常规MWT电池结构示意图;
11-P型硅基片,12-N型扩散层,13-减反钝化膜,14-铝背场,7-背面金属电极,8-孔洞金属电极,9-正面金属电极;
图2是本发明的MWT异质结电池结构示意图;
1-N型硅基片,2-本征非晶硅钝化层或者氧化硅钝化层,3-P型非晶硅膜层,4-N型非晶硅膜层,5-TCO透明导电膜,6-绝缘膜层,7-背面金属电极,8-孔洞金属电极,9-正面金属电极。
具体实施方式
下面结合具体实施例,进一步阐明本发明,应理解这些实施例仅用于说明本发明而不用于限制本发明的范围,在阅读了本发明之后,本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
如图2所示,MWT异质结硅太阳电池,包括N型硅基片1,N型硅基片1正反两面均设有一层本征非晶硅钝化层或者氧化硅钝化层2;N型硅基片1正面的本征非晶硅钝化层或者氧化硅钝化层2上设有P型非晶硅膜层3,P型非晶硅膜层3上设有TCO透明导电膜5;N型硅基片1反面的本征非晶硅钝化层或者氧化硅钝化层2上设有N型非晶硅膜层4,N型非晶硅膜层4上设有TCO透明导电膜5;MWT异质结硅太阳电池片正面设有正面金属电极9,背面设有背面金属电极7;
MWT异质结硅太阳电池片上打有贯穿TCO透明导电膜5,P型非晶硅膜层3,本征非晶硅钝化层或者氧化硅钝化层2,N型硅基片1,本征非晶硅钝化层或者氧化硅钝化层2,N型非晶硅膜层4,以及TCO透明导电膜5的孔洞,孔洞两端分别对应正面金属电极9和孔洞金属电极8,正面金属电极9和孔洞金属电极8连通;
从MWT异质结硅太阳电池片背面的孔洞边缘到孔洞内壁上印刷有绝缘浆料形成的平滑的绝缘膜层6,所述孔洞边缘印刷的绝缘膜层6外径大于孔洞金属电极8点的外径,用于防止孔洞与背面的TCO透明导电膜5形成连续通道。
绝缘膜层6的厚度为1~100um,并且平滑致密,用于防止孔洞与背面的TCO透明导电膜5形成连续通道,起到孔洞金属电极8和TCO透明导电膜5、孔洞内部结构绝缘隔离的作用。
孔洞的横截面为圆形、方形或者三角形,直径尺寸为0.05~1mm。
本征非晶硅钝化层的厚度为5~50nm,氧化硅钝化层的厚度为1~50nm。
P型非晶硅膜层3和N型非晶硅膜层4的厚度均为5~50nm。
通过2个实施例来描述本发明的MWT异质结硅太阳电池的制备方法:
实施例1
MWT异质结硅太阳电池的制备方法本,包括以下具体步骤:
(1)采用太阳能级N型单晶或者多晶硅片作为衬底;
(2)按照太阳能电池的正面金属电极的设定布局对硅片进行激光开孔,孔洞的横截面形状为圆形,直径为100~500μm;
(3)使用化学溶液对打孔后的硅片表面进行清洗和织构化;
(4)用PECVD的方式在硅片的正反两面制备本征非晶硅钝化膜层,本征非晶硅钝化膜层的厚度为5~20nm;
(5)用PECVD的方式再在沉积本征非晶硅钝化膜层的硅片正、反两面分别制备P型非晶硅薄膜和N型非晶硅薄膜,P型非晶硅薄膜和N型非晶硅薄膜的厚度均为10~20nm;
(6)用PVD的方式在步骤(5)的硅片正、反两面分别制备ITO透明导(TCO透明导电膜中的一种)电膜,形成电池片,ITO透明导电膜的方阻为20~200Ω/□;
(7)采用丝网印刷的方式从电池片背面孔洞附近印刷环氧树脂绝缘胶,孔洞附近印刷的环氧树脂绝缘胶的外径大于孔洞金属电极点的外径,环氧树脂绝缘胶从孔洞附近沿着孔洞内壁流动,且覆盖孔洞内壁,环氧树脂绝缘胶的厚度为5~50um,印刷后在孔洞正面(电池片正面)加上抽吸工艺,吸出多余的绝缘胶防止堵孔,同时让剩余的绝缘胶均匀分布在孔洞内壁;之后再进行烘干固化;
(8)采用丝网印刷的方法印刷孔洞银电极、常规背面电极和正面栅线电极;
(9)在烘干炉中进行烘干和退火。正面和背面电极都形成良好的欧姆接触。
本实施例中采用的N型单晶硅片制备的MWT异质结太阳电池经测试,电池的转换效率达到23%以上。
实施例2
MWT异质结硅太阳电池的制备方法本,包括以下具体步骤:
(1)采用太阳能级N型单晶或者多晶硅片作为衬底;
(2)按照太阳能电池的正面金属电极的设定布局对硅片进行激光开孔,孔洞的横截面形状为圆形,直径为100~500μm;
(3)使用化学溶液对打孔后的硅片表面进行清洗和织构化;
(4)用HNO3溶液或者臭氧紫外氧化的方法在硅片两面进行处理,获得一层薄的致密氧化层,厚度在2~10nm;
(5)用PECVD的方式再在步骤(4)的硅片正、反两面分别制备P型非晶硅薄膜和N型非晶硅薄膜,P型非晶硅薄膜和N型非晶硅薄膜的厚度均为10~20nm;
(6)用PVD的方式在步骤(5)的硅片正、反两面分别制备ITO透明导电膜,形成电池片,ITO透明导电膜的方阻为20~200Ω/□;
(7)采用丝网印刷的方式从电池片背面孔洞附近印刷聚醯亚胺绝缘浆料,孔洞附近印刷的聚醯亚胺绝缘浆料的外径大于孔洞金属电极点的外径,聚醯亚胺绝缘浆料从孔洞附近沿着孔洞内壁流动,且覆盖孔洞内壁,聚醯亚胺绝缘浆料层的厚度为10~100um,印刷后在孔洞正面加上抽吸工艺,吸出多余的聚醯亚胺绝缘浆料防止堵孔,同时让剩余的绝缘浆料均匀分布在孔洞内壁;之后再进行烘干固化;
(8)采用丝网印刷的方法印刷孔洞银电极、常规背面电极和正面栅线电极;
(9)在烘干炉中进行烘干和退火。正面和背面电极都形成良好的欧姆接触。
本实施例中采用的N型单晶硅片制备的MWT异质结太阳电池经测试,电池的转换效率达到23%以上。
Claims (10)
1.一种MWT异质结硅太阳电池,其特征在于:包括N型硅基片,N型硅基片正反两面均设有一层本征非晶硅钝化层或者氧化硅钝化层;所述N型硅基片正面的本征非晶硅钝化层或者氧化硅钝化层上设有P型非晶硅膜层,P型非晶硅膜层上设有TCO透明导电膜;所述N型硅基片反面的本征非晶硅钝化层或者氧化硅钝化层上设有N型非晶硅膜层,N型非晶硅膜层上设有TCO透明导电膜;所述MWT异质结硅太阳电池片正面设有正面金属电极,背面设有背面金属电极;
MWT异质结硅太阳电池片上打有贯穿TCO透明导电膜,P型非晶硅膜层,本征非晶硅钝化层或者氧化硅钝化层,N型硅基片,本征非晶硅钝化层或者氧化硅钝化层,N型非晶硅膜层,以及TCO透明导电膜的孔洞,孔洞两端分别对应正面金属电极和孔洞金属电极,正面金属电极和孔洞金属电极连通;
从MWT异质结硅太阳电池片背面的孔洞边缘到孔洞内壁上印刷有绝缘浆料形成的平滑的绝缘膜层,所述孔洞边缘印刷的绝缘膜层外径大于孔洞金属电极点的外径,用于防止孔洞与背面的TCO透明导电膜形成连续通道。
2.如权利要求1所述的MWT异质结硅太阳电池,其特征在于:所述绝缘膜层的厚度为1~100um。
3.如权利要求1所述的MWT异质结硅太阳电池,其特征在于:所述孔洞的横截面为圆形、方形或者三角形,直径尺寸为0.05~1mm。
4.如权利要求1所述的MWT异质结硅太阳电池,其特征在于:所述本征非晶硅钝化层的厚度为5~50nm,氧化硅钝化层的厚度为1~50nm。
5.如权利要求1所述的MWT异质结硅太阳电池,其特征在于:所述P型非晶硅膜层和N型非晶硅膜层的厚度均为5~50nm。
6.一种MWT异质结硅太阳电池的制备方法,其特征在于,包括如下步骤:
(1)使用激光器在N型硅基片上打若干个与正面金属电极数量和位置一致的孔洞;
(2)对打孔后的N型硅基片进行前清洗与制绒;
(3)在清洗与制绒后的N型硅基片的正反两面分别沉积一层本征非晶硅钝化膜层或者分别制备一层薄的氧化硅钝化层;
(4)接着,在正面的本征非晶硅钝化层或者氧化硅钝化层上沉积p型非晶硅层,在背面本征非晶硅钝化层或者氧化硅钝化层上沉积n型非晶硅层;
(5)在p型非晶硅层和n型非晶硅层上分别沉积TCO透明导电膜层;
(6)从电池片背面孔洞附近印刷绝缘浆料,孔洞附近印刷的绝缘浆料的外径大于孔洞金属电极点的外径,绝缘浆料从孔洞附近沿着孔洞内壁流动,且覆盖孔洞内壁;
(7)在绝缘浆料印刷和烘干后,再采用丝网印刷或者电镀的方法制备正面和背面金属电极以及孔洞金属电极;
(8)对电池片进行烘干或者退火,再进行分析测试完成电池片的制备。
7.如权利要求6所述的MWT异质结硅太阳电池的制备方法,其特征在于,所述步骤(6)的绝缘浆料烘干固化后的厚度为1~100um。
8.如权利要求6所述的MWT异质结硅太阳电池的制备方法,其特征在于,所述步骤(6)印刷绝缘浆料后,在电池片正面的孔洞加上抽吸工艺,吸出多余的绝缘浆料防止堵孔,同时便于剩余的绝缘浆料均匀分布在孔洞内壁,抽吸之后再进行烘干固化。
9.如权利要求6所述的MWT异质结硅太阳电池的制备方法,其特征在于,采用PECVD的方法沉积本征非晶硅钝化膜层,本征非晶硅钝化膜层厚度为5~50nm;采用热氧化或者湿化学氧化的方法在N型硅基片上制备氧化硅钝化层,氧化硅钝化层厚度为1~50nm。
10.如权利要求6所述的MWT异质结硅太阳电池的制备方法,其特征在于,步骤(4)中,采用PECVD的方式在正面的本征非晶硅钝化层或者氧化硅钝化层上沉积p型非晶硅层,在背面本征非晶硅钝化层或者氧化硅钝化层上沉积n型非晶硅层,p型非晶硅层和n型非晶硅层的厚度均为5~50nm。
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112599632A (zh) * | 2020-11-25 | 2021-04-02 | 无锡日托光伏科技有限公司 | 一种mwt电池制备方法及mwt电池 |
CN114678434A (zh) * | 2021-12-28 | 2022-06-28 | 浙江爱旭太阳能科技有限公司 | 一种提高光电转换效率的异质结电池 |
US20220310854A1 (en) * | 2021-03-02 | 2022-09-29 | Azur Space Solar Power Gmbh | Solar cell contact arrangement |
CN115347056A (zh) * | 2022-10-19 | 2022-11-15 | 北京晶澳太阳能光伏科技有限公司 | 太阳能电池 |
WO2024098999A1 (zh) * | 2022-11-11 | 2024-05-16 | 通威太阳能(金堂)有限公司 | 太阳电池及其制备方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101889349A (zh) * | 2007-12-03 | 2010-11-17 | Imec公司 | 包括金属覆盖穿通以及改进的钝化的光生伏打电池 |
CN102986035A (zh) * | 2010-05-11 | 2013-03-20 | 荷兰能源建设基金中心 | 太阳能电池及其制造方法 |
CN107946382A (zh) * | 2017-11-16 | 2018-04-20 | 南京日托光伏科技股份有限公司 | Mwt与hit结合的太阳能电池及其制备方法 |
CN108054220A (zh) * | 2017-12-12 | 2018-05-18 | 浙江晶盛机电股份有限公司 | 一种硅异质结太阳能电池及其制备方法 |
CN209056507U (zh) * | 2018-12-20 | 2019-07-02 | 江苏日托光伏科技股份有限公司 | 一种mwt异质结硅太阳电池 |
-
2018
- 2018-12-20 CN CN201811590639.4A patent/CN109473493A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101889349A (zh) * | 2007-12-03 | 2010-11-17 | Imec公司 | 包括金属覆盖穿通以及改进的钝化的光生伏打电池 |
CN102986035A (zh) * | 2010-05-11 | 2013-03-20 | 荷兰能源建设基金中心 | 太阳能电池及其制造方法 |
CN107946382A (zh) * | 2017-11-16 | 2018-04-20 | 南京日托光伏科技股份有限公司 | Mwt与hit结合的太阳能电池及其制备方法 |
CN108054220A (zh) * | 2017-12-12 | 2018-05-18 | 浙江晶盛机电股份有限公司 | 一种硅异质结太阳能电池及其制备方法 |
CN209056507U (zh) * | 2018-12-20 | 2019-07-02 | 江苏日托光伏科技股份有限公司 | 一种mwt异质结硅太阳电池 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112599632A (zh) * | 2020-11-25 | 2021-04-02 | 无锡日托光伏科技有限公司 | 一种mwt电池制备方法及mwt电池 |
US20220310854A1 (en) * | 2021-03-02 | 2022-09-29 | Azur Space Solar Power Gmbh | Solar cell contact arrangement |
CN114678434A (zh) * | 2021-12-28 | 2022-06-28 | 浙江爱旭太阳能科技有限公司 | 一种提高光电转换效率的异质结电池 |
CN114678434B (zh) * | 2021-12-28 | 2024-05-10 | 浙江爱旭太阳能科技有限公司 | 一种提高光电转换效率的异质结电池 |
CN115347056A (zh) * | 2022-10-19 | 2022-11-15 | 北京晶澳太阳能光伏科技有限公司 | 太阳能电池 |
WO2024098999A1 (zh) * | 2022-11-11 | 2024-05-16 | 通威太阳能(金堂)有限公司 | 太阳电池及其制备方法 |
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