JP5269163B2 - 精密に制御された元素組成物を有する蛍光体を提供する方法、同方法で提供された蛍光体、蛍光体、及び該蛍光体を含む発光デバイス - Google Patents
精密に制御された元素組成物を有する蛍光体を提供する方法、同方法で提供された蛍光体、蛍光体、及び該蛍光体を含む発光デバイス Download PDFInfo
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims description 157
- 238000000034 method Methods 0.000 title claims description 45
- 239000000203 mixture Substances 0.000 title claims description 31
- 238000005245 sintering Methods 0.000 claims description 44
- 239000011575 calcium Substances 0.000 claims description 38
- 239000002994 raw material Substances 0.000 claims description 34
- 239000000853 adhesive Substances 0.000 claims description 32
- 230000001070 adhesive effect Effects 0.000 claims description 32
- 229910052712 strontium Inorganic materials 0.000 claims description 29
- 229910052791 calcium Inorganic materials 0.000 claims description 23
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 22
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 19
- 229910052693 Europium Inorganic materials 0.000 claims description 19
- -1 alkaline earth metal nitrides Chemical class 0.000 claims description 18
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 229910052582 BN Inorganic materials 0.000 claims description 14
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 239000012298 atmosphere Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- 229910052810 boron oxide Inorganic materials 0.000 claims description 5
- 230000001590 oxidative effect Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 238000009877 rendering Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 4
- 229910001940 europium oxide Inorganic materials 0.000 description 4
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 4
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 4
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229940110728 nitrogen / oxygen Drugs 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000004570 mortar (masonry) Substances 0.000 description 2
- 150000003891 oxalate salts Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- AFCIMSXHQSIHQW-UHFFFAOYSA-N [O].[P] Chemical compound [O].[P] AFCIMSXHQSIHQW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000005090 crystal field Methods 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
- C09K11/77348—Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- Chemical & Material Sciences (AREA)
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- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Description
(A)本体と閉鎖部材を含む焼結用ホルダを提供し、ここで、本体は焼結スペースを有し、閉鎖部材は焼結スペースを閉鎖するために使用され;
(B)蛍光体の原料を本体の焼結スペースに置き;
(C)本体と閉鎖部材の少なくとも1つに接着剤をコートし; そして
(D)原料を含む焼結ホルダを、非酸化性ガス雰囲気下で加熱して蛍光体を得る;
ことを含む。
[式1]:CaaSrbAlcSidOeNf:Eug
ここで、0≦a<1、0≦b<1、c=1、0.8≦d≦1.2、0≦e≦0.5、2.5≦f≦3.1、0.002≦g≦0.020、a及びbは、同時に共に0ではない;及び、
455nmの波長光により励起された蛍光体から放出された光のCIE1931色度座標(x、y)は、以下の式を満足する:
x=[(−0.1059b3+0.068b2−0.06b)+(2152.8g3−309.2g2+8.2943g)+0.6324]±0.01;
y=[(0.1295b3−0.0968b2+0.0702b)+(−3299.2g3+311.08g2−7.9266g)+0.3621]±0.01。
(A):本体と閉鎖部材を含む焼結ホルダを提供し、ここで、本体は焼結スペースを有し、閉鎖部材は焼結スペースを閉鎖するために使用される;
(B):本体の焼結スペース内に蛍光体の原料を置く;
(C):本体と閉鎖部材の少なくとも1つに接着剤をコートし、かつ閉鎖部材を本体に取り付けて焼結スペースを閉鎖する、;及び
(D):原料を有する焼結ホルダを非酸化性ガス雰囲気下で加熱して蛍光体を得る;
工程を含む。
[式1]CaaSrbAlcSidOeNf:Eug;
ここで、0≦a<1、0≦b<1、c=1、0.8≦d≦1.2、0≦e≦0.5、2.5≦f≦3.1、0.002≦g≦0.020、並びに、a及びbは、同時に共に0ではない;
ここで、
好ましくは、0.05≦a≦0.9;
好ましくは、0.10≦b≦0.95;
好ましくは、0.15≦a+b<1;
好ましくは、0.1≦a/b≦10;
好ましくは、0.9≦d≦1.1;
好ましくは、0≦e≦0.3;
好ましくは、2.7≦f≦3.0;
である。
0.277モルのCa3N2、0.054モルのSr3N2、1モルのAlN(純度3N)、0.333モルのSi3N4(純度3N)、及び0.004モルのEu2O3(純度4N)を、窒素環境下でグローブボックス内の乳鉢で混合し、蛍光体原料を得た。
Ca3N2、Sr3N2、AlN、Si3N4、Al2O3、及びEu2O3の量を変えること以外は、実施例1で用いた同じ工程を蛍光体を提供するために本実施例2で用いた。対応する条件(即ち、量)は、表1に、リストアップした。蛍光体を窒素/酸素分析計及び誘導結合プラズマ原子発光分析(ICP−AES)で分析し、結果より、蛍光体は、Ca0.625Sr0.2972Al1Si0.997N2.851O0.171:Eu0.008 として表わすことができた。
Ca3N2、Sr3N2、AlN、Si3N4、Al2O3、及びEu2O3の量を変えること以外は、実施例1で用いた同じ工程を蛍光体を提供するために本実施例3〜15で用いた。対応する条件(即ち、量)は、表1に、リストアップした。実施例3〜15のこれらに蛍光体の分析項目は、表2にリストアップした。
Ca3N2、Sr3N2、AlN、Si3N4、及びEu2O3の量を変え、そして比較例1〜5における焼結工程が非気密条件で進行すること以外は、実施例1で用いた同じ工程を、蛍光体を提供するために、比較例1〜7で用いた。対応する条件(即ち、量)は表1にリストアップした。比較例1〜7のこれらの蛍光体の分析項目は表2にリストアップした。
1.輝度及び色度座標の分析:波長455nmのLED光源及び輝度計は、輝度及び色度座標を測定するために用いた。輝度測定偏差は、±0.3%又はそれ以下であり、色度座標測定偏差は、±0.0005%又はそれ以下であった。サンプルホルダは、測定のため、硫酸バリウム及び実施例1〜15及び比較例1〜7で充填され、無作為に分配された。
2−1.誘導結合プラズマ原子発光分析計(Jobin YVON; ULTIM-2):
0.1gの実施例1〜15及び比較例1〜7の蛍光体を、それぞれ白金るつぼ内に置き、1gの炭酸ナトリウム(Na2CO3)を加え、蛍光体と混合し、その後、混合物を高温炉に移し、1200℃で溶融した(温度を室温から、2時間で1200℃に到達するまで昇温し、1200℃で5時間保持した)。その後、温度を冷却し、25mlの36wt%塩酸を加え、次いで、300℃に加熱し、溶液が透明になるまで溶融した。溶液を、100mlの体積フラスコに移し、水を標線まで加え、後述の測定を進めた。
実施例1及び2の蛍光体20mgをスズカプセルに移し、そして測定のためるつぼに置いた。
Beckman Coulter Multisizer-3 カウンタを、コールタ法で分析するために用いた。D50は、所定値より小さいサイズを有する粒子の累積体積が全体積の50%であることを表わす。
Claims (16)
- 精密に制御された元素組成を有する蛍光体を提供する方法であって:
(A)本体と閉鎖部材を含む焼結ホルダを提供し、ここで、本体は焼結スペースを有し、そして閉鎖部材は焼結スペースを閉鎖するために使用され;
(B)蛍光体の原料を本体の焼結スペース内に置き、但し、前記原料のカルシウム源、ストロンチウム源、アルミニウム源、ケイ素源、及びユウロピウム源中のカルシウム、ストロンチウム、アルミニウム、ケイ素、及びユウロピウム間のモル比が、[カルシウム:ストロンチウム:アルミニウム:ケイ素:ユウロピウム]=[(0.01〜0.999):(0〜0.99):(0.95〜1):1:(0.002〜0.02)]である;
(C)接着剤を本体と閉鎖部材の少なくとも1つにコートし、但し、前記接着剤が、窒化ホウ素、並びにアルカリ土類金属窒化物及び酸化ホウ素から成るグループから選択される少なくとも1つを含む;及び
(D)原料を含む焼結ホルダを、非酸化性ガス雰囲気下で加熱して蛍光体を得る;
工程を含む方法。 - 工程(D)において、接着剤がコンパクトな構造を形成するために硬化される請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- 工程(D)において、接着剤が、焼結スペースを気密にするために本体及び閉鎖部材をシールするように使われる請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- 窒化ホウ素の含量が、接着剤1モル毎に、0.5モル又はそれ以上の窒化ホウ素を含有する請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- 工程(D)において、加熱が0.5MPa又はそれ以下の圧力下で実施される請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- 工程(D)において、加熱温度が1200℃〜2200℃の範囲である請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- 工程(D)において、昇温速度が3℃/分〜15℃/分の範囲内である請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- 工程(D)において、加熱の期間が1時間〜12時間の範囲内である請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- アルミニウム源、ケイ素源、ユウロピウム源、カルシウム源、及びストロンチウム源が、それぞれ、アルミニウムの窒化物、ケイ素の窒化物、ユウロピウムの酸化物、カルシウムの窒化物、及びストロンチウムの窒化物である請求項1に記載の精密に制御された元素組成を有する蛍光体を提供する方法。
- [式1]で表され;
[式1]:CaaSrbAlcSidOeNf:Eug;
ここで、0≦a<1、0.1≦b<1、c=1、0.8≦d≦1.2、0≦e≦0.5、2.5≦f≦3.1、0.002≦g≦0.020、a及びbは、同時に共に0ではない;及び
455nmの波長光で励起される蛍光体から放出される光のCIE1931色度座標(x、y)が、以下の式:
x=[(−0.1059b3+0.068b2−0.06b)+(2152.8g3−309.2g2+8.2943g)+0.6324]±0.01;
y=[(0.1295b3−0.0968b2+0.0702b)+(−3299.2g3+311.08g2−7.9266g)+0.3621]±0.01;
を満足する;
蛍光体。 - 1ユニットの硫酸バリウムに波長455nmの光を放射することにより反射される光を基準にして、蛍光体の対応する輝度が55ユニットから235ユニットの範囲内である請求項10に記載の蛍光体。
- 蛍光体から放出される光のCIE1931色度座標(x、y)が、0.670≦x≦0.683、0.315≦y≦0.326を満足する請求項10に記載の蛍光体。
- 0.1≦b≦0.95である請求項10に記載の蛍光体。
- 0.005≦g≦0.016である請求項10に記載の蛍光体。
- 発光素子を含む発光ユニット、及び請求項10に記載の蛍光体を含む発光デバイス。
- 発光素子から放出される光の波長が、300nm〜500nmの範囲である請求項15に記載の発光デバイス。
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TW099135364A TWI393763B (zh) | 2010-10-15 | 2010-10-15 | A phosphor and a light emitting device |
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TW100110357A TWI431098B (zh) | 2011-03-25 | 2011-03-25 | 精確控制燒成之螢光體結構成分比例的方法、其製得之螢光體及含有該螢光體之發光裝置 |
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JP2015196708A (ja) * | 2014-03-31 | 2015-11-09 | 三菱化学株式会社 | 蛍光体、蛍光体含有組成物、発光装置、画像表示装置及び照明装置 |
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