FR3022691B1 - Dispositif capacitif commandable integre - Google Patents

Dispositif capacitif commandable integre

Info

Publication number
FR3022691B1
FR3022691B1 FR1455792A FR1455792A FR3022691B1 FR 3022691 B1 FR3022691 B1 FR 3022691B1 FR 1455792 A FR1455792 A FR 1455792A FR 1455792 A FR1455792 A FR 1455792A FR 3022691 B1 FR3022691 B1 FR 3022691B1
Authority
FR
France
Prior art keywords
commandable
integrated
capacitive device
capacitive
integrated commandable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1455792A
Other languages
English (en)
Other versions
FR3022691A1 (fr
Inventor
Pascal Fornara
Christian Rivero
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Rousset SAS
Original Assignee
STMicroelectronics Rousset SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Rousset SAS filed Critical STMicroelectronics Rousset SAS
Priority to FR1455792A priority Critical patent/FR3022691B1/fr
Priority to US14/675,468 priority patent/US9721858B2/en
Publication of FR3022691A1 publication Critical patent/FR3022691A1/fr
Application granted granted Critical
Publication of FR3022691B1 publication Critical patent/FR3022691B1/fr
Priority to US15/648,135 priority patent/US10475713B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021Transducers for transforming electrical into mechanical energy or vice versa
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G5/00Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
    • H01G5/16Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
    • H01G5/18Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223Capacitor integral with wiring layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40Capacitors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00Specific applications of microelectromechanical systems
    • B81B2201/02Sensors
    • B81B2201/0221Variable capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Micromachines (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
FR1455792A 2014-06-23 2014-06-23 Dispositif capacitif commandable integre Expired - Fee Related FR3022691B1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR1455792A FR3022691B1 (fr) 2014-06-23 2014-06-23 Dispositif capacitif commandable integre
US14/675,468 US9721858B2 (en) 2014-06-23 2015-03-31 Controllable integrated capacitive device
US15/648,135 US10475713B2 (en) 2014-06-23 2017-07-12 Controllable integrated capacitive device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1455792A FR3022691B1 (fr) 2014-06-23 2014-06-23 Dispositif capacitif commandable integre

Publications (2)

Publication Number Publication Date
FR3022691A1 FR3022691A1 (fr) 2015-12-25
FR3022691B1 true FR3022691B1 (fr) 2016-07-01

Family

ID=51261153

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1455792A Expired - Fee Related FR3022691B1 (fr) 2014-06-23 2014-06-23 Dispositif capacitif commandable integre

Country Status (2)

Country Link
US (2) US9721858B2 (fr)
FR (1) FR3022691B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102016014001B4 (de) * 2016-11-23 2020-11-12 Blickfeld GmbH MEMS Scanmodul für einen Lichtscanner mit mindestens zwei Stützelementen

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FR1350161A (fr) 1961-12-29 1964-01-24 Rca Corp Appareil acoustique plus particulièrement haut-parleur
US5844238A (en) 1996-03-27 1998-12-01 David Sarnoff Research Center, Inc. Infrared imager using room temperature capacitance sensor
JPH10149950A (ja) * 1996-11-15 1998-06-02 Murata Mfg Co Ltd 可変容量コンデンサ
US5880921A (en) 1997-04-28 1999-03-09 Rockwell Science Center, Llc Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology
US6377438B1 (en) 2000-10-23 2002-04-23 Mcnc Hybrid microelectromechanical system tunable capacitor and associated fabrication methods
AU2002359369A1 (en) 2001-11-09 2003-05-26 Coventor, Incorporated Trilayered beam mems device and related methods
GB2387480B (en) 2002-04-09 2005-04-13 Microsaic Systems Ltd Micro-engineered self-releasing switch
GB0214206D0 (en) * 2002-06-19 2002-07-31 Filtronic Compound Semiconduct A micro-electromechanical variable capacitor
US7317232B2 (en) 2002-10-22 2008-01-08 Cabot Microelectronics Corporation MEM switching device
WO2005069331A1 (fr) 2003-12-30 2005-07-28 Massachusetts Institute Of Technology Technique d'actionnement de microcommutateur basse tension
GB2410371B (en) 2004-01-22 2007-04-04 Microsaic Systems Ltd Microengineered broadband electrical switches
US7960804B1 (en) 2004-05-24 2011-06-14 The United States of America as respresented by the Secretary of the Air Force Latching zip-mode actuated mono wafer MEMS switch
JP5280609B2 (ja) 2004-10-01 2013-09-04 株式会社日立製作所 半導体装置およびその製造方法
US7348870B2 (en) 2005-01-05 2008-03-25 International Business Machines Corporation Structure and method of fabricating a hinge type MEMS switch
JP4645227B2 (ja) * 2005-02-28 2011-03-09 セイコーエプソン株式会社 振動子構造体及びその製造方法
JP4586642B2 (ja) * 2005-06-14 2010-11-24 ソニー株式会社 可動素子、ならびにその可動素子を内蔵する半導体デバイス、モジュールおよび電子機器
JP4580826B2 (ja) 2005-06-17 2010-11-17 株式会社東芝 マイクロメカニカルデバイス、マイクロスイッチ、容量可変キャパシタ、高周波回路及び光学スイッチ
US7489004B2 (en) 2006-01-24 2009-02-10 Stmicroelectronics S.R.L. Micro-electro-mechanical variable capacitor for radio frequency applications with reduced influence of a surface roughness
US7923790B1 (en) 2007-03-09 2011-04-12 Silicon Laboratories Inc. Planar microshells for vacuum encapsulated devices and damascene method of manufacture
US7994594B2 (en) 2007-03-15 2011-08-09 Seiko Epson Corporation Electronic device, resonator, oscillator and method for manufacturing electronic device
FR2913816B1 (fr) 2007-03-16 2009-06-05 Commissariat Energie Atomique Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre
US8310053B2 (en) 2008-04-23 2012-11-13 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a device with a cavity
US8767373B2 (en) 2008-05-08 2014-07-01 Nxp, B.V. Tunable capacitor
FR2935061A1 (fr) 2008-08-13 2010-02-19 St Microelectronics Rousset Dispositif de detection d'une attaque d'un circuit integre
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ATE512447T1 (de) 2008-12-24 2011-06-15 St Microelectronics Rousset Vorrichtung zur überwachung der temperatur eines elementes
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JP5338615B2 (ja) * 2009-10-27 2013-11-13 富士通株式会社 可変容量デバイスおよび可変容量素子の駆動方法
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JP5630243B2 (ja) 2010-11-30 2014-11-26 セイコーエプソン株式会社 電子装置、電子機器及び電子装置の製造方法
US8609450B2 (en) 2010-12-06 2013-12-17 International Business Machines Corporation MEMS switches and fabrication methods
CN103858199B (zh) * 2011-09-30 2017-04-05 富士通株式会社 具有可动部的电气设备及其制造方法
FR2984010B1 (fr) 2011-12-09 2014-01-03 St Microelectronics Rousset Dispositif capacitif integre ayant une valeur capacitive thermiquement variable
FR2984013B1 (fr) 2011-12-09 2014-01-10 St Microelectronics Rousset Dispositif mecanique de commutation electrique integre possedant un etat bloque
FR2984009B1 (fr) 2011-12-09 2014-01-03 St Microelectronics Rousset Dispositif mecanique de commutation electrique integre
FR3000841A1 (fr) 2013-01-09 2014-07-11 St Microelectronics Rousset Procede de realisation d'un dispositif metallique loge dans un logement ferme au sein d'un circuit integre, et circuit integre correspondant
FR3005204A1 (fr) 2013-04-30 2014-10-31 St Microelectronics Rousset Dispositif capacitif commutable integre
FR3006808B1 (fr) 2013-06-06 2015-05-29 St Microelectronics Rousset Dispositif de commutation integre electriquement activable

Also Published As

Publication number Publication date
US9721858B2 (en) 2017-08-01
US20150372155A1 (en) 2015-12-24
FR3022691A1 (fr) 2015-12-25
US10475713B2 (en) 2019-11-12
US20170309532A1 (en) 2017-10-26

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