JP5378631B2 - 気相成長結晶薄膜製造方法 - Google Patents

気相成長結晶薄膜製造方法 Download PDF

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JP5378631B2
JP5378631B2 JP2000188412A JP2000188412A JP5378631B2 JP 5378631 B2 JP5378631 B2 JP 5378631B2 JP 2000188412 A JP2000188412 A JP 2000188412A JP 2000188412 A JP2000188412 A JP 2000188412A JP 5378631 B2 JP5378631 B2 JP 5378631B2
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thin film
mist
temperature
ultrafine particles
crystal thin
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JP2001335922A (ja
JP2001335922A5 (enExample
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弘信 佐藤
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JP2000188412A 2000-05-22 2000-05-22 気相成長結晶薄膜製造方法 Expired - Fee Related JP5378631B2 (ja)

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JP2001335922A JP2001335922A (ja) 2001-12-07
JP2001335922A5 JP2001335922A5 (enExample) 2007-10-18
JP5378631B2 true JP5378631B2 (ja) 2013-12-25

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006043545A (ja) * 2004-08-02 2006-02-16 Ricoh Co Ltd 有機微結晶作製装置及び有機微結晶作製方法並びに有機微結晶
JP5099811B2 (ja) * 2006-12-27 2012-12-19 国立大学法人名古屋大学 自己組織化単分子膜作製装置とその利用
JP4573902B2 (ja) * 2008-03-28 2010-11-04 三菱電機株式会社 薄膜形成方法
CN113521791A (zh) * 2021-06-23 2021-10-22 福建江夏学院 一种光电半导体薄膜的超声波振荡制备装置

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* Cited by examiner, † Cited by third party
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US4928627A (en) * 1985-12-23 1990-05-29 Atochem North America, Inc. Apparatus for coating a substrate
JPH01132003A (ja) * 1987-11-17 1989-05-24 Nippon Soda Co Ltd 透明導電基板およびその製造方法
JPH08330303A (ja) * 1995-05-30 1996-12-13 Mitsubishi Electric Corp 薄膜形成方法および薄膜形成装置

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