CN105514206B - 全背型异质结太阳电池及其制备方法 - Google Patents
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Abstract
本发明公开了一种全背型异质结太阳电池，包括硅基体层，其特征在于：在硅基体层的前表面依次设置前N型表面场和减反层，在硅基体层的背表面设置本征非晶硅钝化层，在本征非晶硅钝化层上间隔地设置有P型非晶硅层和N型非晶硅层，P型非晶硅层和N型非晶硅层上分别设置有透明导电薄膜层，透明导电薄膜层上设置有电极，所述P型非晶硅层的厚度为5‑20nm，宽度为100‑1000μm，N型非晶硅层的厚度为5‑20nm，宽度为100‑1000μm，相邻的P型非晶硅层的中心点与N型非晶硅层的中心点间隔150‑3000μm，在所述P型非晶硅层与N型非晶硅层之间设置有绝缘隔离层。本发明还公开了一种全背型异质结太阳电池的制备方法。本发明可防止漏电流的产生，提升太阳电池的开路电压。
Description
技术领域
本发明涉及一种太阳电池及其制备方法，尤其涉及一种全背型异质结太阳电池及其制备方法，属于太阳电池生产技术领域。
背景技术
近年来，异质结电池的光电性能已经得到了很大的提高，转换效率也达到了24.7％。为进一步提升传统异质结电池效率，人们对异质结电池的结构进行了进一步的改进，出现了全背面电极结构的异质结电池，这样可以去除栅线对太阳光的遮挡，增加对入射光的吸收效率。目前，这种全背型异质结太阳电池最高效率已经达到了25.6％。但是，制备这种结构的太阳电池，需要对整个工艺过程进行严格的控制，电池背面的p-n结的p区和n区很容易导通，形成漏电流，导致开路电压和短路电流的降低，进而使得整体电池的转换效率降低。
发明内容
本发明针对现有技术中，全背型异质结太阳电池背面p-n结的p区和n区很容易导通，形成漏电流的技术问题，提供一种全背型异质结太阳电池，p区和n区有效隔离，防止漏电流的产生，提升太阳电池的开路电压；本发明的另一方面，还提供一种上述太阳电池的制备工艺。
为此，本发明采用如下技术方案：
一种全背型异质结太阳电池，包括硅基体层，其特征在于：在硅基体层(1)的前表面依次设置N型前表面场(2)和减反层(3)，在硅基体层(1)的背表面设置本征非晶硅钝化层(4)，在本征非晶硅钝化层(4)上间隔地设置有P型非晶硅层(5)和N型非晶硅层(6)，P型非晶硅层(5)和N型非晶硅层(6)上分别设置有透明导电薄膜层(7)，透明导电薄膜层(7)上设置有电极，所述P型非晶硅层(5)的厚度为5-20nm，宽度为100-1000μm，N型非晶硅层(6)的厚度为5-20nm，宽度为100-1000μm，相邻的P型非晶硅层(5)的中心点与N型非晶硅层(6)的中心点间隔150-3000μm，在所述P型非晶硅层(5)与N型非晶硅层(6)之间设置有绝缘隔离层(8)，所述绝缘隔离层(8)的厚度为60-200nm，所述透明导电薄膜层(7)的厚度为60-200nm，宽度为100-1000μm。
进一步地，所述绝缘隔离层(8)采用二氧化硅、氮化硅、氧化铝的一种或多种的组合。
进一步地，所述本征非晶硅钝化层(4)的厚度为3-15nm。
进一步地，所述电极为银栅线(9)，银栅线(9)的宽度40-100μm。
本发明的另一方面，提供种一种全背型异质结太阳电池的制备方法，包括如下步骤：
S1：提供一硅片作为硅基体层(1)；
S2：对硅基体层(1)进行标准RCA清洗，之后采用HF处理，形成清洁表面，去离子水冲刷后吹干；
S3：将硅基体层(1)置入扩散炉中，在基体层的表面形成二氧化硅保护层；
S4：单面去除二氧化硅保护层，通过单面制绒工艺，在基体层的前表面形成金字塔结构，随后进行标准RCA清洗；
S5：通过扩散工艺在金字塔结构上形成N型前表面场(2)；
S6：去除PSG，在前表面场上沉积氮化硅减反层(3)，厚度约80nm；
S7：通过湿法工艺，去除基体层(1)背面的二氧化硅保护层，经过标准RCA清洗工艺及HF处理，形成清洁的背表面；
S8：通过CVD技术，在背表面沉积本征非晶硅钝化层(4)，厚度为3-15nm；
S9：通过印刷工艺，涂布胶水，固化，形成所需的图形，沉积p型非晶硅层(5)和透明导电薄膜(TCO)层(7)；溶剂除去固化后的胶水，通过印刷工艺，涂布胶水，固化，形成所需的图形，沉积n型非晶硅层(6)和透明导电薄膜(TCO)层(7)；
S10：通过印刷工艺，涂布胶水，固化，形成所需的图形，在p型非晶硅层和n型非晶硅层和透明导电薄膜(TCO)层之间沉积绝缘隔离层(8)；
S11：通过丝网印刷工艺，经低温烧结，形成银栅电极，完成本发明的全背型异质结太阳电池的制备。
所述P型非晶硅层(5)的厚度为5-20nm，宽度为100-1000μm，N型非晶硅层(6)的厚度为5-20nm，宽度为100-1000μm，P型非晶硅层(5)的中心点与N型非晶硅层(6)的中心点间隔150-3000μm，所述透明导电薄膜层(7)的厚度为60-200nm，宽度为100-1000μm。
进一步地，所述绝缘隔离层(8)采用二氧化硅、氮化硅、氧化铝的一种或多种的组合，绝缘隔离层(8)的厚度为60-200nm。
进一步地，所述银栅电极的银栅线(9)的宽度40-100μm。
本发明的全背型异质结太阳电池，通过在电池的p区和n区之间设置绝缘隔离层，对p区和n区进行了有效的绝缘隔离，可以很好的阻止由于p区和n区的导通可能导致的漏电流，从而提升电池的开路电压。同时，通过调控该绝缘隔离层的厚度，可以实现对到达背面的光起到反射作用，进一步提升对入射光的利用，提升电池的短路电流，从而最终提升电池的效率。本发明中绝缘隔离层的的沉积，可以使用晶硅电池中常规的CVD设备进行沉积氮化硅，二氧化硅，氧化铝等绝缘材料，工艺简单，重复性好。
附图说明
图1为本发明全背型异质结太阳电池的结构示意图；
图2为本发明的制备方法的工艺流程图；
图中，1为硅基体层，2为N型前表面场，3为减反层，4为本征非晶硅钝化层，5为P型非晶硅层，6为N型非晶硅层，7为透明导电薄膜层，8为绝缘隔离层，9为银栅线。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合附图对本发明的技术方案进行清楚、完整的描述，本发明中与现有技术相同的部分将参考现有技术。
实施例1：
如图1所示，本发明的全背型异质结太阳电池，包括硅基体层1，在硅基体层1的前表面依次设置N型前表面场2和减反层3，在硅基体层1的背表面设置本征非晶硅钝化层4，在本征非晶硅钝化层4上间隔地设置有P型非晶硅层5和N型非晶硅层6，P型非晶硅层5和N型非晶硅层6上分别设置有透明导电薄膜层7，透明导电薄膜层7上设置有电极，所述P型非晶硅层5的厚度为5-20nm，宽度为100-1000μm，N型非晶硅层6的厚度为5-20nm，宽度为100-1000μm，P型非晶硅层5的中心点与N型非晶硅层6的中心点间隔150-3000μm，本征非晶硅钝化层4的厚度为3-15nm，透明导电薄膜层7的厚度为60-200nm，宽度为100-1000μm。在所述P型非晶硅层5与N型非晶硅层6之间设置有绝缘隔离层8。绝缘隔离层8可以采用二氧化硅、氮化硅、氧化铝等绝缘材料的一种或多种的组合，但并不在此限，绝缘隔离层(8)的厚度为60-200nm。所述电极为银栅线9，银栅线9的宽度40-100μm。
实施例2：
如图2所示，以n型硅衬底为例，本发明的全背型异质结太阳电池的制备方法，包括如下步骤：
S1：提供一硅片作为硅基体层1；
S2：对硅基体层1进行标准RCA清洗，之后采用HF处理，形成清洁表面，去离子水冲刷后吹干；
S3：将硅基体层1置入扩散炉中，在基体层的表面形成二氧化硅保护层，保护硅片表面；
S4：单面去除二氧化硅保护层，通过单面制绒工艺，在硅基体层1的前表面形成金字塔结构，随后进行标准RCA清洗；
S5：通过扩散工艺在金字塔结构上形成N型前表面场2；
S6：去除PSG，在前表面场上沉积氮化硅减反层3，厚度约80nm；
S7：通过湿法工艺，去除硅基体层1背面的二氧化硅保护层，经过标准RCA清洗工艺及HF处理，形成清洁的背表面；
S8：通过CVD技术，在背表面沉积本征非晶硅薄膜4，厚度约为5纳米；
S9：通过印刷工艺，涂布胶水，固化，形成所需的图形，沉积p型非晶硅层5和透明导电薄膜(TCO)层7，其中，p型非晶硅层5的厚度为10纳米，透明导电薄膜层7的厚度为100纳米，p型非晶硅层5和透明导电薄膜层7的宽度为500微米；使用溶剂除去固化后的胶水，通过印刷工艺，涂布胶水，固化，形成所需的图形，沉积n型非晶硅层6和TCO层7；其中，其中，n型非晶硅层6的厚度为10纳米，透明导电薄膜层7的厚度为100纳米，n型非晶硅层6和透明导电薄膜层7的宽度为500微米；使用溶剂除去固化后的胶水；相邻的P型非晶硅层5的中心点与N型非晶硅层6的中心点间隔1000微米；
S10：通过印刷工艺，在沉积的p型非晶硅层，n型非晶硅层和透明导电薄膜层上涂布胶水并固化，形成所需的图形，沉积二氧化硅绝缘隔离层8，厚度为100微米；
S11：通过丝网印刷工艺，经低温烧结(＜250℃)，形成银栅电极，银栅线9的宽度40-100μm，完成本发明的全背型异质结太阳电池的制备。
显然，所描述的实施例仅仅是本发明的部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都应当属于本发明保护的范围。
Claims (7)
1.一种全背型异质结太阳电池，包括硅基体层，其特征在于：在硅基体层(1)的前表面依次设置N型前表面场(2)和减反层(3)，在硅基体层(1)的背表面设置本征非晶硅钝化层(4)，在本征非晶硅钝化层(4)上间隔地设置有P型非晶硅层(5)和N型非晶硅层(6)，P型非晶硅层(5)和N型非晶硅层(6)上分别设置有透明导电薄膜层(7)，透明导电薄膜层(7)上设置有电极，所述P型非晶硅层(5)的厚度为5-20nm，宽度为100-1000μm，N型非晶硅层(6)的厚度为5-20nm，宽度为100-1000μm，相邻的P型非晶硅层(5)的中心点与N型非晶硅层(6)的中心点间隔150-3000μm，在所述P型非晶硅层(5)与N型非晶硅层(6)之间设置有绝缘隔离层(8)，所述绝缘隔离层(8)的厚度为60-200nm，所述透明导电薄膜层(7)的厚度为60-200nm，宽度为100-1000μm。
2.根据权利要求1所述的全背型异质结太阳电池，其特征在于：所述绝缘隔离层(8)采用二氧化硅、氮化硅、氧化铝的一种或多种的组合。
3.根据权利要求1所述的全背型异质结太阳电池，其特征在于：所述本征非晶硅钝化层(4)的厚度为3-15nm。
4.根据权利要求1所述的全背型异质结太阳电池，其特征在于：所述电极为银栅线(9)，银栅线(9)的宽度40-100μm。
5.一种制备权利要求1-4任一所述全背型异质结太阳电池的方法，其特征在于，包括如下步骤：
S1：提供一硅片作为硅基体层(1)；
S2：对硅基体层(1)进行标准RCA清洗，之后采用HF处理，形成清洁表面，去离子水冲刷后吹干；
S3：将硅基体层(1)置入扩散炉中，在基体层的表面形成二氧化硅保护层；
S4：单面去除二氧化硅保护层，通过单面制绒工艺，在基体层的前表面形成金字塔结构，随后进行标准RCA清洗；
S5：通过扩散工艺在金字塔结构上形成N型前表面场(2)；
S6：去除PSG，在前表面场上沉积氮化硅减反层(3)；
S7：通过湿法工艺，去除基体层(1)背面的二氧化硅保护层，经过标准RCA清洗工艺及HF处理，形成清洁的背表面；
S8：通过CVD技术，在背表面沉积本征非晶硅钝化层(4)，厚度为3-15nm；
S9：通过印刷工艺，涂布胶水，固化，形成所需的图形，沉积p型非晶硅层(5)和透明导电薄膜(TCO)层(7)；溶剂除去固化后的胶水，通过印刷工艺，涂布胶水，固化，形成所需的图形，沉积n型非晶硅层(6)和透明导电薄膜(TCO)层(7)；
S10：通过印刷工艺，涂布胶水，固化，形成所需的图形，在p型非晶硅层和n型非晶硅层和透明导电薄膜(TCO)层之间沉积绝缘隔离层(8)；
S11：通过丝网印刷工艺，经低温烧结，形成银栅电极，完成本发明的全背型异质结太阳电池的制备；
其中，所述P型非晶硅层(5)的厚度为5-20nm，宽度为100-1000μm，N型非晶硅层(6)的厚度为5-20nm，宽度为100-1000μm，P型非晶硅层(5)的中心点与N型非晶硅层(6)的中心点间隔150-3000μm，所述透明导电薄膜层(7)的厚度为60-200nm，宽度为100-1000μm。
6.根据权利要求5所述的方法，其特征在于：所述绝缘隔离层(8)采用二氧化硅、氮化硅、氧化铝的一种或多种的组合，绝缘隔离层(8)的厚度为60-200nm。
7.根据权利要求5所述的方法，其特征在于：所述银栅电极的银栅线(9)的宽度40-100μm。
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