JP5265451B2 - 成膜方法および発光装置の作製方法 - Google Patents

成膜方法および発光装置の作製方法 Download PDF

Info

Publication number
JP5265451B2
JP5265451B2 JP2009131306A JP2009131306A JP5265451B2 JP 5265451 B2 JP5265451 B2 JP 5265451B2 JP 2009131306 A JP2009131306 A JP 2009131306A JP 2009131306 A JP2009131306 A JP 2009131306A JP 5265451 B2 JP5265451 B2 JP 5265451B2
Authority
JP
Japan
Prior art keywords
layer
light
substrate
light absorption
organic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009131306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010010127A5 (enExample
JP2010010127A (ja
Inventor
舜平 山崎
幸一郎 田中
寿雄 池田
哲史 瀬尾
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2009131306A priority Critical patent/JP5265451B2/ja
Publication of JP2010010127A publication Critical patent/JP2010010127A/ja
Publication of JP2010010127A5 publication Critical patent/JP2010010127A5/ja
Application granted granted Critical
Publication of JP5265451B2 publication Critical patent/JP5265451B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009131306A 2008-05-29 2009-05-29 成膜方法および発光装置の作製方法 Expired - Fee Related JP5265451B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009131306A JP5265451B2 (ja) 2008-05-29 2009-05-29 成膜方法および発光装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008141521 2008-05-29
JP2008141521 2008-05-29
JP2009131306A JP5265451B2 (ja) 2008-05-29 2009-05-29 成膜方法および発光装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013096260A Division JP2013145766A (ja) 2008-05-29 2013-05-01 発光装置の作製方法

Publications (3)

Publication Number Publication Date
JP2010010127A JP2010010127A (ja) 2010-01-14
JP2010010127A5 JP2010010127A5 (enExample) 2012-07-12
JP5265451B2 true JP5265451B2 (ja) 2013-08-14

Family

ID=41380166

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2009131306A Expired - Fee Related JP5265451B2 (ja) 2008-05-29 2009-05-29 成膜方法および発光装置の作製方法
JP2013096260A Withdrawn JP2013145766A (ja) 2008-05-29 2013-05-01 発光装置の作製方法
JP2015005128A Withdrawn JP2015092509A (ja) 2008-05-29 2015-01-14 発光装置の作製方法

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013096260A Withdrawn JP2013145766A (ja) 2008-05-29 2013-05-01 発光装置の作製方法
JP2015005128A Withdrawn JP2015092509A (ja) 2008-05-29 2015-01-14 発光装置の作製方法

Country Status (3)

Country Link
US (1) US8802185B2 (enExample)
JP (3) JP5265451B2 (enExample)
KR (1) KR101629637B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653709B2 (en) * 2012-11-20 2017-05-16 The Regents Of The University Of Michigan Optoelectronic device formed with controlled vapor flow
JP5880679B2 (ja) * 2014-07-16 2016-03-09 住友化学株式会社 発光素子の製造方法
EP3226656B1 (en) * 2015-06-15 2020-11-25 Sumitomo Chemical Company Limited Method of manufacturing organic el element
EP3611234B1 (en) * 2017-05-19 2023-06-21 Institute of Chemistry, Chinese Academy of Science Ink for producing laser light sources

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3222518B2 (ja) * 1991-12-26 2001-10-29 キヤノン株式会社 液体原料気化装置および薄膜形成装置
JP3034438B2 (ja) * 1994-03-31 2000-04-17 キヤノン株式会社 カラーフィルタの製造装置
KR100195175B1 (ko) 1996-12-23 1999-06-15 손욱 유기전자발광소자 유기박막용 도너필름, 이를 이용한 유기전자발광소자의 제조방법 및 그 방법에 따라 제조된 유기전자발광소자
US6220912B1 (en) * 1997-05-09 2001-04-24 Canon Kabushiki Kaisha Method and apparatus for producing electron source using dispenser to produce electron emitting portions
US5851709A (en) * 1997-10-31 1998-12-22 Eastman Kodak Company Method for selective transfer of a color organic layer
JP4547723B2 (ja) 1998-03-09 2010-09-22 セイコーエプソン株式会社 有機ｅｌ表示装置の製造方法
JP2000195665A (ja) 1998-12-25 2000-07-14 Toyota Motor Corp 有機膜の形成方法
US7288420B1 (en) * 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
TW512543B (en) * 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
TW504941B (en) * 1999-07-23 2002-10-01 Semiconductor Energy Lab Method of fabricating an EL display device, and apparatus for forming a thin film
JP4854840B2 (ja) 1999-10-12 2012-01-18 株式会社半導体エネルギー研究所 発光装置の作製方法
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW468283B (en) * 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
JP4590663B2 (ja) * 1999-10-29 2010-12-01 セイコーエプソン株式会社 カラーフィルタの製造方法
JP2002075640A (ja) 2000-08-30 2002-03-15 Dainippon Screen Mfg Co Ltd 有機ｅｌ表示装置の製造方法およびその製造装置
US6699597B2 (en) * 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
JP2004071554A (ja) * 2002-07-25 2004-03-04 Sanyo Electric Co Ltd 有機ｅｌパネルおよびその製造方法
JP2004087143A (ja) 2002-08-22 2004-03-18 Sony Corp 転写基板、転写装置および転写方法
KR100579174B1 (ko) 2003-12-22 2006-05-11 삼성에스디아이 주식회사 레이저 전사용 도너 필름 및 그 필름을 사용하여 제조되는유기 전계 발광 소자
KR100708644B1 (ko) * 2004-02-26 2007-04-17 삼성에스디아이 주식회사 박막 트랜지스터, 이를 구비한 평판 표시장치, 박막트랜지스터의 제조방법, 평판 표시장치의 제조방법, 및도너 시트의 제조방법
JP2006086069A (ja) * 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
KR100793355B1 (ko) * 2004-10-05 2008-01-11 삼성에스디아이 주식회사 도너 기판의 제조방법 및 유기전계발광표시장치의 제조방법
KR100667069B1 (ko) * 2004-10-19 2007-01-10 삼성에스디아이 주식회사 도너 기판 및 그를 사용한 유기전계발광표시장치의 제조방법
JP2006228649A (ja) * 2005-02-21 2006-08-31 Seiko Epson Corp 有機ｅｌ装置の製造方法、蒸着ボート
KR20060109373A (ko) * 2005-04-15 2006-10-20 삼성전기주식회사 유기전자소자 제조방법
JP2006309955A (ja) 2005-04-26 2006-11-09 Sony Corp 有機電界発光素子の製造方法および有機電界発光素子
JP2006309995A (ja) * 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
TWI307612B (en) * 2005-04-27 2009-03-11 Sony Corp Transfer method and transfer apparatus
JPWO2007015465A1 (ja) * 2005-08-01 2009-02-19 パイオニア株式会社 有機膜被熱転写体製造方法、有機膜被熱転写体
JP4449890B2 (ja) * 2005-11-21 2010-04-14 ソニー株式会社 転写用基板および転写方法ならびに表示装置の製造方法
KR101109195B1 (ko) * 2005-12-19 2012-01-30 삼성전자주식회사 3차원 구조의 발광소자 및 그의 제조방법
KR20070073457A (ko) * 2006-01-05 2007-07-10 삼성에스디아이 주식회사 유기 전계 발광소자용 도너 필름의 제조 방법 및 이를이용한 유기 전계 발광소자의 제조 방법
JP5016831B2 (ja) * 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5013048B2 (ja) * 2006-04-06 2012-08-29 ソニー株式会社 赤色有機発光素子およびこれを備えた表示装置
TWI427702B (zh) * 2006-07-28 2014-02-21 Semiconductor Energy Lab 顯示裝置的製造方法
TWI412079B (zh) * 2006-07-28 2013-10-11 Semiconductor Energy Lab 製造顯示裝置的方法
US7994021B2 (en) * 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR101346246B1 (ko) * 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US8563431B2 (en) * 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2008059824A (ja) * 2006-08-30 2008-03-13 Fuji Electric Holdings Co Ltd アクティブマトリックス型有機ｅｌパネルおよびその製造方法
US8148259B2 (en) * 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4245054B2 (ja) * 2007-01-26 2009-03-25 セイコーエプソン株式会社 画素内機能液の形態測定方法、画素内機能液の形態測定装置および液滴吐出装置、並びに電気光学装置の製造方法、電気光学装置および電子機器
KR101563237B1 (ko) * 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
KR20090028413A (ko) * 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
US8153201B2 (en) * 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
KR20090041316A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
KR20090041314A (ko) * 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
US8425974B2 (en) * 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
KR101689519B1 (ko) * 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) * 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device

Also Published As

Publication number Publication date
US8802185B2 (en) 2014-08-12
KR101629637B1 (ko) 2016-06-13
US20090297694A1 (en) 2009-12-03
JP2010010127A (ja) 2010-01-14
KR20090124948A (ko) 2009-12-03
JP2015092509A (ja) 2015-05-14
JP2013145766A (ja) 2013-07-25

Similar Documents

Publication Publication Date Title
JP5568578B2 (ja) 発光装置の作製方法
KR101011346B1 (ko) 발광 장치 및 그 제작 방법
US8558453B2 (en) Active matrix display device
US8932682B2 (en) Method for manufacturing a light emitting device
CN101916824B (zh) 转印基板和制造显示设备的方法
JP4651916B2 (ja) 発光装置の作製方法
JP2004031201A (ja) 半導体装置およびその作製方法
US8409672B2 (en) Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
CN102054939B (zh) 有机发光二极管显示器的制造方法
JP2015156379A (ja) 発光装置の作製方法
JP2004247279A (ja) 有機ｅｌ装置の製造方法及び電子機器
JP4545385B2 (ja) 発光装置の作製方法
JP2005197027A (ja) 有機ｅｌ装置の製造方法、有機ｅｌ装置、及び電子機器
JP5265451B2 (ja) 成膜方法および発光装置の作製方法
JP2008235011A (ja) 表示装置の製造方法
JP4081580B2 (ja) 表示装置の作製方法
JP4120259B2 (ja) 表示装置及び電子機器
JP2006148082A (ja) 配線基板及び半導体装置の作製方法
JP2006261026A (ja) 電気光学装置の製造方法および電気光学装置
JP2003007459A (ja) インクジェット方式によるパターン形成用組成物並びに発光装置の作製方法
JP2004087465A (ja) 発光装置の作製方法
JP2007311238A (ja) 発光装置の製造方法
JP2009054522A (ja) 表示装置の製造装置及び表示装置の製造方法
JP2005011578A (ja) 発光装置の作製方法
JP2007250242A (ja) 発光装置、膜形成方法及び電子機器

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120528

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120528

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130129

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130130

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130311

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130416

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130501

R150 Certificate of patent or registration of utility model

Ref document number: 5265451

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees