JP5409778B2 - クランプされた一体的なシャワーヘッド電極 - Google Patents
クランプされた一体的なシャワーヘッド電極 Download PDFInfo
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- JP5409778B2 JP5409778B2 JP2011510519A JP2011510519A JP5409778B2 JP 5409778 B2 JP5409778 B2 JP 5409778B2 JP 2011510519 A JP2011510519 A JP 2011510519A JP 2011510519 A JP2011510519 A JP 2011510519A JP 5409778 B2 JP5409778 B2 JP 5409778B2
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- 238000000034 method Methods 0.000 claims description 43
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 9
- 238000004891 communication Methods 0.000 claims description 7
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims description 4
- 238000009530 blood pressure measurement Methods 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 2
- 230000006978 adaptation Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 64
- 239000000463 material Substances 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000004696 Poly ether ether ketone Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002530 polyetherether ketone Polymers 0.000 description 4
- 239000004952 Polyamide Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229920003997 Torlon® Polymers 0.000 description 3
- 150000001241 acetals Chemical class 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
- -1 polytetrafluoroethylene Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229920005123 Celcon® Polymers 0.000 description 2
- 229920004943 Delrin® Polymers 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 239000004963 Torlon Substances 0.000 description 1
- 239000004699 Ultra-high molecular weight polyethylene Substances 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- KYKAJFCTULSVSH-UHFFFAOYSA-N chloro(fluoro)methane Chemical compound F[C]Cl KYKAJFCTULSVSH-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229920000785 ultra high molecular weight polyethylene Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4557—Heated nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32605—Removable or replaceable electrodes or electrode systems
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S403/00—Joints and connections
- Y10S403/12—Furniture type having a rotatable fastener or fastening element that tightens connection
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S403/00—Joints and connections
- Y10S403/13—Furniture type
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T403/00—Joints and connections
- Y10T403/32—Articulated members
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- Y10T403/32426—Plural distinct positions
- Y10T403/32442—At least one discrete position
- Y10T403/32451—Step-by-step adjustment
- Y10T403/32459—Retainer extends through aligned recesses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T403/00—Joints and connections
- Y10T403/70—Interfitted members
- Y10T403/7005—Lugged member, rotary engagement
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T403/00—Joints and connections
- Y10T403/70—Interfitted members
- Y10T403/7009—Rotary binding cam or wedge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T403/00—Joints and connections
- Y10T403/70—Interfitted members
- Y10T403/7041—Interfitted members including set screw
Description
例えば、以下の形態を挙げることができる。
[形態1]
プラズマ反応チャンバ内において使用するためのシャワーヘッド電極であって、
前記シャワーヘッド電極の上面および下面によって定められる中央部分および周縁部分であって、前記上面は、前記中央部分に広がる平坦表面を含み、前記下面は、前記中央部分に広がる平坦な内側表面および前記周縁部分に広がる段状の外側表面によって定められ、前記段状の外側表面は、前記シャワーヘッド電極の厚み増加領域を定める環状の平坦表面を含む、中央部分および周縁部分と、
前記電極の前記中央部分内の複数のガス出口であって、前記シャワーヘッド電極と、ウエハを支える下側電極と、の間のギャップに、プロセスガスを送ることができる複数のガス出口と、
前記周縁部分の前記上面内の、円周方向に互いに隔てられた複数のポケットであって、前記シャワーヘッド電極を受け板にクランプするように適応されたカムロックを受け入れるように構成された複数のポケットと、を備えるシャワーヘッド電極。
[形態2]
形態1に記載の電極であって、さらに、
前記上面内に位置合わせピン孔を備え、前記位置合わせピン孔は、前記受け板内に達する位置合わせピンに位置合わせされるように構成される、電極。
[形態3]
形態1に記載の電極であって、さらに、
前記段状の外側表面内に、チャンバ内における真空圧力測定を提供するためにマノメータユニットと連携するように適応されたガス穴の閉じ込めパターンを備える電極。
[形態4]
形態1に記載の電極であって、
前記シャワーヘッド電極の前記上面は、その外縁に環状の棚部を含み、前記棚部は、ガードリングの外側表面が前記シャワーヘッド電極の前記外側表面と同一面であるように前記ガードリングを支えるように構成される、電極。
[形態5]
形態1に記載の電極であって、さらに、
前記周縁部分内の前記上面上に環状凹部を備え、12インチ(約31cm)を超える直径を有し、前記環状凹部は、0.25インチ(約6.4mm)未満の深さと、少なくとも0.5インチ(約1.3cm)の幅とを有し、前記ポケットは、少なくとも0.5インチ(約1.3cm)の直径と、少なくとも0.3インチ(約7.6mm)の深さとを前記環状凹部内において有し、前記段状表面は、内側の平坦表面から少なくとも0.15インチ(約3.8mm)広がり、前記環状の平坦表面は、少なくとも1.5インチ(約3.8cm)の幅を有する、電極。
[形態6]
形態1に記載の電極であって、
前記段状表面は、内側および外側の傾斜表面を有し、前記内側の傾斜表面は、前記内側の平坦表面と前記環状の平坦表面との間に広がり、前記外側の傾斜表面は、前記環状の平坦表面と前記シャワーヘッド電極の外縁との間に広がり、前記外側の傾斜表面は、前記環状の平坦表面の面と30度未満の角度を形成し、前記内側の傾斜表面は、前記環状の平坦表面の面と30度を超える角度を形成する、電極。
[形態7]
電極アセンブリであって、
形態1に記載のシャワーヘッド電極と、
前記シャワーヘッド電極内の前記ポケットに位置合わせされた軸方向孔と、前記軸方向孔と連通する半径方向孔とを含む受け板と、
前記半径方向孔に装入される回転可能なカムシャフトと、
前記シャワーヘッド電極内の前記ポケット内に位置するロックピンであって、前記ロックピンは、その自由端に拡大ヘッドを含み、前記カムシャフトは、前記シャワーヘッド電極を前記受け板に機械的にクランプするために前記ロックピンの前記ヘッドに係合して前記ヘッドをロックするように適応された切り欠きを含む、ロックピンと、
を備える電極アセンブリ。
[形態8]
形態7に記載の電極アセンブリであって、
前記ロックピンの基部はソケット内に位置し、前記ソケットは、その外側表面上に、前記ポケットの内側表面上のネジ山に係合するネジ山を含み、前記ソケットは、前記シャワーヘッド電極の前記上面に係合するフランジを含み、前記受け板内の前記軸方向孔は幅広部分と幅狭部分とを含み、前記幅広部分は前記フランジを受け入れ、前記幅狭部分は前記ロックピンを受け入れる、電極アセンブリ。
[形態9]
形態8に記載の電極アセンブリであって、
前記ロックピンは、前記受け板と前記シャワーヘッド電極との間の熱膨張の差に適応するために前記ソケット内において軸方向および側方に移動可能である、電極アセンブリ。
[形態10]
形態7に記載の電極アセンブリであって、
前記シャワーヘッド電極は、多結晶シリコン、単結晶シリコン、炭化ケイ素、アルミニウム、陽極酸化アルミニウム、またはイットリアをコーティングされたアルミニウムの板であり、前記受け板は、アルミニウムの板である、電極アセンブリ。
[形態11]
形態7に記載の電極アセンブリであって、
前記受け板は、熱制御冷却通路および加熱素子を有さない、電極アセンブリ。
[形態12]
形態7に記載の電極アセンブリであって、さらに、
前記受け板に取り付けられた熱制御板を備え、前記熱制御板は、その下側表面上に、前記受け板内のガス通路と連通するガスプレナムを定める環状突出を有する、電極アセンブリ。
[形態13]
形態7に記載の電極アセンブリであって、さらに、
前記受け板と前記シャワーヘッド電極との間にガスシールを備え、前記ガスシールは、ガス通路の外側に位置する、電極アセンブリ。
[形態14]
プラズマチャンバ内において半導体基板を処理する方法であって、
前記半導体基板を前記チャンバ内の底部電極上で支えるステップと、
前記チャンバにプロセスガスを供給するステップと、
上側電極の暴露表面の付近においてプラズマを発生させるステップと、
前記プラズマによって前記半導体基板を処理するステップと、を備え、
前記上側電極は、形態1に記載のシャワーヘッド電極である、方法。
[形態15]
形態14に記載の方法であって、
前記シャワーヘッド電極の温度は、前記チャンバの温度制御上壁と、熱制御板と、受け板とによって制御され、前記熱制御板は、前記熱制御板と前記受け板との間にプレナムを形成する環状突出を含み、前記プレナムは、前記シャワーヘッド電極内のガス通路に位置合わせされた前記受け板内のガス通路と流体連通しており、前記受け板は、前記シャワーヘッド電極と前記熱制御板との間に熱経路を提供する、方法。
[形態16]
形態14に記載の方法であって、
前記半導体基板は、半導体ウエハであり、前記処理するステップは、前記プラズマによって前記半導体ウエハをエッチングすることを含む、方法。
[形態17]
形態14に記載の方法であって、
前記処理するステップ中、前記上側電極は接地され、前記底部電極は通電される、方法。
[形態18]
形態14に記載の方法であって、
前記シャワーヘッド電極と前記受け板との間に熱膨張の差を生じさせる高温に前記シャワーヘッド電極および前記受け板を加熱することと、
ロックピンの動きによって前記熱膨張に適合することと、を備える方法。
[形態19]
形態7に記載のシャワーヘッド電極アセンブリのシャワーヘッド電極を交換する方法であって、
前記カムロックを解除して前記カムロックを前記ロックピンから切り離すことと、
前記シャワーヘッド電極を取り外すことと、
新しいまたは修復されたシャワーヘッド電極のロックピンを前記受け板内の前記軸方向孔に位置合わせすることと、
前記カムロックを回転させて前記ロックピンの前記ヘッドに係合させることと、を備える方法。
Claims (19)
- プラズマ反応チャンバ内において使用するためのシャワーヘッド電極であって、
前記シャワーヘッド電極の上面および下面によって定められる中央部分および周縁部分であって、前記上面は、前記中央部分に広がる平坦表面を含み、前記下面は、前記中央部分に広がる平坦な内側表面および前記周縁部分に広がる段状の外側表面によって定められ、前記段状の外側表面は、前記シャワーヘッド電極の厚み増加領域を定める環状の平坦表面を含む、中央部分および周縁部分と、
前記電極の前記中央部分内の複数のガス出口であって、前記シャワーヘッド電極と、ウエハを支える下側電極と、の間のギャップに、プロセスガスを送ることができる複数のガス出口と、
前記周縁部分の前記上面内の、円周方向に互いに隔てられた複数のポケットであって、前記シャワーヘッド電極を受け板にクランプするように適応されたカムロックを受け入れるように構成された複数のポケットと、を備えるシャワーヘッド電極。 - 請求項1に記載の電極であって、さらに、
前記上面内に位置合わせピン孔を備え、前記位置合わせピン孔は、前記受け板内に達する位置合わせピンに位置合わせされるように構成される、電極。 - 請求項1又は請求項2に記載の電極であって、さらに、
前記段状の外側表面内に、チャンバ内における真空圧力測定を提供するためにマノメータユニットと連携するように適応されたガス穴の閉じ込めパターンを備える電極。 - 請求項1又は請求項2に記載の電極であって、
前記シャワーヘッド電極の前記上面は、その外縁に環状の棚部を含み、前記棚部は、ガードリングの第1の表面が前記シャワーヘッド電極の前記外側表面と同一面であるように前記ガードリングを支えるように構成され、前記第1の表面は、前記ガードリングの外側表面である、電極。 - 請求項1又は請求項2に記載の電極であって、さらに、
前記周縁部分内の前記上面上に環状凹部を備え、12インチ(約31cm)を超える直径を有し、前記環状凹部は、0.25インチ(約6.4mm)未満の深さと、少なくとも0.5インチ(約1.3cm)の幅とを有し、前記ポケットは、少なくとも0.5インチ(約1.3cm)の直径と、少なくとも0.3インチ(約7.6mm)の深さとを前記環状凹部内において有し、前記段状表面は、前記平坦な内側表面から少なくとも0.15インチ(約3.8mm)広がり、前記環状の平坦表面は、少なくとも1.5インチ(約3.8cm)の幅を有する、電極。 - 請求項1又は請求項2に記載の電極であって、
前記段状表面は、内側および外側の傾斜表面を有し、前記内側の傾斜表面は、前記平坦な内側表面と前記環状の平坦表面との間に広がり、前記外側の傾斜表面は、前記環状の平坦表面と前記シャワーヘッド電極の外縁との間に広がり、前記外側の傾斜表面は、前記環状の平坦表面の面と30度未満の角度を形成し、前記内側の傾斜表面は、前記環状の平坦表面の面と30度を超える角度を形成する、電極。 - 電極アセンブリであって、
請求項1又は請求項2に記載のシャワーヘッド電極と、
前記シャワーヘッド電極内の前記ポケットに位置合わせされた軸方向孔と、前記軸方向孔と連通する半径方向孔とを含む受け板と、
前記半径方向孔に装入される回転可能なカムシャフトと、
前記シャワーヘッド電極内の前記ポケット内に位置するロックピンであって、その自由端に拡大ヘッドを含む、ロックピンと、を備え、
前記カムシャフトは、前記シャワーヘッド電極を前記受け板に機械的にクランプするために前記ロックピンの前記ヘッドに係合して前記ヘッドをロックするように適応された切り欠きを含む、電極アセンブリ。 - 請求項7に記載の電極アセンブリであって、
前記ロックピンの基部はソケット内に位置し、前記ソケットは、その外側表面上に、前記ポケットの内側表面上のネジ山に係合するネジ山を含み、前記ソケットは、前記シャワーヘッド電極の前記上面に係合するフランジを含み、前記受け板内の前記軸方向孔は幅広部分と幅狭部分とを含み、前記幅広部分は前記フランジを受け入れ、前記幅狭部分は前記ロックピンを受け入れる、電極アセンブリ。 - 請求項8に記載の電極アセンブリであって、
前記ロックピンは、前記受け板と前記シャワーヘッド電極との間の熱膨張の差に適応するために前記ソケット内において軸方向および側方に移動可能である、電極アセンブリ。 - 請求項7に記載の電極アセンブリであって、
前記シャワーヘッド電極は、多結晶シリコン、単結晶シリコン、炭化ケイ素、アルミニウム、陽極酸化アルミニウム、またはイットリアをコーティングされたアルミニウムの板であり、前記受け板は、アルミニウムの板である、電極アセンブリ。 - 請求項7に記載の電極アセンブリであって、
前記受け板は、熱制御冷却通路および加熱素子を有さない、電極アセンブリ。 - 請求項7に記載の電極アセンブリであって、さらに、
前記受け板に取り付けられた熱制御板を備え、前記熱制御板は、その下側表面上に、前記受け板内のガス通路と連通するガスプレナムを定める環状突出を有する、電極アセンブリ。 - 請求項7に記載の電極アセンブリであって、さらに、
前記受け板と前記シャワーヘッド電極との間にガスシールを備え、前記ガスシールは、ガス通路の外側に位置する、電極アセンブリ。 - プラズマチャンバ内において半導体基板を処理する方法であって、
前記半導体基板を前記チャンバ内の底部電極上で支えるステップと、
前記チャンバにプロセスガスを供給するステップと、
上側電極の暴露表面の付近においてプラズマを発生させるステップと、
前記プラズマによって前記半導体基板を処理するステップと、を備え、
前記上側電極は、請求項1又は請求項2に記載のシャワーヘッド電極である、方法。 - 請求項14に記載の方法であって、
前記シャワーヘッド電極の温度は、前記チャンバの温度制御上壁と、熱制御板と、受け板とによって制御され、前記熱制御板は、前記熱制御板と前記受け板との間にプレナムを形成する環状突出を含み、前記プレナムは、前記シャワーヘッド電極内のガス通路に位置合わせされた前記受け板内のガス通路と流体連通しており、前記受け板は、前記シャワーヘッド電極と前記熱制御板との間に熱経路を提供する、方法。 - 請求項14に記載の方法であって、
前記半導体基板は、半導体ウエハであり、前記処理するステップは、前記プラズマによって前記半導体ウエハをエッチングすることを含む、方法。 - 請求項14に記載の方法であって、
前記処理するステップ中、前記上側電極は接地され、前記底部電極は通電される、方法。 - 請求項14に記載の方法であって、
前記シャワーヘッド電極と受け板との間に熱膨張の差を生じさせる高温に前記シャワーヘッド電極および前記受け板を加熱することと、
前記シャワーヘッド電極を前記受け板に取りつけるロックピンの動きによって前記熱膨張に適合することと、を備える方法。 - 請求項7に記載のシャワーヘッド電極アセンブリのシャワーヘッド電極を交換する方法であって、
前記カムロックを解除して前記カムロックを前記ロックピンから切り離すことと、
前記シャワーヘッド電極を取り外すことと、
新しいまたは修復されたシャワーヘッド電極のロックピンを前記受け板内の前記軸方向孔に位置合わせすることと、
前記カムロックを回転させて前記ロックピンの前記ヘッドに係合させることと、を備える方法。
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US12/216,524 US8221582B2 (en) | 2008-07-07 | 2008-07-07 | Clamped monolithic showerhead electrode |
US12/216,524 | 2008-07-07 | ||
PCT/US2009/003952 WO2010005540A2 (en) | 2008-07-07 | 2009-07-06 | Clamped monolithic showerhead electrode |
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- 2009-07-06 JP JP2011510519A patent/JP5409778B2/ja active Active
- 2009-07-06 MY MYPI2011000025A patent/MY159992A/en unknown
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MY159992A (en) | 2017-02-15 |
WO2010005540A3 (en) | 2010-04-22 |
KR20100118997A (ko) | 2010-11-08 |
TW201016079A (en) | 2010-04-16 |
US8221582B2 (en) | 2012-07-17 |
US20100003829A1 (en) | 2010-01-07 |
US8796153B2 (en) | 2014-08-05 |
EP2301308A2 (en) | 2011-03-30 |
US8414719B2 (en) | 2013-04-09 |
EP2301308A4 (en) | 2013-08-07 |
KR101183509B1 (ko) | 2012-09-21 |
US20120258603A1 (en) | 2012-10-11 |
CN102037790A (zh) | 2011-04-27 |
WO2010005540A4 (en) | 2010-06-24 |
TWI536871B (zh) | 2016-06-01 |
CN102037790B (zh) | 2014-04-16 |
EP2301308B1 (en) | 2014-09-03 |
WO2010005540A2 (en) | 2010-01-14 |
JP2011521472A (ja) | 2011-07-21 |
US20130337654A1 (en) | 2013-12-19 |
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