JP5279862B2 - ペリクル膜、その製造方法及び該膜を張ったペリクル - Google Patents
ペリクル膜、その製造方法及び該膜を張ったペリクル Download PDFInfo
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- JP5279862B2 JP5279862B2 JP2011077976A JP2011077976A JP5279862B2 JP 5279862 B2 JP5279862 B2 JP 5279862B2 JP 2011077976 A JP2011077976 A JP 2011077976A JP 2011077976 A JP2011077976 A JP 2011077976A JP 5279862 B2 JP5279862 B2 JP 5279862B2
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Description
本発明の第2の目的は、350〜450nmの波長域の紫外線によるリソグラフィ工程において用いられる、安価で耐久性に優れたペリクル膜を製造する方法を提供することにある。
更に本発明の第3の目的は、350〜450nmの波長域の紫外線によるリソグラフィ工程において用いることのできる、安価なペリクルを提供することにある。
本発明においては、前記紫外線吸収層の上に更に反射防止層を有することが好ましい。また、前記紫外線吸収層がシリコーン樹脂によって構成されることが好ましく、紫外線吸収層の屈折率は1.50以下であることが好ましい。
尚、本発明においては、前記紫外線吸収層の屈折率を1.50以下にして、紫外線吸収能と共に反射防止層としての機能を持たせることもできる。
次に、本発明のペリクル膜の製造方法について詳述する。
また、このようにして得られた本発明のペリクル膜を、接着層が付与されたペリクルフレームに接着すれば本発明のペリクルが得られる。
以下、本発明を実施例によって更に説明するが、本発明はこれによって何ら限定されるものではない。
実施例1で使用したペリクルフレームと同一のペリクルフレームを用い、ペリクルを製作した。この時使用したペリクル膜としては、上記実施例1で用いたプロピオン酸セルロースのみからなる、厚み4μmの単層膜を使用した。このペリクル膜の製造方法は、紫外線吸収層を成膜する工程だけを省略したこと以外は、実施例1と同様であった。
12 粘着層
13 接着層
14 セパレータ
15 紫外線吸収層の付いた本発明のペリクル膜
21 原料ペリクル膜
22 紫外線吸収層
23 反射防止層
40 本発明のペリクル
41 ペリクルフレーム
42 溝
43 治具穴
44 粘着層
45 接着層
46 通気穴
47 フィルタ
48 紫外線吸収層のついた本発明のペリクル膜
Claims (7)
- 350〜450nmの波長域の紫外線を照射するリソグラフィ工程において用いられるペリクル用ペリクル膜であって、該ペリクル膜が、原料ペリクル膜の少なくとも露光光源側の表面上に紫外線吸収層を有すると共に、該紫外線吸収層が、前記350〜450nmの波長域の紫外線に対する、前記波長域における平均透過率が90%以上であると共に、200〜300nmの紫外線に対する透過率が、該波長域の平均で50%以下である紫外線吸収層であることを特徴とするペリクル膜。
- 前記紫外線吸収層の上に更に反射防止層を有する、請求項1に記載されたペリクル膜。
- 前記紫外線吸収層を構成する結合樹脂がシリコーン樹脂である、請求項1又は2に記載されたペリクル膜。
- 前記紫外線吸収層の屈折率が1.50以下である、請求項1〜3に記載されたペリクル膜。
- 成膜基板上に、原料ペリクル膜、紫外線吸収層及び反射防止層の3層を任意の順序で順次設けた後、前記成膜基板を剥離させる、紫外線吸収層及び反射防止層を有するペリクル膜の製造方法であって、前記各層が、各層に対応する材料溶液を塗布した後、これを乾燥、固化させることによって順次形成されることを特徴とする、紫外線吸収層及び反射防止層を有するペリクル膜の製造方法。
- 請求項5の方法によって製造されたペリクル膜を、ペリクルフレームに張ってなることを特徴とするペリクル。
- 請求項1〜4の何れかに記載されたペリクル膜を、ペリクルフレームに張ってなることを特徴とするペリクル。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011077976A JP5279862B2 (ja) | 2011-03-31 | 2011-03-31 | ペリクル膜、その製造方法及び該膜を張ったペリクル |
KR1020120017363A KR20120111997A (ko) | 2011-03-31 | 2012-02-21 | 펠리클막, 그 제조 방법 및 그 막을 붙인 펠리클 |
TW101111217A TWI446104B (zh) | 2011-03-31 | 2012-03-30 | 防塵薄膜、其製造方法以及貼附該膜的防塵薄膜組件 |
CN201210091249.9A CN102736400B (zh) | 2011-03-31 | 2012-03-30 | 防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 |
HK13101203.6A HK1174397A1 (en) | 2011-03-31 | 2013-01-28 | Dust-prevention film, the manufacturing method thereof and the dust- prevention component with the film attached |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2011077976A JP5279862B2 (ja) | 2011-03-31 | 2011-03-31 | ペリクル膜、その製造方法及び該膜を張ったペリクル |
Publications (2)
Publication Number | Publication Date |
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JP2012212043A JP2012212043A (ja) | 2012-11-01 |
JP5279862B2 true JP5279862B2 (ja) | 2013-09-04 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011077976A Expired - Fee Related JP5279862B2 (ja) | 2011-03-31 | 2011-03-31 | ペリクル膜、その製造方法及び該膜を張ったペリクル |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5279862B2 (ja) |
KR (1) | KR20120111997A (ja) |
CN (1) | CN102736400B (ja) |
HK (1) | HK1174397A1 (ja) |
TW (1) | TWI446104B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8557017B2 (en) | 2000-12-15 | 2013-10-15 | The Arizona Board Of Regents | Method for patterning metal using nanoparticle containing precursors |
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TWI578096B (zh) * | 2013-03-22 | 2017-04-11 | V科技股份有限公司 | 校正用光罩及校正方法 |
JP6275270B2 (ja) | 2014-09-19 | 2018-02-07 | 三井化学株式会社 | ペリクル、その製造方法及び露光方法 |
JP6367342B2 (ja) | 2014-09-19 | 2018-08-01 | 三井化学株式会社 | ペリクル、ペリクルの製造方法及びペリクルを用いた露光方法 |
US10031411B2 (en) * | 2014-11-26 | 2018-07-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Pellicle for EUV mask and fabrication thereof |
JP2018049256A (ja) | 2016-04-05 | 2018-03-29 | 旭化成株式会社 | ペリクル |
TWI641783B (zh) | 2016-09-02 | 2018-11-21 | 蔡惟名 | Gas burner and its safety switch |
KR20190038369A (ko) | 2017-09-29 | 2019-04-08 | 아사히 가세이 가부시키가이샤 | 펠리클 |
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JP2938636B2 (ja) * | 1991-09-26 | 1999-08-23 | 信越化学工業株式会社 | リソグラフィ−用ペリクル |
JPH0594006A (ja) * | 1991-10-01 | 1993-04-16 | Asahi Chem Ind Co Ltd | 耐光性ペリクル |
JPH10139932A (ja) * | 1996-11-05 | 1998-05-26 | Asahi Chem Ind Co Ltd | ペリクルの製造方法及びそれにより得られたペリクル |
JP2005070120A (ja) * | 2003-08-27 | 2005-03-17 | Shin Etsu Chem Co Ltd | リソグラフィ用ペリクル |
TWI493278B (zh) * | 2008-11-21 | 2015-07-21 | Asahi Kasei E Materials Corp | A film (PELLICLE) film, a film for manufacturing a mask for manufacturing a TFT liquid crystal panel, and a film containing a film |
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2011
- 2011-03-31 JP JP2011077976A patent/JP5279862B2/ja not_active Expired - Fee Related
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2012
- 2012-02-21 KR KR1020120017363A patent/KR20120111997A/ko not_active Application Discontinuation
- 2012-03-30 TW TW101111217A patent/TWI446104B/zh not_active IP Right Cessation
- 2012-03-30 CN CN201210091249.9A patent/CN102736400B/zh not_active Expired - Fee Related
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2013
- 2013-01-28 HK HK13101203.6A patent/HK1174397A1/xx not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8557017B2 (en) | 2000-12-15 | 2013-10-15 | The Arizona Board Of Regents | Method for patterning metal using nanoparticle containing precursors |
US8779030B2 (en) | 2000-12-15 | 2014-07-15 | The Arizona Board of Regents, The University of Arizone | Method for patterning metal using nanoparticle containing precursors |
Also Published As
Publication number | Publication date |
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JP2012212043A (ja) | 2012-11-01 |
TWI446104B (zh) | 2014-07-21 |
TW201305721A (zh) | 2013-02-01 |
HK1174397A1 (en) | 2013-06-07 |
KR20120111997A (ko) | 2012-10-11 |
CN102736400A (zh) | 2012-10-17 |
CN102736400B (zh) | 2014-02-05 |
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