JP2009048199A5 - - Google Patents
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- Publication number
- JP2009048199A5 JP2009048199A5 JP2008232509A JP2008232509A JP2009048199A5 JP 2009048199 A5 JP2009048199 A5 JP 2009048199A5 JP 2008232509 A JP2008232509 A JP 2008232509A JP 2008232509 A JP2008232509 A JP 2008232509A JP 2009048199 A5 JP2009048199 A5 JP 2009048199A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- forming
- film
- liquid crystal
- display device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010408 film Substances 0.000 claims 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000011810 insulating material Substances 0.000 claims 3
- 239000004973 liquid crystal related substance Substances 0.000 claims 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 3
- 239000010409 thin film Substances 0.000 claims 3
- 239000012535 impurity Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910004205 SiNX Inorganic materials 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950035200A KR100188090B1 (ko) | 1995-10-12 | 1995-10-12 | 액정 표시 장치용 박막 트랜지스터 기판의 및 그 제조방법 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005172379A Division JP4312741B2 (ja) | 1995-10-12 | 2005-06-13 | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009048199A JP2009048199A (ja) | 2009-03-05 |
| JP2009048199A5 true JP2009048199A5 (enExample) | 2009-09-10 |
Family
ID=19430017
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27048196A Expired - Fee Related JP3774278B2 (ja) | 1995-10-12 | 1996-10-14 | 液晶表示装置用薄膜トランジスタ基板の製造方法 |
| JP2005172379A Expired - Fee Related JP4312741B2 (ja) | 1995-10-12 | 2005-06-13 | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
| JP2008232509A Withdrawn JP2009048199A (ja) | 1995-10-12 | 2008-09-10 | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
Family Applications Before (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27048196A Expired - Fee Related JP3774278B2 (ja) | 1995-10-12 | 1996-10-14 | 液晶表示装置用薄膜トランジスタ基板の製造方法 |
| JP2005172379A Expired - Fee Related JP4312741B2 (ja) | 1995-10-12 | 2005-06-13 | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (3) | JP3774278B2 (enExample) |
| KR (1) | KR100188090B1 (enExample) |
| TW (1) | TWI246620B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3318285B2 (ja) | 1999-05-10 | 2002-08-26 | 松下電器産業株式会社 | 薄膜トランジスタの製造方法 |
| KR101781175B1 (ko) * | 2015-08-31 | 2017-09-22 | 가천대학교 산학협력단 | 초박막 저결정성 실리콘 채널을 갖는 무접합 전계효과 트랜지스터 및 그 제조방법 |
| JP6864158B2 (ja) * | 2018-06-22 | 2021-04-28 | 住友重機械工業株式会社 | 半導体装置のレーザーアニール方法およびレーザーアニール方法 |
| CN109920731B (zh) * | 2019-03-20 | 2021-03-19 | 上海华虹宏力半导体制造有限公司 | 多晶硅薄膜晶体管及其制作方法 |
| CN115497816B (zh) * | 2022-10-19 | 2023-10-17 | 弘大芯源(深圳)半导体有限公司 | 一种半导体场效应集成电路及制备方法 |
-
1995
- 1995-10-12 KR KR1019950035200A patent/KR100188090B1/ko not_active Expired - Lifetime
-
1996
- 1996-09-07 TW TW085110952A patent/TWI246620B/zh not_active IP Right Cessation
- 1996-10-14 JP JP27048196A patent/JP3774278B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-13 JP JP2005172379A patent/JP4312741B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-10 JP JP2008232509A patent/JP2009048199A/ja not_active Withdrawn
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