JP2017157736A - 受光素子を有する半導体装置 - Google Patents
受光素子を有する半導体装置 Download PDFInfo
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- JP2017157736A JP2017157736A JP2016041127A JP2016041127A JP2017157736A JP 2017157736 A JP2017157736 A JP 2017157736A JP 2016041127 A JP2016041127 A JP 2016041127A JP 2016041127 A JP2016041127 A JP 2016041127A JP 2017157736 A JP2017157736 A JP 2017157736A
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- oxide film
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- light receiving
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/1461—Pixel-elements with integrated switching, control, storage or amplification elements characterised by the photosensitive area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】P型半導体基板11の上面に複数のフォトダイオード51を形成し、フォトダイオード51の表面には埋め込み酸化膜を介して絶縁酸化膜31を設け、フォトダイオードと隣接するフォトダイオードとの間に埋め込み酸化膜12を介してSOI層13を設けることで斜入射などの不要な光を遮光する。
【選択図】図2
Description
第1導電型半導体基板の上面に形成された第2導電型層領域と前記第1導電型半導体基板から形成されたPN接合によるフォトダイオードをからなる受光素子を有する半導体装置において、前記フォトダイオード上には酸化膜が設けられ、前記フォトダイオードと隣接するフォトダイオードとの間には埋め込み酸化膜を介して単結晶シリコンからなるSOI層が設けられていることを特徴とする受光素子を有する半導体装置とした。
なお、図2においては、上層の配線等は省略しているが、遮光用に配線を用いることがないため、配線レイアウトの自由度は高い。
Log10(J1/J0)=−αL
J0:媒質に入射する前の光の強度
J1:媒質を移動した時の光の強度
L:光の到達深さ
α:吸収係数
10 SOI基板
11 P型半導体基板
12 埋め込み酸化膜
13 SOI層
21 N型層領域
22 高濃度N型半導体領域
23 高濃度P型半導体領域
31 絶縁酸化膜
41 カソード電極
42 アノード電極
51 フォトダイオード
L1 入射光
Claims (5)
- 第1導電型半導体基板の上面に形成された第2導電型層領域と前記第1導電型半導体基板からなるPN接合によるフォトダイオードを複数備えた受光素子を有する半導体装置であって、
前記フォトダイオードと隣接するフォトダイオードとの間に、埋め込み酸化膜を介して前記第1導電型半導体基板の上に設けられた単結晶シリコンからなるSOI層と、
前記フォトダイオードおよび前記SOI層の上に設けられた酸化膜と、を有することを特徴とする受光素子を有する半導体装置。 - 前記SOI層の厚さが遮光する光の到達深さよりも厚いことを特徴とする請求項1記載の受光素子を有する半導体装置。
- 平面視的に前記SOI層が前記フォトダイオードと重なることを特徴とする請求項1または2記載の受光素子を有する半導体装置。
- 前記酸化膜が前記埋め込み酸化膜および前記埋め込み酸化膜上に形成された絶縁酸化膜からなることを特徴とする請求項1乃至3のいずれか1項記載の受光素子を有する半導体装置。
- 前記酸化膜が絶縁酸化膜からなることを特徴とする請求項1乃至3のいずれか1項記載の受光素子を有する半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016041127A JP6736315B2 (ja) | 2016-03-03 | 2016-03-03 | 受光素子を有する半導体装置 |
KR1020170025447A KR20170103659A (ko) | 2016-03-03 | 2017-02-27 | 수광 소자를 갖는 반도체 장치 |
US15/446,229 US9947706B2 (en) | 2016-03-03 | 2017-03-01 | Semiconductor device having a light receiving element |
CN201710119570.6A CN107154413A (zh) | 2016-03-03 | 2017-03-02 | 具有受光元件的半导体装置 |
TW106106769A TWI709236B (zh) | 2016-03-03 | 2017-03-02 | 具有受光構件的半導體裝置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016041127A JP6736315B2 (ja) | 2016-03-03 | 2016-03-03 | 受光素子を有する半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017157736A true JP2017157736A (ja) | 2017-09-07 |
JP6736315B2 JP6736315B2 (ja) | 2020-08-05 |
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Application Number | Title | Priority Date | Filing Date |
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JP2016041127A Expired - Fee Related JP6736315B2 (ja) | 2016-03-03 | 2016-03-03 | 受光素子を有する半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9947706B2 (ja) |
JP (1) | JP6736315B2 (ja) |
KR (1) | KR20170103659A (ja) |
CN (1) | CN107154413A (ja) |
TW (1) | TWI709236B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109904272B (zh) * | 2019-01-23 | 2021-02-09 | 杭州电子科技大学 | 一种高转换增益和低串扰的像素探测器 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173351A (ja) * | 2004-12-15 | 2006-06-29 | Sony Corp | 裏面入射型固体撮像装置及びその製造方法 |
US20070012970A1 (en) * | 2005-07-12 | 2007-01-18 | Micron Technology, Inc. | Image sensor with SOI substrate |
JP2007017961A (ja) * | 2005-06-08 | 2007-01-25 | Canon Inc | 近接場露光用マスク、該マスクの製造方法、該マスクを備えた近接場露光装置及びレジストパターンの形成方法 |
JP2009081201A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 裏面照射型撮像装置の製造方法 |
JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
WO2015004867A1 (ja) * | 2013-07-12 | 2015-01-15 | シャープ株式会社 | 放射線検出用半導体装置 |
JP2015220255A (ja) * | 2014-05-14 | 2015-12-07 | 日本放送協会 | 裏面照射型cmos型撮像素子、及び、裏面照射型cmos型撮像素子の製造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100720504B1 (ko) * | 2005-09-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
JP5385564B2 (ja) | 2008-08-18 | 2014-01-08 | ラピスセミコンダクタ株式会社 | 半導体装置及びその製造方法 |
US8278690B2 (en) * | 2010-04-27 | 2012-10-02 | Omnivision Technologies, Inc. | Laser anneal for image sensors |
JP5983076B2 (ja) * | 2012-06-15 | 2016-08-31 | 三菱電機株式会社 | フォトダイオードアレイ |
-
2016
- 2016-03-03 JP JP2016041127A patent/JP6736315B2/ja not_active Expired - Fee Related
-
2017
- 2017-02-27 KR KR1020170025447A patent/KR20170103659A/ko unknown
- 2017-03-01 US US15/446,229 patent/US9947706B2/en not_active Expired - Fee Related
- 2017-03-02 CN CN201710119570.6A patent/CN107154413A/zh active Pending
- 2017-03-02 TW TW106106769A patent/TWI709236B/zh not_active IP Right Cessation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173351A (ja) * | 2004-12-15 | 2006-06-29 | Sony Corp | 裏面入射型固体撮像装置及びその製造方法 |
JP2007017961A (ja) * | 2005-06-08 | 2007-01-25 | Canon Inc | 近接場露光用マスク、該マスクの製造方法、該マスクを備えた近接場露光装置及びレジストパターンの形成方法 |
US20070012970A1 (en) * | 2005-07-12 | 2007-01-18 | Micron Technology, Inc. | Image sensor with SOI substrate |
JP2009081201A (ja) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | 裏面照射型撮像装置の製造方法 |
JP2011086709A (ja) * | 2009-10-14 | 2011-04-28 | Toshiba Corp | 固体撮像装置及びその製造方法 |
WO2015004867A1 (ja) * | 2013-07-12 | 2015-01-15 | シャープ株式会社 | 放射線検出用半導体装置 |
JP2015220255A (ja) * | 2014-05-14 | 2015-12-07 | 日本放送協会 | 裏面照射型cmos型撮像素子、及び、裏面照射型cmos型撮像素子の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20170256579A1 (en) | 2017-09-07 |
US9947706B2 (en) | 2018-04-17 |
CN107154413A (zh) | 2017-09-12 |
TW201801298A (zh) | 2018-01-01 |
KR20170103659A (ko) | 2017-09-13 |
JP6736315B2 (ja) | 2020-08-05 |
TWI709236B (zh) | 2020-11-01 |
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