CN105514206A - 背接触异质结太阳电池及其制备方法 - Google Patents
背接触异质结太阳电池及其制备方法 Download PDFInfo
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- CN105514206A CN105514206A CN201610028152.1A CN201610028152A CN105514206A CN 105514206 A CN105514206 A CN 105514206A CN 201610028152 A CN201610028152 A CN 201610028152A CN 105514206 A CN105514206 A CN 105514206A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 42
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 42
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 23
- 238000002955 isolation Methods 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000003292 glue Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 13
- 238000007711 solidification Methods 0.000 claims description 11
- 230000008023 solidification Effects 0.000 claims description 11
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- 239000004332 silver Substances 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000009766 low-temperature sintering Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
- H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201610028152.1A CN105514206B (zh) | 2016-01-16 | 2016-01-16 | 全背型异质结太阳电池及其制备方法 |
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CN201610028152.1A CN105514206B (zh) | 2016-01-16 | 2016-01-16 | 全背型异质结太阳电池及其制备方法 |
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CN105514206A true CN105514206A (zh) | 2016-04-20 |
CN105514206B CN105514206B (zh) | 2018-02-02 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106129133A (zh) * | 2016-06-27 | 2016-11-16 | 泰州乐叶光伏科技有限公司 | 一种全背电极接触晶硅太阳能电池结构及其制备方法 |
CN106252449A (zh) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | 局部掺杂前表面场背接触电池及其制备方法和组件、系统 |
CN107342333A (zh) * | 2017-07-19 | 2017-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种hibc电池及其制备方法 |
CN108615775A (zh) * | 2018-07-03 | 2018-10-02 | 黄河水电光伏产业技术有限公司 | 一种叉指背接触异质结单晶硅电池 |
CN108666387A (zh) * | 2018-07-03 | 2018-10-16 | 黄河水电光伏产业技术有限公司 | 一种背接触异质结n型单晶硅太阳电池 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
WO2019242550A1 (zh) * | 2018-06-21 | 2019-12-26 | 君泰创新(北京)科技有限公司 | 太阳能电池及其制作方法 |
CN114203843A (zh) * | 2020-08-27 | 2022-03-18 | 嘉兴阿特斯技术研究院有限公司 | 一种背接触式钙钛矿/硅异质结叠层电池组件及其制备方法和太阳能电池 |
CN115000188A (zh) * | 2022-05-25 | 2022-09-02 | 中国科学院电工研究所 | 一种用于晶硅异质结太阳电池迎光面的局域接触结构 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203617304U (zh) * | 2013-12-03 | 2014-05-28 | 常州天合光能有限公司 | 全背电极太阳能电池 |
CN105118870A (zh) * | 2015-08-31 | 2015-12-02 | 深圳市科纳能薄膜科技有限公司 | 一种制作背接触异质结单晶硅太阳能电池的方法 |
-
2016
- 2016-01-16 CN CN201610028152.1A patent/CN105514206B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN203617304U (zh) * | 2013-12-03 | 2014-05-28 | 常州天合光能有限公司 | 全背电极太阳能电池 |
CN105118870A (zh) * | 2015-08-31 | 2015-12-02 | 深圳市科纳能薄膜科技有限公司 | 一种制作背接触异质结单晶硅太阳能电池的方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106129133A (zh) * | 2016-06-27 | 2016-11-16 | 泰州乐叶光伏科技有限公司 | 一种全背电极接触晶硅太阳能电池结构及其制备方法 |
CN106252449A (zh) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | 局部掺杂前表面场背接触电池及其制备方法和组件、系统 |
CN106252449B (zh) * | 2016-08-26 | 2017-09-26 | 泰州中来光电科技有限公司 | 局部掺杂前表面场背接触电池及其制备方法和组件、系统 |
CN107342333A (zh) * | 2017-07-19 | 2017-11-10 | 青海黄河上游水电开发有限责任公司光伏产业技术分公司 | 一种hibc电池及其制备方法 |
WO2019242550A1 (zh) * | 2018-06-21 | 2019-12-26 | 君泰创新(北京)科技有限公司 | 太阳能电池及其制作方法 |
CN108615775B (zh) * | 2018-07-03 | 2024-01-30 | 黄河水电光伏产业技术有限公司 | 一种叉指背接触异质结单晶硅电池 |
CN108615775A (zh) * | 2018-07-03 | 2018-10-02 | 黄河水电光伏产业技术有限公司 | 一种叉指背接触异质结单晶硅电池 |
CN108666387A (zh) * | 2018-07-03 | 2018-10-16 | 黄河水电光伏产业技术有限公司 | 一种背接触异质结n型单晶硅太阳电池 |
CN108666387B (zh) * | 2018-07-03 | 2024-01-30 | 黄河水电光伏产业技术有限公司 | 一种背接触异质结n型单晶硅太阳电池 |
CN109950354A (zh) * | 2019-03-26 | 2019-06-28 | 天合光能股份有限公司 | 一种同质-异质结太阳能电池及其制备方法 |
CN114203843A (zh) * | 2020-08-27 | 2022-03-18 | 嘉兴阿特斯技术研究院有限公司 | 一种背接触式钙钛矿/硅异质结叠层电池组件及其制备方法和太阳能电池 |
CN115000188B (zh) * | 2022-05-25 | 2024-01-19 | 中国科学院电工研究所 | 一种用于晶硅异质结太阳电池迎光面的局域接触结构 |
CN115000188A (zh) * | 2022-05-25 | 2022-09-02 | 中国科学院电工研究所 | 一种用于晶硅异质结太阳电池迎光面的局域接触结构 |
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Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |