SG11201801176SA - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- SG11201801176SA SG11201801176SA SG11201801176SA SG11201801176SA SG11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA
- Authority
- SG
- Singapore
- Prior art keywords
- photodetector
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015169779 | 2015-08-28 | ||
PCT/JP2016/003907 WO2017038072A1 (en) | 2015-08-28 | 2016-08-26 | Photodetector |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201801176SA true SG11201801176SA (en) | 2018-03-28 |
Family
ID=58186920
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201801176SA SG11201801176SA (en) | 2015-08-28 | 2016-08-26 | Photodetector |
Country Status (7)
Country | Link |
---|---|
US (1) | US10720543B2 (en) |
EP (1) | EP3343641B1 (en) |
JP (2) | JPWO2017038072A1 (en) |
CN (1) | CN107924961B (en) |
CA (1) | CA2995668C (en) |
SG (1) | SG11201801176SA (en) |
WO (1) | WO2017038072A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6867868B2 (en) * | 2017-05-15 | 2021-05-12 | 日本電信電話株式会社 | Photodetector |
JP7087308B2 (en) * | 2017-09-13 | 2022-06-21 | 富士通株式会社 | Manufacturing method of photoreceiver, balanced photoreceiver, and photoreceiver |
JP2019078908A (en) * | 2017-10-25 | 2019-05-23 | 日本電信電話株式会社 | Light monitor circuit |
CN108447938B (en) * | 2018-02-27 | 2019-12-20 | 中国科学院微电子研究所 | Photoelectric detector |
JP7062276B2 (en) * | 2018-04-04 | 2022-05-06 | 国立研究開発法人産業技術総合研究所 | Optical waveguide type light receiving element structure |
JP6981365B2 (en) * | 2018-05-17 | 2021-12-15 | 日本電信電話株式会社 | Photodetector |
JP7125822B2 (en) * | 2018-06-06 | 2022-08-25 | 富士通オプティカルコンポーネンツ株式会社 | Optical semiconductor device and optical transmission device |
JP7212254B2 (en) | 2019-01-16 | 2023-01-25 | 日本電信電話株式会社 | photodetector |
WO2023248369A1 (en) * | 2022-06-22 | 2023-12-28 | 日本電信電話株式会社 | Photodetector |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001068717A (en) * | 1999-08-25 | 2001-03-16 | Nippon Telegr & Teleph Corp <Ntt> | Traveling wave semiconductor photodetector |
US6576532B1 (en) * | 2001-11-30 | 2003-06-10 | Motorola Inc. | Semiconductor device and method therefor |
US7453132B1 (en) * | 2002-06-19 | 2008-11-18 | Luxtera Inc. | Waveguide photodetector with integrated electronics |
JP5232981B2 (en) | 2008-03-07 | 2013-07-10 | 日本電気株式会社 | SiGe photodiode |
US8330242B2 (en) * | 2008-03-28 | 2012-12-11 | Nec Corporation | Semiconductor light-receiving element |
US8346025B2 (en) * | 2009-05-18 | 2013-01-01 | Alcatel Lucent | Compact electrooptic modulator |
JP5370857B2 (en) * | 2010-03-04 | 2013-12-18 | 日本電信電話株式会社 | GERMANIUM RECEIVER AND MANUFACTURING METHOD THEREOF |
EP2736084B1 (en) | 2012-11-22 | 2018-09-19 | IMEC vzw | Avalanche photodetector element with increased electric field strength |
US9666736B2 (en) * | 2013-01-30 | 2017-05-30 | Agency For Science, Technology And Research | Photodetector arrangement |
JP6020295B2 (en) * | 2013-03-28 | 2016-11-02 | 富士通株式会社 | Si optical integrated circuit device and manufacturing method thereof |
CN105810774B (en) * | 2016-03-30 | 2018-05-22 | 华中科技大学 | A kind of big bandwidth germanium silicon photodetector of high power |
-
2016
- 2016-08-26 SG SG11201801176SA patent/SG11201801176SA/en unknown
- 2016-08-26 WO PCT/JP2016/003907 patent/WO2017038072A1/en active Application Filing
- 2016-08-26 EP EP16841106.4A patent/EP3343641B1/en active Active
- 2016-08-26 JP JP2017537537A patent/JPWO2017038072A1/en not_active Ceased
- 2016-08-26 CA CA2995668A patent/CA2995668C/en active Active
- 2016-08-26 CN CN201680048167.2A patent/CN107924961B/en active Active
- 2016-08-28 US US15/751,795 patent/US10720543B2/en active Active
-
2018
- 2018-06-25 JP JP2018120129A patent/JP6560795B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JPWO2017038072A1 (en) | 2017-12-14 |
CN107924961B (en) | 2020-03-03 |
JP6560795B2 (en) | 2019-08-14 |
CA2995668A1 (en) | 2017-03-09 |
EP3343641B1 (en) | 2021-03-17 |
US10720543B2 (en) | 2020-07-21 |
CN107924961A (en) | 2018-04-17 |
WO2017038072A1 (en) | 2017-03-09 |
JP2018142751A (en) | 2018-09-13 |
EP3343641A1 (en) | 2018-07-04 |
CA2995668C (en) | 2020-12-01 |
EP3343641A4 (en) | 2019-05-15 |
US20180233618A1 (en) | 2018-08-16 |
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