JP5254018B2 - ポリ(シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジング - Google Patents
ポリ(シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジング Download PDFInfo
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- JP5254018B2 JP5254018B2 JP2008531234A JP2008531234A JP5254018B2 JP 5254018 B2 JP5254018 B2 JP 5254018B2 JP 2008531234 A JP2008531234 A JP 2008531234A JP 2008531234 A JP2008531234 A JP 2008531234A JP 5254018 B2 JP5254018 B2 JP 5254018B2
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- light emitting
- emitting diode
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- 239000000203 mixture Substances 0.000 title claims description 59
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 239000012963 UV stabilizer Substances 0.000 description 2
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 2
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- 150000001252 acrylic acid derivatives Chemical class 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 235000012211 aluminium silicate Nutrition 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
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- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- BAAAEEDPKUHLID-UHFFFAOYSA-N decyl(triethoxy)silane Chemical compound CCCCCCCCCC[Si](OCC)(OCC)OCC BAAAEEDPKUHLID-UHFFFAOYSA-N 0.000 description 2
- 125000001142 dicarboxylic acid group Chemical group 0.000 description 2
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 2
- YGUFXEJWPRRAEK-UHFFFAOYSA-N dodecyl(triethoxy)silane Chemical compound CCCCCCCCCCCC[Si](OCC)(OCC)OCC YGUFXEJWPRRAEK-UHFFFAOYSA-N 0.000 description 2
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- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 2
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 2
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- 239000004615 ingredient Substances 0.000 description 2
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- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 2
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229920006225 ethylene-methyl acrylate Polymers 0.000 description 1
- 239000005043 ethylene-methyl acrylate Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000010128 melt processing Methods 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SOGRSIKDVNNTNN-UHFFFAOYSA-N naphthalene;terephthalic acid Chemical compound C1=CC=CC2=CC=CC=C21.OC(=O)C1=CC=C(C(O)=O)C=C1 SOGRSIKDVNNTNN-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- NZIDBRBFGPQCRY-UHFFFAOYSA-N octyl 2-methylprop-2-enoate Chemical compound CCCCCCCCOC(=O)C(C)=C NZIDBRBFGPQCRY-UHFFFAOYSA-N 0.000 description 1
- GYDSPAVLTMAXHT-UHFFFAOYSA-N pentyl 2-methylprop-2-enoate Chemical compound CCCCCOC(=O)C(C)=C GYDSPAVLTMAXHT-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- BOQSSGDQNWEFSX-UHFFFAOYSA-N propan-2-yl 2-methylprop-2-enoate Chemical compound CC(C)OC(=O)C(C)=C BOQSSGDQNWEFSX-UHFFFAOYSA-N 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- BPILDHPJSYVNAF-UHFFFAOYSA-M sodium;diiodomethanesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C(I)I BPILDHPJSYVNAF-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 239000000326 ultraviolet stabilizing agent Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- PGNWIWKMXVDXHP-UHFFFAOYSA-L zinc;1,3-benzothiazole-2-thiolate Chemical compound [Zn+2].C1=CC=C2SC([S-])=NC2=C1.C1=CC=C2SC([S-])=NC2=C1 PGNWIWKMXVDXHP-UHFFFAOYSA-L 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/005—Stabilisers against oxidation, heat, light, ozone
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/04—Ingredients treated with organic substances
- C08K9/06—Ingredients treated with organic substances with silicon-containing compounds
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G63/00—Macromolecular compounds obtained by reactions forming a carboxylic ester link in the main chain of the macromolecule
- C08G63/02—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds
- C08G63/12—Polyesters derived from hydroxycarboxylic acids or from polycarboxylic acids and polyhydroxy compounds derived from polycarboxylic acids and polyhydroxy compounds
- C08G63/16—Dicarboxylic acids and dihydroxy compounds
- C08G63/18—Dicarboxylic acids and dihydroxy compounds the acids or hydroxy compounds containing carbocyclic rings
- C08G63/181—Acids containing aromatic rings
- C08G63/183—Terephthalic acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
- Y10T428/1352—Polymer or resin containing [i.e., natural or synthetic]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
- Y10T428/2991—Coated
- Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]
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Description
(e)約40〜約95重量%のポリ(1,4−シクロヘキサンジメタノールテレフタレート)と、
(f)約5〜約60重量%の二酸化チタンと、
(g)0〜約40重量%の少なくとも1種の無機強化剤または無機充填剤と、
(h)0〜約3重量%の少なくとも1種の酸化安定剤と
を含み、重量%が組成物の全重量を基準にしている、発光ダイオードアセンブリハウジングが本明細書で開示されている。
PCTはポリ(1,4−シクロヘキサンジメタノールテレフタレート)である。
ポリアミドは、テレフタル酸と、アジピン酸とヘキサメチレンジアミンから製造されたコポリアミドであり、約315℃の融点を有する。
強化剤Aは、テネシー州キングスポートのイーストマン・ケミカル社(Eastman Chemical Co.(Kingsport,TN))によって供給されるEMAC(登録商標)SP2260というエチレンメチルアクリレートコポリマーである。
強化剤Bはエチレン/n−ブチルアクリレート/グリシジルメタクリレートターポリマーである。
潤滑剤は、ノースカロライナ州シャーロットのクラリアント・コーポレーション(Clariant Corp.(Charlotte,NC))によって供給される「リコワックス(Licowax)」(登録商標)PED521である。
安定剤Aはエポキシクレゾールノボラック樹脂である。
安定剤Bはバーゼル(Basel)のチバ(Ciba)によって供給される「イルガフォス(Irgafos)」(登録商標)12である。
酸化防止剤Aはバーゼル(Basel)のチバ(Ciba)によって供給される「イルガノックス(Irganox)」(登録商標)1010である。
酸化防止剤Bはウェストバージニア州パーカーズバーグのG.E.スペシャルティ・ケミカルズ(G.E.Specialty Chemicals(Parkersburg,WV))によって供給される「ウルトラノックス(Ultranox)」(登録商標)626Aである。
酸化防止剤Cはバーゼル(Basel)のチバ(Ciba)によって供給される「イルガノックス(Irganox)」(登録商標)1098である。
ポリ(ブチレンテレフタレート)は本願特許出願人によって供給される「クラスチン(Crastin)」(登録商標)6136である。
二酸化チタンAはミッドランド州ハントバレーのミレニアム・インオーガニック・ケミカルズ(Millenium Inorganic Chemicals(Hunt Valley,MD))によって供給されるRCL4 TiO2である。
二酸化チタンBは本願特許出願人によって供給されるP−150である。
「ゼナイト(Zenite)」(登録商標)6000は本願特許出願人によって供給される液晶ポリエステルである。
ウォラストナイトは、ニューヨーク州ウィルスボロのナイコ・ミネラルズ(Nyco Minerals(Willsboro,NY))によって供給される「ナイド(Nayd)」M200である。
本発明は以下の実施の態様を含むものである。
1.ポリ(1,4−シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジングであって、前記組成物が、
(e)約40〜約95重量%のポリ(1,4−シクロヘキサンジメタノールテレフタレート)と、
(f)約5〜約60重量%の二酸化チタンと、
(g)0〜約40重量%の少なくとも1種の無機強化剤または無機充填剤と、
(h)0〜約3重量%の少なくとも1種の酸化安定剤と
を含み、重量%が前記組成物の全重量を基準にしていることを特徴とする発光ダイオードアセンブリハウジング。
2.前記ポリ(1,4−シクロヘキサンジメタノールテレフタレート)が前記組成物の全重量を基準にして約50〜約85重量%で存在することを特徴とする前記1に記載のハウジング。
3.前記二酸化チタンが前記組成物の全重量を基準にして約15〜約50重量%で存在することを特徴とする前記1に記載のハウジング。
4.前記二酸化チタンが前記組成物の全重量を基準にして約20〜約40重量%で存在することを特徴とする前記1に記載のハウジング。
5.前記二酸化チタンが無機被膜と有機被膜を有することを特徴とする前記1に記載のハウジング。
6.前記無機被膜が金属酸化物であることを特徴とする前記5に記載のハウジング。
7.前記有機被膜がカルボン酸、ポリオール、アルカノールアミンおよび/またはケイ素化合物の1つまたは複数であることを特徴とする前記5に記載のハウジング。
8.前記カルボン酸がアジピン酸、テレフタル酸、ラウリン酸、ミリスチン酸、パルミチン酸、ステアリン酸、ポリヒドロキシステアリン酸、オレイン酸、サリチル酸、リンゴ酸およびマレイン酸の1つまたは複数であることを特徴とする前記7に記載のハウジング。
9.前記ケイ素化合物がシリケート;オルガノアルコキシシラン、アミノシラン、エポキシシラン、メルカプトシランおよびポリヒドロキシシロキサンを含む有機シランおよび有機シロキサンの1つまたは複数であることを特徴とする前記7に記載のハウジング。
10.前記シランがヘキシルトリメトキシシラン、オクチルトリエトキシシラン、ノニルトリエトキシシラン、デシルトリエトキシシラン、ドデシルトリエトキシシラン、トリデシルトリエトキシシラン、テトラデシルトリエトキシシラン、ペンタデシルトリエトキシシラン、ヘキサデシルトリエトキシシラン、ヘプタデシルトリエトキシシラン、オクタデシルトリエトキシシラン、N−(2−アミノエチル)3−アミノプロピルメチルジメトキシシラン、N−(2−アミノエチル)3−アミノプロピルトリメトキシシラン、3−アミノプロピルトリエトキシシラン、3−グリシドキシプロピルトリメトキシシラン、3−グリシドキシプロピルメチルジメトキシシランおよび3−メルカプトプロピルトリメトキシシランから選択される1つまたは複数のシランであることを特徴とする前記9に記載のハウジング。
11.前記ポリ(1,4−シクロヘキサンジメタノールテレフタレート)において、ジオール反復単位の少なくとも90モル%が1,4−シクロヘキサンジメタノールから誘導され、前記ジカルボン酸反復単位の少なくとも90モル%がテレフタル酸から誘導されることを特徴とする前記1に記載のハウジング。
12.前記無機充填剤および/または無機強化剤がガラス繊維、ウォラストナイト、炭酸カルシウム、タルク、マイカおよびカオリンから選択される1つまたは複数であることを特徴とする前記1に記載のハウジング。
13.前記無機充填剤が前記組成物の全重量を基準にして約5〜約40重量%で存在することを特徴とする前記1に記載のハウジング。
14.前記酸化安定剤がホスフィット安定剤、ハイポホスフィット安定剤、ヒンダードフェノール安定剤、ヒンダードアミン安定剤、チオエステルおよび芳香族アミン安定剤から選択される1つまたは複数であることを特徴とする前記1に記載のハウジング。
15.前記酸化安定剤が前記組成物の全重量を基準にして約0.1〜約3重量%で存在することを特徴とする前記1に記載のハウジング。
16.前記ポリ(1,4−シクロヘキサンジメタノールテレフタレート)組成物が前記組成物の全重量を基準にして約0.1〜約3重量%の紫外線安定剤を更に含むことを特徴とする前記1に記載のハウジング。
17.前記1に記載のハウジングを含むことを特徴とする発光ダイオードアセンブリ。
Claims (3)
- ポリ(1,4−シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジングであって、前記組成物が、
40〜95重量%のポリ(1,4−シクロヘキサンジメタノールテレフタレート)と、
5〜60重量%の二酸化チタンと、
0〜40重量%の少なくとも1種の無機強化剤または無機充填剤と、
0〜3重量%の少なくとも1種の酸化安定剤と
0.5〜15重量%の、ポリ(1,4−シクロヘキサンジメタノールテレフタレート)と反応する官能基が結合しているポリマーと、
を含み、
前記ポリマーが、熱可塑性アクリルポリマー強化剤であり、
重量%が前記組成物の全重量を基準にしていることを特徴とする発光ダイオードアセンブリハウジング。 - ポリ(1,4−シクロヘキサンジメタノールテレフタレート)と反応する官能基が結合しているポリマーが、エチレンと、エチルアクリレートまたはn−ブチルアクリレートと、グリシジルメタクリレートとのコポリマーおよび/またはエチレン/メチルアクリレートコポリマーを含むことを特徴とする、請求項1に記載の発光ダイオードアセンブリハウジング。
- 請求項1または2に記載のハウジングを含むことを特徴とする発光ダイオードアセンブリ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US71687705P | 2005-09-14 | 2005-09-14 | |
US60/716,877 | 2005-09-14 | ||
PCT/US2006/035410 WO2007033129A2 (en) | 2005-09-14 | 2006-09-12 | Light-emitting diode assembly housing comprising poly(cyclohexanedimethanol terephthalate) compositions |
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JP2012067633A Division JP5592425B2 (ja) | 2005-09-14 | 2012-03-23 | ポリ(シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジング |
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JP2009507990A JP2009507990A (ja) | 2009-02-26 |
JP2009507990A5 JP2009507990A5 (ja) | 2009-11-05 |
JP5254018B2 true JP5254018B2 (ja) | 2013-08-07 |
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JP2008531234A Expired - Fee Related JP5254018B2 (ja) | 2005-09-14 | 2006-09-12 | ポリ(シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジング |
JP2012067633A Expired - Fee Related JP5592425B2 (ja) | 2005-09-14 | 2012-03-23 | ポリ(シクロヘキサンジメタノールテレフタレート)組成物を含む発光ダイオードアセンブリハウジング |
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EP (2) | EP2472603A1 (ja) |
JP (2) | JP5254018B2 (ja) |
WO (1) | WO2007033129A2 (ja) |
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-
2006
- 2006-09-07 US US11/517,110 patent/US8007885B2/en not_active Expired - Fee Related
- 2006-09-12 WO PCT/US2006/035410 patent/WO2007033129A2/en active Application Filing
- 2006-09-12 JP JP2008531234A patent/JP5254018B2/ja not_active Expired - Fee Related
- 2006-09-12 EP EP20120160247 patent/EP2472603A1/en not_active Withdrawn
- 2006-09-12 EP EP06803382A patent/EP1925038A2/en not_active Withdrawn
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- 2012-12-03 US US13/692,419 patent/US20130158184A1/en not_active Abandoned
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US20170084801A1 (en) | 2017-03-23 |
JP2009507990A (ja) | 2009-02-26 |
JP2012136710A (ja) | 2012-07-19 |
EP1925038A2 (en) | 2008-05-28 |
US20130158184A1 (en) | 2013-06-20 |
WO2007033129A3 (en) | 2007-06-14 |
JP5592425B2 (ja) | 2014-09-17 |
US8007885B2 (en) | 2011-08-30 |
US20110310622A1 (en) | 2011-12-22 |
US20070213458A1 (en) | 2007-09-13 |
EP2472603A1 (en) | 2012-07-04 |
WO2007033129A2 (en) | 2007-03-22 |
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