JP5313211B2 - フォーカスリング及びプラズマ処理装置 - Google Patents

フォーカスリング及びプラズマ処理装置 Download PDF

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Publication number
JP5313211B2
JP5313211B2 JP2010159320A JP2010159320A JP5313211B2 JP 5313211 B2 JP5313211 B2 JP 5313211B2 JP 2010159320 A JP2010159320 A JP 2010159320A JP 2010159320 A JP2010159320 A JP 2010159320A JP 5313211 B2 JP5313211 B2 JP 5313211B2
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Japan
Prior art keywords
focus ring
semiconductor wafer
upper member
high frequency
processed
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Expired - Fee Related
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JP2010159320A
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Japanese (ja)
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JP2010232694A (ja
Inventor
公 輿石
秀朗 田中
信幸 岡山
正章 宮川
俊介 水上
渉 清水
潤 廣瀬
俊克 若木
智典 三輪
淳 大藪
大輔 林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2010159320A 2003-09-05 2010-07-14 フォーカスリング及びプラズマ処理装置 Expired - Fee Related JP5313211B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010159320A JP5313211B2 (ja) 2003-09-05 2010-07-14 フォーカスリング及びプラズマ処理装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2003314815 2003-09-05
JP2003314815 2003-09-05
JP2004055565 2004-02-27
JP2004055565 2004-02-27
JP2010159320A JP5313211B2 (ja) 2003-09-05 2010-07-14 フォーカスリング及びプラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2004242218A Division JP4640922B2 (ja) 2003-09-05 2004-08-23 プラズマ処理装置

Publications (2)

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JP2010232694A JP2010232694A (ja) 2010-10-14
JP5313211B2 true JP5313211B2 (ja) 2013-10-09

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JP2010159320A Expired - Fee Related JP5313211B2 (ja) 2003-09-05 2010-07-14 フォーカスリング及びプラズマ処理装置

Country Status (4)

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JP (1) JP5313211B2 (zh)
KR (1) KR100576399B1 (zh)
CN (2) CN100364064C (zh)
TW (2) TW200520632A (zh)

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JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
US20130000848A1 (en) * 2011-07-01 2013-01-03 Novellus Systems Inc. Pedestal with edge gas deflector for edge profile control
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WO2014209492A1 (en) * 2013-06-26 2014-12-31 Applied Materials, Inc. Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
JP2015115421A (ja) * 2013-12-10 2015-06-22 東京エレクトロン株式会社 プラズマ処理装置及びフォーカスリング
WO2015116244A1 (en) 2014-01-30 2015-08-06 Applied Materials, Inc. Corner spoiler for improving profile uniformity
WO2015116245A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
CN103811247B (zh) * 2014-02-17 2016-04-13 清华大学 用于等离子体刻蚀的聚焦环及具有其的等离子体刻蚀装置
JP5615454B1 (ja) * 2014-02-25 2014-10-29 コバレントマテリアル株式会社 フォーカスリング
CN106920725B (zh) * 2015-12-24 2018-10-12 中微半导体设备(上海)有限公司 一种聚焦环的温度调整装置及方法
JP6888007B2 (ja) * 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
CN108369922B (zh) 2016-01-26 2023-03-21 应用材料公司 晶片边缘环升降解决方案
JP6586394B2 (ja) * 2016-03-28 2019-10-02 東京エレクトロン株式会社 静電容量を表すデータを取得する方法
US10910195B2 (en) * 2017-01-05 2021-02-02 Lam Research Corporation Substrate support with improved process uniformity
WO2018183245A1 (en) * 2017-03-31 2018-10-04 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
JP6278498B1 (ja) * 2017-05-19 2018-02-14 日本新工芯技株式会社 リング状部材の製造方法及びリング状部材
US20180334746A1 (en) * 2017-05-22 2018-11-22 Lam Research Corporation Wafer Edge Contact Hardware and Methods to Eliminate Deposition at Wafer Backside Edge and Notch
JP6797079B2 (ja) * 2017-06-06 2020-12-09 東京エレクトロン株式会社 プラズマ処理装置、プラズマ制御方法、及びプラズマ制御プログラム
JP6974088B2 (ja) * 2017-09-15 2021-12-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
KR102215873B1 (ko) * 2017-10-17 2021-02-16 가부시키가이샤 아루박 피처리체의 처리 장치
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
JP6846384B2 (ja) * 2018-06-12 2021-03-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の高周波電源を制御する方法
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
KR102214333B1 (ko) 2019-06-27 2021-02-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
CN113348732B (zh) * 2019-12-18 2024-02-09 株式会社日立高新技术 等离子处理装置
JP7365912B2 (ja) * 2020-01-10 2023-10-20 東京エレクトロン株式会社 エッジリング及び基板処理装置
KR102658863B1 (ko) * 2021-02-12 2024-04-17 램 리써치 코포레이션 C-슈라우드의 기계적 강도 또는 수명에 영향을 주지 않고 플라즈마 균일성을 위한 c-슈라우드 조정
TWI824722B (zh) * 2022-09-16 2023-12-01 鴻揚半導體股份有限公司 聚焦環及半導體晶圓加工方法

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Also Published As

Publication number Publication date
TWI488236B (zh) 2015-06-11
TW201243942A (en) 2012-11-01
TWI370707B (zh) 2012-08-11
CN100364064C (zh) 2008-01-23
CN101162689B (zh) 2010-08-18
TW200520632A (en) 2005-06-16
KR20050025079A (ko) 2005-03-11
CN101162689A (zh) 2008-04-16
JP2010232694A (ja) 2010-10-14
CN1591793A (zh) 2005-03-09
KR100576399B1 (ko) 2006-05-03

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