JP5364282B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5364282B2
JP5364282B2 JP2008073085A JP2008073085A JP5364282B2 JP 5364282 B2 JP5364282 B2 JP 5364282B2 JP 2008073085 A JP2008073085 A JP 2008073085A JP 2008073085 A JP2008073085 A JP 2008073085A JP 5364282 B2 JP5364282 B2 JP 5364282B2
Authority
JP
Japan
Prior art keywords
film
semiconductor film
laser beam
laser
sec
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008073085A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008270779A (ja
JP2008270779A5 (enExample
Inventor
智昭 森若
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008073085A priority Critical patent/JP5364282B2/ja
Publication of JP2008270779A publication Critical patent/JP2008270779A/ja
Publication of JP2008270779A5 publication Critical patent/JP2008270779A5/ja
Application granted granted Critical
Publication of JP5364282B2 publication Critical patent/JP5364282B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02592—Microstructure amorphous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02683—Continuous wave laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02691—Scanning of a beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6744—Monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2008073085A 2007-03-23 2008-03-21 半導体装置の作製方法 Expired - Fee Related JP5364282B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008073085A JP5364282B2 (ja) 2007-03-23 2008-03-21 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007077217 2007-03-23
JP2007077217 2007-03-23
JP2008073085A JP5364282B2 (ja) 2007-03-23 2008-03-21 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2008270779A JP2008270779A (ja) 2008-11-06
JP2008270779A5 JP2008270779A5 (enExample) 2011-04-07
JP5364282B2 true JP5364282B2 (ja) 2013-12-11

Family

ID=39775152

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008073085A Expired - Fee Related JP5364282B2 (ja) 2007-03-23 2008-03-21 半導体装置の作製方法

Country Status (2)

Country Link
US (4) US9177811B2 (enExample)
JP (1) JP5364282B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9177811B2 (en) 2007-03-23 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5700621B2 (ja) * 2009-04-24 2015-04-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW201528379A (zh) * 2013-12-20 2015-07-16 Applied Materials Inc 雙波長退火方法與設備
KR101507381B1 (ko) * 2014-02-26 2015-03-30 주식회사 유진테크 폴리실리콘 막의 성막 방법
US9941479B2 (en) 2014-06-02 2018-04-10 Arizona Board Of Regents On Behalf Of Arizona State University Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues
KR102250044B1 (ko) 2014-07-04 2021-05-11 삼성디스플레이 주식회사 박막트랜지스터 기판 제조방법, 디스플레이 장치 제조방법, 박막트랜지스터 기판 및 디스플레이 장치
JP2016218132A (ja) * 2015-05-15 2016-12-22 ルネサスエレクトロニクス株式会社 半導体装置
US9577204B1 (en) * 2015-10-30 2017-02-21 International Business Machines Corporation Carbon nanotube field-effect transistor with sidewall-protected metal contacts
RU2641596C2 (ru) * 2016-05-30 2018-01-18 Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) Способ получения вольфрамового изделия послойным нанесением вольфрама и устройство для его осуществления
US11294035B2 (en) * 2017-07-11 2022-04-05 Nuro, Inc. LiDAR system with cylindrical lenses
JP7113220B2 (ja) * 2018-02-06 2022-08-05 パナソニックＩｐマネジメント株式会社 半導体素子およびその製造方法
JP6733941B1 (ja) * 2019-03-22 2020-08-05 大口マテリアル株式会社 半導体素子搭載用基板

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0770479B2 (ja) 1985-02-14 1995-07-31 旭硝子株式会社 半導体装置の製造方法
US5962869A (en) * 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
JPS62165908A (ja) 1986-01-17 1987-07-22 Sony Corp 単結晶薄膜の形成方法
US4915772A (en) * 1986-10-01 1990-04-10 Corning Incorporated Capping layer for recrystallization process
JPS63299322A (ja) 1987-05-29 1988-12-06 Sony Corp 単結晶シリコン膜の形成方法
JPH0824104B2 (ja) * 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
JPH07135324A (ja) 1993-11-05 1995-05-23 Semiconductor Energy Lab Co Ltd 薄膜状半導体集積回路
TW299897U (en) * 1993-11-05 1997-03-01 Semiconductor Energy Lab A semiconductor integrated circuit
US5808318A (en) * 1996-03-03 1998-09-15 Ag Technology Co., Ltd. Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction
JPH11145056A (ja) * 1997-11-07 1999-05-28 Sony Corp 半導体材料
US6331476B1 (en) * 1998-05-26 2001-12-18 Mausushita Electric Industrial Co., Ltd. Thin film transistor and producing method thereof
JP3331999B2 (ja) * 1999-02-09 2002-10-07 日本電気株式会社 半導体薄膜の製造方法
US20020020840A1 (en) * 2000-03-10 2002-02-21 Setsuo Nakajima Semiconductor device and manufacturing method thereof
JP2001338894A (ja) 2000-05-26 2001-12-07 Matsushita Electric Ind Co Ltd 固体試料のアニール方法および半導体不純物ドーピング層形成方法
TW546846B (en) * 2001-05-30 2003-08-11 Matsushita Electric Industrial Co Ltd Thin film transistor and method for manufacturing the same
US7238557B2 (en) * 2001-11-14 2007-07-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
JP4369109B2 (ja) 2001-11-14 2009-11-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2004048029A (ja) 2002-07-09 2004-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6908797B2 (en) * 2002-07-09 2005-06-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP2004165436A (ja) 2002-11-13 2004-06-10 Rohm Co Ltd 半導体発光素子の製造方法
JP4593212B2 (ja) 2003-09-19 2010-12-08 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法、及び半導体装置の作製方法
TWI372463B (en) * 2003-12-02 2012-09-11 Semiconductor Energy Lab Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device
JP2005217209A (ja) * 2004-01-30 2005-08-11 Hitachi Ltd レーザアニール方法およびレーザアニール装置
JP4568000B2 (ja) 2004-03-24 2010-10-27 株式会社 日立ディスプレイズ 半導体薄膜の製造方法
TW200616232A (en) * 2004-08-09 2006-05-16 Adv Lcd Tech Dev Ct Co Ltd Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film
KR20120096586A (ko) * 2004-10-20 2012-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI312545B (en) * 2004-10-22 2009-07-21 Ind Tech Res Inst Method of enhancing laser crystallization for poly-silicon fabrication
US7685706B2 (en) * 2005-07-08 2010-03-30 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device
WO2007046290A1 (en) * 2005-10-18 2007-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8278739B2 (en) * 2006-03-20 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US9177811B2 (en) * 2007-03-23 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JP2008270779A (ja) 2008-11-06
US10541337B2 (en) 2020-01-21
US20160005611A1 (en) 2016-01-07
US20080233689A1 (en) 2008-09-25
US20180308985A1 (en) 2018-10-25
US20160049522A1 (en) 2016-02-18
US10032919B2 (en) 2018-07-24
US9177811B2 (en) 2015-11-03

Similar Documents

Publication Publication Date Title
JP5364282B2 (ja) 半導体装置の作製方法
JP5354940B2 (ja) 半導体装置の作製方法
JP4373115B2 (ja) 半導体装置の作製方法
US7445974B2 (en) Laser beam irradiating apparatus, laser beam irradiating method, and method of manufacturing a semiconductor device
JP3980465B2 (ja) 半導体装置の作製方法
US7759181B2 (en) Method of manufacturing a semiconductor device
TWI390811B (zh) 雷射照射方法及結晶系半導體膜的製造方法
US20050139582A1 (en) Laser irradiation apparatus, laser irradiation method, and method for manufacturing crystalline semiconductor film
JP5078205B2 (ja) レーザ照射装置
US8670641B2 (en) Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device
US20050111339A1 (en) Laser irradiation apparatus, laser irradiation method, and method of manufacturing a semiconductor device
US7358165B2 (en) Semiconductor device and method for manufacturing semiconductor device
JP4593073B2 (ja) レーザ照射装置
JP4364674B2 (ja) 半導体装置の作製方法
JP2003218056A (ja) レーザ照射方法および半導体装置の作製方法
JP4566504B2 (ja) レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP2007129257A (ja) レーザ照射装置およびレーザ照射方法、並びに半導体装置の作製方法
JP2003218057A (ja) レーザ照射装置
JP2004153022A6 (ja) レーザ照射方法および半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110222

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110222

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130419

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130430

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130613

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130702

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130819

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130903

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130909

R150 Certificate of patent or registration of utility model

Ref document number: 5364282

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees