JP2008270779A5 - - Google Patents
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- Publication number
- JP2008270779A5 JP2008270779A5 JP2008073085A JP2008073085A JP2008270779A5 JP 2008270779 A5 JP2008270779 A5 JP 2008270779A5 JP 2008073085 A JP2008073085 A JP 2008073085A JP 2008073085 A JP2008073085 A JP 2008073085A JP 2008270779 A5 JP2008270779 A5 JP 2008270779A5
- Authority
- JP
- Japan
- Prior art keywords
- sec
- semiconductor film
- film
- forming
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 33
- 239000000758 substrate Substances 0.000 claims 9
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 7
- 229910052751 metal Inorganic materials 0.000 claims 7
- 238000000034 method Methods 0.000 claims 7
- 238000010438 heat treatment Methods 0.000 claims 3
- 230000001678 irradiating effect Effects 0.000 claims 2
- 229910004286 SiNxOy Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 230000010355 oscillation Effects 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008073085A JP5364282B2 (ja) | 2007-03-23 | 2008-03-21 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007077217 | 2007-03-23 | ||
| JP2007077217 | 2007-03-23 | ||
| JP2008073085A JP5364282B2 (ja) | 2007-03-23 | 2008-03-21 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008270779A JP2008270779A (ja) | 2008-11-06 |
| JP2008270779A5 true JP2008270779A5 (enExample) | 2011-04-07 |
| JP5364282B2 JP5364282B2 (ja) | 2013-12-11 |
Family
ID=39775152
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008073085A Expired - Fee Related JP5364282B2 (ja) | 2007-03-23 | 2008-03-21 | 半導体装置の作製方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (4) | US9177811B2 (enExample) |
| JP (1) | JP5364282B2 (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US9177811B2 (en) | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP5700621B2 (ja) * | 2009-04-24 | 2015-04-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| TW201528379A (zh) * | 2013-12-20 | 2015-07-16 | Applied Materials Inc | 雙波長退火方法與設備 |
| KR101507381B1 (ko) * | 2014-02-26 | 2015-03-30 | 주식회사 유진테크 | 폴리실리콘 막의 성막 방법 |
| US9941479B2 (en) | 2014-06-02 | 2018-04-10 | Arizona Board Of Regents On Behalf Of Arizona State University | Tetradentate cyclometalated platinum complexes containing 9,10-dihydroacridine and its analogues |
| KR102250044B1 (ko) | 2014-07-04 | 2021-05-11 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 제조방법, 디스플레이 장치 제조방법, 박막트랜지스터 기판 및 디스플레이 장치 |
| JP2016218132A (ja) * | 2015-05-15 | 2016-12-22 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9577204B1 (en) * | 2015-10-30 | 2017-02-21 | International Business Machines Corporation | Carbon nanotube field-effect transistor with sidewall-protected metal contacts |
| RU2641596C2 (ru) * | 2016-05-30 | 2018-01-18 | Федеральное государственное автономное образовательное учреждение высшего образования "Национальный исследовательский Томский государственный университет" (ТГУ, НИ ТГУ) | Способ получения вольфрамового изделия послойным нанесением вольфрама и устройство для его осуществления |
| US11294035B2 (en) * | 2017-07-11 | 2022-04-05 | Nuro, Inc. | LiDAR system with cylindrical lenses |
| JP7113220B2 (ja) * | 2018-02-06 | 2022-08-05 | パナソニックＩｐマネジメント株式会社 | 半導体素子およびその製造方法 |
| JP6733941B1 (ja) * | 2019-03-22 | 2020-08-05 | 大口マテリアル株式会社 | 半導体素子搭載用基板 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0770479B2 (ja) | 1985-02-14 | 1995-07-31 | 旭硝子株式会社 | 半導体装置の製造方法 |
| US5962869A (en) * | 1988-09-28 | 1999-10-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material and method for forming the same and thin film transistor |
| JPS62165908A (ja) | 1986-01-17 | 1987-07-22 | Sony Corp | 単結晶薄膜の形成方法 |
| US4915772A (en) * | 1986-10-01 | 1990-04-10 | Corning Incorporated | Capping layer for recrystallization process |
| JPS63299322A (ja) | 1987-05-29 | 1988-12-06 | Sony Corp | 単結晶シリコン膜の形成方法 |
| JPH0824104B2 (ja) * | 1991-03-18 | 1996-03-06 | 株式会社半導体エネルギー研究所 | 半導体材料およびその作製方法 |
| JPH07135324A (ja) | 1993-11-05 | 1995-05-23 | Semiconductor Energy Lab Co Ltd | 薄膜状半導体集積回路 |
| TW299897U (en) * | 1993-11-05 | 1997-03-01 | Semiconductor Energy Lab | A semiconductor integrated circuit |
| US5808318A (en) * | 1996-03-03 | 1998-09-15 | Ag Technology Co., Ltd. | Polycrystalline semiconductor thin film for semiconductor TFT on a substrate having a mobility in a longitudinal direction greater than in a width direction |
| JPH11145056A (ja) * | 1997-11-07 | 1999-05-28 | Sony Corp | 半導体材料 |
| US6331476B1 (en) * | 1998-05-26 | 2001-12-18 | Mausushita Electric Industrial Co., Ltd. | Thin film transistor and producing method thereof |
| JP3331999B2 (ja) * | 1999-02-09 | 2002-10-07 | 日本電気株式会社 | 半導体薄膜の製造方法 |
| US20020020840A1 (en) * | 2000-03-10 | 2002-02-21 | Setsuo Nakajima | Semiconductor device and manufacturing method thereof |
| JP2001338894A (ja) | 2000-05-26 | 2001-12-07 | Matsushita Electric Ind Co Ltd | 固体試料のアニール方法および半導体不純物ドーピング層形成方法 |
| TW546846B (en) * | 2001-05-30 | 2003-08-11 | Matsushita Electric Industrial Co Ltd | Thin film transistor and method for manufacturing the same |
| US7238557B2 (en) * | 2001-11-14 | 2007-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
| JP4369109B2 (ja) | 2001-11-14 | 2009-11-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2004048029A (ja) | 2002-07-09 | 2004-02-12 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| US6908797B2 (en) * | 2002-07-09 | 2005-06-21 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
| JP2004165436A (ja) | 2002-11-13 | 2004-06-10 | Rohm Co Ltd | 半導体発光素子の製造方法 |
| JP4593212B2 (ja) | 2003-09-19 | 2010-12-08 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法、及び半導体装置の作製方法 |
| TWI372463B (en) * | 2003-12-02 | 2012-09-11 | Semiconductor Energy Lab | Laser irradiation apparatus, laser irradiation method, and method for manufacturing semiconductor device |
| JP2005217209A (ja) * | 2004-01-30 | 2005-08-11 | Hitachi Ltd | レーザアニール方法およびレーザアニール装置 |
| JP4568000B2 (ja) | 2004-03-24 | 2010-10-27 | 株式会社 日立ディスプレイズ | 半導体薄膜の製造方法 |
| TW200616232A (en) * | 2004-08-09 | 2006-05-16 | Adv Lcd Tech Dev Ct Co Ltd | Semiconductor device including semiconductor thin film, which is subjected to heat treatment to have alignment mark, crystallizing method for the semiconductor thin film, and crystallizing apparatus for the semiconductor thin film |
| KR20120096586A (ko) * | 2004-10-20 | 2012-08-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 제조방법 |
| TWI312545B (en) * | 2004-10-22 | 2009-07-21 | Ind Tech Res Inst | Method of enhancing laser crystallization for poly-silicon fabrication |
| US7685706B2 (en) * | 2005-07-08 | 2010-03-30 | Semiconductor Energy Laboratory Co., Ltd | Method of manufacturing a semiconductor device |
| WO2007046290A1 (en) * | 2005-10-18 | 2007-04-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8278739B2 (en) * | 2006-03-20 | 2012-10-02 | Semiconductor Energy Laboratory Co., Ltd. | Crystalline semiconductor film, semiconductor device, and method for manufacturing thereof |
| US7972943B2 (en) * | 2007-03-02 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US9177811B2 (en) * | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
-
2008
- 2008-03-20 US US12/076,585 patent/US9177811B2/en not_active Expired - Fee Related
- 2008-03-21 JP JP2008073085A patent/JP5364282B2/ja not_active Expired - Fee Related
-
2015
- 2015-09-09 US US14/756,480 patent/US10032919B2/en not_active Expired - Fee Related
- 2015-10-23 US US14/756,870 patent/US20160049522A1/en not_active Abandoned
-
2018
- 2018-06-21 US US15/998,054 patent/US10541337B2/en not_active Expired - Fee Related
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