JP2017076651A - 半導体受光装置 - Google Patents
半導体受光装置 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 claims abstract description 42
- 230000001902 propagating effect Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 34
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- 238000010521 absorption reaction Methods 0.000 abstract 1
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- 229910004298 SiO 2 Inorganic materials 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 12
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- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 239000011574 phosphorus Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- -1 Al is low Chemical class 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
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- 238000005468 ion implantation Methods 0.000 description 1
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Abstract
【解決手段】半導体細線導波路を伝搬する光を吸収する受光部は、p型の第1半導体層と、前記p型の第1半導体層上に設けられて、i型で前記第1半導体層の屈折率及び光吸収係数よりも大きい第2半導体層とその上部にn型の第2半導体層を設けた複数の第2半導体メサ構造と、前記複数の第2半導体メサ構造の間において前記p型の第1半導体層と接続し正バイアス電源に接続されるp側電極と、前記n型の第2半導体層と接続し信号線に接続するn側電極とを備える。
【選択図】図1
Description
(付記1)基板と、前記基板上に設けられた半導体細線導波路と前記基板上に設けられて、前記半導体細線導波路を伝播する光を吸収する受光部とを有し、前記受光部は、p型の第1半導体層と、前記p型の第1半導体層上に設けられて、i型の第2半導体層の上部にn型の第2半導体層を設けた複数の第2半導体メサ構造と、前記複数の第2半導体メサ構造の間において前記p型の第1半導体層と接続するp側電極と、前記n型の第2半導体層と接続するn側電極とを有し、前記第2半導体層の屈折率及び光吸収係数が前記第1半導体層の屈折率及び光吸収係数よりも大きく、前記n側電極に正バイアス電源を接続し、前記p側電極に信号線を接続したことを特徴とする半導体受光装置。
(付記2)前記第1の半導体層が、Si層であり、前記第2の半導体層がSixGe1−x(但し、0≦x≦0.5)またはGe1−xSnx(但し、0≦x≦0.1)のいずれかであることを特徴とする付記1に記載の半導体受光装置。
(付記3)前記半導体細線導波路と前記受光部との間に、前記半導体細線導波路を伝播する光或いは光の強度ピーク位置のいずれかを前記第2半導体メサ構造の数に分岐する光分岐部をさらに有することを特徴とする付記1または付記2に記載の半導体受光装置。
(付記4)前記光分岐部が、マルチモード干渉計カプラであることを特徴とする付記3に記載の半導体受光装置。
(付記5)前記p型の第1半導体層が、前記マルチモード干渉計カプラの一部を兼ねていることを特徴とする付記4に記載の半導体受光装置。
(付記6)前記光分岐部が、方向性結合器であることを特徴とする付記3に記載の半導体受光装置。
(付記7)前記光分岐部が、分岐導波路であることを特徴とする付記3に記載の半導体受光装置。
(付記8)前記第2半導体メサ構造が、3つであることを特徴とする付記1または付記2に記載の半導体受光装置。
(付記9)前記第2半導体メサ構造が2つであり、前記半導体細線導波路が、前記第2半導体メサ構造の一方に対して第1の方向から前記光を入射する第1の半導体細線導波路と、前記第2半導体メサ構造の他方に対して前記第1の方向と反対方向の第2の方向から前記光を入射する第2の半導体細線導波路を有していることを特徴とする付記1または付記2に記載の半導体受光装置。
(付記10)前記基板が、表面に埋込絶縁層を設けた単結晶半導体基板であることを特徴とする付記1乃至付記9のいずれか1に記載の半導体受光装置。
2 単結晶半導体基板
3 埋込絶縁層
4 半導体細線導波路
5 光分岐部
6 受光部
7 p型の第1半導体層
8 第2半導体メサ構造
9 i型の第2半導体層
10 n型の第2半導体層
11 絶縁膜
12 絶縁膜
13 n側電極
14 p側電極
15 正バイアス電源
16 光
17 信号線
18 信号
20 SOI基板
21 単結晶シリコン基板
22 BOX層
23 単結晶シリコン層
24 レジストパターン
25,44,45 Si細線導波路
26,41 MMIカプラ
27 Si台座部
28 レジストパターン
29 p型Si層
30 SiO2膜
31 開口部
32 i型Ge層
33 レジストパターン
34 開口部
35 n型Ge層
36 SiO2膜
37 n側電極
38 p側電極
39 方向性結合器
40 Y型分岐導波路
42 i型SiGe層
43 p型SiGe層
50,501,502,503 双方向入射型フォトダイオード
51 入力導波路
52 偏波ビームスプリッタ
53 ループ状導波路
54 偏波ローテータ
551,552,553 リング導波路
561,562,563 出力導波路
61 単結晶Si基板
62 BOX層
63 Si細線導波路
64 テーパ導波路
65 p型シリコン層
66,69 SiO2膜
67 i型Ge層
68 n型Ge層
70 n側電極
71 p側電極
72 バイアス・ティ
73 正バイアス電源
74 負バイアス電源
75 n型Si層
76 i型Ge層
77 p型Ge層
Claims (5)
- 基板と、
前記基板上に設けられた半導体細線導波路と
前記基板上に設けられて、前記半導体細線導波路を伝播する光を吸収する受光部と
を有し、
前記受光部は、p型の第1半導体層と、前記p型の第1半導体層上に設けられて、i型の第2半導体層の上部にn型の第2半導体層を設けた複数の第2半導体メサ構造と、前記複数の第2半導体メサ構造の間において前記p型の第1半導体層と接続するp側電極と、前記n型の第2半導体層と接続するn側電極とを有し、
前記第2半導体層の屈折率及び光吸収係数が前記第1半導体層の屈折率及び光吸収係数よりも大きく、
前記n側電極に正バイアス電源を接続し、
前記p側電極に信号線を接続したことを特徴とする半導体受光装置。 - 前記第1の半導体層が、Si層であり、前記第2の半導体層がSixGe1−x(但し、0≦x≦0.5)またはGe1−xSnx(但し、0≦x≦0.1)のいずれかであることを特徴とする請求項1に記載の半導体受光装置。
- 前記半導体細線導波路と前記受光部との間に、前記半導体細線導波路を伝播する光或いは光の強度ピーク位置のいずれかを前記第2半導体メサ構造の数に分岐する光分岐部をさらに有することを特徴とする請求項1または請求項2に記載の半導体受光装置。
- 前記光分岐部が、マルチモード干渉計カプラであることを特徴とする請求項3に記載の半導体受光装置。
- 前記p型の第1半導体層が、前記マルチモード干渉計カプラの一部を兼ねていることを特徴とする請求項4に記載の半導体受光装置。
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019054029A (ja) * | 2017-09-13 | 2019-04-04 | 富士通株式会社 | 受光器、バランス型受光器、受光器の製造方法 |
JP2019186298A (ja) * | 2018-04-04 | 2019-10-24 | 国立研究開発法人産業技術総合研究所 | 光導波路型受光素子構造 |
JP2019212819A (ja) * | 2018-06-06 | 2019-12-12 | 富士通株式会社 | 光半導体素子及び光伝送装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9978890B1 (en) * | 2017-02-23 | 2018-05-22 | Cisco Technology, Inc. | Germanium multi-directional detector |
CN108447877A (zh) * | 2018-05-16 | 2018-08-24 | 广东省半导体产业技术研究院 | 平面型光敏器件及其制作方法 |
JP7443672B2 (ja) * | 2019-04-05 | 2024-03-06 | 富士通オプティカルコンポーネンツ株式会社 | 光半導体素子及び光伝送装置 |
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US11217713B2 (en) * | 2019-12-02 | 2022-01-04 | Ciena Corporation | Managing stray light absorption in integrated photonics devices |
US11460372B2 (en) * | 2020-09-03 | 2022-10-04 | Ciena Corporation | Characterizing integrated photonics devices |
US11588062B2 (en) * | 2020-10-08 | 2023-02-21 | Globalfoundries U.S. Inc. | Photodetectors including a coupling region with multiple tapers |
CN114864730A (zh) * | 2021-02-04 | 2022-08-05 | 迈络思科技有限公司 | 高调制速度pin型光电二极管 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60134611A (ja) * | 1983-12-23 | 1985-07-17 | Sumitomo Electric Ind Ltd | 光電変換回路 |
US20110049660A1 (en) * | 2009-08-31 | 2011-03-03 | Electronics And Telecommunications Research Institute | Waveguide photo-detector |
WO2012132907A1 (ja) * | 2011-03-28 | 2012-10-04 | 古河電気工業株式会社 | 光導波路回路 |
JP2014170823A (ja) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | 半導体集積受光デバイス |
WO2014147821A1 (ja) * | 2013-03-22 | 2014-09-25 | 富士通株式会社 | 波長多重光受信器 |
JP2014192472A (ja) * | 2013-03-28 | 2014-10-06 | Fujitsu Ltd | Si光集積回路装置及びその製造方法 |
JP2014228639A (ja) * | 2013-05-21 | 2014-12-08 | 日本電信電話株式会社 | 光増幅装置 |
JP2015162571A (ja) * | 2014-02-27 | 2015-09-07 | 富士通株式会社 | Ge系半導体装置、その製造方法及び光インターコネクトシステム |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008088018A1 (ja) * | 2007-01-18 | 2008-07-24 | Nec Corporation | 半導体受光素子 |
JP5742344B2 (ja) * | 2011-03-20 | 2015-07-01 | 富士通株式会社 | 受光素子、光受信器及び光受信モジュール |
JP6048578B2 (ja) * | 2013-04-19 | 2016-12-21 | 富士通株式会社 | 半導体受光素子及びその製造方法 |
US9244327B2 (en) * | 2013-04-26 | 2016-01-26 | Teraxion Inc. | Mach-Zehnder modulator with backplane voltage equalization |
US9344200B2 (en) * | 2014-10-08 | 2016-05-17 | International Business Machines Corporation | Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth |
JP6875987B2 (ja) * | 2014-11-18 | 2021-05-26 | ダブリュアンドダブリュセンス デバイシーズ, インコーポレイテッドW&Wsens Devices, Inc. | マイクロストラクチャ向上型吸収感光装置 |
JP2016184680A (ja) * | 2015-03-26 | 2016-10-20 | 住友電気工業株式会社 | 半導体光素子 |
-
2015
- 2015-10-13 JP JP2015202027A patent/JP2017076651A/ja active Pending
-
2016
- 2016-10-04 US US15/284,920 patent/US9735296B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60134611A (ja) * | 1983-12-23 | 1985-07-17 | Sumitomo Electric Ind Ltd | 光電変換回路 |
US20110049660A1 (en) * | 2009-08-31 | 2011-03-03 | Electronics And Telecommunications Research Institute | Waveguide photo-detector |
WO2012132907A1 (ja) * | 2011-03-28 | 2012-10-04 | 古河電気工業株式会社 | 光導波路回路 |
JP2014170823A (ja) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | 半導体集積受光デバイス |
WO2014147821A1 (ja) * | 2013-03-22 | 2014-09-25 | 富士通株式会社 | 波長多重光受信器 |
JP2014192472A (ja) * | 2013-03-28 | 2014-10-06 | Fujitsu Ltd | Si光集積回路装置及びその製造方法 |
JP2014228639A (ja) * | 2013-05-21 | 2014-12-08 | 日本電信電話株式会社 | 光増幅装置 |
JP2015162571A (ja) * | 2014-02-27 | 2015-09-07 | 富士通株式会社 | Ge系半導体装置、その製造方法及び光インターコネクトシステム |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019054029A (ja) * | 2017-09-13 | 2019-04-04 | 富士通株式会社 | 受光器、バランス型受光器、受光器の製造方法 |
JP7087308B2 (ja) | 2017-09-13 | 2022-06-21 | 富士通株式会社 | 受光器、バランス型受光器、受光器の製造方法 |
JP2019186298A (ja) * | 2018-04-04 | 2019-10-24 | 国立研究開発法人産業技術総合研究所 | 光導波路型受光素子構造 |
JP7062276B2 (ja) | 2018-04-04 | 2022-05-06 | 国立研究開発法人産業技術総合研究所 | 光導波路型受光素子構造 |
JP2019212819A (ja) * | 2018-06-06 | 2019-12-12 | 富士通株式会社 | 光半導体素子及び光伝送装置 |
JP7125822B2 (ja) | 2018-06-06 | 2022-08-25 | 富士通オプティカルコンポーネンツ株式会社 | 光半導体素子及び光伝送装置 |
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