JP5322345B2 - 半導体装置及びその作製方法 - Google Patents
半導体装置及びその作製方法 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Description
本実施の形態では、半導体装置の素子構造について説明する。
本実施の形態においては、埋込半導体層と薄膜半導体層とを有する島状半導体層について詳細に説明する。
図4に、実施の形態1(図1、2)の変形例を示す。実施の形態1と異なる点は、チャネル形成領域が薄膜半導体層と埋込半導体層からなることである。
本実施の形態においては、埋込半導体層と薄膜半導体層とを有する島状半導体層の形成する第1の方法について説明する。
本実施の形態においては、埋込半導体層と薄膜半導体層とを有する島状半導体層の形成する第2の方法について説明する。
本実施の形態においては、埋込半導体層と薄膜半導体層とを有する島状半導体層の形成する第3の方法について説明する。
本実施の形態では、埋込半導体層と薄膜半導体層とを有する島状半導体層を形成した後の半導体装置の作製方法について説明する。
本実施の形態においては、本発明の半導体装置の例について説明する。
100a 絶縁物
100b 支持基板
100c 絶縁表面
150 絶縁物
200 島状半導体層
200a 半導体膜
200b 半導体層
200c 半導体層
200d 半導体層
200f 島状半導体層
200g 半導体層
200h 島状半導体層
200i 半導体基板
200j 半導体層
201 ソース領域
202 ドレイン領域
203 チャネル形成領域
204 LDD領域
204a 低濃度不純物領域
204b 低濃度不純物領域
205 LDD領域
205a 低濃度不純物領域
211 領域
212 領域
213 領域
250 島状半導体層
261 領域
262 領域
263 領域
300 ゲート絶縁膜
350 ゲート絶縁膜
400 ゲート電極
400a 導電膜
450 ゲート電極
500 サイドウォール形成用被膜
501 サイドウォール
502 サイドウォール
600 層間絶縁膜
700 導電膜
701 配線
702 配線
2180 非接触タグ
8001 破線
8002 破線
8011 破線
8012 破線
8051 破線
8052 破線
9001 破線
9201 本体
9202 表示部
Claims (3)
- 開口部を有する絶縁物と、
前記絶縁物上に形成された島状半導体層と、
前記島状半導体層上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極上に形成された層間絶縁膜と、
前記層間絶縁膜を貫通するコンタクトホールと、を有し、
前記島状半導体層は、埋込半導体層と薄膜半導体層とを有し、
前記埋込半導体層は、前記開口部に埋め込まれており、
前記薄膜半導体層は、前記開口部と重ならない位置に配置されており、
前記埋込半導体層の膜厚は前記薄膜半導体層の膜厚よりも厚く、
前記コンタクトホールは、前記埋込半導体層と重なる位置に形成されており、
前記島状半導体層は、前記薄膜半導体層内に、チャネル形成領域を有し、
前記島状半導体層は、前記薄膜半導体層内及び前記埋込半導体層内に、低濃度不純物領域を有し、
前記島状半導体層は、前記埋込半導体層内に、高濃度不純物領域を有し、
前記低濃度不純物領域は、前記チャネル形成領域と前記高濃度不純物領域との間に位置することを特徴とする半導体装置。 - 請求項1において、
前記ゲート電極の側面及び前記ゲート絶縁膜の上面に接するサイドウォールを有することを特徴とする半導体装置。 - 開口部を有する絶縁物と、
前記絶縁物上に形成された島状半導体層と、
前記島状半導体層上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、
前記ゲート電極上に形成された層間絶縁膜と、
前記層間絶縁膜を貫通するコンタクトホールと、を有し、
前記島状半導体層は、埋込半導体層と薄膜半導体層とを有し、
前記埋込半導体層は、前記開口部に埋め込まれており、
前記薄膜半導体層は、前記開口部と重ならない位置に配置されており、
前記埋込半導体層の膜厚は前記薄膜半導体層の膜厚よりも厚く、
前記コンタクトホールは、前記埋込半導体層と重なる位置に形成されており、
前記島状半導体層は、前記薄膜半導体層内に、チャネル形成領域を有し、
前記島状半導体層は、前記薄膜半導体層内及び前記埋込半導体層内に、低濃度不純物領域を有し、
前記島状半導体層は、前記埋込半導体層内に、高濃度不純物領域を有し、
前記低濃度不純物領域は、前記チャネル形成領域と前記高濃度不純物領域との間に位置する半導体装置の作製方法であって、
前記絶縁物上及び前記開口部内に第1の半導体膜を形成する第1の工程と、
前記絶縁物上に位置する前記第1の半導体膜を除去して、前記開口部内に埋め込まれた第1の層を形成する第2の工程と、
前記絶縁物上及び前記第1の層上に第2の半導体膜を形成する第3の工程と、
前記第2の半導体膜にレーザーを照射する第4の工程と、
前記レーザーが照射された前記第2の半導体膜を薄くする第5の工程と、
薄くした前記第2の半導体膜をエッチングして第2の層を形成する第6の工程と、を経て、前記島状半導体層を形成することを特徴とする半導体装置の作製方法。
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US (2) | US7569886B2 (ja) |
JP (1) | JP5322345B2 (ja) |
CN (1) | CN101262013B (ja) |
TW (1) | TWI487117B (ja) |
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CN101930947B (zh) * | 2009-06-19 | 2012-03-28 | 中芯国际集成电路制造(上海)有限公司 | Cmos晶体管及其制作方法 |
US8138029B2 (en) * | 2010-01-13 | 2012-03-20 | International Business Machines Corporation | Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) |
US9105749B2 (en) * | 2011-05-13 | 2015-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
KR102222344B1 (ko) * | 2013-05-02 | 2021-03-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
JP2017103260A (ja) * | 2014-03-31 | 2017-06-08 | 株式会社東芝 | トランジスタ、および、トランジスタの製造方法 |
JP6417125B2 (ja) | 2014-06-25 | 2018-10-31 | 株式会社ジャパンディスプレイ | 半導体装置 |
CN104779301B (zh) * | 2015-04-24 | 2017-10-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管及其制作方法、阵列基板、显示装置 |
CN106898653A (zh) * | 2015-12-21 | 2017-06-27 | 昆山国显光电有限公司 | 驱动薄膜晶体管、像素电路及显示装置 |
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JP4118209B2 (ja) * | 2003-08-26 | 2008-07-16 | 三菱電機株式会社 | 半導体装置、その製造方法および回路の製造方法 |
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US7569886B2 (en) | 2009-08-04 |
US20080217688A1 (en) | 2008-09-11 |
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CN101262013B (zh) | 2012-01-11 |
TWI487117B (zh) | 2015-06-01 |
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