JP5370857B2 - ゲルマニウム受光器およびその製造方法 - Google Patents
ゲルマニウム受光器およびその製造方法 Download PDFInfo
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- JP5370857B2 JP5370857B2 JP2010047588A JP2010047588A JP5370857B2 JP 5370857 B2 JP5370857 B2 JP 5370857B2 JP 2010047588 A JP2010047588 A JP 2010047588A JP 2010047588 A JP2010047588 A JP 2010047588A JP 5370857 B2 JP5370857 B2 JP 5370857B2
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- silicon
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- 229910052732 germanium Inorganic materials 0.000 title claims description 220
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims description 218
- 238000004519 manufacturing process Methods 0.000 title description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 192
- 229910052710 silicon Inorganic materials 0.000 claims description 136
- 239000010703 silicon Substances 0.000 claims description 136
- 238000000034 method Methods 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 40
- 230000008569 process Effects 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 18
- 238000005253 cladding Methods 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 description 36
- 238000004140 cleaning Methods 0.000 description 14
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 12
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000011259 mixed solution Substances 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 4
- 230000003213 activating effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010129 solution processing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Formation Of Insulating Films (AREA)
- Light Receiving Elements (AREA)
Description
Claims (3)
- シリコン層の上に接して形成された第1ゲルマニウム層と、
この第1ゲルマニウム層の上に接して形成された第2ゲルマニウム層と、
この第2ゲルマニウム層の上に接し、前記第2ゲルマニウム層の上面を覆って形成されたシリコンキャップ層と
を少なくとも備え、
前記第1ゲルマニウム層および前記第2ゲルマニウム層の一方はノンドープとされ、他方は第1導電型とされ、
ノンドープとされた前記第1ゲルマニウム層の側の前記シリコン層、もしくはノンドープとされた前記第2ゲルマニウム層の側の前記シリコンキャップ層は、第2導電型とされ、
第1導電型とされた前記第2ゲルマニウム層の側の前記シリコンキャップ層、もしくは第1導電型とされた前記第1ゲルマニウム層の側の前記シリコン層は、第1導電型とされている
ことを特徴とするゲルマニウム受光器。 - 請求項1記載のゲルマニウム受光器において、
第2導電型とされた前記シリコン層の上にノンドープとされた前記第1ゲルマニウム層が形成され、
前記第1ゲルマニウム層の上に第1導電型とされた前記第2ゲルマニウム層が形成され、
前記第2ゲルマニウム層の上に第1導電型とされた前記シリコンキャップ層が形成されている
ことを特徴とするゲルマニウム受光器。 - 酸化シリコンからなる下部クラッド層の上にシリコンからなるシリコンコアを形成する第1工程と、
一部の前記シリコンコアに第1導電型の不純物を導入して第1導電型領域を形成する第2工程と、
前記下部クラッド層の上に前記シリコンコアを覆うように上部クラッド層を形成する第3工程と、
前記シリコンコアの前記第1導電型領域の一部が露出する開口部を前記上部クラッド層に形成する第4工程と、
前記第1導電型領域の露出部に接してゲルマニウム層を選択的に形成する第5工程と、
前記ゲルマニウム層の上に接して前記ゲルマニウム層の上面を覆ってシリコンキャップ層を形成する第6工程と、
前記ゲルマニウム層の上層に第2導電型の不純物を導入して第2導電型領域を形成し、少なくとも前記ゲルマニウム層および前記第2導電型領域を含んで構成されたゲルマニウム受光器を形成する第7工程と
を少なくとも備えることを特徴とするゲルマニウム受光器の製造方法。
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JP2011181874A JP2011181874A (ja) | 2011-09-15 |
JP5370857B2 true JP5370857B2 (ja) | 2013-12-18 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017038072A1 (ja) * | 2015-08-28 | 2017-03-09 | 日本電信電話株式会社 | 光検出器 |
US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
WO2019220891A1 (ja) | 2018-05-17 | 2019-11-21 | 日本電信電話株式会社 | 光検出器 |
WO2019225439A1 (ja) | 2018-05-21 | 2019-11-28 | 日本電信電話株式会社 | 光検出器 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9269869B2 (en) | 2011-12-12 | 2016-02-23 | Hitachi, Ltd. | Semiconductor optical element |
JP5917978B2 (ja) * | 2012-03-29 | 2016-05-18 | 株式会社日立製作所 | 半導体装置及びその製造方法 |
JP6533131B2 (ja) | 2015-09-04 | 2019-06-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP6699055B2 (ja) * | 2016-06-06 | 2020-05-27 | 日本電信電話株式会社 | アバランシェ受光器 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10290023A (ja) * | 1997-04-15 | 1998-10-27 | Nec Corp | 半導体光検出器 |
JP4879411B2 (ja) * | 2001-07-17 | 2012-02-22 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2003282932A (ja) * | 2002-03-27 | 2003-10-03 | Seiko Epson Corp | 半導体装置とその製造方法 |
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10571631B2 (en) | 2015-01-05 | 2020-02-25 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
US11703643B2 (en) | 2015-01-05 | 2023-07-18 | The Research Foundation For The State University Of New York | Integrated photonics including waveguiding material |
US9864138B2 (en) | 2015-01-05 | 2018-01-09 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
US10830952B2 (en) | 2015-01-05 | 2020-11-10 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
US10295745B2 (en) | 2015-01-05 | 2019-05-21 | The Research Foundation For The State University Of New York | Integrated photonics including germanium |
JP2018142751A (ja) * | 2015-08-28 | 2018-09-13 | 日本電信電話株式会社 | 光検出器 |
US10720543B2 (en) | 2015-08-28 | 2020-07-21 | Nippon Telegraph And Telephone Corporation | Photodetector |
WO2017038072A1 (ja) * | 2015-08-28 | 2017-03-09 | 日本電信電話株式会社 | 光検出器 |
JPWO2017038072A1 (ja) * | 2015-08-28 | 2017-12-14 | 日本電信電話株式会社 | 光検出器 |
WO2019220891A1 (ja) | 2018-05-17 | 2019-11-21 | 日本電信電話株式会社 | 光検出器 |
US11404453B2 (en) | 2018-05-17 | 2022-08-02 | Nippon Telegraph And Telephone Corporation | Photodetector |
WO2019225439A1 (ja) | 2018-05-21 | 2019-11-28 | 日本電信電話株式会社 | 光検出器 |
US11921324B2 (en) | 2018-05-21 | 2024-03-05 | Nippon Telegraph And Telephone Corporation | Photodetector |
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JP2011181874A (ja) | 2011-09-15 |
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