JP5337041B2 - 回路装置 - Google Patents
回路装置 Download PDFInfo
- Publication number
- JP5337041B2 JP5337041B2 JP2009536913A JP2009536913A JP5337041B2 JP 5337041 B2 JP5337041 B2 JP 5337041B2 JP 2009536913 A JP2009536913 A JP 2009536913A JP 2009536913 A JP2009536913 A JP 2009536913A JP 5337041 B2 JP5337041 B2 JP 5337041B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- circuit device
- conductor
- substrate
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000002114 nanocomposite Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 230000005540 biological transmission Effects 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims abstract description 34
- 239000002245 particle Substances 0.000 claims abstract description 10
- 239000004020 conductor Substances 0.000 claims description 53
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 claims description 33
- 239000000919 ceramic Substances 0.000 claims description 9
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims description 8
- -1 hafnium aluminate Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910052454 barium strontium titanate Inorganic materials 0.000 claims description 4
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 3
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6627—Waveguides, e.g. microstrip line, strip line, coplanar line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1903—Structure including wave guides
- H01L2924/19032—Structure including wave guides being a microstrip line type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Waveguides (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Description
本発明の第1の実施形態について図面を参照して説明する。図1は第1の実施形態に係る回路装置の断面構成を示している。図1に示すように本実施形態の回路装置は、基板11の上に形成された接地導体12と、接地導体12の上に形成されたナノコンポジット膜からなる誘電体膜13と、誘電体膜13の上に形成された信号線路14とを備えている。
配線層が形成されていてもよい。また、接地導体12を配線層の最上層に形成した金属配線としてもよい。
以下に、本発明の第2の実施形態について図面を参照して説明する。図4は第2の実施形態に係る回路装置の断面構成を示している。図4において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。
以下に、本発明の第3の実施形態について図面を参照して説明する。図8は第3の実施形態に係る回路装置の断面構成を示している。図8において図1と同一の構成要素には同一の符号を附すことにより説明を省略する。
以下に、本発明の第4の実施形態について図面を参照して説明する。図9(a)及び(b)は第4の実施形態に係る回路装置であり、(a)は平面構成を示し、(b)は(a)のIXb−IXb線における断面構成を示している。
以下に、本発明の第5の実施形態について図面を参照して説明する。図13(a)及び(b)は第5の実施形態に係る回路装置であり、(a)は平面構成を示し、(b)は(a)のXIIIb−XIIIb線における断面構成を示している。
11 基板
12 接地導体
13 誘電体膜
13A 第1の膜
13B 第2の膜
14 信号線路
21 内部整合回路
22 トランジスタチップ
23 パッケージ
24 リード
30 MIM容量素子
31 下部電極
32 上部電極
33 ナノコンポジット膜
34 絶縁膜
40A 第1の領域
40B 第2の領域
43 誘電体膜
43A 第1の膜
43B 第2の膜
50A 第1の領域
50B 第2の領域
52A 第1の導体膜
52B 第2の導体膜
53 誘電体膜
53A 第1の膜
53B 第2の膜
Claims (12)
- 回路装置は、
基板と、
伝送線路とを備え、
前記伝送線路は、
前記基板の上に形成された接地導体と、
前記接地導体の上に形成された誘電体膜と、
前記誘電体膜の上に形成された信号線路とを有し、
前記誘電体膜は、第1の材料からなる粒子が第2の材料中に分散したナノコンポジット膜からなる第1の膜と、
前記第1の膜より比誘電率の低い第2の膜とを含み、
前記第1の膜は、前記誘電体膜の上部であって、少なくとも前記信号線路の直下に配置されている。 - 請求項1に記載の回路装置において、
前記基板は半導体からなる。 - 請求項2に記載の回路装置は、
前記基板に形成された回路素子をさらに備えている。 - 請求項3に記載の回路装置は、
モノリシックマイクロ波集積回路として動作する。 - 回路装置は、
基板と、
伝送線路とを備え、
前記伝送線路は、
前記基板の上に形成された接地導体と、
前記接地導体の上に形成された誘電体膜と、
前記誘電体膜の上に形成された信号線路とを有し、
前記誘電体膜は、第1の材料からなる粒子が第2の材料中に分散したナノコンポジット膜とを含み、
前記伝送線路は、周期的に形成され、互いにインピーダンスが異なる第1の領域と第2の領域とを有している。 - 請求項5に記載の回路装置において、
前記誘電体膜は、互いに比誘電率が異なる第1の膜と第2の膜とを含み、
前記第1の膜と前記第2の膜とは、それぞれ前記第1の領域と前記第2の領域とに対応して周期的に形成され、
前記第1の膜は、前記ナノコンポジット膜である。 - 回路装置は、
基板と、
伝送線路とを備え、
前記伝送線路は、
前記基板の上に形成された第1の導体膜及び前記第1の導体膜の上に形成された第2の導体膜と、
前記第1の導体膜の上に形成された誘電体膜と、
前記誘電体膜の上に形成された信号線路とを有し、
前記誘電体膜は、第1の膜と第2の膜とを含み、
前記第1の膜は、前記第2の膜の上に形成され、第1の材料からなる粒子が第2の材料中に分散したナノコンポジット膜であり、
前記第1の導体膜は、前記第2の膜と前記基板との間に形成され、
前記第2の導体膜は、前記第1の膜と前記第2の膜との間に、互いに間隔をおいて周期的に形成され、
平面視において、前記第2の導体膜が形成されていない第1の領域では、前記第1の導体膜が接地導体を構成し、
平面視において、前記第2の導体膜が形成された第2の領域では、前記第2の導体膜が接地導体を構成している。 - 請求項1〜7のいずれか1項に記載の回路装置において、
前記第1の材料の粒径は、1nm以上且つ200nm以下である。 - 前記第1の材料は、セラミクスである請求項1〜8のいずれか1項に記載の回路装置。
- 請求項9に記載の回路装置において、
前記セラミクスは、チタン酸ストロンチウム又はチタン酸バリウムストロンチウムである。 - 請求項9に記載の回路装置において、
前記セラミクスは、酸化ハフニウム、ハフニウムアルミネート又はチタン酸ジルコン酸鉛である。 - 請求項1〜11のいずれか1項に記載の回路装置において、
前記第2の材料は、ベンゾシクロブテン、ポリイミド、ポリテトラフルオロエチレン又はポリフェニレンオキシドである。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009536913A JP5337041B2 (ja) | 2007-10-09 | 2008-07-29 | 回路装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007263339 | 2007-10-09 | ||
JP2007263339 | 2007-10-09 | ||
JP2009536913A JP5337041B2 (ja) | 2007-10-09 | 2008-07-29 | 回路装置 |
PCT/JP2008/002022 WO2009047876A1 (ja) | 2007-10-09 | 2008-07-29 | 回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2009047876A1 JPWO2009047876A1 (ja) | 2011-02-17 |
JP5337041B2 true JP5337041B2 (ja) | 2013-11-06 |
Family
ID=40549030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009536913A Expired - Fee Related JP5337041B2 (ja) | 2007-10-09 | 2008-07-29 | 回路装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8400237B2 (ja) |
JP (1) | JP5337041B2 (ja) |
WO (1) | WO2009047876A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5530265B2 (ja) | 2010-06-21 | 2014-06-25 | パナソニック株式会社 | 電力増幅器 |
GB201105912D0 (en) * | 2011-04-07 | 2011-05-18 | Diamond Microwave Devices Ltd | Improved matching techniques for power transistors |
WO2014002765A1 (ja) | 2012-06-29 | 2014-01-03 | 株式会社村田製作所 | 高周波信号線路 |
JP6565130B2 (ja) * | 2013-10-31 | 2019-08-28 | 三菱電機株式会社 | 増幅器 |
US9628041B2 (en) | 2014-02-12 | 2017-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Device for blocking high frequency signal and passing low frequency signal |
JP6571381B2 (ja) * | 2014-05-12 | 2019-09-04 | ローム株式会社 | 無線通信モジュール |
US10091870B2 (en) * | 2015-03-31 | 2018-10-02 | International Business Machines Corporation | Methods for tuning propagation velocity with functionalized carbon nanomaterial |
CN108074789B (zh) * | 2016-11-15 | 2019-10-11 | 北京北方华创微电子装备有限公司 | 一种微波传输装置和半导体处理设备 |
KR20200025917A (ko) * | 2018-08-31 | 2020-03-10 | 주식회사 센서뷰 | 전기방사에 의해 형성된 나노구조 물질을 이용한 전송선로 및 그 제조방법 |
KR20200025902A (ko) * | 2018-08-31 | 2020-03-10 | 주식회사 센서뷰 | 나노구조 물질을 이용한 전송선로 및 그 제조방법 |
US10847858B2 (en) * | 2019-03-07 | 2020-11-24 | Qorvo Us, Inc. | Method for manufacturing circulators with improved performance |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001267813A (ja) * | 2000-01-14 | 2001-09-28 | Sharp Corp | コプレーナ線路およびその製造方法および半導体装置 |
JP2002141671A (ja) * | 2000-10-31 | 2002-05-17 | Kyocera Corp | 多層配線基板およびこれを用いた電子部品モジュール |
JP2002223077A (ja) * | 2001-01-29 | 2002-08-09 | Kyocera Corp | 多層配線基板 |
JP2006033217A (ja) * | 2004-07-14 | 2006-02-02 | Nippon Telegr & Teleph Corp <Ntt> | マイクロストリップ線路及び特性インピーダンス制御方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3241139B2 (ja) * | 1993-02-04 | 2001-12-25 | 三菱電機株式会社 | フィルムキャリア信号伝送線路 |
US5528209A (en) | 1995-04-27 | 1996-06-18 | Hughes Aircraft Company | Monolithic microwave integrated circuit and method |
US5753968A (en) * | 1996-08-05 | 1998-05-19 | Itt Industries, Inc. | Low loss ridged microstrip line for monolithic microwave integrated circuit (MMIC) applications |
JPH10173413A (ja) * | 1996-12-16 | 1998-06-26 | Murata Mfg Co Ltd | 結合線路および結合線路の作成方法 |
JP3216622B2 (ja) * | 1998-12-18 | 2001-10-09 | 日本電気株式会社 | 半導体装置 |
JP2001308610A (ja) | 2000-04-20 | 2001-11-02 | Matsushita Electric Ind Co Ltd | マイクロストリップ線路、その製造方法、インダクタ素子及び高周波半導体装置 |
US6690251B2 (en) * | 2001-04-11 | 2004-02-10 | Kyocera Wireless Corporation | Tunable ferro-electric filter |
JP2003332517A (ja) * | 2002-05-14 | 2003-11-21 | Matsushita Electric Ind Co Ltd | マイクロ波集積回路及びその製造方法並びに無線装置 |
US6838954B2 (en) | 2002-06-27 | 2005-01-04 | Harris Corporation | High efficiency quarter-wave transformer |
TWI318790B (en) * | 2002-12-31 | 2009-12-21 | Advanced Semiconductor Eng | High-frequency substrate |
JP4182016B2 (ja) * | 2004-03-11 | 2008-11-19 | 日本電気株式会社 | 伝送線路型素子及びその作製方法 |
DE102004035368B4 (de) * | 2004-07-21 | 2007-10-18 | Infineon Technologies Ag | Substrat mit Leiterbahnen und Herstellung der Leiterbahnen auf Substraten für Halbleiterbauteile |
US7476918B2 (en) | 2004-11-22 | 2009-01-13 | Panasonic Corporation | Semiconductor integrated circuit device and vehicle-mounted radar system using the same |
US8193880B2 (en) * | 2008-01-31 | 2012-06-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Transmitting radio frequency signal in semiconductor structure |
-
2008
- 2008-07-29 US US12/681,284 patent/US8400237B2/en not_active Expired - Fee Related
- 2008-07-29 WO PCT/JP2008/002022 patent/WO2009047876A1/ja active Application Filing
- 2008-07-29 JP JP2009536913A patent/JP5337041B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001267813A (ja) * | 2000-01-14 | 2001-09-28 | Sharp Corp | コプレーナ線路およびその製造方法および半導体装置 |
JP2002141671A (ja) * | 2000-10-31 | 2002-05-17 | Kyocera Corp | 多層配線基板およびこれを用いた電子部品モジュール |
JP2002223077A (ja) * | 2001-01-29 | 2002-08-09 | Kyocera Corp | 多層配線基板 |
JP2006033217A (ja) * | 2004-07-14 | 2006-02-02 | Nippon Telegr & Teleph Corp <Ntt> | マイクロストリップ線路及び特性インピーダンス制御方法 |
Also Published As
Publication number | Publication date |
---|---|
US8400237B2 (en) | 2013-03-19 |
JPWO2009047876A1 (ja) | 2011-02-17 |
US20100237967A1 (en) | 2010-09-23 |
WO2009047876A1 (ja) | 2009-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5337041B2 (ja) | 回路装置 | |
TWI532351B (zh) | 寬頻連接結構及其連接方法、傳輸裝置及傳輸寬頻訊號的方法 | |
JP7426103B2 (ja) | 高ピーク帯域幅i/oチャネルを備えたモジュール | |
TWI517350B (zh) | 用於無線應用之高功率半導體裝置及用以形成高功率半導體裝置之方法 | |
US9947628B2 (en) | High frequency semiconductor amplifier | |
US8575731B2 (en) | Semiconductor device with a balun | |
US8471645B2 (en) | Balanced-unbalanced transformer | |
US20060192637A1 (en) | Passive component | |
JP4015746B2 (ja) | 半導体装置 | |
WO2010100845A1 (ja) | 半導体チップ及び半導体装置 | |
US9640530B2 (en) | Semiconductor device | |
JP2012084723A (ja) | 半導体装置 | |
JPH11195731A (ja) | 半導体装置 | |
US7576629B2 (en) | Semiconductor device having signal line and reference potential planes separated by a vertical gap | |
JP2010251669A (ja) | 静電気放電保護回路 | |
JP2011171501A (ja) | フリップチップ実装装置 | |
JP2011055302A (ja) | 高周波伝送線路 | |
JP3334954B2 (ja) | 高周波半導体装置 | |
US10862185B2 (en) | Integrated circuit with capacitor in different layer than transmission line | |
TW543236B (en) | High frequency semiconductor device | |
US7288844B2 (en) | Semiconductor device, semiconductor circuit and method for producing semiconductor device | |
Yang et al. | Electrical transmission characterization of IPD microstrips up to 30GHz | |
CN116544640A (zh) | 用于高频电流隔离器的电容耦合谐振器 | |
JPH11346105A (ja) | マイクロ波平面回路 | |
JP2006197468A (ja) | 高周波差動信号用フィルタ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110228 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120207 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130129 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130329 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130514 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130701 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130723 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130802 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |