FR3034567B1 - Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integre - Google Patents
Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integreInfo
- Publication number
- FR3034567B1 FR3034567B1 FR1552744A FR1552744A FR3034567B1 FR 3034567 B1 FR3034567 B1 FR 3034567B1 FR 1552744 A FR1552744 A FR 1552744A FR 1552744 A FR1552744 A FR 1552744A FR 3034567 B1 FR3034567 B1 FR 3034567B1
- Authority
- FR
- France
- Prior art keywords
- beol
- loaded
- cavity
- integrated circuit
- improved mobile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H49/00—Apparatus or processes specially adapted to the manufacture of relays or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53242—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
- H01L23/53252—Additional layers associated with noble-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
- H01L23/53266—Additional layers associated with refractory-metal layers, e.g. adhesion, barrier, cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
- H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0078—Switches making use of microelectromechanical systems [MEMS] with parallel movement of the movable contact relative to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H61/00—Electrothermal relays
- H01H2061/006—Micromechanical thermal relay
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Micromachines (AREA)
Abstract
De façon à par exemple améliorer le contact ohmique entre deux pièces métalliques (10, 20) situées à un niveau de métallisation (M3), on équipe ces deux pièces de deux vias déportés (101, 201) situés au niveau de métallisation (M3) et au moins partiellement au niveau de vias (V3) immédiatement supérieur. Chaque via déporté comporte par exemple un composé inoxydable ou quasi inoxydable tel qu'une couche barrière en Ti/TiN.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1552744A FR3034567B1 (fr) | 2015-03-31 | 2015-03-31 | Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integre |
US14/920,621 US9653392B2 (en) | 2015-03-31 | 2015-10-22 | Metallic device having mobile element in a cavity of the BEOL of an integrated circuit |
US15/477,876 US9875870B2 (en) | 2015-03-31 | 2017-04-03 | Metallic device having mobile element in a cavity of the BEOL of an integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1552744A FR3034567B1 (fr) | 2015-03-31 | 2015-03-31 | Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3034567A1 FR3034567A1 (fr) | 2016-10-07 |
FR3034567B1 true FR3034567B1 (fr) | 2017-04-28 |
Family
ID=53040657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1552744A Expired - Fee Related FR3034567B1 (fr) | 2015-03-31 | 2015-03-31 | Dispositif metallique a piece(s) mobile(s) ameliore loge dans une cavite de la partie d'interconnexion (" beol ") d'un circuit integre |
Country Status (2)
Country | Link |
---|---|
US (2) | US9653392B2 (fr) |
FR (1) | FR3034567B1 (fr) |
Family Cites Families (59)
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US5844238A (en) | 1996-03-27 | 1998-12-01 | David Sarnoff Research Center, Inc. | Infrared imager using room temperature capacitance sensor |
JPH10149950A (ja) | 1996-11-15 | 1998-06-02 | Murata Mfg Co Ltd | 可変容量コンデンサ |
US5880921A (en) | 1997-04-28 | 1999-03-09 | Rockwell Science Center, Llc | Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology |
US6396368B1 (en) * | 1999-11-10 | 2002-05-28 | Hrl Laboratories, Llc | CMOS-compatible MEM switches and method of making |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
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US20030064149A1 (en) * | 2001-09-28 | 2003-04-03 | Miller Seth A. | Methods of applying coatings to micro electromechanical devices using a carbon dioxide carrier solvent |
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US7312678B2 (en) | 2005-01-05 | 2007-12-25 | Norcada Inc. | Micro-electromechanical relay |
JP4645227B2 (ja) | 2005-02-28 | 2011-03-09 | セイコーエプソン株式会社 | 振動子構造体及びその製造方法 |
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JP4580826B2 (ja) | 2005-06-17 | 2010-11-17 | 株式会社東芝 | マイクロメカニカルデバイス、マイクロスイッチ、容量可変キャパシタ、高周波回路及び光学スイッチ |
US7489004B2 (en) | 2006-01-24 | 2009-02-10 | Stmicroelectronics S.R.L. | Micro-electro-mechanical variable capacitor for radio frequency applications with reduced influence of a surface roughness |
DE102006061386B3 (de) * | 2006-12-23 | 2008-06-19 | Atmel Germany Gmbh | Integrierte Anordnung, ihre Verwendung und Verfahren zu ihrer Herstellung |
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FR2913816B1 (fr) | 2007-03-16 | 2009-06-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre |
US8310053B2 (en) | 2008-04-23 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a device with a cavity |
US8767373B2 (en) | 2008-05-08 | 2014-07-01 | Nxp, B.V. | Tunable capacitor |
FR2935061A1 (fr) | 2008-08-13 | 2010-02-19 | St Microelectronics Rousset | Dispositif de detection d'une attaque d'un circuit integre |
EP2344416B1 (fr) | 2008-11-07 | 2020-08-05 | Cavendish Kinetics, Inc. | Pluralité de dispositifs mems plus petits pour remplacer un dispositif mems plus grand |
ATE512447T1 (de) | 2008-12-24 | 2011-06-15 | St Microelectronics Rousset | Vorrichtung zur überwachung der temperatur eines elementes |
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DE102009047599A1 (de) | 2009-12-07 | 2011-06-09 | Ihp Gmbh - Innovations For High Performance Microelectronics / Leibniz-Institut Für Innovative Mikroelektronik | Elektromechanischer Mikroschalter zur Schaltung eines elektrischen Signals, mikroelektromechanisches System, integrierte Schaltung und Verfahren zur Herstellung einer integrierten Schaltung |
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FR2984013B1 (fr) | 2011-12-09 | 2014-01-10 | St Microelectronics Rousset | Dispositif mecanique de commutation electrique integre possedant un etat bloque |
FR2984010B1 (fr) | 2011-12-09 | 2014-01-03 | St Microelectronics Rousset | Dispositif capacitif integre ayant une valeur capacitive thermiquement variable |
FR2984009B1 (fr) * | 2011-12-09 | 2014-01-03 | St Microelectronics Rousset | Dispositif mecanique de commutation electrique integre |
US9117889B2 (en) | 2012-01-13 | 2015-08-25 | Ecole Polytechnique Federale De Lausanne (Epfl) | 3D nano-electro-mechanical multiple-state carbon nanotube device structures and methods of fabrication |
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US8735947B1 (en) | 2012-12-04 | 2014-05-27 | International Business Machines Corporation | Non-volatile graphene nanomechanical switch |
FR3000841A1 (fr) | 2013-01-09 | 2014-07-11 | St Microelectronics Rousset | Procede de realisation d'un dispositif metallique loge dans un logement ferme au sein d'un circuit integre, et circuit integre correspondant |
FR3005204A1 (fr) | 2013-04-30 | 2014-10-31 | St Microelectronics Rousset | Dispositif capacitif commutable integre |
FR3006808B1 (fr) | 2013-06-06 | 2015-05-29 | St Microelectronics Rousset | Dispositif de commutation integre electriquement activable |
EP2884542A3 (fr) * | 2013-12-10 | 2015-09-02 | IMEC vzw | Dispositif de circuit intégré avec un commutateur à déclenchement de puissance à l'extrémité arrière de ligne |
US9466452B1 (en) | 2015-03-31 | 2016-10-11 | Stmicroelectronics, Inc. | Integrated cantilever switch |
-
2015
- 2015-03-31 FR FR1552744A patent/FR3034567B1/fr not_active Expired - Fee Related
- 2015-10-22 US US14/920,621 patent/US9653392B2/en active Active
-
2017
- 2017-04-03 US US15/477,876 patent/US9875870B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170207052A1 (en) | 2017-07-20 |
US9653392B2 (en) | 2017-05-16 |
US9875870B2 (en) | 2018-01-23 |
US20160293540A1 (en) | 2016-10-06 |
FR3034567A1 (fr) | 2016-10-07 |
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