WO2019128072A1 - 一种低成本mwt硅太阳能电池及其制备方法 - Google Patents

一种低成本mwt硅太阳能电池及其制备方法 Download PDF

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WO2019128072A1
WO2019128072A1 PCT/CN2018/088320 CN2018088320W WO2019128072A1 WO 2019128072 A1 WO2019128072 A1 WO 2019128072A1 CN 2018088320 W CN2018088320 W CN 2018088320W WO 2019128072 A1 WO2019128072 A1 WO 2019128072A1
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electrode
silicon wafer
silicon
cost
solar cell
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French (fr)
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李质磊
安欣睿
逯好峰
吴仕梁
路忠林
盛雯婷
张凤鸣
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江苏日托光伏科技股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • the invention relates to a silicon solar cell, in particular to a low-cost MWT silicon solar cell and a preparation method thereof.
  • the high-efficiency technologies of crystalline silicon solar cells mainly include heterojunction solar cells (HIT), full back electrode contact silicon solar cells (IBC), emitter surround through silicon solar cells (EWT), laser grooved buried gate cells, tilt Evaporated metal contact silicon solar cells (OECO) and metal perforated wound silicon solar cells (MWT), etc., which are increasingly used due to their high efficiency, low cost, small shading area and better appearance.
  • HIT heterojunction solar cells
  • IBC full back electrode contact silicon solar cells
  • EWT emitter surround through silicon solar cells
  • OFECO tilt Evaporated metal contact silicon solar cells
  • MTT metal perforated wound silicon solar cells
  • MWT silicon solar cells transfer the positively collected carriers through the battery to the back of the battery through laser drilling, and reduce the shading area to achieve the conversion efficiency.
  • the conventional battery process is generally followed, and the positive and negative electrode printing is performed after the plating, and then the ohmic contact between the electrode and the base silicon wafer is formed by sintering.
  • the silver paste needs to penetrate the silicon nitride film.
  • a glass body containing a lead oxide component is generally used for this purpose, and silver is a precious metal, and the price is also higher and higher. This is the main reason for the high cost of the front electrode paste, and the glass body containing the lead component also challenges the environment.
  • the present invention provides a cost-reducing MWT silicon solar cell and a method of fabricating the same.
  • the low-cost MWT silicon solar cell of the present invention comprises a silicon wafer, a front gate electrode disposed on a front surface of the silicon wafer, an anti-reflection film covering the front gate electrode and the front surface of the silicon wafer, and a rear surface of the silicon wafer
  • the aluminum back field, the silicon wafer is provided with a plurality of through holes, the holes are filled with the filling metal electrodes, the top of the filling metal electrodes is covered with the front metal electrodes, the bottom is provided with the back metal electrodes, the front grid lines electrodes and the front metal electrodes Connected.
  • the anti-reflection film is a silicon nitride anti-reflection film.
  • the front gate line electrode is prepared from a non-penetrating paste.
  • the non-penetrating slurry can not penetrate the anti-reflection slurry.
  • the commonly used positive electrode has a penetrating slurry composition of 70-85% silver (mass fraction), organic carrier 8-12%, and vitreous body 3 %-5%, in which the vitreous composition (lead oxide) determines whether or not to penetrate silicon nitride, and the non-penetrating slurry can be prepared by conventional commercial products or artificially prepared.
  • Non-penetrating slurry can be copper paste (such as BASF NO1 slurry) or low silver content (such as silver content 30-40%, 40-50%, etc.), silver paste that does not penetrate the anti-reflection film, such as Shuohe 530G -T2, other pastes may also be used, and this application does not rely on a particular type of slurry product.
  • copper paste such as BASF NO1 slurry
  • low silver content such as silver content 30-40%, 40-50%, etc.
  • silver paste that does not penetrate the anti-reflection film such as Shuohe 530G -T2
  • other pastes may also be used, and this application does not rely on a particular type of slurry product.
  • the preparation method of the low-cost MWT silicon solar cell of the invention comprises:
  • a mask for etching and masking is prepared on the back surface of the silicon wafer
  • etching removing excess PN junction on the edge and back of the silicon wafer by using a chemical liquid; removing the mask paste; removing the phosphosilicate glass;
  • Positive electrode preparation preparing a positive electrode on the front surface of the silicon wafer
  • Coating preparing an anti-reflection film, the anti-reflection film covers the positive electrode and the front surface of the silicon wafer;
  • Back electrode and aluminum back field preparation preparing a back electrode and an aluminum back field on the back surface of the silicon wafer
  • the positive electrode is prepared by screen printing, electroplating, electroless plating or spraying.
  • the sintering temperature is 500 to 700 °C.
  • the positive electrode slurry needs to penetrate the silicon nitride anti-reflection film to form an ohmic contact.
  • a lead-containing vitreous component resulting in the cost of the positive electrode silver paste. It is high and poses challenges to environmental protection.
  • the invention adopts a non-penetrating slurry such as an inexpensive copper paste or a low silver paste to replace expensive silver as an electrode material by screen printing, electroplating, electroless plating or spraying, and is prepared before the antireflection film is prepared by a coating process.
  • the front electrode is then normally plated with anti-reflection film, the back electrode and the aluminum back field are printed, and the electrode and BSF are formed by co-firing.
  • the present invention can effectively reduce the cost of the process of the crystalline silicon cell.
  • This application first prepares a positive electrode and then coats the film.
  • the front electrode does not need to penetrate the silicon nitride anti-reflection film, so that the material of the front electrode has more selectivity, and an inexpensive copper paste or a low silver paste can be used.
  • the penetrating slurry replaces the existing expensive silver paste as a raw material for the front electrode, which greatly reduces the production cost of the crystalline silicon.
  • the sintering temperature can be lowered to below 700°, which can effectively reduce or even avoid the degradation of electrical properties caused by B-O in the P-type base silicon. At the same time, a low sintering temperature will reduce energy consumption and thus reduce costs.
  • FIG. 1 is a schematic structural view of an embodiment 1 MWT silicon solar cell
  • Example 2 is a process route for the preparation of the MWT silicon solar cell of Example 1.
  • the structure of the MWT silicon solar cell of the present embodiment is as shown in FIG. 1 , and includes a silicon wafer 1 , a front gate line electrode (or positive electrode) 2 disposed on the front surface (ie, the light receiving surface) of the silicon wafer 1 , and covering the front gate line electrode And the anti-reflection film 3 on the front side of the silicon wafer and the aluminum back field 4 disposed on the back surface of the silicon wafer, the silicon wafer is provided with a plurality of through holes, the holes are filled with the filling metal electrode 5, and the top of the filling metal electrode 5 is covered with the front surface
  • the metal electrode 6 is provided with a back metal electrode (or a back electrode, a negative electrode) 7 at the bottom, and the front gate electrode 2 is in communication with the front metal electrode 6.
  • This embodiment provides a method for preparing a MWT silicon solar cell, as shown in FIG. 2,
  • silicon wafer using a solar grade P-type single crystal or polycrystalline silicon wafer as a substrate;
  • Laser drilling laser opening on the silicon wafer, the hole is an array of N ⁇ N, the shape of the hole is center, square or cone; etc.; a better choice, the aperture of laser drilling is 100-400 ⁇ m ;
  • Mask On the back surface of the silicon wafer (centered with perforated holes), prepare a diameter of 1-10 mm (for example, diameters of 1, 2, 4, 8, 10 mm) and a thickness of 1-50 ⁇ m (for example, thickness 25 ⁇ m) A circular organic mask (such as a parafilm) prepared by screen printing or inkjet printing.
  • a diameter of 1-10 mm for example, diameters of 1, 2, 4, 8, 10 mm
  • a thickness of 1-50 ⁇ m for example, thickness 25 ⁇ m
  • a circular organic mask (such as a parafilm) prepared by screen printing or inkjet printing.
  • Etching is performed using a chemical solution to remove excess PN junctions around the silicon wafer and the back surface, and the organic mask is cleaned to remove the phosphorus-silicon glass on the surface of the diffused silicon substrate.
  • a positive electrode is prepared on the diffusion surface of the silicon wafer (ie, the front surface of the silicon wafer) by screen printing (or electroplating, electroless plating, spraying, etc.), and then dried.
  • a silicon nitride anti-reflection film was prepared using a PECVD apparatus, and the anti-reflection film covered the positive electrode and the diffusion surface.

Abstract

一种低成本MWT硅太阳能电池及其制备方法。该低成本MWT硅太阳能电池包括硅片（1），设于硅片正面的正面栅线电极（2），覆于正面栅线电极及硅片正面的减反膜（3）以及设于硅片背面的铝背场（4），硅片开设有多个贯穿孔，孔内填充有灌孔金属电极（5），灌孔金属电极的顶部覆盖有正面金属电极（6），底部设有背面金属电极（7），正面栅线电极与正面金属电极相连通。该制备方法包括：激光打孔；制绒；扩散；掩膜；刻蚀；正电极制备；镀膜；背电极及铝背场制备；烧结。该制备方法能大幅降低晶硅制备成本。由于正面电极不用穿透氮化硅膜，烧结温度可以降低到700°以下，可以有效降低甚至避免因P型基体硅中的B-O引起的电性能衰减，且降低能耗。

Description

一种低成本MWT硅太阳能电池及其制备方法 技术领域
本发明涉及硅太阳能电池，尤其涉及一种低成本MWT硅太阳能电池及其制备方法。
背景技术
目前，晶体硅太阳能电池的高效技术主要包括异质结太阳能电池(HIT)，全背电极接触硅太阳能电池(IBC)，发射极环绕穿通硅太阳能电池(EWT)，激光刻槽埋栅电池，倾斜蒸发金属接触硅太阳能电池(OECO)及金属穿孔卷绕硅太阳能电池(MWT)等，其中MWT电池因其效率高、成本低、遮光面积小以及更好的外观特点得到越来越多的应用。
MWT硅太阳能电池是通过激光钻孔将正面收集的载流子穿过电池转移至电池背面，并且以减少遮光面积来达到提高转换效率的目的。
现有技术在制备MWT太阳能电池时，一般沿用常规电池工艺流程，在镀膜后做正负电极印刷，然后经过烧结形成电极与基体硅片的欧姆接触。现有技术在制备正电极与基体硅形成欧姆接触时，银浆需要穿透氮化硅薄膜，目前一般采用含有氧化铅成分的玻璃体达到此目的，而且银是贵金属，价格也越来越高。这是导致正面电极浆料成本居高不下的主要原因，同时含铅成分的玻璃体也对环境提出挑战。
发明内容
发明目的：为解决现有技术中的问题，本发明提供了一种降低成本的MWT硅太阳能电池及其制备方法。
技术方案：本发明所述的低成本MWT硅太阳能电池，包括硅片，设于硅片正面的正面栅线电极，覆于正面栅线电极及硅片正面的减反膜以及设于硅片背面的铝背场，硅片开设有多个贯穿孔，孔内填充有灌孔金属电极，灌孔金属电极的顶部覆盖有正面金属电极，底部设有背面金属电极，正面栅线电极与正面金属电极相连通。
所述减反膜为氮化硅减反膜。
优选的,所述正面栅线电极由非穿透型浆料制备。非穿透型浆料即不能穿透减反膜的浆料，目前常用的正电极的穿透型浆料成分70-85％为银(质量分数)，有机载体8-12％，玻璃体为3％-5％，其中玻璃体组成(氧化铅)决定了是否穿透氮化硅，非穿透型浆料可采用目前常规的市售产品或人工配制。非穿透浆料可采用铜浆(例如巴斯夫NO1浆料)或低银含量(如银含量30～40％，40～50％等)、 不穿透减反膜的银浆，如硕禾530G-T2，也可以采用其他的浆料，本申请并不依赖特定型号的浆料产品。
本发明所述的低成本MWT硅太阳能电池的制备方法，包括：
(1)激光打孔：通过激光在硅片上制备孔洞；
(2)制绒：在硅片上制绒，形成光陷阱表面；
(3)扩散：使用扩散源在绒面上扩散掺杂形成PN结；
(4)掩膜：在硅片背表面制备起刻蚀掩蔽作用的掩膜；
(5)刻蚀：利用化学药液去除硅片边缘及背面多余的PN结；去除掩膜浆料；去除磷硅玻璃；
(6)正电极制备：在硅片正表面制备正电极；
(7)镀膜：制备减反膜，减反膜覆盖正电极及硅片正表面；
(8)背电极及铝背场制备：在硅片背表面制备背电极及铝背场；
(9)烧结：共烧结形成正面电极欧姆接触及形成背电场。
正电极采用丝网印刷、电镀、化学镀或喷涂的方法进行制备。
所述烧结的温度为500～700℃。
现有技术中正电极浆料需穿透氮化硅减反膜形成欧姆接触，除了必须使用银粉且对银粉的品质要求很高以外，需采用含铅的玻璃体成分，导致正电极银浆的成本居高不下，而且对环保亦提出挑战。本发明通过丝网印刷、电镀、化学镀或喷涂等方式，采用廉价的铜浆、低银浆料等非穿透型浆料取代昂贵的银作为电极材料，在镀膜工序制备减反膜之前制备正面电极，然后正常镀减反膜，印刷背面电极及铝背场，共烧烧结形成电极及BSF。由此，本发明可以有效降低晶硅电池制程的成本。
与现有技术相比，本发明的有益效果为：
(1)本申请先制备正电极,再镀膜,正面电极不用穿透氮化硅减反膜，使得正面电极的材料有更多的选择性,可采用廉价的铜浆、低银浆料等非穿透型浆料取代现有昂贵的银浆做正面电极原料，大幅降低晶硅制备成本。
(2)由于正面电极不用穿透氮化硅减反膜，烧结温度可以降低到700°以下，可以有效降低甚至避免因P型基体硅中的B-O引起的电性能衰减。同时，低的烧结温度将降低能耗，从而降低成本。
(3)制程未引入额外的工序，且兼容电镀、喷涂等新型电极制备技术。
附图说明
图1为实施例1MWT硅太阳能电池的结构示意图；
图2为实施例1MWT硅太阳能电池制备工艺路线。
具体实施方式
下面结合具体实施例，进一步阐明本发明，应理解这些实施例仅用于说明本发明而不用于限制本发明的范围，在阅读了本发明之后，本领域技术人员对本发明的各种等价形式的修改均落于本申请所附权利要求所限定的范围。
实施例1
本实施例MWT硅太阳能电池的结构如图1所示，包括硅片1，设于硅片1正面(即受光面)的正面栅线电极(或称正电极)2，覆于正面栅线电极及硅片正面的减反膜3以及设于硅片背面的铝背场4，硅片开设有多个贯穿孔，孔内填充有灌孔金属电极5，灌孔金属电极5的顶部覆盖有正面金属电极6，底部设有背面金属电极(或称背电极、负极)7，正面栅线电极2与正面金属电极6相连通。
本实施例提供一种MWT硅太阳能电池制备方法，如图2所示，
(1)硅片：采用太阳能级P型单晶或多晶硅片作为衬底；
(2)激光打孔：在硅片上激光开孔，孔洞为N×N的阵列，孔洞形状为圆心、方形或锥形等；一种较好的选择，激光打孔的孔径在100-400μm；
(3)制绒：使用常规化学清洗和织构化方法进行制绒，形成光陷阱表面；
(4)扩散：在绒面上使用POCl 3扩散源进行高温单面扩散，形成PN结；
(5)掩膜：在硅片背表面(以打孔的孔洞为圆心)，制备直径1-10mm(例如直径为1、2、4、8、10mm)、厚度1-50μm(例如厚度25μm)的圆形有机掩膜(如石蜡膜)，制备方法为丝网印刷或喷墨打印法。
(6)刻蚀：使用化学溶液进行刻蚀，去除硅片周边及背面多余的PN结，清洗有机掩膜，去除扩散后硅衬底表面的磷硅玻璃。
(7)正电极制备：采用铜浆，通过丝网印刷方式(或电镀、化学镀、喷涂等方式)在硅片扩散面(即硅片正表面)制备正电极，然后烘干。
(8)镀膜：使用PECVD设备制备氮化硅减反膜，减反膜覆盖正电极及扩散面。
(9)背电极及铝背场印刷：采用丝网印刷的方法印刷背电极和铝电场。
(10)烧结：在链式炉中进行烘干和烧结(烧结温度为650-700℃)，形成正面电极欧姆接触及形成背电场。

Claims (7)

  1. 一种低成本MWT硅太阳能电池，其特征在于，包括硅片(1)，设于硅片(1)正面的正面栅线电极(2)，覆于正面栅线电极及硅片正面的减反膜(3)以及设于硅片背面的铝背场(4)，硅片开设有多个贯穿孔，孔内填充有灌孔金属电极(5)，灌孔金属电极(5)的顶部覆盖有正面金属电极(6)，底部设有背面金属电极(7)，正面栅线电极(2)与正面金属电极(6)相连通。
  2. 根据权利要求1所述的低成本MWT硅太阳能电池，其特征在于，减反膜为氮化硅减反膜。
  3. 根据权利要求1所述的低成本MWT硅太阳能电池，其特征在于，正面栅线电极由非穿透型浆料制备。
  4. 根据权利要求3所述的低成本MWT硅太阳能电池，其特征在于，所述非穿透型浆料为铜浆或不能穿透减反膜的银浆。
  5. 根据权利要求1～4任一项所述的低成本MWT硅太阳能电池的制备方法，其特征在于，包括：
    (1)激光打孔：通过激光在硅片上制备孔洞；
    (2)制绒：在硅片上制绒，形成光陷阱表面；
    (3)扩散：使用扩散源在绒面上扩散掺杂形成PN结；
    (4)掩膜：在硅片背表面制备起刻蚀掩蔽作用的掩膜；
    (5)刻蚀：利用化学药液去除硅片边缘及背面多余的PN结；去除掩膜浆料；去除磷硅玻璃；
    (6)正电极制备：在硅片正表面制备正电极；
    (7)镀膜：制备减反膜，减反膜覆盖正电极及硅片正表面；
    (8)背电极及铝背场制备：在硅片背表面制备背电极及铝背场；
    (9)烧结：共烧结形成正面电极欧姆接触及形成背电场。
  6. 根据权利要求5所述的低成本MWT硅太阳能电池的制备方法，其特征在于，正电极采用丝网印刷、电镀、化学镀或喷涂的方法进行制备。
  7. 根据权利要求1所述的低成本MWT硅太阳能电池的制备方法，其特征在于，所述烧结的温度为500～700℃。
PCT/CN2018/088320 2017-12-27 2018-05-25 一种低成本mwt硅太阳能电池及其制备方法 WO2019128072A1 (zh)

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