WO2008142970A1 - 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 - Google Patents
薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 Download PDFInfo
- Publication number
- WO2008142970A1 WO2008142970A1 PCT/JP2008/058275 JP2008058275W WO2008142970A1 WO 2008142970 A1 WO2008142970 A1 WO 2008142970A1 JP 2008058275 W JP2008058275 W JP 2008058275W WO 2008142970 A1 WO2008142970 A1 WO 2008142970A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- producing
- film
- thin
- light absorbing
- absorbing layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 6
- 239000010409 thin film Substances 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000010408 film Substances 0.000 abstract 5
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 3
- 230000005855 radiation Effects 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 230000010356 wave oscillation Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02683—Continuous wave laser beam
-
- H01L21/2026—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097026248A KR101442875B1 (ko) | 2007-05-18 | 2008-04-30 | 박막의 결정화 방법, 박막 반도체 장치의 제조 방법, 전자 기기의 제조 방법, 및 표시 장치의 제조 방법 |
US12/600,595 US8168518B2 (en) | 2007-05-18 | 2008-04-30 | Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device |
CN2008800165967A CN101681815B (zh) | 2007-05-18 | 2008-04-30 | 薄膜的结晶化方法、薄膜半导体装置的制造方法、电子设备的制造方法及显示装置的制造方法 |
US13/441,556 US8518756B2 (en) | 2007-05-18 | 2012-04-06 | Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007132785A JP5003277B2 (ja) | 2007-05-18 | 2007-05-18 | 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 |
JP2007-132785 | 2007-05-18 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/600,595 A-371-Of-International US8168518B2 (en) | 2007-05-18 | 2008-04-30 | Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device |
US13/441,556 Continuation US8518756B2 (en) | 2007-05-18 | 2012-04-06 | Method for crystallizing thin film, method for manufacturing thin film semiconductor device, method for manufacturing electronic apparatus, and method for manufacturing display device |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008142970A1 true WO2008142970A1 (ja) | 2008-11-27 |
Family
ID=40031686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/058275 WO2008142970A1 (ja) | 2007-05-18 | 2008-04-30 | 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8168518B2 (ja) |
JP (1) | JP5003277B2 (ja) |
KR (1) | KR101442875B1 (ja) |
CN (1) | CN101681815B (ja) |
WO (1) | WO2008142970A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011068065A1 (en) * | 2009-12-02 | 2011-06-09 | Canon Kabushiki Kaisha | Semiconductor device and production method thereof |
JP5213192B2 (ja) * | 2009-05-01 | 2013-06-19 | 株式会社日本製鋼所 | 結晶質膜の製造方法および製造装置 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5003277B2 (ja) * | 2007-05-18 | 2012-08-15 | ソニー株式会社 | 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 |
JP2010182819A (ja) * | 2009-02-04 | 2010-08-19 | Sony Corp | 薄膜トランジスタおよび表示装置 |
JP5564879B2 (ja) * | 2009-10-01 | 2014-08-06 | 三菱電機株式会社 | 非晶質半導体膜の結晶化方法、並びに薄膜トランジスタ、半導体装置、表示装置、及びその製造方法 |
TWI528418B (zh) | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
WO2013069045A1 (ja) * | 2011-11-07 | 2013-05-16 | パナソニック株式会社 | 薄膜トランジスタ装置の製造方法、薄膜トランジスタ装置および表示装置 |
CN102832169A (zh) * | 2012-08-28 | 2012-12-19 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示器件 |
KR102580219B1 (ko) * | 2015-12-15 | 2023-09-20 | 삼성디스플레이 주식회사 | 박막 트랜지스터, 이의 제조 방법 및 이를 포함하는 표시 장치 |
US20190067338A1 (en) * | 2017-08-28 | 2019-02-28 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Amoled Substrate and Method for Manufacturing Same |
US10651257B2 (en) | 2017-12-18 | 2020-05-12 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Array substrate and manufacturing method thereof |
CN108039352B (zh) * | 2017-12-18 | 2020-06-05 | 武汉华星光电半导体显示技术有限公司 | 阵列基板及其制造方法 |
CN112542386B (zh) * | 2020-11-03 | 2022-07-08 | 北海惠科光电技术有限公司 | 显示面板和薄膜晶体管的制造方法及其制造设备 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62199012A (ja) * | 1986-02-27 | 1987-09-02 | Agency Of Ind Science & Technol | 薄膜の再結晶化方法 |
JP2002083820A (ja) * | 2000-06-19 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2004128261A (ja) * | 2002-10-03 | 2004-04-22 | Seiko Epson Corp | 半導体薄膜及び薄膜トランジスタの製造方法、電気光学装置及び電子機器 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07335890A (ja) * | 1994-06-03 | 1995-12-22 | Seiko Epson Corp | 薄膜半導体装置の製造方法 |
US7078321B2 (en) * | 2000-06-19 | 2006-07-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2004134577A (ja) | 2002-10-10 | 2004-04-30 | Seiko Epson Corp | 半導体薄膜の製造方法、薄膜トランジスタ、半導体装置、薄膜太陽電池、複合半導体装置の製造方法、電気光学装置及び電子機器 |
JP4954495B2 (ja) | 2005-04-27 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2007324425A (ja) | 2006-06-02 | 2007-12-13 | Sony Corp | 薄膜半導体装置及びその製造方法と表示装置 |
JP5003277B2 (ja) * | 2007-05-18 | 2012-08-15 | ソニー株式会社 | 薄膜の結晶化方法、薄膜半導体装置の製造方法、電子機器の製造方法、および表示装置の製造方法 |
-
2007
- 2007-05-18 JP JP2007132785A patent/JP5003277B2/ja not_active Expired - Fee Related
-
2008
- 2008-04-30 WO PCT/JP2008/058275 patent/WO2008142970A1/ja active Application Filing
- 2008-04-30 CN CN2008800165967A patent/CN101681815B/zh not_active Expired - Fee Related
- 2008-04-30 US US12/600,595 patent/US8168518B2/en not_active Expired - Fee Related
- 2008-04-30 KR KR1020097026248A patent/KR101442875B1/ko not_active IP Right Cessation
-
2012
- 2012-04-06 US US13/441,556 patent/US8518756B2/en not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62199012A (ja) * | 1986-02-27 | 1987-09-02 | Agency Of Ind Science & Technol | 薄膜の再結晶化方法 |
JP2002083820A (ja) * | 2000-06-19 | 2002-03-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
JP2004128261A (ja) * | 2002-10-03 | 2004-04-22 | Seiko Epson Corp | 半導体薄膜及び薄膜トランジスタの製造方法、電気光学装置及び電子機器 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5213192B2 (ja) * | 2009-05-01 | 2013-06-19 | 株式会社日本製鋼所 | 結晶質膜の製造方法および製造装置 |
WO2011068065A1 (en) * | 2009-12-02 | 2011-06-09 | Canon Kabushiki Kaisha | Semiconductor device and production method thereof |
Also Published As
Publication number | Publication date |
---|---|
US20120196395A1 (en) | 2012-08-02 |
JP2008288425A (ja) | 2008-11-27 |
KR20100017836A (ko) | 2010-02-16 |
JP5003277B2 (ja) | 2012-08-15 |
KR101442875B1 (ko) | 2014-09-19 |
CN101681815A (zh) | 2010-03-24 |
US8168518B2 (en) | 2012-05-01 |
US20100159619A1 (en) | 2010-06-24 |
US8518756B2 (en) | 2013-08-27 |
CN101681815B (zh) | 2011-10-26 |
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