JP4568000B2 - 半導体薄膜の製造方法 - Google Patents
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Description
(1)、絶縁基板上に形成された半導体薄膜に、連続発振レーザのレーザ光、あるいは連続発振レーザを時間ベースのパルス幅および/またはパルス間隔に時間変調したレーザ光を、該レーザ光または前記基板を走査しながら該絶縁基板上に形成された前記半導体薄膜の任意の領域に照射することにより、前記走査方向に結晶粒が成長する如く結晶化して改質された略帯状結晶半導体薄膜を形成する工程と、
前記レーザ光の照射開始から一定の時間をおいて前記略帯状結晶半導体薄膜の予め定められた領域に検査光を照射し、その散乱光または反射光、あるいは回折光の強度、もしくはそれらの分布を検出することで、前記半導体薄膜の膜質を評価する工程とを含むことを特徴とする。
前記改質領域の前記走査方向の終端領域に検査光を照射し、その散乱光の強度を検出することで、前記改質領域の半導体薄膜の膜質を評価する工程とを含むことを特徴とする。
前記島状あるいは線状の半導体領域の終端領域に検査光を照射して、その散乱光の強度を検出することで、前記半導体薄膜の膜質を評価する工程とを含むことを特徴とする。
前記連続発振レーザのレーザ光、あるいは連続発振レーザを時間ベースのパルス幅および/またはパルス間隔が変調されたレーザ光を前記絶縁基板の周辺と平行な方向に沿って往復させて走査し、前記略帯状結晶半導体薄膜を前記基板の前記駆動回路領域に沿って配列させることを特徴とする。
前記連続発振レーザのレーザ光、あるいは連続発振レーザを時間ベースのパルス幅および/またはパルス間隔が変調されたレーザ光を前記絶縁基板の周辺と平行な方向に沿って往復させて走査し、前記略帯状結晶半導体薄膜からなる改質領域を前記絶縁基板の前記駆動回路領域に沿って所定の間隔で複数個配列させることを特徴とする。
前記連続発振レーザのレーザ光、あるいは連続発振レーザを時間ベースのパルス幅および/またはパルス間隔が変調されたレーザ光を前記絶縁基板の周辺と平行な方向に沿って往復させて走査し、前記略帯状結晶半導体薄膜からなる島状あるいは線状の半導体領域を前記絶縁基板の前記駆動回路領域に沿って所定の間隔で複数個配列させることを特徴とする。
(a)表面に対する主配向が{110}である。
(b)キャリアの移動方向に略垂直な面の主配向が{100}である。
(d)膜のホール移動度が50cm2 /Vs以上、700cm2 /Vs以下である。
(e)膜の熱伝導率は、温度依存性があり、ある温度で最大値を示す。熱伝導率は温度が上昇すると一端上昇し、最大値50W/mK以上、100W/mK以下の値を示す。高温領域では、熱伝導率は温度上昇に伴い低下する。熱伝導率は3オメガ方法などから評価、定義される値である。
(g)膜の結晶粒界のΣ値の分布は、Σ11に最大値を有し、ガウス型に分布する。なお、Σ値は電子線回折法あるいはEBSP(Electron Backscatter Diffraction Pattern法から計測される値である。
Claims (6)
- 絶縁基板上に形成された半導体薄膜に、連続発振レーザを時間ベースのパルス幅および/またはパルス間隔に時間変調したレーザ光を、該レーザ光または前記基板を走査しながら該絶縁基板上に形成された前記半導体薄膜の任意の領域に照射することにより、前記走査方向に結晶粒が成長することで結晶化して改質された略帯状結晶半導体薄膜を形成する工程と、
前記レーザ光がオフになるときに合わせて前記略帯状結晶半導体薄膜の終端領域に検査光を照射する工程と、
前記検査光の散乱光の強度を用いて、前記レーザ光がオフになる際に前記略帯状結晶半導体薄膜の前記終端領域に形成される突起を検出することで、前記半導体薄膜の膜質を評価する工程と
を含むことを特徴とする半導体薄膜の製造方法。 - 前記略帯状結晶半導体薄膜の改質領域を形成し、該改質領域の複数個を空間的に離して不連続に形成することを特徴とする請求項1に記載の半導体薄膜の製造方法。
- 前記半導体薄膜の膜質を評価する工程は、前記突起の形成されていない前記略帯状結晶半導体薄膜がある場合に、前記略帯状結晶半導体薄膜の領域に改めて前記レーザ光を照射して結晶化する工程を含むことを特徴とする請求項1に記載の半導体薄膜の製造方法。
- 前記半導体薄膜の膜質を評価する工程は、前記結晶化された領域により戻される光の正反射光路外の位置に検出器を配置し、前記散乱光の強度を検出することを特徴とする請求項1に記載の半導体薄膜の製造方法。
- 前記検査光の波長は、200nm乃至700nmであり、該検査光を前記基板の表面から入射することを特徴とする請求項1に記載の半導体薄膜の製造方法。
- 前記絶縁基板は、その中央の大部分を占める画素領域と、この画素領域の外側に配置される駆動回路領域とを有する画像表示装置用のアクティブ・マトリクス基板であり、
前記レーザ光を前記絶縁基板の周辺と平行な方向に沿って往復させて走査し、前記略帯状結晶半導体薄膜を前記基板の前記駆動回路領域に沿って配列させることを特徴とする請求項1に記載の半導体薄膜の製造方法。
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JP2004087493A JP4568000B2 (ja) | 2004-03-24 | 2004-03-24 | 半導体薄膜の製造方法 |
US11/030,065 US7981701B2 (en) | 2004-03-24 | 2005-01-07 | Semiconductor thin film manufacturing method |
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JP2007200945A (ja) * | 2006-01-23 | 2007-08-09 | Shimadzu Corp | 結晶化装置 |
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US9177811B2 (en) | 2007-03-23 | 2015-11-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
JP2009065101A (ja) * | 2007-09-10 | 2009-03-26 | Hitachi Displays Ltd | 平面表示装置の製造方法 |
US7820531B2 (en) * | 2007-10-15 | 2010-10-26 | Sony Corporation | Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus |
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US7981701B2 (en) | 2011-07-19 |
US20050214959A1 (en) | 2005-09-29 |
JP2005277062A (ja) | 2005-10-06 |
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