JP5278513B2 - 弾性波素子 - Google Patents
弾性波素子 Download PDFInfo
- Publication number
- JP5278513B2 JP5278513B2 JP2011194510A JP2011194510A JP5278513B2 JP 5278513 B2 JP5278513 B2 JP 5278513B2 JP 2011194510 A JP2011194510 A JP 2011194510A JP 2011194510 A JP2011194510 A JP 2011194510A JP 5278513 B2 JP5278513 B2 JP 5278513B2
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- JP
- Japan
- Prior art keywords
- silicon oxide
- oxide film
- film
- acoustic wave
- piezoelectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 66
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 66
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 54
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- 229910052710 silicon Inorganic materials 0.000 claims description 35
- 239000010703 silicon Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 31
- 229910052786 argon Inorganic materials 0.000 claims description 27
- 230000001902 propagating effect Effects 0.000 claims description 4
- 230000000052 comparative effect Effects 0.000 description 11
- 230000032683 aging Effects 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000035882 stress Effects 0.000 description 5
- 238000010897 surface acoustic wave method Methods 0.000 description 5
- 239000011800 void material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
2 櫛形電極
3 酸化ケイ素膜
4 酸化窒化ケイ素膜
22 櫛形電極
1001 弾性波素子
Claims (2)
- 圧電基板と、前記圧電基板上に設けられた櫛形電極と、前記櫛形電極を覆い、アルゴンを含有する酸化ケイ素膜と、前記酸化ケイ素膜上に設けられた酸化窒化ケイ素膜と、を備え、前記酸化ケイ素膜の膜厚Hと前記圧電基板を伝播する弾性波の波長λはH/λ≧0.15の関係を満たし、前記酸化窒化ケイ素膜の膜厚は3nm以上であり、前記櫛形電極を覆う膜は酸化ケイ素膜と酸化窒化ケイ素膜の2層構造である弾性波素子。
- 圧電基板と、前記圧電基板上に設けられた櫛形電極と、前記櫛形電極を覆い、アルゴンを含有する酸化ケイ素膜と、前記酸化ケイ素膜上に設けられた酸化窒化ケイ素膜と、を備え、前記酸化ケイ素膜の膜厚Hと前記圧電基板を伝播する弾性波の波長λはH/λ≧0.15の関係を満たし、前記酸化窒化ケイ素膜の膜厚は3nm以上であり、前記酸化窒化ケイ素膜の膜厚は12nm以下である弾性波素子。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011194510A JP5278513B2 (ja) | 2007-05-25 | 2011-09-07 | 弾性波素子 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007138591 | 2007-05-25 | ||
JP2007138591 | 2007-05-25 | ||
JP2008082801 | 2008-03-27 | ||
JP2008082801 | 2008-03-27 | ||
JP2011194510A JP5278513B2 (ja) | 2007-05-25 | 2011-09-07 | 弾性波素子 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009516166A Division JP4868063B2 (ja) | 2007-05-25 | 2008-05-09 | 弾性波素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011254549A JP2011254549A (ja) | 2011-12-15 |
JP5278513B2 true JP5278513B2 (ja) | 2013-09-04 |
Family
ID=40074727
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009516166A Active JP4868063B2 (ja) | 2007-05-25 | 2008-05-09 | 弾性波素子 |
JP2011194510A Active JP5278513B2 (ja) | 2007-05-25 | 2011-09-07 | 弾性波素子 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009516166A Active JP4868063B2 (ja) | 2007-05-25 | 2008-05-09 | 弾性波素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7928633B2 (ja) |
EP (1) | EP2109218A4 (ja) |
JP (2) | JP4868063B2 (ja) |
CN (1) | CN101669285B (ja) |
WO (1) | WO2008146449A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010116995A1 (ja) * | 2009-04-07 | 2010-10-14 | 株式会社村田製作所 | 弾性境界波共振子及びラダー型フィルタ |
JP5625648B2 (ja) * | 2010-09-08 | 2014-11-19 | 株式会社村田製作所 | 酸窒化シリコン膜の成膜方法及び弾性境界波装置の製造方法 |
WO2012132238A1 (en) | 2011-03-25 | 2012-10-04 | Panasonic Corporation | Acoustic wave device with reduced higher order transverse modes |
JP5747987B2 (ja) * | 2011-08-08 | 2015-07-15 | 株式会社村田製作所 | 弾性波装置 |
US11522515B2 (en) | 2017-03-16 | 2022-12-06 | Skyworks Solutions, Inc. | Acoustic wave device including interdigital electrodes covered by silicon oxynitride film |
JP2018182354A (ja) * | 2017-04-03 | 2018-11-15 | 株式会社村田製作所 | 弾性波装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3293408B2 (ja) * | 1995-06-01 | 2002-06-17 | 松下電器産業株式会社 | Sawデバイスおよびその製造方法 |
JP2914282B2 (ja) * | 1996-03-25 | 1999-06-28 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3445971B2 (ja) * | 2000-12-14 | 2003-09-16 | 富士通株式会社 | 弾性表面波素子 |
EP1239588A2 (en) * | 2001-03-04 | 2002-09-11 | Kazuhiko Yamanouchi | Surface acoustic wave substrate and surface acoustic wave functional element |
JP4109877B2 (ja) | 2001-03-04 | 2008-07-02 | 和彦 山之内 | 弾性表面波機能素子 |
WO2002082644A1 (fr) * | 2001-03-30 | 2002-10-17 | Mitsubishi Denki Kabushiki Kaisha | Dispositif d'onde acoustique et procede de fabrication correspondant |
JP3925366B2 (ja) | 2001-10-17 | 2007-06-06 | 株式会社村田製作所 | 弾性表面波装置およびその製造方法 |
JP2005150228A (ja) * | 2003-11-12 | 2005-06-09 | Matsushita Electric Ind Co Ltd | 半導体装置の製造方法 |
WO2005083881A1 (ja) * | 2004-03-02 | 2005-09-09 | Murata Manufacturing Co., Ltd. | 弾性表面波装置 |
JP4461910B2 (ja) * | 2004-06-03 | 2010-05-12 | 株式会社村田製作所 | 弾性波装置の製造方法 |
JP4329740B2 (ja) * | 2004-10-22 | 2009-09-09 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置の製造方法、及び有機エレクトロルミネッセンス装置 |
JP2007028297A (ja) * | 2005-07-19 | 2007-02-01 | Seiko Epson Corp | Sawデバイスの製造方法 |
JP5125729B2 (ja) * | 2008-04-28 | 2013-01-23 | パナソニック株式会社 | 弾性波素子と、これを用いたフィルタ及び電子機器 |
-
2008
- 2008-05-09 CN CN2008800139924A patent/CN101669285B/zh active Active
- 2008-05-09 US US12/532,426 patent/US7928633B2/en active Active
- 2008-05-09 EP EP08751689A patent/EP2109218A4/en not_active Withdrawn
- 2008-05-09 WO PCT/JP2008/001165 patent/WO2008146449A1/ja active Application Filing
- 2008-05-09 JP JP2009516166A patent/JP4868063B2/ja active Active
-
2011
- 2011-09-07 JP JP2011194510A patent/JP5278513B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
WO2008146449A1 (ja) | 2008-12-04 |
US7928633B2 (en) | 2011-04-19 |
EP2109218A1 (en) | 2009-10-14 |
CN101669285B (zh) | 2013-01-02 |
CN101669285A (zh) | 2010-03-10 |
JPWO2008146449A1 (ja) | 2010-08-19 |
US20100060101A1 (en) | 2010-03-11 |
JP4868063B2 (ja) | 2012-02-01 |
JP2011254549A (ja) | 2011-12-15 |
EP2109218A4 (en) | 2012-11-28 |
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