JP5346765B2 - 成膜用基板、成膜方法、及び発光装置の作製方法 - Google Patents

成膜用基板、成膜方法、及び発光装置の作製方法 Download PDF

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Publication number
JP5346765B2
JP5346765B2 JP2009239102A JP2009239102A JP5346765B2 JP 5346765 B2 JP5346765 B2 JP 5346765B2 JP 2009239102 A JP2009239102 A JP 2009239102A JP 2009239102 A JP2009239102 A JP 2009239102A JP 5346765 B2 JP5346765 B2 JP 5346765B2
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Prior art keywords
light
film
layer
substrate
organic compound
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JP2009239102A
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Japanese (ja)
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JP2010121207A5 (enExample
JP2010121207A (ja
Inventor
浩平 横山
幸一郎 田中
寿雄 池田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009239102A priority Critical patent/JP5346765B2/ja
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Publication of JP2010121207A5 publication Critical patent/JP2010121207A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2009239102A 2008-10-20 2009-10-16 成膜用基板、成膜方法、及び発光装置の作製方法 Expired - Fee Related JP5346765B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009239102A JP5346765B2 (ja) 2008-10-20 2009-10-16 成膜用基板、成膜方法、及び発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008270293 2008-10-20
JP2008270293 2008-10-20
JP2009239102A JP5346765B2 (ja) 2008-10-20 2009-10-16 成膜用基板、成膜方法、及び発光装置の作製方法

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JP2010121207A JP2010121207A (ja) 2010-06-03
JP2010121207A5 JP2010121207A5 (enExample) 2012-08-30
JP5346765B2 true JP5346765B2 (ja) 2013-11-20

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JP2009239102A Expired - Fee Related JP5346765B2 (ja) 2008-10-20 2009-10-16 成膜用基板、成膜方法、及び発光装置の作製方法

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US (1) US8486736B2 (enExample)
JP (1) JP5346765B2 (enExample)
KR (1) KR101611890B1 (enExample)

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Also Published As

Publication number Publication date
KR101611890B1 (ko) 2016-04-12
US20100098879A1 (en) 2010-04-22
US8486736B2 (en) 2013-07-16
KR20100044101A (ko) 2010-04-29
JP2010121207A (ja) 2010-06-03

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