JP5305907B2 - 応力が加えられたゲート金属シリサイド層を含む高性能mosfet及びその製造方法 - Google Patents
応力が加えられたゲート金属シリサイド層を含む高性能mosfet及びその製造方法 Download PDFInfo
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- JP5305907B2 JP5305907B2 JP2008528129A JP2008528129A JP5305907B2 JP 5305907 B2 JP5305907 B2 JP 5305907B2 JP 2008528129 A JP2008528129 A JP 2008528129A JP 2008528129 A JP2008528129 A JP 2008528129A JP 5305907 B2 JP5305907 B2 JP 5305907B2
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 188
- 239000002184 metal Substances 0.000 title claims abstract description 188
- 229910021332 silicide Inorganic materials 0.000 title claims abstract description 147
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims abstract description 146
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 125000006850 spacer group Chemical group 0.000 claims abstract description 50
- 239000002243 precursor Substances 0.000 claims description 94
- 238000000034 method Methods 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 24
- 238000000151 deposition Methods 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 223
- 230000035882 stress Effects 0.000 description 94
- 238000000137 annealing Methods 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 238000012545 processing Methods 0.000 description 13
- 239000007943 implant Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 238000002955 isolation Methods 0.000 description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- 239000004020 conductor Substances 0.000 description 9
- 238000002513 implantation Methods 0.000 description 8
- 125000001475 halogen functional group Chemical group 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
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- 229910019001 CoSi Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
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- 239000012535 impurity Substances 0.000 description 4
- 230000001939 inductive effect Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- -1 region Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229910008484 TiSi Inorganic materials 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
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- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052914 metal silicate Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 150000004760 silicates Chemical class 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- 229910021140 PdSi Inorganic materials 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
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- 239000003989 dielectric material Substances 0.000 description 1
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- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- 229910052697 platinum Inorganic materials 0.000 description 1
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- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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Description
半導体基板内に、ソース領域、ドレイン領域、チャネル領域、ゲート誘電体層、ゲート電極及び1つ又は複数のゲート側壁スペーサを含む少なくとも1つの電界効果トランジスタ(FET)を形成するステップと、
ゲート電極の表面内に内因性応力が加えられた金属シリサイド層を形成するステップであって、内因性応力が加えられた金属シリサイド層は、ゲート側壁スペーサによって横方向に制限され、かつ、FETのチャネル領域内に応力を生じさせるように配置され構成される、ステップと
を含む、半導体デバイスを製造する方法に関する。
凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを形成するステップと、
p−FET前駆構造体及びn−FET前駆構造体の上に金属層を堆積させるステップと、
金属層の上に第1のキャッピング層及び第2のキャッピング層を堆積させるステップと、
p−FET前駆構造体及びn−FET前駆構造体を高温でアニールし、p−FET前駆構造体の凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、n−FET前駆構造体の凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップと、
p−FET前駆構造体及びn−FET前駆構造体から、未反応金属、第1のキャッピング層及び第2のキャッピング層を除去し、p−FET及びn−FETを形成するステップと
によって形成することができる。
凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを準備するステップと、
p−FET前駆構造体及びn−FET前駆構造体の上に金属層を堆積させるステップと、
金属層の上に第1のキャッピング層を堆積させて、p−FET前駆構造体及びn−FET前駆構造体の両方を覆うステップと、
第1のキャッピング層の上にパターン形成された第2のキャッピング層を形成し、p−FET前駆構造体を選択的に覆うステップと、
p−FET前駆構造体及びn−FET前駆構造体を第1の高温でアニールし、p−FET前駆構造体の凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、n−FET前駆構造体の凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップと、
p−FET前駆構造体及びn−FET前駆構造体から、未反応金属、第1のキャッピング層及びパターン形成された第2のキャッピング層を除去し、p−FET及びn−FETを形成するステップと
によって形成することができる。
凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを準備するステップと、
p−FET前駆構造体及びn−FET前駆構造体の上の金属層と、金属層の上の第1のキャッピング層とを堆積させて、p−FET前駆構造体及びn−FET前駆構造体の両方を覆うステップと、
p−FET前駆構造体及びn−FET前駆構造体を第1の高温でアニールし、p−FET前駆構造体の凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、n−FET前駆構造体の凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップであって、第1の金属シリサイド層及び第2の金属シリサイド層は第1のシリサイド相を有する、ステップと、
p−FET前駆構造体及びn−FET前駆構造体から、未反応金属及び第1のキャッピング層を除去するステップと、
パターン形成された第2のキャッピング層を形成し、p−FET前駆構造体を選択的に覆うステップと、
p−FET前駆構造体及びn−FET前駆構造体を第2の高温でアニールし、第1の金属シリサイド層及び第2の金属シリサイド層を第1のシリサイド相から第2の異なるシリサイド相に変換するステップと、
p−FET前駆構造体からパターン形成された第2のキャッピング層を除去し、p−FET及びn−FETを形成するステップと
によって形成することができる。
凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを準備するステップと、
p−FET前駆構造体及びn−FET前駆構造体の上の金属層と、金属層の上の第1のキャッピング層とを堆積させて、p−FET前駆構造体とn−FET前駆構造体との両方を覆うステップと、
p−FET前駆構造体及びn−FET前駆構造体を第1の高温でアニールし、p−FET前駆構造体の凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、n−FET前駆構造体の凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップであって、第1の金属シリサイド層及び第2の金属シリサイド層は第1のシリサイド相を有する、ステップと、
p−FET前駆構造体及びn−FET前駆構造体から、未反応金属及び第1のキャッピング層を除去するステップと、
パターン形成された第2のキャッピング層を形成し、p−FET前駆構造体を選択的に覆うステップであって、パターン形成された第2のキャッピング層に圧縮応力が加えられる、ステップと、
p−FET前駆構造体及びn−FET前駆構造体を第2の高温でアニールし、第1の金属シリサイド層及び第2の金属シリサイド層を第1のシリサイド相から第2の異なるシリサイド相に変換するステップと、
パターン形成された第3のキャッピング層を形成し、n−FET前駆構造体を選択的に覆うステップであって、パターン形成された第3のキャッピング層に引張応力が加えられ、n−FET及びp−FETを形成するステップと
によって形成することができる。
さらに、ソース及びドレイン領域130S、230S、130D、230Dを「隆起」手法で形成することもできる。
Claims (7)
- 半導体基板内に配置された半導体デバイスであって、
ソース領域、ドレイン領域、チャネル領域、ゲート誘電体層、ゲート電極、及び1つ又は複数のゲート側壁スペーサを含む少なくとも1つのp−FETを備え、
前記ゲート電極は、前記1つ又は複数のゲート側壁スペーサによって横方向に制限され、当該ゲート側壁スペーサの上方に突出することなく、かつ、前記FETの前記チャネル領域内に応力を生じさせるように配置された、内因性応力が加えられたゲート金属シリサイド層を含み、
前記ゲート金属シリサイド層は、Coシリサイド、Niシリサイド、またはこれらの組み合わせを含むことにより前記チャネル領域に圧縮応力を生じさせ、
ソース領域、ドレイン領域、チャネル領域、ゲート誘電体層、ゲート電極、及び1つ又は複数のゲート側壁スペーサを含む少なくとも1つのn−FETをさらに備え、
前記n−FETにおいて、前記ゲート電極は、前記ゲート側壁スペーサの上方に突出する、Coシリサイド、Niシリサイド、またはこれらの組み合わせ、あるいはPdシリサイドを含む第2のゲート金属シリサイド層を含む、半導体デバイス。 - 前記p−FETと前記n−FETは、隆起型ソース及びドレイン領域を含む、請求項1に記載の半導体デバイス。
- 前記p−FETと前記n−FETは、前記半導体基板のベースの格子定数より大きい格子定数を有する材料層からなる埋め込まれたソース及びドレイン領域を含む、請求項1に記載の半導体デバイス。
- 半導体デバイスを製造する方法であって、
ゲート側壁スペーサの高さに対して凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、ゲート側壁スペーサの高さに対して凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを形成するステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体の上に金属層を堆積させるステップと、
前記金属層の上に第1のキャッピング層及び第2のキャッピング層を堆積させるステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体を高温でアニールして、前記p−FET前駆構造体の前記凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、前記n−FET前駆構造体の前記凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体から、未反応金属、前記第1のキャッピング層及び前記第2のキャッピング層を除去して、前記p−FET及び前記n−FETを形成するステップとを含み、
前記p−FETの第1の金属シリサイド層は、内因性応力が加えられており、前記p−FETの前記ゲート側壁スペーサによって横方向に制限され、かつ、前記p−FETのチャネル領域内に圧縮応力を生じさせるように配置され構成され、
前記n−FETの第2のゲート金属シリサイド層は、前記n−FETの前記ゲート側壁スペーサの上方に突出するように配置され構成されている、方法。 - 半導体デバイスを製造する方法であって、
ゲート側壁スペーサの高さに対して凹ませられたゲート電極を有する少なくとも1つのp−FETと、ゲート側壁スペーサの高さに対して凹ませられていないゲート電極を有する少なくとも1つのn−FETとを準備するステップと、
前記p−FET及び前記n−FETの上に金属層を堆積させるステップと、
前記金属層の上に第1のキャッピング層を堆積させて、前記p−FET及び前記n−FETの両方を覆うステップと、
前記第1のキャッピング層の上にパターン形成された第2のキャッピング層を形成し、前記p−FETを選択的に覆うステップと、
前記p−FET及び前記n−FETを高温でアニールし、前記p−FETの前記凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、前記n−FETの前記凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップと、
前記p−FET及び前記n−FETから、未反応金属、前記第1のキャッピング層及び前記パターン形成された第2のキャッピング層を除去するステップとを含み、
前記p−FETの第1の金属シリサイド層は、内因性応力が加えられており、前記p−FETの前記ゲート側壁スペーサによって横方向に制限され、かつ、前記p−FETのチャネル領域内に圧縮応力を生じさせるように配置され構成され、
前記n−FETの第2のゲート金属シリサイド層は、前記n−FETの前記ゲート側壁スペーサの上方に突出するように配置され構成されている、方法。 - 半導体デバイスを製造する方法であって、
ゲート側壁スペーサの高さに対して凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、ゲート側壁スペーサの高さに対して凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを準備するステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体の上の金属層と、前記金属層の上の第1のキャッピング層とを堆積させて、前記p−FET前駆構造体及び前記n−FET前駆構造体の両方を覆うステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体を第1の高温でアニールし、前記p−FET前駆構造体の前記凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、前記n−FET前駆構造体の前記凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップであって、前記第1の金属シリサイド層及び前記第2の金属シリサイド層は第1のシリサイド相を有する、ステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体から、未反応金属及び前記第1のキャッピング層を除去するステップと、
パターン形成された第2のキャッピング層を形成し、前記p−FET前駆構造体を選択的に覆うステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体を第2の高温でアニールし、前記第1の金属シリサイド層及び前記第2の金属シリサイド層を、前記第1のシリサイド相から第2の異なるシリサイド相に変換するステップと、
前記パターン形成された第2のキャッピング層を除去し、前記p−FET及び前記n−FETを形成するステップとを含み、
前記p−FETの第1の金属シリサイド層は、内因性応力が加えられており、前記p−FETの前記ゲート側壁スペーサによって横方向に制限され、かつ、前記p−FETのチャネル領域内に圧縮応力を生じさせるように配置され構成され、
前記n−FETの第2のゲート金属シリサイド層は、前記n−FETの前記ゲート側壁スペーサの上方に突出するように配置され構成されている、方法。 - 半導体デバイスを製造する方法であって、
ゲート側壁スペーサの高さに対して凹ませられたゲート電極を有する少なくとも1つのp−FET前駆構造体と、ゲート側壁スペーサの高さに対して凹ませられていないゲート電極を有する少なくとも1つのn−FET前駆構造体とを準備するステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体の上の金属層と、前記金属層の上の第1のキャッピング層を堆積させて、p−FET前駆構造体及びn−FET前駆構造体の両方を覆うステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体を第1の高温でアニールし、前記p−FET前駆構造体の前記凹ませられたゲート電極の表面内に第1の金属シリサイド層を形成し、前記n−FET前駆構造体の前記凹ませられていないゲート電極の表面内に第2の金属シリサイド層を形成するステップであって、前記第1の金属シリサイド層及び前記第2の金属シリサイド層は第1のシリサイド相を有する、ステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体から、未反応金属及び前記第1のキャッピング層を除去するステップと、
パターン形成された第2のキャッピング層を形成し、前記p−FET前駆構造体を選択的に覆うステップであって、前記パターン形成された第2のキャッピング層に圧縮応力が加えられる、ステップと、
前記p−FET前駆構造体及び前記n−FET前駆構造体を第2の高温でアニールし、前記第1の金属シリサイド層及び前記第2の金属シリサイド層を前記第1のシリサイド相から第2の異なるシリサイド相に変換するステップと、
パターン形成された第3のキャッピング層を形成し、前記n−FET前駆構造体を選択的に覆うステップであって、前記パターン形成された第3のキャッピング層に引張応力が加えられ、前記p−FET及び前記n−FETを形成するステップとを含み、
前記p−FETの第1の金属シリサイド層は、内因性応力が加えられており、前記p−FETの前記ゲート側壁スペーサによって横方向に制限され、かつ、前記p−FETのチャネル領域内に圧縮応力を生じさせるように配置され構成され、
前記n−FETの第2のゲート金属シリサイド層は、前記n−FETの前記ゲート側壁スペーサの上方に突出するように配置され構成されている、方法。
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PCT/US2006/032974 WO2007024984A2 (en) | 2005-08-22 | 2006-08-22 | High performance mosfet comprising a stressed gate metal silicide layer and method of fabricating the same |
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US20070040225A1 (en) | 2007-02-22 |
KR100992036B1 (ko) | 2010-11-05 |
EP1929537A4 (en) | 2008-10-08 |
US8405131B2 (en) | 2013-03-26 |
DE602006008017D1 (de) | 2009-09-03 |
US7470943B2 (en) | 2008-12-30 |
KR20080037666A (ko) | 2008-04-30 |
WO2007024984A2 (en) | 2007-03-01 |
WO2007024984A3 (en) | 2008-01-17 |
CN101243556A (zh) | 2008-08-13 |
TWI412129B (zh) | 2013-10-11 |
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