KR101629637B1 - 성막방법 및 발광장치의 제조방법 - Google Patents

성막방법 및 발광장치의 제조방법 Download PDF

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Publication number
KR101629637B1
KR101629637B1 KR1020090045754A KR20090045754A KR101629637B1 KR 101629637 B1 KR101629637 B1 KR 101629637B1 KR 1020090045754 A KR1020090045754 A KR 1020090045754A KR 20090045754 A KR20090045754 A KR 20090045754A KR 101629637 B1 KR101629637 B1 KR 101629637B1
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layer
substrate
light
organic compound
light absorbing
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KR20090124948A (ko
Inventor
순페이 야마자키
코이치로 타나카
히사오 이케다
사토시 세오
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/10Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020090045754A 2008-05-29 2009-05-26 성막방법 및 발광장치의 제조방법 Expired - Fee Related KR101629637B1 (ko)

Applications Claiming Priority (2)

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JPJP-P-2008-141521 2008-05-29
JP2008141521 2008-05-29

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KR20090124948A KR20090124948A (ko) 2009-12-03
KR101629637B1 true KR101629637B1 (ko) 2016-06-13

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US (1) US8802185B2 (enExample)
JP (3) JP5265451B2 (enExample)
KR (1) KR101629637B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653709B2 (en) * 2012-11-20 2017-05-16 The Regents Of The University Of Michigan Optoelectronic device formed with controlled vapor flow
JP5880679B2 (ja) * 2014-07-16 2016-03-09 住友化学株式会社 発光素子の製造方法
KR101775315B1 (ko) * 2015-06-15 2017-09-05 스미또모 가가꾸 가부시키가이샤 유기 el 소자의 제조 방법
WO2018210143A1 (zh) * 2017-05-19 2018-11-22 中国科学院化学研究所 一种激光面板、激光阵列装置及激光显示器

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228649A (ja) * 2005-02-21 2006-08-31 Seiko Epson Corp 有機el装置の製造方法、蒸着ボート

Family Cites Families (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3222518B2 (ja) * 1991-12-26 2001-10-29 キヤノン株式会社 液体原料気化装置および薄膜形成装置
JP3034438B2 (ja) 1994-03-31 2000-04-17 キヤノン株式会社 カラーフィルタの製造装置
KR100195175B1 (ko) 1996-12-23 1999-06-15 손욱 유기전자발광소자 유기박막용 도너필름, 이를 이용한 유기전자발광소자의 제조방법 및 그 방법에 따라 제조된 유기전자발광소자
US6220912B1 (en) 1997-05-09 2001-04-24 Canon Kabushiki Kaisha Method and apparatus for producing electron source using dispenser to produce electron emitting portions
US5851709A (en) * 1997-10-31 1998-12-22 Eastman Kodak Company Method for selective transfer of a color organic layer
JP4547723B2 (ja) 1998-03-09 2010-09-22 セイコーエプソン株式会社 有機el表示装置の製造方法
JP2000195665A (ja) 1998-12-25 2000-07-14 Toyota Motor Corp 有機膜の形成方法
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
TW512543B (en) 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
TW504941B (en) 1999-07-23 2002-10-01 Semiconductor Energy Lab Method of fabricating an EL display device, and apparatus for forming a thin film
JP4854840B2 (ja) 1999-10-12 2012-01-18 株式会社半導体エネルギー研究所 発光装置の作製方法
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
JP4590663B2 (ja) 1999-10-29 2010-12-01 セイコーエプソン株式会社 カラーフィルタの製造方法
JP2002075640A (ja) 2000-08-30 2002-03-15 Dainippon Screen Mfg Co Ltd 有機el表示装置の製造方法およびその製造装置
US6699597B2 (en) 2001-08-16 2004-03-02 3M Innovative Properties Company Method and materials for patterning of an amorphous, non-polymeric, organic matrix with electrically active material disposed therein
JP2004071554A (ja) 2002-07-25 2004-03-04 Sanyo Electric Co Ltd 有機elパネルおよびその製造方法
JP2004087143A (ja) 2002-08-22 2004-03-18 Sony Corp 転写基板、転写装置および転写方法
KR100579174B1 (ko) 2003-12-22 2006-05-11 삼성에스디아이 주식회사 레이저 전사용 도너 필름 및 그 필름을 사용하여 제조되는유기 전계 발광 소자
KR100625999B1 (ko) 2004-02-26 2006-09-20 삼성에스디아이 주식회사 도너 시트, 상기 도너 시트의 제조방법, 상기 도너 시트를이용한 박막 트랜지스터의 제조방법, 및 상기 도너 시트를이용한 평판 표시장치의 제조방법
JP2006086069A (ja) 2004-09-17 2006-03-30 Three M Innovative Properties Co 有機エレクトロルミネッセンス素子及びその製造方法
KR100793355B1 (ko) 2004-10-05 2008-01-11 삼성에스디아이 주식회사 도너 기판의 제조방법 및 유기전계발광표시장치의 제조방법
KR100667069B1 (ko) 2004-10-19 2007-01-10 삼성에스디아이 주식회사 도너 기판 및 그를 사용한 유기전계발광표시장치의 제조방법
KR20060109373A (ko) 2005-04-15 2006-10-20 삼성전기주식회사 유기전자소자 제조방법
JP2006309955A (ja) 2005-04-26 2006-11-09 Sony Corp 有機電界発光素子の製造方法および有機電界発光素子
TWI307612B (en) 2005-04-27 2009-03-11 Sony Corp Transfer method and transfer apparatus
JP2006309995A (ja) 2005-04-27 2006-11-09 Sony Corp 転写用基板および表示装置の製造方法ならびに表示装置
CN101277822B (zh) 2005-08-01 2012-01-25 日本先锋公司 有机膜热转印于其上的转印体的制造方法、有机膜热转印于其上的转印体
JP4449890B2 (ja) 2005-11-21 2010-04-14 ソニー株式会社 転写用基板および転写方法ならびに表示装置の製造方法
KR101109195B1 (ko) * 2005-12-19 2012-01-30 삼성전자주식회사 3차원 구조의 발광소자 및 그의 제조방법
KR20070073457A (ko) * 2006-01-05 2007-07-10 삼성에스디아이 주식회사 유기 전계 발광소자용 도너 필름의 제조 방법 및 이를이용한 유기 전계 발광소자의 제조 방법
JP5016831B2 (ja) * 2006-03-17 2012-09-05 キヤノン株式会社 酸化物半導体薄膜トランジスタを用いた発光素子及びこれを用いた画像表示装置
JP5013048B2 (ja) 2006-04-06 2012-08-29 ソニー株式会社 赤色有機発光素子およびこれを備えた表示装置
US7994021B2 (en) 2006-07-28 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI427702B (zh) 2006-07-28 2014-02-21 Semiconductor Energy Lab 顯示裝置的製造方法
TWI412079B (zh) 2006-07-28 2013-10-11 Semiconductor Energy Lab 製造顯示裝置的方法
KR101346246B1 (ko) 2006-08-24 2013-12-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치 제작방법
US8563431B2 (en) 2006-08-25 2013-10-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8148259B2 (en) 2006-08-30 2012-04-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2008059824A (ja) * 2006-08-30 2008-03-13 Fuji Electric Holdings Co Ltd アクティブマトリックス型有機elパネルおよびその製造方法
JP4245054B2 (ja) * 2007-01-26 2009-03-25 セイコーエプソン株式会社 画素内機能液の形態測定方法、画素内機能液の形態測定装置および液滴吐出装置、並びに電気光学装置の製造方法、電気光学装置および電子機器
KR101563237B1 (ko) 2007-06-01 2015-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조장치 및 발광장치 제작방법
KR20090028413A (ko) 2007-09-13 2009-03-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 제작방법 및 증착용 기판
KR20090041316A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 성막 방법 및 발광 장치의 제작 방법
US8153201B2 (en) 2007-10-23 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light-emitting device, and evaporation donor substrate
KR20090041314A (ko) 2007-10-23 2009-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판 및 발광장치의 제조방법
US8425974B2 (en) 2007-11-29 2013-04-23 Semiconductor Energy Laboratory Co., Ltd. Evaporation donor substrate and method for manufacturing light-emitting device
KR101689519B1 (ko) 2007-12-26 2016-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 증착용 기판, 증착용 기판의 제조방법, 및 발광장치의 제조방법
US8080811B2 (en) 2007-12-28 2011-12-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing evaporation donor substrate and light-emitting device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228649A (ja) * 2005-02-21 2006-08-31 Seiko Epson Corp 有機el装置の製造方法、蒸着ボート

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KR20090124948A (ko) 2009-12-03
JP2013145766A (ja) 2013-07-25
JP5265451B2 (ja) 2013-08-14
US20090297694A1 (en) 2009-12-03
JP2015092509A (ja) 2015-05-14
JP2010010127A (ja) 2010-01-14
US8802185B2 (en) 2014-08-12

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