JP5314891B2 - ＣＭＯＳにおいてキャリア移動度を向上させる方法（ＭＯＳＦＥＴデバイスの圧縮ＳｉＧｅ＜１１０＞成長および構造） - Google Patents

ＣＭＯＳにおいてキャリア移動度を向上させる方法（ＭＯＳＦＥＴデバイスの圧縮ＳｉＧｅ＜１１０＞成長および構造） Download PDF

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JP5314891B2
JP5314891B2 JP2007518341A JP2007518341A JP5314891B2 JP 5314891 B2 JP5314891 B2 JP 5314891B2 JP 2007518341 A JP2007518341 A JP 2007518341A JP 2007518341 A JP2007518341 A JP 2007518341A JP 5314891 B2 JP5314891 B2 JP 5314891B2
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substrate
sige
layer
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JP2008504695A5 (https=
JP2008504695A (ja
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チャン、ケヴィン、ケイ
グァリニ、キャスリン、ダブリュ
ユン、メイケル
リム、カーン
ヤン、ミン
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H10D30/798—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions being provided in or under the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2924—Structures
    • H10P14/2925—Surface structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/36—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done before the formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0167—Manufacturing their channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007518341A 2004-06-24 2005-06-21 ＣＭＯＳにおいてキャリア移動度を向上させる方法（ＭＯＳＦＥＴデバイスの圧縮ＳｉＧｅ＜１１０＞成長および構造） Expired - Fee Related JP5314891B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/875,727 2004-06-24
US10/875,727 US7187059B2 (en) 2004-06-24 2004-06-24 Compressive SiGe <110> growth and structure of MOSFET devices
PCT/US2005/022643 WO2006002410A2 (en) 2004-06-24 2005-06-21 Compressive sige <110> growth mosfet devices

Publications (3)

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JP2008504695A JP2008504695A (ja) 2008-02-14
JP2008504695A5 JP2008504695A5 (https=) 2008-06-19
JP5314891B2 true JP5314891B2 (ja) 2013-10-16

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JP2007518341A Expired - Fee Related JP5314891B2 (ja) 2004-06-24 2005-06-21 ＣＭＯＳにおいてキャリア移動度を向上させる方法（ＭＯＳＦＥＴデバイスの圧縮ＳｉＧｅ＜１１０＞成長および構造）

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US (1) US7187059B2 (https=)
EP (1) EP1794786A4 (https=)
JP (1) JP5314891B2 (https=)
CN (1) CN101160664B (https=)
TW (1) TW200601419A (https=)
WO (1) WO2006002410A2 (https=)

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US7361574B1 (en) * 2006-11-17 2008-04-22 Sharp Laboratories Of America, Inc Single-crystal silicon-on-glass from film transfer
US20080169535A1 (en) * 2007-01-12 2008-07-17 International Business Machines Corporation Sub-lithographic faceting for mosfet performance enhancement
US20090085169A1 (en) * 2007-09-28 2009-04-02 Willy Rachmady Method of achieving atomically smooth sidewalls in deep trenches, and high aspect ratio silicon structure containing atomically smooth sidewalls
US20090242989A1 (en) * 2008-03-25 2009-10-01 Chan Kevin K Complementary metal-oxide-semiconductor device with embedded stressor
US7972922B2 (en) * 2008-11-21 2011-07-05 Freescale Semiconductor, Inc. Method of forming a semiconductor layer
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US8329568B1 (en) * 2010-05-03 2012-12-11 Xilinx, Inc. Semiconductor device and method for making the same
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US9466672B1 (en) 2015-11-25 2016-10-11 International Business Machines Corporation Reduced defect densities in graded buffer layers by tensile strained interlayers
US11492696B2 (en) * 2016-07-15 2022-11-08 National University Corporation Tokyo University Of Agriculutre And Technology Manufacturing method for semiconductor laminated film, and semiconductor laminated film
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Also Published As

Publication number Publication date
CN101160664B (zh) 2010-09-08
TW200601419A (en) 2006-01-01
EP1794786A4 (en) 2008-12-24
EP1794786A2 (en) 2007-06-13
US20050285159A1 (en) 2005-12-29
WO2006002410A3 (en) 2007-12-06
WO2006002410A2 (en) 2006-01-05
US7187059B2 (en) 2007-03-06
JP2008504695A (ja) 2008-02-14
CN101160664A (zh) 2008-04-09

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