JP5346121B2 - 薄膜太陽電池構造の製造方法及び薄膜太陽電池アレイ - Google Patents
薄膜太陽電池構造の製造方法及び薄膜太陽電池アレイ Download PDFInfo
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- JP5346121B2 JP5346121B2 JP2012505037A JP2012505037A JP5346121B2 JP 5346121 B2 JP5346121 B2 JP 5346121B2 JP 2012505037 A JP2012505037 A JP 2012505037A JP 2012505037 A JP2012505037 A JP 2012505037A JP 5346121 B2 JP5346121 B2 JP 5346121B2
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- 239000010409 thin film Substances 0.000 title claims description 103
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000000034 method Methods 0.000 title description 17
- 239000004065 semiconductor Substances 0.000 claims description 130
- 239000000758 substrate Substances 0.000 claims description 94
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 20
- 239000013078 crystal Substances 0.000 claims description 18
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 177
- 229910021417 amorphous silicon Inorganic materials 0.000 description 42
- 238000010248 power generation Methods 0.000 description 17
- 238000005215 recombination Methods 0.000 description 14
- 230000006798 recombination Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 11
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 6
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- ONRPGGOGHKMHDT-UHFFFAOYSA-N benzene-1,2-diol;ethane-1,2-diamine Chemical compound NCCN.OC1=CC=CC=C1O ONRPGGOGHKMHDT-UHFFFAOYSA-N 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
Description
Claims (10)
- A.第1の表面及び該第1の表面に対向する第2の表面を備える第1の導電型の半導体基材を用意するステップと、
B.前記第1の表面から半導体基材をエッチングして少なくとも2つの第1の溝を形成し、前記第2の表面から半導体基材をエッチングして、隣り合う2つの前記第1の溝の間に位置する第2の溝を少なくとも1つ形成することとし、前記第1の溝及び第2の溝の間にある前記半導体基材の残部が薄膜太陽電池構造の半導体基板を形成し、隣り合う前記半導体基板は複数の屈曲可能な絶縁層により接続されるステップと、
C.少なくとも前記第1の溝の側壁に第1の構造を形成するステップと、
D.少なくとも前記第2の溝の側壁に第2の構造を形成するステップと、
E.前記半導体基材を、切断するか又は引き伸ばして、前記第1の構造、第2の構造又はその組合せを前記薄膜太陽電池構造の入光面とするように薄膜太陽電池構造を形成するステップと
を含むことを特徴とする薄膜太陽電池構造の製造方法。 - 前記ステップCは、少なくとも前記第1の溝の側壁に、第1の導電型と異なる第2の導電型の第1の半導体層を形成し、該第1の半導体層上に第1の電極層を形成することを含むことを特徴とする請求項1に記載の製造方法。
- 前記ステップDは、少なくとも前記第2の溝の側壁に第2の電極層を形成すること、又は
少なくとも前記第2の溝の側壁に第1の導電型の第2の半導体層を形成し、前記第2の半導体層上に第2の電極層を形成することを含むことを特徴とする請求項1に記載の製造方法。 - 前記半導体基材は単結晶シリコン、単結晶ゲルマニウム、単結晶シリコンゲルマニウム、多結晶シリコン、多結晶ゲルマニウム、多結晶シリコンゲルマニウム、III-V若しくはII-VI化合物半導体、又はその組み合わせであることを特徴とする請求項1に記載の製造方法。
- 第3の表面及び該第3の表面に対向する第4の表面を備える第1の導電型の半導体基板を有する複数の薄膜太陽電池構造と、
隣り合う半導体基板の対向する2つの表面上に形成され、前記隣り合う半導体基板を接続する複数の屈曲可能な絶縁層と
を有し、
前記半導体基板は、前記第3の表面上に位置する第1の構造と、前記第4の表面上に位置する第2の構造とを備え、前記第1の構造は、少なくとも、第2の導電型の第1の半導体層及び第1の電極層を備え、前記第2の構造は少なくとも第2の電極層を備え、前記第2の導電型は第1の導電型と異なり、前記第1の構造、第2の構造又はその組み合わせは前記薄膜太陽電池構造の入光面として形成されていることを特徴とする薄膜太陽電池アレイ。 - 前記複数の屈曲可能な絶縁層に沿う形状の第1の導電層及び/又は第2の導電層を複数備え、前記第1の導電層及び/又は第2の導電層は絶縁層の両側に位置し、前記第1の導電層は隣り合う2つの薄膜太陽電池構造の第1の電極層を接続し、前記第2の導電層は隣り合う2つの薄膜太陽電池構造の第2の電極層を接続することを特徴とする請求項5に記載の薄膜太陽電池アレイ。
- 隣り合う前記屈曲可能な絶縁層の屈曲曲率は相反していることを特徴とする請求項5に記載の薄膜太陽電池アレイ。
- 前記第1の導電層と前記第1の電極層とは一体化されており、及び/又は
前記第2の導電層と前記第2の電極層とは一体化されていることを特徴とする請求項5に記載の薄膜太陽電池アレイ。 - 前記半導体基板は、単結晶シリコン、単結晶ゲルマニウム、単結晶シリコンゲルマニウム、多結晶シリコン、多結晶ゲルマニウム、多結晶シリコンゲルマニウム、III-V若しくはII-VI化合物半導体、又はその組み合わせであることを特徴とする請求項5に記載の薄膜太陽電池アレイ。
- 前記半導体基板は厚さがほぼ5〜120μmであり、幅がほぼ0.2〜3mmであることを特徴とする請求項5に記載の薄膜太陽電池アレイ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21267309P | 2009-04-15 | 2009-04-15 | |
US61/212,673 | 2009-04-15 | ||
CN201010120365.X | 2010-03-05 | ||
CN201010120365 | 2010-03-05 | ||
PCT/CN2010/071772 WO2010118688A1 (zh) | 2009-04-15 | 2010-04-14 | 薄膜太阳能电池结构、薄膜太阳能电池阵列及其制造方法 |
Publications (2)
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JP2012524387A JP2012524387A (ja) | 2012-10-11 |
JP5346121B2 true JP5346121B2 (ja) | 2013-11-20 |
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JP2012505037A Expired - Fee Related JP5346121B2 (ja) | 2009-04-15 | 2010-04-14 | 薄膜太陽電池構造の製造方法及び薄膜太陽電池アレイ |
Country Status (4)
Country | Link |
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US (2) | US20120037211A1 (ja) |
EP (2) | EP2421026A4 (ja) |
JP (1) | JP5346121B2 (ja) |
WO (2) | WO2010118687A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20130143100A (ko) * | 2010-12-29 | 2013-12-30 | 지티에이티 코포레이션 | 얇은 반도체 라미나 상에 지지 요소를 구성함으로써 장치를 형성하는 방법 |
CN102610579B (zh) * | 2011-01-24 | 2016-08-31 | 朱慧珑 | 用于半导体器件制造的基板结构及其制造方法 |
US10396229B2 (en) * | 2011-05-09 | 2019-08-27 | International Business Machines Corporation | Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal |
CN102832116B (zh) * | 2011-06-13 | 2015-03-25 | 聚日(苏州)科技有限公司 | 一种薄膜条形结构、太阳能电池及其制造方法 |
EP2682990B2 (en) | 2012-07-02 | 2023-11-22 | Meyer Burger (Germany) GmbH | Methods of manufacturing hetero-junction solar cells with edge isolation |
JP6704126B2 (ja) * | 2015-12-17 | 2020-06-03 | パナソニックIpマネジメント株式会社 | 接続構造体 |
CN108735862A (zh) * | 2018-07-25 | 2018-11-02 | 汉能新材料科技有限公司 | 太阳能发电组件、薄膜太阳能电池及其制备方法 |
CN110767762A (zh) * | 2018-07-25 | 2020-02-07 | 北京铂阳顶荣光伏科技有限公司 | 太阳能电池前板膜及其制作方法、太阳能电池 |
CN110277463B (zh) * | 2019-07-10 | 2024-03-15 | 通威太阳能(成都)有限公司 | 一种太阳能电池结构制作方法 |
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-
2010
- 2010-04-14 US US13/264,126 patent/US20120037211A1/en not_active Abandoned
- 2010-04-14 WO PCT/CN2010/071770 patent/WO2010118687A1/zh active Application Filing
- 2010-04-14 JP JP2012505037A patent/JP5346121B2/ja not_active Expired - Fee Related
- 2010-04-14 EP EP10764100.3A patent/EP2421026A4/en not_active Withdrawn
- 2010-04-14 WO PCT/CN2010/071772 patent/WO2010118688A1/zh active Application Filing
- 2010-04-14 US US13/264,063 patent/US8742545B2/en not_active Expired - Fee Related
- 2010-04-14 EP EP10764101A patent/EP2421050A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
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WO2010118688A1 (zh) | 2010-10-21 |
WO2010118687A1 (zh) | 2010-10-21 |
JP2012524387A (ja) | 2012-10-11 |
US20120037211A1 (en) | 2012-02-16 |
EP2421026A4 (en) | 2017-11-29 |
US8742545B2 (en) | 2014-06-03 |
EP2421026A1 (en) | 2012-02-22 |
US20120181664A1 (en) | 2012-07-19 |
EP2421050A1 (en) | 2012-02-22 |
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