JP5377366B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5377366B2 JP5377366B2 JP2010050274A JP2010050274A JP5377366B2 JP 5377366 B2 JP5377366 B2 JP 5377366B2 JP 2010050274 A JP2010050274 A JP 2010050274A JP 2010050274 A JP2010050274 A JP 2010050274A JP 5377366 B2 JP5377366 B2 JP 5377366B2
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Description
12 …基板
14 …モールド
16 …チップ
16a,18b …WBパッド
18 …配線パターン
18a …電極
18c …連結部
20 …レジスト
22 …ボンディング材
24 …ボンディングワイヤ
26 …バンプ
28 …DB領域
30 …PIテープ
Claims (18)
- ダイボンディング領域を有する絶縁性基板、前記絶縁性基板上の前記ダイボンディング領域外に形成される複数のワイヤボンディングパッド、前記ダイボンディング領域にダイボンディングされる半導体チップ、前記複数のワイヤボンディングパッドの各々と前記半導体チップとを接続するボンディングワイヤ、前記ダイボンディング領域に形成されて前記複数のワイヤボンディングパッドの各々と接続される電極、および前記絶縁性基板の裏面側に形成されて前記電極と接続されるバンプを備える半導体装置において、
前記複数のワイヤボンディングパッドの各々は、前記ボンディングワイヤが接続される本体部と、前記本体部の外側端部を前記絶縁性基板の外周縁の各辺まで当該辺に対して垂直に延ばして形成した前記本体部より幅狭の延出部とを有し、互いに隣接するワイヤボンディングパッドのうち少なくとも1組が、一方のワイヤボンディングパッドの延出部の延長線上に他方のワイヤボンディングパッドの本体部が位置する間隔で配置され、
前記複数のワイヤボンディングパッドの各本体部を、前記ダイボンディング領域の中心から各ワイヤボンディングパッドのボンディング位置に延びる線と並行またはほぼ並行に長手方向が沿う直線状に形成し、かつその内側端部が前記半導体チップの各辺に平行な直線に沿って並ぶように形成され、
前記ボンディングワイヤは前記ワイヤボンディングパッドの前記本体部の外側端部のみにボンディングされることを特徴とする、半導体装置。 - 前記複数のワイヤボンディングパッドのうち前記半導体チップの各辺の中央部に対応する位置に配置されたワイヤボンディングパッドと、前記ダイボンディング領域の中心部に形成される前記電極とが接続される、請求項1記載の半導体装置。
- 前記絶縁性基板は軟質フィルムを含む、請求項1または2記載の半導体装置。
- 前記電極は行列状に配置される、請求項1ないし3のいずれかに記載の半導体装置。
- 前記絶縁性基板は四角形であり、
前記複数のワイヤボンディングパッドの各本体部の内側端部は、前記絶縁性基板の外周縁の各辺に平行な直線に沿って配置される、請求項1ないし4のいずれかに記載の半導体装置。 - 前記複数のワイヤボンディングパッドの各本体部は、形状がほぼ長方形である、請求項5記載の半導体装置。
- 前記軟質フィルムは、ポリイミドによって形成される、請求項3記載の半導体装置。
- 前記複数のワイヤボンディングパッドの各々は、前記ダイボンディング領域の外周縁に沿って並んで配置される、請求項1ないし7のいずれかに記載の半導体装置。
- 前記複数のワイヤボンディングパッドの各々は、前記絶縁性基板の外周縁の各辺に沿って並んで配置される、請求項1ないし8のいずれかに記載の半導体装置。
- 前記ワイヤボンディングパッドは、列の中央から端に向かうに従ってその傾斜角が大きくなるように形成される、請求項8または9記載の半導体装置。
- 前記半導体装置は、BGA型の半導体装置である、請求項1ないし10のいずれかに記載の半導体装置。
- 前記半導体チップは、前記ダイボンディング領域に収まるサイズである、請求項1ないし11のいずれかに記載の半導体装置。
- 前記半導体チップは、形状が前記ダイボンディング領域の相似形である、請求項12記載の半導体装置。
- 前記絶縁性基板上には、配線パターンが形成され、
前記ダイボンディング領域上において前記ワイヤボンディングパッドにかからないように前記配線パターンを覆う絶縁膜をさらに備える、請求項1ないし13のいずれかに記載の半導体装置。 - 前記ボンディングワイヤは、金線である、請求項1ないし14のいずれかに記載の半導体装置。
- 前記半導体チップは、銀を含むペーストを介して前記ダイボンディング領域にダイボンディングされる、請求項1ないし15のいずれかに記載の半導体装置。
- 前記電極に対応するスルーホールをさらに備える、請求項1ないし16のいずれかに記載の半導体装置。
- 前記バンプが前記スルーホールを通して前記電極に接続される、請求項17記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP2010050274A JP5377366B2 (ja) | 2010-03-08 | 2010-03-08 | 半導体装置 |
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Application Number | Priority Date | Filing Date | Title |
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JP2010050274A JP5377366B2 (ja) | 2010-03-08 | 2010-03-08 | 半導体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2000215672A Division JP2002033347A (ja) | 2000-07-17 | 2000-07-17 | 半導体装置 |
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JPS59139660A (ja) * | 1983-01-31 | 1984-08-10 | Hitachi Ltd | 半導体装置 |
JPH01184982A (ja) * | 1988-01-20 | 1989-07-24 | Sanyo Electric Co Ltd | 厚膜配線基板 |
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JPH05190586A (ja) * | 1992-01-14 | 1993-07-30 | Matsushita Electric Works Ltd | 半導体装置 |
JP3176542B2 (ja) * | 1995-10-25 | 2001-06-18 | シャープ株式会社 | 半導体装置及びその製造方法 |
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JPH1140697A (ja) * | 1997-07-17 | 1999-02-12 | Hitachi Cable Ltd | 半導体装置用テープキャリア |
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JP3844032B2 (ja) * | 1998-07-14 | 2006-11-08 | 日本テキサス・インスツルメンツ株式会社 | 半導体装置及びその製造方法 |
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