JP2018142751A - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP2018142751A JP2018142751A JP2018120129A JP2018120129A JP2018142751A JP 2018142751 A JP2018142751 A JP 2018142751A JP 2018120129 A JP2018120129 A JP 2018120129A JP 2018120129 A JP2018120129 A JP 2018120129A JP 2018142751 A JP2018142751 A JP 2018142751A
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- 229910052732 germanium Inorganic materials 0.000 claims abstract description 172
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 172
- 239000010410 layer Substances 0.000 claims abstract description 123
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 81
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 81
- 239000010703 silicon Substances 0.000 claims abstract description 81
- 239000012792 core layer Substances 0.000 claims abstract description 39
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims abstract description 9
- 238000005253 cladding Methods 0.000 claims description 15
- 230000007423 decrease Effects 0.000 abstract description 3
- 230000003287 optical effect Effects 0.000 description 9
- 239000013078 crystal Substances 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- Electromagnetism (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】シリコン基板と、シリコン基板上に形成された下部クラッド層と、下部クラッド層上に形成されたコア層(210)と、コア層(210)の一部に形成されたp型不純物イオンがドーピングされたp型シリコンスラブ(211)、およびp型不純物が高濃度にドーピングされ、電極として作用するp++シリコン電極部(212、213)と、光を吸収するゲルマニウム層(241、242)を備える。さらに、上部クラッド層、ゲルマニウム層の上部のn型不純物がドーピングされたn型ゲルマニウム領域、および電極を備える。本発明は、p型シリコンスラブ(211)上に2つのゲルマニウム層(241、242)を備えることにより、個々のゲルマニウム層のp型シリコンスラブ(211)と接する面積を小型化することで、貫通転位に起因する暗電流を削減することが出来る。
【選択図】図5
Description
図5は、本発明の実施形態1に係るゲルマニウム光検出器200の上部クラッド層、ゲルマニウム層の上部のn型不純物がドーピングされたn型ゲルマニウム領域、および電極を省いた平面図である。また図6は図5のVI−VIの断面図であり、図7は図5のVII−VIIの断面図であり、図8は図5のVIII−VIIIの断面図である。
図9は、本発明の実施形態2に係るゲルマニウム光検出器300の上部クラッド層、ゲルマニウム層の上部のn型不純物がドーピングされたn型ゲルマニウム領域、および電極を省いた平面図である。また図10は、図9のX−Xの断面図である。
図11は、本発明の実施形態3に係るゲルマニウム光検出器400の上部クラッド層、ゲルマニウム層の上部のn型不純物がドーピングされたn型ゲルマニウム領域、および電極を省いた平面図である。
図12は、本発明の実施形態4に係るゲルマニウム光検出器500の上部クラッド層、ゲルマニウム層の上部のn型不純物がドーピングされたn型ゲルマニウム領域、および電極を省いた平面図である。図13に、図12のXIII−XIIIの断面を示す。本実施形態は、実施形態2に対して、ゲルマニウム層251、252、・・・、25n(n:正の整数)およびn型ゲルマニウム領域225−1、225−2、・・・、225−nの大きさが均一でない構成を特徴としている。図12,13には、一例としてゲルマニウム層251、252、・・・、25nおよびn型ゲルマニウム領域225−1、225−2、・・・、225−nが入力端側から徐々に小さくなる構成を示している。
図14A、図14Bは、本発明の実施形態5に係るゲルマニウム光検出器600、700の上部クラッド層、ゲルマニウム層の上部のn型不純物がドーピングされたn型ゲルマニウム領域、および電極を省いた平面図である。本実施形態は、コア層210が複数の入力導波路部を備え、入射光を分岐して複数の入力導波路部から入射する構成を特徴としている。本実施形態の構成は、コア層210が複数の入力導波路部を備えている点以外は実施形態2,3と同じである。図14A、図14Bには複数の入力導波路部を備えた構成の一例を示しているが、複数の入力導波路部の位置はこれらに限らず、任意の位置に設けることが可能である。尚、本実施形態に係るゲルマニウム光検出器は、分布定数回路のように電気信号と光信号の間で速度整合を取るための回路を必要としない、集中定数回路である。
101、201 シリコン基板
102、202 下部クラッド層
103、203 上部クラッド層
110、210 コア層
111、211 p型シリコンスラブ
112、113、212、213 p++シリコン電極部
114、241〜2mn、251〜25n ゲルマニウム層
115、215−1〜215(n×m)、225−1〜225−n n型ゲルマニウム領域
116〜118、216〜218 電極
Claims (7)
- シリコン基板と、
前記シリコン基板上に形成された下部クラッド層と、
前記下部クラッド層上に形成され、p型不純物イオンがドーピングされたp型シリコンスラブを含むコア層と、
前記p型シリコンスラブ上に形成され、n型不純物がドーピングされたn型ゲルマニウム領域を含むゲルマニウム層と、
前記コア層および前記ゲルマニウム層上に形成された上部クラッド層と、
前記p型シリコンスラブおよび前記n型ゲルマニウム領域にそれぞれ接続された電極と
を備え、前記ゲルマニウム層は、前記p型シリコンスラブと接する面が複数あることを特徴する光検出器。 - 前記ゲルマニウム層は、前記p型シリコンスラブと接する複数の面に対応する前記n型ゲルマニウム領域が複数あり、
前記電極は、前記複数のn型ゲルマニウム領域に共通する前記p型シリコンスラブと接続された少なくとも1つの第1の電極と、前記複数のn型ゲルマニウム領域と接続された1つの第2の電極とを含む1組の電極からなることを特徴とする請求項1に記載の光検出器。 - 前記コア層は、複数の入力導波路部を含むことを特徴とする請求項1に記載の光検出器。
- 前記ゲルマニウム層の前記p型シリコンスラブと接する複数の面は、それぞれ面積が異なることを特徴とする請求項1に記載の光検出器。
- 前記p型シリコンスラブは、前記ゲルマニウム層の両側にp型不純物が高濃度にドーピングされたp++シリコン電極部を含み、
前記p型シリコンスラブに接続された電極は、前記p++シリコン電極部に接していることを特徴とする請求項1に記載の光検出器。 - 前記ゲルマニウム層の前記p型シリコンスラブと接する面は、光の進行方向に対して直列に配置されていることを特徴とする請求項1に記載の光検出器。
- 前記ゲルマニウム層の前記p型シリコンスラブと接する面は、光の進行方向に対して並列に配置されていることを特徴とする請求項1に記載の光検出器。
Applications Claiming Priority (2)
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JP2015169779 | 2015-08-28 | ||
JP2015169779 | 2015-08-28 |
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JP2017537537A Division JPWO2017038072A1 (ja) | 2015-08-28 | 2016-08-26 | 光検出器 |
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JP2018142751A true JP2018142751A (ja) | 2018-09-13 |
JP6560795B2 JP6560795B2 (ja) | 2019-08-14 |
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JP2018120129A Active JP6560795B2 (ja) | 2015-08-28 | 2018-06-25 | 光検出器 |
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US (1) | US10720543B2 (ja) |
EP (1) | EP3343641B1 (ja) |
JP (2) | JPWO2017038072A1 (ja) |
CN (1) | CN107924961B (ja) |
CA (1) | CA2995668C (ja) |
SG (1) | SG11201801176SA (ja) |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP6867868B2 (ja) * | 2017-05-15 | 2021-05-12 | 日本電信電話株式会社 | 光検出器 |
JP7087308B2 (ja) * | 2017-09-13 | 2022-06-21 | 富士通株式会社 | 受光器、バランス型受光器、受光器の製造方法 |
JP2019078908A (ja) * | 2017-10-25 | 2019-05-23 | 日本電信電話株式会社 | 光モニタ回路 |
CN108447938B (zh) * | 2018-02-27 | 2019-12-20 | 中国科学院微电子研究所 | 光电探测器 |
JP7062276B2 (ja) * | 2018-04-04 | 2022-05-06 | 国立研究開発法人産業技術総合研究所 | 光導波路型受光素子構造 |
JP6981365B2 (ja) * | 2018-05-17 | 2021-12-15 | 日本電信電話株式会社 | 光検出器 |
JP7125822B2 (ja) * | 2018-06-06 | 2022-08-25 | 富士通オプティカルコンポーネンツ株式会社 | 光半導体素子及び光伝送装置 |
JP7212254B2 (ja) | 2019-01-16 | 2023-01-25 | 日本電信電話株式会社 | 光検出器 |
WO2023248369A1 (ja) * | 2022-06-22 | 2023-12-28 | 日本電信電話株式会社 | 光検出器 |
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JP2014192472A (ja) * | 2013-03-28 | 2014-10-06 | Fujitsu Ltd | Si光集積回路装置及びその製造方法 |
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- 2016-08-26 CN CN201680048167.2A patent/CN107924961B/zh active Active
- 2016-08-26 EP EP16841106.4A patent/EP3343641B1/en active Active
- 2016-08-26 WO PCT/JP2016/003907 patent/WO2017038072A1/ja active Application Filing
- 2016-08-26 JP JP2017537537A patent/JPWO2017038072A1/ja not_active Ceased
- 2016-08-28 US US15/751,795 patent/US10720543B2/en active Active
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Patent Citations (6)
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JP2001068717A (ja) * | 1999-08-25 | 2001-03-16 | Nippon Telegr & Teleph Corp <Ntt> | 進行波型半導体光検出器 |
US20030102469A1 (en) * | 2001-11-30 | 2003-06-05 | Jones Robert E. | Semiconductor device and method therefor |
WO2009110632A1 (ja) * | 2008-03-07 | 2009-09-11 | 日本電気株式会社 | SiGeフォトダイオード |
JP5370857B2 (ja) * | 2010-03-04 | 2013-12-18 | 日本電信電話株式会社 | ゲルマニウム受光器およびその製造方法 |
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JP2014192472A (ja) * | 2013-03-28 | 2014-10-06 | Fujitsu Ltd | Si光集積回路装置及びその製造方法 |
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