FR3022691B1 - Dispositif capacitif commandable integre - Google Patents
Dispositif capacitif commandable integreInfo
- Publication number
- FR3022691B1 FR3022691B1 FR1455792A FR1455792A FR3022691B1 FR 3022691 B1 FR3022691 B1 FR 3022691B1 FR 1455792 A FR1455792 A FR 1455792A FR 1455792 A FR1455792 A FR 1455792A FR 3022691 B1 FR3022691 B1 FR 3022691B1
- Authority
- FR
- France
- Prior art keywords
- commandable
- integrated
- capacitive device
- capacitive
- integrated commandable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
- H01G5/18—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes due to change in inclination, e.g. by flexing, by spiral wrapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0221—Variable capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Micromachines (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1455792A FR3022691B1 (fr) | 2014-06-23 | 2014-06-23 | Dispositif capacitif commandable integre |
US14/675,468 US9721858B2 (en) | 2014-06-23 | 2015-03-31 | Controllable integrated capacitive device |
US15/648,135 US10475713B2 (en) | 2014-06-23 | 2017-07-12 | Controllable integrated capacitive device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1455792A FR3022691B1 (fr) | 2014-06-23 | 2014-06-23 | Dispositif capacitif commandable integre |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3022691A1 FR3022691A1 (fr) | 2015-12-25 |
FR3022691B1 true FR3022691B1 (fr) | 2016-07-01 |
Family
ID=51261153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1455792A Expired - Fee Related FR3022691B1 (fr) | 2014-06-23 | 2014-06-23 | Dispositif capacitif commandable integre |
Country Status (2)
Country | Link |
---|---|
US (2) | US9721858B2 (fr) |
FR (1) | FR3022691B1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102016014001B4 (de) * | 2016-11-23 | 2020-11-12 | Blickfeld GmbH | MEMS Scanmodul für einen Lichtscanner mit mindestens zwei Stützelementen |
Family Cites Families (42)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1350161A (fr) | 1961-12-29 | 1964-01-24 | Rca Corp | Appareil acoustique plus particulièrement haut-parleur |
US5844238A (en) | 1996-03-27 | 1998-12-01 | David Sarnoff Research Center, Inc. | Infrared imager using room temperature capacitance sensor |
JPH10149950A (ja) * | 1996-11-15 | 1998-06-02 | Murata Mfg Co Ltd | 可変容量コンデンサ |
US5880921A (en) | 1997-04-28 | 1999-03-09 | Rockwell Science Center, Llc | Monolithically integrated switched capacitor bank using micro electro mechanical system (MEMS) technology |
US6377438B1 (en) | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
AU2002359369A1 (en) | 2001-11-09 | 2003-05-26 | Coventor, Incorporated | Trilayered beam mems device and related methods |
GB2387480B (en) | 2002-04-09 | 2005-04-13 | Microsaic Systems Ltd | Micro-engineered self-releasing switch |
GB0214206D0 (en) * | 2002-06-19 | 2002-07-31 | Filtronic Compound Semiconduct | A micro-electromechanical variable capacitor |
US7317232B2 (en) | 2002-10-22 | 2008-01-08 | Cabot Microelectronics Corporation | MEM switching device |
WO2005069331A1 (fr) | 2003-12-30 | 2005-07-28 | Massachusetts Institute Of Technology | Technique d'actionnement de microcommutateur basse tension |
GB2410371B (en) | 2004-01-22 | 2007-04-04 | Microsaic Systems Ltd | Microengineered broadband electrical switches |
US7960804B1 (en) | 2004-05-24 | 2011-06-14 | The United States of America as respresented by the Secretary of the Air Force | Latching zip-mode actuated mono wafer MEMS switch |
JP5280609B2 (ja) | 2004-10-01 | 2013-09-04 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
US7348870B2 (en) | 2005-01-05 | 2008-03-25 | International Business Machines Corporation | Structure and method of fabricating a hinge type MEMS switch |
JP4645227B2 (ja) * | 2005-02-28 | 2011-03-09 | セイコーエプソン株式会社 | 振動子構造体及びその製造方法 |
JP4586642B2 (ja) * | 2005-06-14 | 2010-11-24 | ソニー株式会社 | 可動素子、ならびにその可動素子を内蔵する半導体デバイス、モジュールおよび電子機器 |
JP4580826B2 (ja) | 2005-06-17 | 2010-11-17 | 株式会社東芝 | マイクロメカニカルデバイス、マイクロスイッチ、容量可変キャパシタ、高周波回路及び光学スイッチ |
US7489004B2 (en) | 2006-01-24 | 2009-02-10 | Stmicroelectronics S.R.L. | Micro-electro-mechanical variable capacitor for radio frequency applications with reduced influence of a surface roughness |
US7923790B1 (en) | 2007-03-09 | 2011-04-12 | Silicon Laboratories Inc. | Planar microshells for vacuum encapsulated devices and damascene method of manufacture |
US7994594B2 (en) | 2007-03-15 | 2011-08-09 | Seiko Epson Corporation | Electronic device, resonator, oscillator and method for manufacturing electronic device |
FR2913816B1 (fr) | 2007-03-16 | 2009-06-05 | Commissariat Energie Atomique | Procede de fabrication d'une structure d'interconnexions a cavites pour circuit integre |
US8310053B2 (en) | 2008-04-23 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a device with a cavity |
US8767373B2 (en) | 2008-05-08 | 2014-07-01 | Nxp, B.V. | Tunable capacitor |
FR2935061A1 (fr) | 2008-08-13 | 2010-02-19 | St Microelectronics Rousset | Dispositif de detection d'une attaque d'un circuit integre |
EP2344416B1 (fr) | 2008-11-07 | 2020-08-05 | Cavendish Kinetics, Inc. | Pluralité de dispositifs mems plus petits pour remplacer un dispositif mems plus grand |
ATE512447T1 (de) | 2008-12-24 | 2011-06-15 | St Microelectronics Rousset | Vorrichtung zur überwachung der temperatur eines elementes |
US8604898B2 (en) | 2009-04-20 | 2013-12-10 | International Business Machines Corporation | Vertical integrated circuit switches, design structure and methods of fabricating same |
WO2010127262A2 (fr) | 2009-04-30 | 2010-11-04 | SunPoint Technologies, Inc. | Positionnement thermomécanique pour suivi des radiations |
TWI396242B (zh) | 2009-08-11 | 2013-05-11 | Pixart Imaging Inc | 微電子裝置、微電子裝置的製造方法、微機電封裝結構及其封裝方法 |
US8247253B2 (en) | 2009-08-11 | 2012-08-21 | Pixart Imaging Inc. | MEMS package structure and method for fabricating the same |
JP5204066B2 (ja) | 2009-09-16 | 2013-06-05 | 株式会社東芝 | Memsデバイス |
JP5338615B2 (ja) * | 2009-10-27 | 2013-11-13 | 富士通株式会社 | 可変容量デバイスおよび可変容量素子の駆動方法 |
KR101086680B1 (ko) | 2009-12-11 | 2011-11-25 | 한국과학기술원 | 가변 커패시터 및 가변 인덕터 |
JP5630243B2 (ja) | 2010-11-30 | 2014-11-26 | セイコーエプソン株式会社 | 電子装置、電子機器及び電子装置の製造方法 |
US8609450B2 (en) | 2010-12-06 | 2013-12-17 | International Business Machines Corporation | MEMS switches and fabrication methods |
CN103858199B (zh) * | 2011-09-30 | 2017-04-05 | 富士通株式会社 | 具有可动部的电气设备及其制造方法 |
FR2984010B1 (fr) | 2011-12-09 | 2014-01-03 | St Microelectronics Rousset | Dispositif capacitif integre ayant une valeur capacitive thermiquement variable |
FR2984013B1 (fr) | 2011-12-09 | 2014-01-10 | St Microelectronics Rousset | Dispositif mecanique de commutation electrique integre possedant un etat bloque |
FR2984009B1 (fr) | 2011-12-09 | 2014-01-03 | St Microelectronics Rousset | Dispositif mecanique de commutation electrique integre |
FR3000841A1 (fr) | 2013-01-09 | 2014-07-11 | St Microelectronics Rousset | Procede de realisation d'un dispositif metallique loge dans un logement ferme au sein d'un circuit integre, et circuit integre correspondant |
FR3005204A1 (fr) | 2013-04-30 | 2014-10-31 | St Microelectronics Rousset | Dispositif capacitif commutable integre |
FR3006808B1 (fr) | 2013-06-06 | 2015-05-29 | St Microelectronics Rousset | Dispositif de commutation integre electriquement activable |
-
2014
- 2014-06-23 FR FR1455792A patent/FR3022691B1/fr not_active Expired - Fee Related
-
2015
- 2015-03-31 US US14/675,468 patent/US9721858B2/en active Active
-
2017
- 2017-07-12 US US15/648,135 patent/US10475713B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US9721858B2 (en) | 2017-08-01 |
US20150372155A1 (en) | 2015-12-24 |
FR3022691A1 (fr) | 2015-12-25 |
US10475713B2 (en) | 2019-11-12 |
US20170309532A1 (en) | 2017-10-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20151225 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |
|
PLFP | Fee payment |
Year of fee payment: 7 |
|
ST | Notification of lapse |
Effective date: 20220205 |