CN102736400B - 防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 - Google Patents

防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 Download PDF

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Publication number
CN102736400B
CN102736400B CN201210091249.9A CN201210091249A CN102736400B CN 102736400 B CN102736400 B CN 102736400B CN 201210091249 A CN201210091249 A CN 201210091249A CN 102736400 B CN102736400 B CN 102736400B
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CN
China
Prior art keywords
dustproof film
dustproof
absorbing layer
film
layer
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Expired - Fee Related
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CN201210091249.9A
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English (en)
Chinese (zh)
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CN102736400A (zh
Inventor
関原一敏
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Shin Etsu Chemical Co Ltd
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Shin Etsu Chemical Co Ltd
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Publication of CN102736400A publication Critical patent/CN102736400A/zh
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Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
CN201210091249.9A 2011-03-31 2012-03-30 防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件 Expired - Fee Related CN102736400B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-077976 2011-03-31
JP2011077976A JP5279862B2 (ja) 2011-03-31 2011-03-31 ペリクル膜、その製造方法及び該膜を張ったペリクル

Publications (2)

Publication Number Publication Date
CN102736400A CN102736400A (zh) 2012-10-17
CN102736400B true CN102736400B (zh) 2014-02-05

Family

ID=46992129

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210091249.9A Expired - Fee Related CN102736400B (zh) 2011-03-31 2012-03-30 防尘薄膜、其制造方法以及用该膜贴付的防尘薄膜组件

Country Status (5)

Country Link
JP (1) JP5279862B2 (ja)
KR (1) KR20120111997A (ja)
CN (1) CN102736400B (ja)
HK (1) HK1174397A1 (ja)
TW (1) TWI446104B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4463473B2 (ja) 2000-12-15 2010-05-19 ジ・アリゾナ・ボード・オブ・リージェンツ 前駆体を含有するナノ粒子を用いた金属のパターニング方法
TWI578096B (zh) * 2013-03-22 2017-04-11 V科技股份有限公司 校正用光罩及校正方法
EP3196700B1 (en) 2014-09-19 2019-01-30 Mitsui Chemicals, Inc. Pellicle, pellicle production method and exposure method using pellicle
JP6275270B2 (ja) 2014-09-19 2018-02-07 三井化学株式会社 ペリクル、その製造方法及び露光方法
US10031411B2 (en) 2014-11-26 2018-07-24 Taiwan Semiconductor Manufacturing Company, Ltd. Pellicle for EUV mask and fabrication thereof
KR101970059B1 (ko) 2016-04-05 2019-04-17 아사히 가세이 가부시키가이샤 펠리클
TWI641783B (zh) 2016-09-02 2018-11-21 蔡惟名 Gas burner and its safety switch
KR20190038369A (ko) 2017-09-29 2019-04-08 아사히 가세이 가부시키가이샤 펠리클
KR20210146491A (ko) * 2020-05-26 2021-12-06 삼성디스플레이 주식회사 이송 복합체 및 이를 포함하는 이송 모듈

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0588359A (ja) * 1991-09-26 1993-04-09 Shin Etsu Chem Co Ltd リソグラフイ−用ペリクル
JPH10139932A (ja) * 1996-11-05 1998-05-26 Asahi Chem Ind Co Ltd ペリクルの製造方法及びそれにより得られたペリクル
CN1591181A (zh) * 2003-08-27 2005-03-09 信越化学工业株式会社 光刻用掩模护层
WO2010058586A1 (ja) * 2008-11-21 2010-05-27 旭化成イーマテリアルズ株式会社 ペリクル膜、ｔｆｔ液晶パネル製造用マスクとともに用いるペリクル、及び該ペリクルを含むフォトマスク

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0594006A (ja) * 1991-10-01 1993-04-16 Asahi Chem Ind Co Ltd 耐光性ペリクル

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0588359A (ja) * 1991-09-26 1993-04-09 Shin Etsu Chem Co Ltd リソグラフイ−用ペリクル
JPH10139932A (ja) * 1996-11-05 1998-05-26 Asahi Chem Ind Co Ltd ペリクルの製造方法及びそれにより得られたペリクル
CN1591181A (zh) * 2003-08-27 2005-03-09 信越化学工业株式会社 光刻用掩模护层
WO2010058586A1 (ja) * 2008-11-21 2010-05-27 旭化成イーマテリアルズ株式会社 ペリクル膜、ｔｆｔ液晶パネル製造用マスクとともに用いるペリクル、及び該ペリクルを含むフォトマスク

Also Published As

Publication number Publication date
JP2012212043A (ja) 2012-11-01
TW201305721A (zh) 2013-02-01
JP5279862B2 (ja) 2013-09-04
CN102736400A (zh) 2012-10-17
HK1174397A1 (en) 2013-06-07
TWI446104B (zh) 2014-07-21
KR20120111997A (ko) 2012-10-11

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