JP7443672B2 - 光半導体素子及び光伝送装置 - Google Patents
光半導体素子及び光伝送装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 164
- 230000003287 optical effect Effects 0.000 title claims description 154
- 230000005540 biological transmission Effects 0.000 title claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 239000012535 impurity Substances 0.000 claims description 18
- 238000013459 approach Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 58
- 238000004519 manufacturing process Methods 0.000 description 52
- 229920002120 photoresistant polymer Polymers 0.000 description 27
- 230000031700 light absorption Effects 0.000 description 20
- 230000035945 sensitivity Effects 0.000 description 20
- 239000000969 carrier Substances 0.000 description 18
- 239000000758 substrate Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000003795 chemical substances by application Substances 0.000 description 8
- 230000001427 coherent effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 230000004044 response Effects 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 210000001503 joint Anatomy 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
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- G02B6/24—Coupling light guides
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Description
ここで、PIN型PDに代わる、Siフォトニクスにおける単一走行キャリア型フォトダイオード(uni-traveling-carrier photo diode:UTC-PD)の参考例について説明する。図1は、参考例に係る光半導体素子の構成を示す断面図である。
先ず、第1の実施形態について説明する。第1の実施形態は、UTC-PDを含む光半導体素子に関する。図3Aは、第1の実施形態に係る光半導体素子の構成を示す上面図である。図3Bは、第1の実施形態に係る光半導体素子における半導体領域のレイアウトを示す図である。図3Cは、第1の実施形態に係る光半導体素子の構成を示す断面図である。図3Cは、図3A及び図3B中のI-I線に沿った断面図に相当する。
次に、第2の実施形態について説明する。第2の実施形態は、UTC-PDを含む光半導体素子に関する。図5Aは、第2の実施形態に係る光半導体素子の構成を示す上面図である。図5Bは、第2の実施形態に係る光半導体素子における半導体領域のレイアウトを示す図である。図5Cは、第2の実施形態に係る光半導体素子の構成を示す断面図である。図5Cは、図5A及び図5B中のI-I線に沿った断面図に相当する。
次に、第3の実施形態について説明する。第3の実施形態は、UTC-PDを含む光半導体素子に関する。図20は、第3の実施形態に係る光半導体素子の構成を示す断面図である。図20は、第1の実施形態に関する図3A及び図3B中のI-I線に沿った断面図に相当する。
次に、第4の実施形態について説明する。第4の実施形態は、光半導体素子を含む光伝送装置に関する。図23は、第4の実施形態に係る光伝送装置の構成を示すブロック図である。
第1のバンドギャップを備えた第1の半導体層と、
前記第1のバンドギャップより小さい第2のバンドギャップを備え、前記第1の半導体層上に形成された第1の極性の第2の半導体層と、
を有し、
前記第1の半導体層は、
第1の極性の第1の導電性領域と、
第2の極性の第2の導電性領域と、
前記第1の導電性領域と前記第2の導電性領域との間の非導電性領域と、
を有し、
前記第2の半導体層は、前記第1の導電性領域及び前記非導電性領域に接することを特徴とする光半導体素子。
(付記2)
前記第1の導電性領域にオーミック接触する第1の金属膜と、
前記第2の導電性領域にオーミック接触する第2の金属膜と、
を有することを特徴とする付記1に記載の光半導体素子。
(付記3)
前記第1の導電性領域は、
前記第1の金属膜と接する第3の導電性領域と、
前記非導電性領域と接する第4の導電性領域と、
を有し、
前記第3の導電性領域は前記第4の導電性領域よりも高濃度でp型不純物を含有することを特徴とする付記2に記載の光半導体素子。
(付記4)
前記第1の半導体層の前記第2の半導体層と接する領域にリセスが形成されていることを特徴とする付記1乃至3のいずれか1項に記載の光半導体素子。
(付記5)
平面視で前記第1の半導体層と前記第2の半導体層とが重なり合う光電変換部と、
前記光電変換部に繋がるモード変換部と、
を有し、
前記モード変換部内で、前記第1の半導体層は、前記光電変換部に近づくほど幅が広くなる平面形状を有することを特徴とする付記1乃至4のいずれか1項に記載の光半導体素子。
(付記6)
第1の極性はp型であり、
第2の極性はn型であることを特徴とする付記1乃至5のいずれか1項に記載の光半導体素子。
(付記7)
前記第1の半導体層がSi層であり、
前記第2の半導体層がSixGe1-x層(0≦x<1)であることを特徴とする付記1乃至6のいずれか1項に記載の光半導体素子。
(付記8)
前記第1の半導体層がSi層であり、
前記第2の半導体層がGe1-xSnx層(0≦x<1)であることを特徴とする付記1乃至6のいずれか1項に記載の光半導体素子。
(付記9)
付記1乃至8のいずれか1項に記載の光半導体素子を有することを特徴とする光伝送装置。
113:Si層
121、121A:p+Si領域
121B:p型Si領域
122:i型Si領域
123:n+Si領域
133、333:p型Ge層
134P、134N:金属膜
141:導波路領域
142:モード変換部
143:光電変換部
313:リセス
400:Siフォトニクスコヒーレント集積素子
424A、424B:受光器
Claims (7)
- 第1のバンドギャップを備えた第1の半導体層と、
前記第1のバンドギャップより小さい第2のバンドギャップを備え、前記第1の半導体層上に形成された第1の極性の第2の半導体層と、
前記第2の半導体層の上面及び側面に接するSi酸化膜と、
を有し、
前記第1の半導体層は、
前記第1の極性を有する第1の導電性領域と、
前記第1の極性とは異なる第2の極性を有する第2の導電性領域と、
前記第1の導電性領域と前記第2の導電性領域との間の非導電性領域と、
を有し、
前記非導電性領域は、前記第2の導電性領域に接し、
前記第2の半導体層は、前記第1の導電性領域及び前記非導電性領域に接することを特徴とする光半導体素子。 - 前記第1の導電性領域にオーミック接触する第1の金属膜と、
前記第2の導電性領域にオーミック接触する第2の金属膜と、
を有することを特徴とする請求項1に記載の光半導体素子。 - 前記第1の導電性領域は、
前記第1の金属膜と接する第3の導電性領域と、
前記非導電性領域と接する第4の導電性領域と、
を有し、
前記第3の導電性領域は前記第4の導電性領域よりも高濃度でp型不純物を含有することを特徴とする請求項2に記載の光半導体素子。 - 前記第1の半導体層の前記第2の半導体層と接する領域にリセスが形成されていることを特徴とする請求項1乃至3のいずれか1項に記載の光半導体素子。
- 平面視で前記第1の半導体層と前記第2の半導体層とが重なり合う光電変換部と、
前記光電変換部に繋がるモード変換部と、
を有し、
前記モード変換部内で、前記第1の半導体層は、前記光電変換部に近づくほど幅が広くなる平面形状を有することを特徴とする請求項1乃至4のいずれか1項に記載の光半導体素子。 - 前記第1の極性はp型であり、
前記第2の極性はn型であることを特徴とする請求項1乃至5のいずれか1項に記載の光半導体素子。 - 請求項1乃至6のいずれか1項に記載の光半導体素子を有することを特徴とする光伝送装置。
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