JP5252403B2 - ベース拡散エリアを小さくした太陽電池 - Google Patents
ベース拡散エリアを小さくした太陽電池 Download PDFInfo
- Publication number
- JP5252403B2 JP5252403B2 JP2009521742A JP2009521742A JP5252403B2 JP 5252403 B2 JP5252403 B2 JP 5252403B2 JP 2009521742 A JP2009521742 A JP 2009521742A JP 2009521742 A JP2009521742 A JP 2009521742A JP 5252403 B2 JP5252403 B2 JP 5252403B2
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- diffusion region
- base diffusion
- metal grid
- diffusion regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000009792 diffusion process Methods 0.000 title claims description 218
- 239000002800 charge carrier Substances 0.000 claims description 72
- 239000002184 metal Substances 0.000 claims description 71
- 239000012212 insulator Substances 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000002019 doping agent Substances 0.000 claims description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 62
- 235000012431 wafers Nutrition 0.000 description 30
- 239000011295 pitch Substances 0.000 description 16
- 230000006798 recombination Effects 0.000 description 16
- 238000005215 recombination Methods 0.000 description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/11—Photovoltaic cells having point contact potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
- H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/492,282 US8008575B2 (en) | 2006-07-24 | 2006-07-24 | Solar cell with reduced base diffusion area |
| US11/492,282 | 2006-07-24 | ||
| PCT/US2007/013318 WO2008013604A2 (en) | 2006-07-24 | 2007-06-06 | Solar cell with reduced base diffusion area |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013082280A Division JP5628960B2 (ja) | 2006-07-24 | 2013-04-10 | ベース拡散エリアを小さくした太陽電池 |
| JP2013082279A Division JP5628959B2 (ja) | 2006-07-24 | 2013-04-10 | ベース拡散エリアを小さくした太陽電池 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009545158A JP2009545158A (ja) | 2009-12-17 |
| JP2009545158A5 JP2009545158A5 (enExample) | 2010-07-08 |
| JP5252403B2 true JP5252403B2 (ja) | 2013-07-31 |
Family
ID=38970297
Family Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009521742A Active JP5252403B2 (ja) | 2006-07-24 | 2007-06-06 | ベース拡散エリアを小さくした太陽電池 |
| JP2013082280A Active JP5628960B2 (ja) | 2006-07-24 | 2013-04-10 | ベース拡散エリアを小さくした太陽電池 |
| JP2013082279A Active JP5628959B2 (ja) | 2006-07-24 | 2013-04-10 | ベース拡散エリアを小さくした太陽電池 |
| JP2014160454A Active JP6057090B2 (ja) | 2006-07-24 | 2014-08-06 | ベース拡散エリアを小さくした太陽電池 |
| JP2014204135A Active JP5999382B2 (ja) | 2006-07-24 | 2014-10-02 | ベース拡散エリアを小さくした太陽電池 |
| JP2016095692A Active JP6134036B2 (ja) | 2006-07-24 | 2016-05-11 | ベース拡散エリアを小さくした太陽電池 |
| JP2017083513A Active JP6401331B2 (ja) | 2006-07-24 | 2017-04-20 | ベース拡散エリアを小さくした太陽電池 |
| JP2018167275A Active JP6837036B2 (ja) | 2006-07-24 | 2018-09-06 | ベース拡散エリアを小さくした太陽電池および該製造方法 |
Family Applications After (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013082280A Active JP5628960B2 (ja) | 2006-07-24 | 2013-04-10 | ベース拡散エリアを小さくした太陽電池 |
| JP2013082279A Active JP5628959B2 (ja) | 2006-07-24 | 2013-04-10 | ベース拡散エリアを小さくした太陽電池 |
| JP2014160454A Active JP6057090B2 (ja) | 2006-07-24 | 2014-08-06 | ベース拡散エリアを小さくした太陽電池 |
| JP2014204135A Active JP5999382B2 (ja) | 2006-07-24 | 2014-10-02 | ベース拡散エリアを小さくした太陽電池 |
| JP2016095692A Active JP6134036B2 (ja) | 2006-07-24 | 2016-05-11 | ベース拡散エリアを小さくした太陽電池 |
| JP2017083513A Active JP6401331B2 (ja) | 2006-07-24 | 2017-04-20 | ベース拡散エリアを小さくした太陽電池 |
| JP2018167275A Active JP6837036B2 (ja) | 2006-07-24 | 2018-09-06 | ベース拡散エリアを小さくした太陽電池および該製造方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US8008575B2 (enExample) |
| EP (2) | EP2044632B1 (enExample) |
| JP (8) | JP5252403B2 (enExample) |
| KR (1) | KR101365852B1 (enExample) |
| CN (1) | CN101490851B (enExample) |
| AU (1) | AU2007277401B2 (enExample) |
| TW (1) | TWI349372B (enExample) |
| WO (1) | WO2008013604A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016146509A (ja) * | 2006-07-24 | 2016-08-12 | サンパワー コーポレイション | ベース拡散エリアを小さくした太陽電池 |
Families Citing this family (83)
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| EP2109147A1 (en) * | 2008-04-08 | 2009-10-14 | FOM Institute for Atomic and Molueculair Physics | Photovoltaic cell with surface plasmon resonance generating nano-structures |
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| US20100037943A1 (en) * | 2008-08-14 | 2010-02-18 | Sater Bernard L | Vertical multijunction cell with textured surface |
| US8106293B2 (en) * | 2008-08-14 | 2012-01-31 | Mh Solar Co., Ltd. | Photovoltaic cell with buffer zone |
| US20100037937A1 (en) * | 2008-08-15 | 2010-02-18 | Sater Bernard L | Photovoltaic cell with patterned contacts |
| US8293079B2 (en) * | 2008-08-28 | 2012-10-23 | Mh Solar Co., Ltd. | Electrolysis via vertical multi-junction photovoltaic cell |
| DE102008044910A1 (de) * | 2008-08-30 | 2010-03-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarzelle und Solarzellenmodul mit einseitiger Verschaltung |
| WO2010036807A1 (en) * | 2008-09-24 | 2010-04-01 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
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| JP2016146509A (ja) * | 2006-07-24 | 2016-08-12 | サンパワー コーポレイション | ベース拡散エリアを小さくした太陽電池 |
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