JP5293939B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5293939B2
JP5293939B2 JP2008137063A JP2008137063A JP5293939B2 JP 5293939 B2 JP5293939 B2 JP 5293939B2 JP 2008137063 A JP2008137063 A JP 2008137063A JP 2008137063 A JP2008137063 A JP 2008137063A JP 5293939 B2 JP5293939 B2 JP 5293939B2
Authority
JP
Japan
Prior art keywords
wiring
layer wiring
layer
lower layer
standard cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008137063A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009049370A (ja
JP2009049370A5 (zh
Inventor
信浩 津田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2008137063A priority Critical patent/JP5293939B2/ja
Priority to TW097126596A priority patent/TWI437665B/zh
Priority to US12/178,204 priority patent/US8063415B2/en
Priority to KR1020080072364A priority patent/KR20090012136A/ko
Priority to CN2008101769097A priority patent/CN101388391B/zh
Publication of JP2009049370A publication Critical patent/JP2009049370A/ja
Publication of JP2009049370A5 publication Critical patent/JP2009049370A5/ja
Priority to US13/248,965 priority patent/US8264011B2/en
Application granted granted Critical
Publication of JP5293939B2 publication Critical patent/JP5293939B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008137063A 2007-07-25 2008-05-26 半導体装置 Expired - Fee Related JP5293939B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2008137063A JP5293939B2 (ja) 2007-07-25 2008-05-26 半導体装置
TW097126596A TWI437665B (zh) 2007-07-25 2008-07-14 半導體裝置
US12/178,204 US8063415B2 (en) 2007-07-25 2008-07-23 Semiconductor device
KR1020080072364A KR20090012136A (ko) 2007-07-25 2008-07-24 반도체 장치
CN2008101769097A CN101388391B (zh) 2007-07-25 2008-07-25 半导体装置
US13/248,965 US8264011B2 (en) 2007-07-25 2011-09-29 Semiconductor device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007193580 2007-07-25
JP2007193580 2007-07-25
JP2008137063A JP5293939B2 (ja) 2007-07-25 2008-05-26 半導体装置

Publications (3)

Publication Number Publication Date
JP2009049370A JP2009049370A (ja) 2009-03-05
JP2009049370A5 JP2009049370A5 (zh) 2011-03-31
JP5293939B2 true JP5293939B2 (ja) 2013-09-18

Family

ID=40477685

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008137063A Expired - Fee Related JP5293939B2 (ja) 2007-07-25 2008-05-26 半導体装置

Country Status (4)

Country Link
JP (1) JP5293939B2 (zh)
KR (1) KR20090012136A (zh)
CN (1) CN101388391B (zh)
TW (1) TWI437665B (zh)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5552775B2 (ja) 2009-08-28 2014-07-16 ソニー株式会社 半導体集積回路
JP5685457B2 (ja) 2010-04-02 2015-03-18 ルネサスエレクトロニクス株式会社 半導体集積回路装置
WO2013018589A1 (ja) * 2011-08-01 2013-02-07 国立大学法人電気通信大学 半導体集積回路装置
US8813016B1 (en) 2013-01-28 2014-08-19 Taiwan Semiconductor Manufacturing Company Limited Multiple via connections using connectivity rings
CN103546146B (zh) * 2013-09-24 2016-03-02 中国科学院微电子研究所 抗单粒子瞬态脉冲cmos电路
JP5776802B2 (ja) * 2014-02-14 2015-09-09 ソニー株式会社 半導体集積回路
US9454633B2 (en) * 2014-06-18 2016-09-27 Arm Limited Via placement within an integrated circuit
US9653413B2 (en) * 2014-06-18 2017-05-16 Arm Limited Power grid conductor placement within an integrated circuit
US11120190B2 (en) * 2017-11-21 2021-09-14 Advanced Micro Devices, Inc. Metal zero power ground stub route to reduce cell area and improve cell placement at the chip level
CN112567507B (zh) * 2018-08-28 2024-07-05 株式会社索思未来 半导体集成电路装置
JP7307355B2 (ja) * 2018-09-28 2023-07-12 株式会社ソシオネクスト 半導体集積回路装置および半導体パッケージ構造
WO2021192265A1 (ja) * 2020-03-27 2021-09-30 株式会社ソシオネクスト 半導体集積回路装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923060A (en) * 1996-09-27 1999-07-13 In-Chip Systems, Inc. Reduced area gate array cell design based on shifted placement of alternate rows of cells
JP3672788B2 (ja) * 2000-02-24 2005-07-20 松下電器産業株式会社 半導体装置のセルレイアウト構造およびレイアウト設計方法
JP3718687B2 (ja) * 2002-07-09 2005-11-24 独立行政法人 宇宙航空研究開発機構 インバータ、半導体論理回路、スタティックランダムアクセスメモリ、及びデータラッチ回路
JP4820542B2 (ja) * 2004-09-30 2011-11-24 パナソニック株式会社 半導体集積回路

Also Published As

Publication number Publication date
TW200915488A (en) 2009-04-01
CN101388391B (zh) 2012-07-11
JP2009049370A (ja) 2009-03-05
TWI437665B (zh) 2014-05-11
CN101388391A (zh) 2009-03-18
KR20090012136A (ko) 2009-02-02

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