JP2016111363A - ゲルマニウム層コンタクトが無いシリコン上ゲルマニウム光検出器のための方法及びシステム - Google Patents
ゲルマニウム層コンタクトが無いシリコン上ゲルマニウム光検出器のための方法及びシステム Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 170
- 239000010703 silicon Substances 0.000 title claims abstract description 170
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 130
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 127
- 230000003287 optical effect Effects 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 167
- 229910052751 metal Inorganic materials 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 238000004891 communication Methods 0.000 claims description 5
- 238000013459 approach Methods 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 description 14
- 239000000835 fiber Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000013307 optical fiber Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 230000005684 electric field Effects 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- DFXZOVNXZVSTLY-UHFFFAOYSA-N [Si+4].[GeH3+]=O Chemical compound [Si+4].[GeH3+]=O DFXZOVNXZVSTLY-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022416—Electrodes for devices characterised by at least one potential jump barrier or surface barrier comprising ring electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/1812—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only AIVBIV alloys, e.g. SiGe
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4292—Coupling light guides with opto-electronic elements the light guide being disconnectable from the opto-electronic element, e.g. mutually self aligning arrangements
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
Description
Claims (20)
- 光通信のための方法であって、当該方法は、N型シリコン層、ゲルマニウム層、P型シリコン層、及び前記N型シリコン層と前記P型シリコン層それぞれ上の金属コンタクトを備える光検出器を有する半導体ダイにおいて、
光信号を受け取り;
前記ゲルマニウム層において光信号を吸収し;
吸収した光信号から電気信号を生成し;及び
前記N型シリコン層及びP型シリコン層を介して前記光検出器外に電気信号を伝送することを含む、方法。 - 前記光検出器が水平接合ダブルヘテロ構造を備え、前記ゲルマニウム層が前記N型シリコン層及びP型シリコン層の上方にある、請求項1に記載の方法。
- i型ドープシリコン層が、前記N型シリコン層と前記P型シリコン層の間で前記ゲルマニウム層の下方にある、請求項2に記載の方法。
- 前記P型シリコン層に最も近い前記ゲルマニウム層の部分がP型ドープされる、請求項2に記載の方法。
- 前記光検出器は、垂直接合ダブルヘテロ構造を備え、前記ゲルマニウム層が低濃度N型シリコン層の上方にある、請求項1に記載の方法。
- 前記N型シリコン層及びP型シリコン層は、前記ゲルマニウム層の下方の低濃度シリコン層の両側にあり、前記P型シリコン層と前記低濃度N型シリコン層が前記ゲルマニウム層とコンタクトし、前記N型シリコン層がコンタクトしない、請求項5に記載の方法。
- 前記ゲルマニウム層の上部がP型にドープされる、請求項5に記載の方法。
- 前記光検出器は、表面照射型ダブルヘテロ構造光検出器を備える、請求項1に記載の方法。
- 前記表面照射型ダブルヘテロ構造光検出器における前記N型シリコン層及び前記P型シリコン層は、交互に組まれた指部を備える、請求項8に記載の方法。
- 前記表面照射型ダブルヘテロ構造光検出器における前記N型シリコン層及び前記P型シリコン層が、前記表面照射型ダブルヘテロ構造光検出器の外端部でリング状構造を備える、請求項8に記載の方法。
- 通信のためのシステムであって、当該システムが、光検出器を有する半導体ダイを備え、前記光検出器は、N型シリコン層、ゲルマニウム層、P型シリコン層、及び前記N型シリコン層と前記P型シリコン層それぞれ上の金属コンタクトを備え、
前記光検出器は、
光信号を受け取り;
前記ゲルマニウム層において光信号を吸収し;
吸収した光信号から電気信号を生成し;及び
前記N型シリコン層及びP型シリコン層を介して前記光検出器外に電気信号を伝送するように動作可能である、システム。 - 前記光検出器が水平接合ダブルヘテロ構造を備え、前記ゲルマニウム層が前記N型シリコン層及びP型シリコン層の上方にある、請求項11に記載のシステム。
- i型ドープシリコン層が、前記N型シリコン層と前記P型シリコン層の間で前記ゲルマニウム層の下方にある、請求項12に記載のシステム。
- 前記P型シリコン層に最も近い前記ゲルマニウム層の部分がP型ドープされる、請求項12に記載のシステム。
- 前記光検出器は、垂直接合ダブルヘテロ構造を備え、前記ゲルマニウム層が低濃度N型シリコン層の上方にある、請求項11に記載のシステム。
- 前記N型シリコン層及びP型シリコン層は、前記ゲルマニウム層の下方の低濃度シリコン層の両側にあり、前記P型シリコン層と前記低濃度N型シリコン層が前記ゲルマニウム層とコンタクトし、前記N型シリコン層がコンタクトしない、請求項15に記載のシステム。
- 前記ゲルマニウム層の上部がP型にドープされる、請求項15に記載のシステム。
- 前記光検出器は、表面照射型ダブルヘテロ構造光検出器を備え、前記表面照射型ダブルヘテロ構造光検出器における前記N型シリコン層及び前記P型シリコン層は、交互に組まれた指部を備える、請求項11に記載のシステム。
- 前記光検出器は、表面照射型ダブルヘテロ構造光検出器を備え、前記表面照射型ダブルヘテロ構造光検出器における前記N型シリコン層及び前記P型シリコン層は、前記表面照射型ダブルヘテロ構造光検出器の外端部でリング状構造を備える、請求項18に記載のシステム。
- 通信のためのシステムであって、当該システムは、
ダブルヘテロ構造光検出器を有する半導体ダイを備え、
前記ダブルヘテロ構造光検出器は、N型シリコン層、ゲルマニウム層の一部にP型ドーピングされたゲルマニウム層、P型シリコン層、及び前記N型シリコン層と前記P型シリコン層それぞれ上の金属コンタクトを備え、
前記ダブルヘテロ構造光検出器は、
光信号を受け取り;
前記ゲルマニウム層において光信号を吸収し;
吸収した光信号から電気信号を生成し;及び
前記N型シリコン層及びP型シリコン層を介して前記光検出器外に電気信号を伝送するように動作可能である、システム。
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US201462086137P | 2014-12-01 | 2014-12-01 | |
US62/086,137 | 2014-12-01 | ||
US14/926,916 US10546963B2 (en) | 2014-12-01 | 2015-10-29 | Method and system for germanium-on-silicon photodetectors without germanium layer contacts |
US14/926,916 | 2015-10-29 |
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Cited By (7)
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JP2018082089A (ja) * | 2016-11-17 | 2018-05-24 | 日本電信電話株式会社 | 光検出器 |
JP6335349B1 (ja) * | 2017-02-10 | 2018-05-30 | 沖電気工業株式会社 | 受光素子 |
JP2019140153A (ja) * | 2018-02-06 | 2019-08-22 | 沖電気工業株式会社 | 半導体受光素子、光電融合モジュール、半導体受光素子の製造方法 |
WO2020044952A1 (ja) * | 2018-08-28 | 2020-03-05 | 日本電信電話株式会社 | 半導体受光器 |
JP2020170819A (ja) * | 2019-04-05 | 2020-10-15 | 富士通株式会社 | 光半導体素子及び光伝送装置 |
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US20200161482A1 (en) | 2020-05-21 |
US11217710B2 (en) | 2022-01-04 |
US10546963B2 (en) | 2020-01-28 |
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EP3029728B1 (en) | 2023-04-19 |
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CN105762220A (zh) | 2016-07-13 |
TWI660595B (zh) | 2019-05-21 |
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TWI791108B (zh) | 2023-02-01 |
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