JP2001335922A5 - - Google Patents
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- Publication number
- JP2001335922A5 JP2001335922A5 JP2000188412A JP2000188412A JP2001335922A5 JP 2001335922 A5 JP2001335922 A5 JP 2001335922A5 JP 2000188412 A JP2000188412 A JP 2000188412A JP 2000188412 A JP2000188412 A JP 2000188412A JP 2001335922 A5 JP2001335922 A5 JP 2001335922A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature
- substrate
- mist
- furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 description 60
- 239000013078 crystal Substances 0.000 description 36
- 239000011882 ultra-fine particle Substances 0.000 description 30
- 239000000758 substrate Substances 0.000 description 29
- 239000003595 mist Substances 0.000 description 26
- 238000004519 manufacturing process Methods 0.000 description 22
- 238000000034 method Methods 0.000 description 19
- 239000007789 gas Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 16
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 15
- 150000001875 compounds Chemical class 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- 239000007788 liquid Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 150000003839 salts Chemical class 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000012159 carrier gas Substances 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 239000000443 aerosol Substances 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000013076 target substance Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000003113 dilution method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012761 high-performance material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000188412A JP5378631B2 (ja) | 2000-05-22 | 2000-05-22 | 気相成長結晶薄膜製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000188412A JP5378631B2 (ja) | 2000-05-22 | 2000-05-22 | 気相成長結晶薄膜製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001335922A JP2001335922A (ja) | 2001-12-07 |
| JP2001335922A5 true JP2001335922A5 (enExample) | 2007-10-18 |
| JP5378631B2 JP5378631B2 (ja) | 2013-12-25 |
Family
ID=18688199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000188412A Expired - Fee Related JP5378631B2 (ja) | 2000-05-22 | 2000-05-22 | 気相成長結晶薄膜製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5378631B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006043545A (ja) * | 2004-08-02 | 2006-02-16 | Ricoh Co Ltd | 有機微結晶作製装置及び有機微結晶作製方法並びに有機微結晶 |
| JP5099811B2 (ja) * | 2006-12-27 | 2012-12-19 | 国立大学法人名古屋大学 | 自己組織化単分子膜作製装置とその利用 |
| JP4573902B2 (ja) * | 2008-03-28 | 2010-11-04 | 三菱電機株式会社 | 薄膜形成方法 |
| CN113521791A (zh) * | 2021-06-23 | 2021-10-22 | 福建江夏学院 | 一种光电半导体薄膜的超声波振荡制备装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4928627A (en) * | 1985-12-23 | 1990-05-29 | Atochem North America, Inc. | Apparatus for coating a substrate |
| JPH01132003A (ja) * | 1987-11-17 | 1989-05-24 | Nippon Soda Co Ltd | 透明導電基板およびその製造方法 |
| JPH08330303A (ja) * | 1995-05-30 | 1996-12-13 | Mitsubishi Electric Corp | 薄膜形成方法および薄膜形成装置 |
-
2000
- 2000-05-22 JP JP2000188412A patent/JP5378631B2/ja not_active Expired - Fee Related
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