SG11201801176SA - Photodetector - Google Patents

Photodetector

Info

Publication number
SG11201801176SA
SG11201801176SA SG11201801176SA SG11201801176SA SG11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA SG 11201801176S A SG11201801176S A SG 11201801176SA
Authority
SG
Singapore
Prior art keywords
photodetector
Prior art date
Application number
SG11201801176SA
Other languages
English (en)
Inventor
Hiroshi Fukuda
Shin Kamei
Ken Tsuzuki
Makoto Jizodo
Kiyofumi Kikuchi
Original Assignee
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph & Telephone filed Critical Nippon Telegraph & Telephone
Publication of SG11201801176SA publication Critical patent/SG11201801176SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
SG11201801176SA 2015-08-28 2016-08-26 Photodetector SG11201801176SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015169779 2015-08-28
PCT/JP2016/003907 WO2017038072A1 (ja) 2015-08-28 2016-08-26 光検出器

Publications (1)

Publication Number Publication Date
SG11201801176SA true SG11201801176SA (en) 2018-03-28

Family

ID=58186920

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201801176SA SG11201801176SA (en) 2015-08-28 2016-08-26 Photodetector

Country Status (7)

Country Link
US (1) US10720543B2 (ja)
EP (1) EP3343641B1 (ja)
JP (2) JPWO2017038072A1 (ja)
CN (1) CN107924961B (ja)
CA (1) CA2995668C (ja)
SG (1) SG11201801176SA (ja)
WO (1) WO2017038072A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6867868B2 (ja) * 2017-05-15 2021-05-12 日本電信電話株式会社 光検出器
JP7087308B2 (ja) * 2017-09-13 2022-06-21 富士通株式会社 受光器、バランス型受光器、受光器の製造方法
JP2019078908A (ja) * 2017-10-25 2019-05-23 日本電信電話株式会社 光モニタ回路
CN108447938B (zh) * 2018-02-27 2019-12-20 中国科学院微电子研究所 光电探测器
JP7062276B2 (ja) * 2018-04-04 2022-05-06 国立研究開発法人産業技術総合研究所 光導波路型受光素子構造
JP6981365B2 (ja) * 2018-05-17 2021-12-15 日本電信電話株式会社 光検出器
JP7125822B2 (ja) * 2018-06-06 2022-08-25 富士通オプティカルコンポーネンツ株式会社 光半導体素子及び光伝送装置
JP7212254B2 (ja) * 2019-01-16 2023-01-25 日本電信電話株式会社 光検出器
WO2023248369A1 (ja) * 2022-06-22 2023-12-28 日本電信電話株式会社 光検出器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001068717A (ja) * 1999-08-25 2001-03-16 Nippon Telegr & Teleph Corp <Ntt> 進行波型半導体光検出器
US6576532B1 (en) * 2001-11-30 2003-06-10 Motorola Inc. Semiconductor device and method therefor
US7453132B1 (en) * 2002-06-19 2008-11-18 Luxtera Inc. Waveguide photodetector with integrated electronics
US8269303B2 (en) 2008-03-07 2012-09-18 Nec Corporation SiGe photodiode
JP5234104B2 (ja) * 2008-03-28 2013-07-10 日本電気株式会社 半導体受光素子
US8346025B2 (en) * 2009-05-18 2013-01-01 Alcatel Lucent Compact electrooptic modulator
JP5370857B2 (ja) * 2010-03-04 2013-12-18 日本電信電話株式会社 ゲルマニウム受光器およびその製造方法
EP2736084B1 (en) 2012-11-22 2018-09-19 IMEC vzw Avalanche photodetector element with increased electric field strength
SG11201505416QA (en) * 2013-01-30 2015-08-28 Agency Science Tech & Res Photodetector arrangement
JP6020295B2 (ja) * 2013-03-28 2016-11-02 富士通株式会社 Ｓｉ光集積回路装置及びその製造方法
CN105810774B (zh) * 2016-03-30 2018-05-22 华中科技大学 一种高功率大带宽锗硅光电探测器

Also Published As

Publication number Publication date
JP6560795B2 (ja) 2019-08-14
CA2995668C (en) 2020-12-01
EP3343641B1 (en) 2021-03-17
US20180233618A1 (en) 2018-08-16
JP2018142751A (ja) 2018-09-13
EP3343641A1 (en) 2018-07-04
WO2017038072A1 (ja) 2017-03-09
EP3343641A4 (en) 2019-05-15
CA2995668A1 (en) 2017-03-09
CN107924961A (zh) 2018-04-17
US10720543B2 (en) 2020-07-21
CN107924961B (zh) 2020-03-03
JPWO2017038072A1 (ja) 2017-12-14

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