Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/01—Manufacture or treatment
  • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
  • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
  • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
  • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
• • G—PHYSICS
  • G02—OPTICS
  • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
  • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
  • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
  • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
  • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
  • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
  • G02F1/1362—Active matrix addressed cells
  • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
  • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D30/00—Field-effect transistors [FET]
  • H10D30/60—Insulated-gate field-effect transistors [IGFET]
  • H10D30/67—Thin-film transistors [TFT]
  • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
  • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
  • H10D30/6731—Top-gate only TFTs

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Optics & Photonics (AREA)
• Microelectronics & Electronic Packaging (AREA)
• High Energy & Nuclear Physics (AREA)
• Nonlinear Science (AREA)
• General Physics & Mathematics (AREA)
• Liquid Crystal (AREA)
• Chemical & Material Sciences (AREA)
• Electromagnetism (AREA)
• Crystallography & Structural Chemistry (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Power Engineering (AREA)
• Mathematical Physics (AREA)
• Thin Film Transistor (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=19430017

Family Applications (1)

Country Status (3)

Families Citing this family (5)

• 1995
  • 1995-10-12 KR KR1019950035200A patent/KR100188090B1/ko not_active Expired - Lifetime
• 1996
  • 1996-09-07 TW TW085110952A patent/TWI246620B/zh not_active IP Right Cessation
  • 1996-10-14 JP JP27048196A patent/JP3774278B2/ja not_active Expired - Fee Related
• 2005
  • 2005-06-13 JP JP2005172379A patent/JP4312741B2/ja not_active Expired - Fee Related
• 2008
  • 2008-09-10 JP JP2008232509A patent/JP2009048199A/ja not_active Withdrawn

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