JP5322668B2 - 半導体装置の製造方法およびフォトマスク - Google Patents

半導体装置の製造方法およびフォトマスク Download PDF

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Publication number
JP5322668B2
JP5322668B2 JP2009010653A JP2009010653A JP5322668B2 JP 5322668 B2 JP5322668 B2 JP 5322668B2 JP 2009010653 A JP2009010653 A JP 2009010653A JP 2009010653 A JP2009010653 A JP 2009010653A JP 5322668 B2 JP5322668 B2 JP 5322668B2
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Japan
Prior art keywords
pattern
region
mask
film
mask material
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Expired - Fee Related
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JP2009010653A
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English (en)
Japanese (ja)
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JP2010171106A5 (https=
JP2010171106A (ja
Inventor
聡 稲葉
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Toshiba Corp
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Toshiba Corp
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Priority to JP2009010653A priority Critical patent/JP5322668B2/ja
Priority to US12/556,152 priority patent/US8329592B2/en
Publication of JP2010171106A publication Critical patent/JP2010171106A/ja
Publication of JP2010171106A5 publication Critical patent/JP2010171106A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H10P50/695—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009010653A 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク Expired - Fee Related JP5322668B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009010653A JP5322668B2 (ja) 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク
US12/556,152 US8329592B2 (en) 2009-01-21 2009-09-09 Method of fabricating semiconductor device, and photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009010653A JP5322668B2 (ja) 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク

Publications (3)

Publication Number Publication Date
JP2010171106A JP2010171106A (ja) 2010-08-05
JP2010171106A5 JP2010171106A5 (https=) 2011-07-07
JP5322668B2 true JP5322668B2 (ja) 2013-10-23

Family

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JP2009010653A Expired - Fee Related JP5322668B2 (ja) 2009-01-21 2009-01-21 半導体装置の製造方法およびフォトマスク

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Country Link
US (1) US8329592B2 (https=)
JP (1) JP5322668B2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324619B2 (en) 2014-08-25 2016-04-26 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4461154B2 (ja) 2007-05-15 2010-05-12 株式会社東芝 半導体装置
US7862962B2 (en) * 2009-01-20 2011-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit layout design
US8258572B2 (en) * 2009-12-07 2012-09-04 Taiwan Semiconductor Manufacturing Company, Ltd. SRAM structure with FinFETs having multiple fins
US8813014B2 (en) 2009-12-30 2014-08-19 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method for making the same using semiconductor fin density design rules
US9274410B2 (en) * 2010-02-05 2016-03-01 Cypress Semiconductor Corporation Method and system for automated generation of masks for spacer formation from a desired final wafer pattern
US9362290B2 (en) * 2010-02-08 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Memory cell layout
KR101867503B1 (ko) * 2010-11-19 2018-06-15 에스케이하이닉스 주식회사 반도체 소자의 미세 패턴 형성 방법
JP2012178378A (ja) * 2011-02-25 2012-09-13 Tokyo Electron Ltd 半導体装置の製造方法
JP5713837B2 (ja) 2011-08-10 2015-05-07 株式会社東芝 半導体装置の製造方法
KR101871748B1 (ko) 2011-12-06 2018-06-28 삼성전자주식회사 반도체 소자의 패턴 형성 방법
JP6136721B2 (ja) * 2013-08-01 2017-05-31 大日本印刷株式会社 パターン形成方法及びインプリントモールドの製造方法
CN105097526B (zh) * 2014-05-04 2018-10-23 中芯国际集成电路制造(上海)有限公司 FinFET器件的制作方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07193198A (ja) * 1993-12-27 1995-07-28 Mitsubishi Electric Corp 不揮発性半導体メモリおよびその製造方法
JP2005116969A (ja) 2003-10-10 2005-04-28 Toshiba Corp 半導体装置及びその製造方法
US7611944B2 (en) * 2005-03-28 2009-11-03 Micron Technology, Inc. Integrated circuit fabrication
JP4768469B2 (ja) * 2006-02-21 2011-09-07 株式会社東芝 半導体装置の製造方法
US7582529B2 (en) * 2007-04-02 2009-09-01 Sandisk Corporation Methods of fabricating non-volatile memory with integrated peripheral circuitry and pre-isolation memory cell formation
JP4384199B2 (ja) * 2007-04-04 2009-12-16 株式会社東芝 半導体装置の製造方法
JP4461154B2 (ja) 2007-05-15 2010-05-12 株式会社東芝 半導体装置
JP4445521B2 (ja) 2007-06-15 2010-04-07 株式会社東芝 半導体装置
KR101468028B1 (ko) * 2008-06-17 2014-12-02 삼성전자주식회사 반도체 소자의 미세 패턴 형성 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324619B2 (en) 2014-08-25 2016-04-26 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US9564368B2 (en) 2014-08-25 2017-02-07 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same

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Publication number Publication date
US20100183958A1 (en) 2010-07-22
US8329592B2 (en) 2012-12-11
JP2010171106A (ja) 2010-08-05

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