JP5280609B2 - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP5280609B2 JP5280609B2 JP2005284013A JP2005284013A JP5280609B2 JP 5280609 B2 JP5280609 B2 JP 5280609B2 JP 2005284013 A JP2005284013 A JP 2005284013A JP 2005284013 A JP2005284013 A JP 2005284013A JP 5280609 B2 JP5280609 B2 JP 5280609B2
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 197
- 238000004519 manufacturing process Methods 0.000 title claims description 59
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910021342 tungsten silicide Inorganic materials 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims description 52
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 22
- 229910052721 tungsten Inorganic materials 0.000 claims description 22
- 239000010937 tungsten Substances 0.000 claims description 22
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 88
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 86
- 238000000034 method Methods 0.000 abstract description 67
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 50
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 50
- 230000001737 promoting effect Effects 0.000 abstract description 4
- 238000007654 immersion Methods 0.000 abstract 1
- 238000005549 size reduction Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 134
- 238000001514 detection method Methods 0.000 description 54
- 239000003990 capacitor Substances 0.000 description 47
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 24
- 229910052710 silicon Inorganic materials 0.000 description 24
- 239000010703 silicon Substances 0.000 description 24
- 229920001721 polyimide Polymers 0.000 description 23
- 238000010438 heat treatment Methods 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 230000008859 change Effects 0.000 description 16
- 238000005530 etching Methods 0.000 description 15
- 229910000838 Al alloy Inorganic materials 0.000 description 14
- 238000001312 dry etching Methods 0.000 description 14
- 239000011229 interlayer Substances 0.000 description 14
- 238000012544 monitoring process Methods 0.000 description 14
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 13
- 239000002994 raw material Substances 0.000 description 13
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- -1 Metal Oxide Nitride Chemical class 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 229920002050 silicone resin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Description
本実施の形態は、本発明をデジタル回路、センサ信号を増幅するアンプや無線送受信回路等のアナログ回路、MONOS(Metal Oxide Nitride Oxide Semiconductor)型のフラッシュメモリ回路、静電容量型圧力センサ等を1チップに混載した圧力センサ混載半導体装置に適用したものである。
本実施の形態は、本発明をデジタル回路、センサ信号を増幅するアンプや無線送受信回路等のアナログ回路、MONOS(Metal Oxide Nitride Oxide Semiconductor)型のフラッシュメモリ回路、静電容量型圧力センサ等を1チップに混載した圧力センサ混載半導体装置に適用したものである。
本実施の形態は、デジタル回路、センサ信号を増幅するアンプや無線送受信回路などのアナログ回路、EEPROM(Electrically Erasable and Programmable Read Only Memory)回路、静電容量型圧力センサなどを1チップに混載した圧力センサ混載半導体装置に適用したものである。
本実施の形態は、デジタル回路、センサ信号を増幅するアンプや無線送受信回路などのアナログ回路、EEPROM回路、静電容量型圧力センサなどを1チップに混載した圧力センサ混載半導体装置に適用したものである。
図39は、本実施の形態による圧力検知部の断面図である。本実施の形態では、第4層配線20が最上層配線であり、その上部には平坦化された酸化シリコン膜58が形成されており、酸化シリコン膜59の上部には、窒化シリコン膜59が形成されている。また、窒化シリコン膜59の上部には、最上層配線よりも上層の導電層で構成された電極91が形成されている。電極91は、例えばアルミニウム合金膜などからなり、ヴィアホール92を通じて第4層配線20に接続されている。
2 素子分離溝
3 ゲート酸化膜
4 ゲート電極
4a ポリサイド膜
5 キャップ絶縁膜
6 サイドウォール
7 p型ウエル
8 n型ウエル
9 拡散層(ソース、ドレイン)
10 拡散層(ソース、ドレイン)
11 酸化シリコン膜
12 コンタクトホール
13 プラグ
14 第1層配線
15 ヴィアホール
16 第2層配線
17 ヴィアホール
18 第3層配線
19 ヴィアホール
20 第4層配線
21 ヴィアホール
22 第5層配線
22a、22b 下部電極
23 層間絶縁膜
24 酸化シリコン膜
25 空洞
26 タングステンシリサイド膜
27 孔
28 窒化シリコン膜
29 酸化シリコン膜
30 窒化シリコン膜
31 感光性ポリイミド膜
32 開口
33 金ワイヤ
34 接続部
35 端部
36、37 電源配線
39 タングステン膜
40 メモリゲート
41 制御ゲート
42 ONO膜
43 サイドウォール
44 キャップ絶縁膜
45 ヴィアホール
46、47 酸化シリコン膜
50 パッド
51 パッド
52 引き出し配線
53 窒化シリコン膜
54、55、56 酸化シリコン膜
57 下部電極
58 酸化シリコン膜
59 窒化シリコン膜
60 圧力センサ混載半導体装置
61 ダイパッド部
62 リード
63 筒
64 モールド樹脂
65 シリコーン樹脂
66 樹脂膜
67 パッケージ
70 プリント回路基板
71 ボタン電池
72 端子
73 水晶振動子
74 受動素子
76 プリント回路基板
77 ボタン電池
78 端子
79 パッケージ
80 パッケージ
81 シリコン基板
82 酸化シリコン膜
83 窒化シリコン膜
84 下部電極
85 ダイヤフラム
86 孔
87 窒化シリコン膜
88 酸化シリコン膜
89 層間絶縁膜
90 開口部
91 電極
91a〜91d 電極
92 ヴィアホール
93 感圧導電膜
94 アルミニウム合金膜
Qn、Qp MOSトランジスタ
Qf MONOS型フラッシュメモリトランジスタ
Claims (9)
- 半導体基板上に設けられるMOSトランジスタと、前記半導体基板の上方に設けられる多層配線とを備える電子回路と、
固定電極と、前記固定電極の上方に設けられるダイアフラムと、前記固定電極と前記ダイアフラムの間に設けられる空洞とを備えるセンサと、を有し、
前記固定電極は、前記多層配線のうち最上層の配線を用いて形成され、
前記ダイアフラムは、前記最上層の配線よりも上方のタングステンシリサイド膜またはタングステン膜からなる導電層を用いて形成され、
前記タングステンシリサイド膜またはタングステン膜は引っ張り応力を有することを特徴とする半導体装置。 - 前記センサの少なくとも一部が、前記電子回路と重なる平面領域内の前記電子回路よりも上層に配置されていることを特徴とする請求項1記載の半導体装置。
- 前記電子回路は、アナログ、デジタル混載回路と不揮発メモリ回路とを含むことを特徴とする請求項1記載の半導体装置。
- 前記センサは、前記固定電極と前記ダイアフラムの間の静電容量を測定することにより圧力を検知することを特徴とする請求項1記載の半導体装置。
- タイヤ内に設置され、前記タイヤ内の圧力の検知に用いられることを特徴とする請求項1記載の半導体装置。
- 前記センサは、圧力センサであることを特徴とする請求項1記載の半導体装置。
- 前記センサは、静電容量型圧力センサであることを特徴とする請求項1記載の半導体装置。
- 半導体基板上に設けられるMOSトランジスタと、前記半導体基板の上方に設けられる多層配線とを備える電子回路と、
固定電極と、前記固定電極の上方に設けられるダイアフラムと、前記固定電極と前記ダイアフラムの間に設けられる空洞とを備えるセンサと、を有し、
前記固定電極は、前記多層配線のうち最上層の配線を用いて形成され、
前記ダイアフラムは、前記最上層の配線よりも上方の導電層を用いて形成され、
前記電子回路は、デジタル回路とアナログ回路とを有し、
前記センサは、前記デジタル回路の形成領域上に形成され、前記アナログ回路の形成領域上には形成されないことを特徴とする半導体装置。 - 半導体基板上に設けられるMOSトランジスタと、前記半導体基板の上方に設けられる多層配線とを備える電子回路と、
固定電極と、前記固定電極の上方に設けられるダイアフラムと、前記固定電極と前記ダイアフラムの間に設けられる空洞とを備えるセンサと、を有する半導体装置の製造方法であって、
前記固定電極を、前記多層配線のうち最上層の配線を用いて形成し、
前記ダイアフラムを、前記最上層の配線よりも上方のタングステンシリサイド膜またはタングステン膜からなる導電層を用いて形成し、
前記タングステンシリサイド膜またはタングステン膜は引っ張り応力を有することを特徴とする半導体装置の製造方法。
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